利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

81 条记录 (耗时 0.019 秒)

    Methods of forming capacitor constructions, and methods of forming constructions comprising dielectric materials
    11.
    发明授权
    Methods of forming capacitor constructions, and methods of forming constructions comprising dielectric materials 失效
    形成电容器结构的方法，以及形成包括电介质材料的构造的方法

    公开(公告)号：US06812110B1

    公开(公告)日：2004-11-02

    申请号：US10435103

    申请日：2003-05-09

    申请人： Cem Basceri ,  F. Daniel Gealy ,  Gurtej S Sandhu

    发明人： Cem Basceri ,  F. Daniel Gealy ,  Gurtej S Sandhu

    IPC分类号： H01L2120

    CPC分类号： H01L27/10855 ,  H01L27/10852 ,  H01L28/40 ,  H01L28/57

    摘要： The invention includes methods in which metal oxide dielectric materials are deposited over barrier layers. The barrier layers can comprise compositions of metal and one or more of carbon, boron and nitrogen, and the metal oxide of the dielectric material can comprise the same metal as the barrier layer. The dielectric material/barrier layer constructions can be incorporated into capacitors. The capacitors can be used in, for example, DRAM cells, which in turn can be used in electronic systems.

    摘要翻译： 本发明包括其中金属氧化物介电材料沉积在阻挡层上的方法。 阻挡层可以包括金属和碳，硼和氮中的一种或多种的组合物，并且介电材料的金属氧化物可以包含与阻挡层相同的金属。 电介质材料/阻挡层结构可以结合到电容器中。 电容器可以用在例如DRAM单元中，DRAM单元又可以用在电子系统中。

    Methods of forming capacitors
    13.
    发明授权
    Methods of forming capacitors 失效
    形成电容器的方法

    公开(公告)号：US06773981B1

    公开(公告)日：2004-08-10

    申请号：US09630850

    申请日：2000-08-02

    申请人： Husam N. Al-Shareef ,  Scott Jeffrey DeBoer ,  F. Daniel Gealy ,  Randhir P. S. Thakur

    发明人： Husam N. Al-Shareef ,  Scott Jeffrey DeBoer ,  F. Daniel Gealy ,  Randhir P. S. Thakur

    IPC分类号： H01L218242

    CPC分类号： H01L28/40 ,  H01L21/31604 ,  H01L27/10852

    摘要： Capacitors and methods of forming capacitors are disclosed. In one implementation, a capacitor comprises a capacitor dielectric layer comprising Ta2O5 formed over a first capacitor electrode. A second capacitor electrode is formed over the Ta2O5 capacitor dielectric layer. Preferably, at least a portion of the second capacitor electrode is formed over and in contact with the Ta2O5 in an oxygen containing environment at a temperature of at least about 175° C. Chemical vapor deposition is one example forming method. The preferred second capacitor electrode comprises a conductive metal oxide. A more preferred second capacitor electrode comprises a conductive silicon comprising layer, over a conductive titanium comprising layer, over a conductive metal oxide layer. A preferred first capacitor electrode comprises a conductively doped Si—Ge alloy. Preferably, a Si3N4 layer is formed over the first capacitor electrode. DRAM cells and methods of forming DRAM cells are disclosed.

    摘要翻译： 公开了形成电容器的电容器和方法。 在一个实施方式中，电容器包括在第一电容器电极上形成的包括Ta 2 O 5的电容器介电层。 在Ta 2 O 5电容器电介质层上形成第二电容器电极。 优选地，第二电容器电极的至少一部分在含氧环境中在至少约175℃的温度下形成在Ta 2 O 5上方并与Ta 2 O 5接触。化学气相沉积是一种示例性形成方法。 优选的第二电容器电极包括导电金属氧化物。 更优选的第二电容器电极包括在导电金属氧化物层上方的导电硅包含层，在导电的钛包覆层之上。 优选的第一电容器电极包括导电掺杂的Si-Ge合金。 优选地，在第一电容器电极上形成Si 3 N 4层。 公开DRAM单元和形成DRAM单元的方法。

    Atomic layer deposition methods
    14.
    发明授权
    Atomic layer deposition methods 有权
    原子层沉积法

    公开(公告)号：US06753271B2

    公开(公告)日：2004-06-22

    申请号：US10222282

    申请日：2002-08-15

    申请人： Demetrius Sarigiannis ,  Garo J. Derderian ,  Cem Basceri ,  Gurtej S. Sandhu ,  F. Daniel Gealy ,  Chris M. Carlson

    发明人： Demetrius Sarigiannis ,  Garo J. Derderian ,  Cem Basceri ,  Gurtej S. Sandhu ,  F. Daniel Gealy ,  Chris M. Carlson

    IPC分类号： H01L2144

    CPC分类号： H01L21/32051 ,  C23C16/4404 ,  C23C16/4405 ,  C23C16/45531 ,  C23C16/45534 ,  H01L21/02178 ,  H01L21/02186 ,  H01L21/0228 ,  H01L21/28562 ,  H01L21/3141 ,  H01L21/31616

    摘要： The invention includes an atomic layer deposition method of forming a layer of a deposited composition on a substrate. The method includes positioning a semiconductor substrate within an atomic layer deposition chamber. On the substrate, an intermediate composition monolayer is formed, followed by a desired deposited composition from reaction with the intermediate composition, collectively from flowing multiple different composition deposition precursors to the substrate within the deposition chamber. A material adheres to a chamber internal component surface from such sequentially forming. After such sequentially forming, a reactive gas flows to the chamber which is different in composition from the multiple different deposition precursors and which is effective to react with such adhering material. After the reactive gas flowing, such sequentially forming is repeated. Further implementations are contemplated.

    摘要翻译： 本发明包括在基板上形成沉积的组合物层的原子层沉积方法。 该方法包括将半导体衬底定位在原子层沉积室内。 在基材上形成中间组合物单层，随后是与中间体组合物反应所需的沉积组合物，统称为将多种不同的组合物沉积前体流到沉积室内的基底。 材料粘附到室内部件表面，从而依次形成。 在这种顺序形成之后，反应性气体流入到与多种不同的沉积前体不同的组合物中，并有效地与这种粘附材料反应。 在反应气体流动之后，重复这种顺序形成。 考虑进一步的实现。

    Method of forming a capacitor
    15.
    发明授权
    Method of forming a capacitor 失效
    形成电容器的方法

    公开(公告)号：US06689657B2

    公开(公告)日：2004-02-10

    申请号：US10159695

    申请日：2002-05-30

    申请人： F. Daniel Gealy ,  Thomas M. Graettinger

    发明人： F. Daniel Gealy ,  Thomas M. Graettinger

    IPC分类号： H01L218242

    CPC分类号： H01L28/90 ,  H01G4/33 ,  H01L23/5223 ,  H01L28/55 ,  H01L28/65 ,  H01L28/84 ,  H01L28/91 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A method of forming a capacitor. The method includes forming a substrate assembly having an interconnect recessed therein, and forming a first electrode on the interconnect. The first electrode includes a material selected from the group consisting of transition metals, conductive oxides, alloys thereof, and combinations thereof. The method further includes forming a second electrode, and forming a dielectric between the first and second electrodes.

    摘要翻译： 一种形成电容器的方法。 该方法包括形成具有凹入其中的互连的衬底组件，并且在互连上形成第一电极。 第一电极包括选自过渡金属，导电氧化物，其合金及其组合的材料。 该方法还包括形成第二电极，以及在第一和第二电极之间形成电介质。

    Capacitor with conductively doped Si-Ge alloy electrode
    16.
    发明授权
    Capacitor with conductively doped Si-Ge alloy electrode 失效
    具有导电掺杂的Si-Ge合金电极的电容器

    公开(公告)号：US06400552B2

    公开(公告)日：2002-06-04

    申请号：US09846520

    申请日：2001-04-30

    申请人： Husam N. Al-Shareef ,  Scott Jeffrey DeBoer ,  F. Daniel Gealy ,  Randhir P. S. Thakur

    发明人： Husam N. Al-Shareef ,  Scott Jeffrey DeBoer ,  F. Daniel Gealy ,  Randhir P. S. Thakur

    IPC分类号： H01G406

    CPC分类号： H01L28/40 ,  H01L21/31604 ,  H01L27/10852

    摘要： Capacitors and methods of forming capacitors are disclosed. In one implementation, a capacitor includes a capacitor dielectric layer including Ta2O5 formed over a first capacitor electrode. A second capacitor electrode is formed over the Ta2O5 capacitor dielectric layer. Preferably, at least a portion of the second capacitor electrode is formed over and in contact with the Ta2O5 in an oxygen containing environment at a temperature of at least about 175° C. Chemical vapor deposition is one example forming method. The preferred second capacitor electrode includes a conductive metal oxide. A more preferred second capacitor electrode includes a conductive silicon including layer, over a conductive titanium including layer, over a conductive metal oxide layer. A preferred first capacitor electrode includes a conductively doped Si—Ge alloy. Preferably, a Si3N4 layer is formed over the first capacitor electrode. DRAM cells and methods of forming DRAM cells are disclosed.

    摘要翻译： 公开了形成电容器的电容器和方法。 在一个实施方式中，电容器包括在第一电容器电极上形成的包括Ta 2 O 5的电容器介电层。 在Ta 2 O 5电容器电介质层上形成第二电容器电极。 优选地，第二电容器电极的至少一部分在含氧环境中在至少约175℃的温度下形成在Ta 2 O 5上方并与Ta 2 O 5接触。化学气相沉积是一种示例性形成方法。 优选的第二电容器电极包括导电金属氧化物。 更优选的第二电容器电极在导电金属氧化物层之上包括在导电的钛包覆层之上的包括导电硅的层。 优选的第一电容器电极包括导电掺杂的Si-Ge合金。 优选地，在第一电容器电极上形成Si 3 N 4层。 公开DRAM单元和形成DRAM单元的方法。

    Multilayer electrode for ferroelectric and high dielectric constant capacitors
    17.
    发明授权
    Multilayer electrode for ferroelectric and high dielectric constant capacitors 失效
    用于铁电和高介电常数电容器的多层电极

    公开(公告)号：US06297527B1

    公开(公告)日：2001-10-02

    申请号：US09310408

    申请日：1999-05-12

    申请人： Vishnu K. Agarwal ,  Garo J. Derderian ,  F. Daniel Gealy

    发明人： Vishnu K. Agarwal ,  Garo J. Derderian ,  F. Daniel Gealy

    IPC分类号： H01L31119

    CPC分类号： H01L27/11502 ,  H01G4/008 ,  H01G4/33 ,  H01L27/10852 ,  H01L27/11507 ,  H01L28/55 ,  H01L28/65 ,  H01L28/75 ,  H01L28/91

    摘要： A ferroelectric or high dielectric constant capacitor having a multilayer lower electrode comprising at least two layers—a platinum layer and a platinum-rhodium layer—for use in a random access memory (RAM) cell. The platinum layer of the lower electrode adjoins the capacitor dielectric, which is a ferroelectric or high dielectric constant dielectric such as BST, PZT, SBT or tantalum pentoxide. The platinum-rhodium layer serves as an oxidation barrier and may also act as an adhesion layer for preventing separation of the lower electrode from the substrate, thereby improving capacitor performance. The multilayer electrode may have titanium and/or titanium nitride layers under the platinum-rhodium layer for certain applications. The capacitor has an upper electrode which may be a conventional electrode or which may have a multilayer structure similar to that of the lower electrode. Processes for manufacturing the multilayer lower electrode and the capacitor are also disclosed.

    摘要翻译： 一种铁电或高介电常数电容器，其具有包括至少两层的多层下电极 - 铂层和铂 - 铑层，用于随机存取存储器（RAM）单元。 下电极的铂层与电容器电介质接触，电容器电介质是铁电或高介电常数电介质，如BST，PZT，SBT或五氧化二钽。 铂 - 铑层用作氧化屏障，并且还可以用作防止下电极与衬底分离的粘合层，从而提高电容器性能。 对于某些应用，多层电极可以在铂 - 铑层下方具有钛和/或氮化钛层。 电容器具有可以是常规电极的上电极，或者可以具有与下电极类似的多层结构。 还公开了用于制造多层下电极和电容器的工艺。

    Capacitors, methods of forming capacitors, and DRAM memory cells
    18.
    发明授权
    Capacitors, methods of forming capacitors, and DRAM memory cells 失效
    电容器，形成电容器的方法和DRAM存储器单元

    公开(公告)号：US06191443B1

    公开(公告)日：2001-02-20

    申请号：US09033063

    申请日：1998-02-28

    申请人： Husam N. Al-Shareef ,  Scott Jeffrey DeBoer ,  F. Daniel Gealy ,  Randhir P. S. Thakur

    发明人： Husam N. Al-Shareef ,  Scott Jeffrey DeBoer ,  F. Daniel Gealy ,  Randhir P. S. Thakur

    IPC分类号： H01L2972

    CPC分类号： H01L28/40 ,  H01L21/31604 ,  H01L27/10852

    摘要： Capacitors and methods of forming capacitors are disclosed. In one implementation, a capacitor comprises a capacitor dielectric layer comprising Ta2O5 formed over a first capacitor electrode. A second capacitor electrode is formed over the Ta2O5 capacitor dielectric layer. Preferably, at least a portion of the second capacitor electrode is formed over and in contact with the Ta2O5 in an oxygen containing environment at a temperature of at least about 175° C. Chemical vapor deposition is one example forming method. The preferred second capacitor electrode comprises a conductive metal oxide. A more preferred second capacitor electrode comprises a conductive silicon comprising layer, over a conductive titanium comprising layer, over a conductive metal oxide layer. A preferred first capacitor electrode comprises a conductively doped Si-Ge alloy. Preferably, a Si3N4 layer is formed over the first capacitor electrode. DRAM cells and methods of forming DRAM cells are disclosed.

    摘要翻译： 公开了形成电容器的电容器和方法。 在一个实施方式中，电容器包括在第一电容器电极上形成的包括Ta 2 O 5的电容器介电层。 在Ta 2 O 5电容器电介质层上形成第二电容器电极。 优选地，第二电容器电极的至少一部分在含氧环境中在至少约175℃的温度下形成在Ta 2 O 5上方并与Ta 2 O 5接触。化学气相沉积是一种示例性形成方法。 优选的第二电容器电极包括导电金属氧化物。 更优选的第二电容器电极包括在导电金属氧化物层上方的导电硅包含层，在导电的钛包覆层之上。 优选的第一电容器电极包括导电掺杂的Si-Ge合金。 优选地，在第一电容器电极上形成Si 3 N 4层。 公开DRAM单元和形成DRAM单元的方法。