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178 条记录 (耗时 0.029 秒)

    Semiconductor memory device and manufacturing method for the same
    11.
    发明授权
    Semiconductor memory device and manufacturing method for the same 有权
    半导体存储器件及其制造方法

    公开(公告)号：US07304343B2

    公开(公告)日：2007-12-04

    申请号：US11084648

    申请日：2005-03-16

    申请人： Fujio Masuoka ,  Shinji Horii ,  Takuji Tanigami ,  Takashi Yokoyama

    发明人： Fujio Masuoka ,  Shinji Horii ,  Takuji Tanigami ,  Takashi Yokoyama

    IPC分类号： H01L29/76

    CPC分类号： H01L29/66825 ,  H01L27/115 ,  H01L27/11556 ,  H01L29/7887 ,  H01L29/7923

    摘要： The present invention provides a semiconductor memory device including: a semiconductor substrate of a first conductivity type; and a memory cell including: (i) a columnar semiconductor portion formed on the substrate, (ii) at least two charge-storage layers formed around a periphery of the columnar semiconductor portion and divided in a direction vertical to the semiconductor substrate, and (iii) a control gate that covers at least a portion of charge-storage layers, wherein the memory cell is capable of holding two-bit or more data.

    摘要翻译： 本发明提供一种半导体存储器件，包括：第一导电类型的半导体衬底; 以及存储单元，包括：（i）形成在所述基板上的柱状半导体部，（ii）形成在所述柱状半导体部的周围的并且沿与所述半导体基板垂直的方向分割的至少两个电荷存储层，和 iii）覆盖电荷存储层的至少一部分的控制栅极，其中所述存储器单元能够保持两位或更多数据。

    Semiconductor device, method for manufacturing the semiconductor device and portable electronic device provided with the semiconductor device
    15.
    发明授权
    Semiconductor device, method for manufacturing the semiconductor device and portable electronic device provided with the semiconductor device 有权
    半导体装置，半导体装置的制造方法以及具备该半导体装置的便携式电子装置

    公开(公告)号：US07388245B2

    公开(公告)日：2008-06-17

    申请号：US10592034

    申请日：2005-03-07

    申请人： Fujio Masuoka ,  Takashi Yokoyama ,  Takuji Tanigami ,  Shinji Horii

    发明人： Fujio Masuoka ,  Takashi Yokoyama ,  Takuji Tanigami ,  Shinji Horii

    IPC分类号： H01L29/423

    CPC分类号： H01L21/28273 ,  H01L21/823487 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11524 ,  H01L27/11568 ,  H01L29/66825 ,  H01L29/7881 ,  H01L29/792 ,  H01L29/7926

    摘要： A semiconductor device, which is characterized by that two or more island-shaped semiconductor layers including first and second island-shaped semiconductor layers are formed on the same substrate, at least the first island-shaped semiconductor layer has steps in its side wall so that sectional area of a cross section parallel to the surface of the substrate varies stepwise with respect to height in the vertical direction, the second island-shaped semiconductor layer is different from the first island-shaped semiconductor layer with respect to the presence/absence of a step in the side wall or the number of steps, and each of the first and second island-shaped semiconductor layers provides an element on a stair part of the side wall divided by the steps or on the side wall having no steps.

    摘要翻译： 一种半导体器件，其特征在于，在同一衬底上形成包括第一和第二岛状半导体层的两个或多个岛状半导体层，至少第一岛状半导体层在其侧壁上具有台阶，使得 与基板的表面平行的截面的截面积相对于垂直方向的高度逐步变化，第二岛状半导体层相对于第一岛状半导体层的存在/不存在而不同 第一和第二岛状半导体层中的每一个在侧壁分隔的侧壁的台阶部分或不具有台阶的侧壁上提供元件。

    Method for implanting ions into semiconductor substrate
    16.
    发明授权
    Method for implanting ions into semiconductor substrate 有权
    将离子注入半导体衬底的方法

    公开(公告)号：US07060598B2

    公开(公告)日：2006-06-13

    申请号：US10918515

    申请日：2004-08-12

    申请人： Fujio Masuoka ,  Shinji Horii ,  Takuji Tanigami ,  Takashi Yokoyama

    发明人： Fujio Masuoka ,  Shinji Horii ,  Takuji Tanigami ,  Takashi Yokoyama

    IPC分类号： H01L21/425

    CPC分类号： H01L21/26586

    摘要： An ion implantation method for implanting ions into a side wall of a protruded semiconductor layer from a semiconductor substrate, the method includes applying an electric field to accelerate the ions in one direction and applying a magnetic field parallel to a plane extending at a predetermined angle with respect to the one direction, thereby controlling a direction of the ion implantation to the side wall.

    摘要翻译： 一种用于从半导体衬底将离子注入到突出的半导体层的侧壁中的离子注入方法，所述方法包括：施加电场以加速沿一个方向的离子，并施加平行于以预定角度延伸的平面的磁场与 相对于该一个方向，从而控制离子注入到侧壁的方向。

    Semiconductor memory device and its manufacturing method
    18.
    发明申请
    Semiconductor memory device and its manufacturing method 审中-公开
    半导体存储器件及其制造方法

    公开(公告)号：US20050169043A1

    公开(公告)日：2005-08-04

    申请号：US11046269

    申请日：2005-01-27

    申请人： Takashi Yokoyama ,  Takuji Tanigami

    发明人： Takashi Yokoyama ,  Takuji Tanigami

    IPC分类号： G11C13/00 ,  H01L21/8229 ,  H01L27/10 ,  H01L27/24 ,  H01L45/00 ,  H01L49/02 ,  G11C11/00

    CPC分类号： H01L27/2445 ,  H01L27/2463 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/147 ,  H01L45/1683

    摘要： A semiconductor memory device comprises a memory array on a semiconductor substrate having a constitution such that a plurality of memory cells where one end of the variable resistive element is connected to either an emitter or a collector of a bipolar transistor are arranged in the row and the column directions in a matrix form, the other of the emitter or the collector of the bipolar transistor in each memory cell in the same column is connected to common source line extending in the column direction, a base of the bipolar transistor in each memory cell in the same row is connected to common word line extending in the row direction, the other end of the variable resistive element in each memory cell in the same column is connected to common bit line extending in the column direction.

    摘要翻译： 半导体存储器件包括半导体衬底上的存储器阵列，其具有这样的结构，使得可变电阻元件的一端连接到双极晶体管的发射极或集电极的多个存储单元布置在行中，并且 矩阵形式的列方向，同一列中的每个存储单元中的双极晶体管的发射极或集电极中的另一个连接到沿列方向延伸的公共源极线，每个存储单元中的双极晶体管的基极 相同的行连接到在行方向上延伸的公共字线，同一列中每个存储单元中的可变电阻元件的另一端连接到在列方向上延伸的公共位线。

    METHOD FOR EFFICIENTLY AMPLIFYING ABNORMAL PRION PROTEIN DERIVED FROM BSE
    20.
    发明申请
    METHOD FOR EFFICIENTLY AMPLIFYING ABNORMAL PRION PROTEIN DERIVED FROM BSE 审中-公开
    有效放大从疯牛病衍生的异常蛋白质的方法

    公开(公告)号：US20110124843A1

    公开(公告)日：2011-05-26

    申请号：US12994589

    申请日：2009-05-26

    申请人： Yuichi Murayama ,  Miyako Yoshioka ,  Kentaro Masujin ,  Hiroyuki Okada ,  Yoshifumi Iwamaru ,  Morikazu Imamura ,  Yuichi Matsuura ,  Takashi Yokoyama ,  Shirou Mohri

    发明人： Yuichi Murayama ,  Miyako Yoshioka ,  Kentaro Masujin ,  Hiroyuki Okada ,  Yoshifumi Iwamaru ,  Morikazu Imamura ,  Yuichi Matsuura ,  Takashi Yokoyama ,  Shirou Mohri

    IPC分类号： C07K1/02

    CPC分类号： C07K14/47 ,  G01N33/6896 ,  G01N2800/2828

    摘要： A method for efficiently amplifying abnormal prion protein (PrPSc) derived from bovine spongiform encephalopathy (BSE) is provided. Ultimately, the invention aims at eradicating the transmission of a prion disease by detecting a BSE-infected cow early and developing a method for inactivating prions and permitting early examination of prion inactivation. Provided is a method for efficiently amplifying PrPSc derived from BSE, wherein the method is based on a PMCA (protein misfolding cyclic amplification) method in which normal prion protein (PrPC) is used as a source and PrPSc is used as a seed, and PrPSc derived from BSE is amplified by stir-mixing, incubating, and sonicating both the PrPC and the PrPSc repeatedly, and wherein the method includes performing stir-mixing-incubation-sonication in the presence of a polysaccharide sulfate.

    摘要翻译： 提供了一种有效地扩增源自牛海绵状脑病（BSE）的异常朊病毒蛋白（PrPSc）的方法。 最终本发明旨在通过早期检测BSE感染的牛并且开发一种灭活朊病毒的方法并允许早期检测朊病毒失活来消除朊病毒病的传播。 提供了一种高效地扩增BSE衍生的PrPSc的方法，其中该方法基于使用正常朊病毒蛋白（PrPC）作为来源并使用PrPSc作为种子的PMCA（蛋白质错误折叠循环扩增）法，PrPSc 通过重复搅拌，孵育和超声处理PrPC和PrPSc来扩增来自BSE的片段，并且其中所述方法包括在多糖硫酸盐存在下进行搅拌 - 温育超声处理。