公开(公告)号：US20060234502A1

公开(公告)日：2006-10-19

申请号：US11105096

申请日：2005-04-13

申请人： Vishwanath Bhat ,  F. Gealy

发明人： Vishwanath Bhat ,  F. Gealy

IPC分类号： H01L21/44

CPC分类号： H01L21/28556 ,  H01L21/28088 ,  H01L27/10852 ,  H01L28/40 ,  H01L29/4966 ,  H01L29/78

摘要： The present invention is generally directed to a method of forming titanium nitride layers. In one illustrative embodiment, the method includes forming a layer of titanium nitride by performing a deposition process, performing an anneal process on the layer of titanium nitride in a chlorine scavenging ambient to define an annealed layer of titanium nitride, and, prior to exposing the annealed layer of titanium nitride to an oxygen-containing ambient, forming a cap layer on the annealed layer of titanium nitride. In another illustrative embodiment, the method includes performing a chemical vapor deposition process in a first process chamber to form a layer of titanium nitride above a semiconducting substrate, transferring the substrate to a second process chamber, performing an anneal process on the layer of titanium nitride in a chlorine scavenging ambient within the second process chamber to produce an anneal layer of titanium nitride, and, prior to exposing the annealed layer of titanium nitride to an oxygen-containing ambient, forming a cap layer on the annealed layer of titanium nitride in the second process chamber.

摘要翻译： 本发明一般涉及形成氮化钛层的方法。 在一个说明性实施例中，该方法包括通过执行沉积工艺形成氮化钛层，在氯清除环境中对氮化钛层进行退火处理以限定氮化钛的退火层，并且在暴露 将退火的氮化钛层与含氧环境反应，在氮化钛的退火层上形成覆盖层。 在另一说明性实施例中，该方法包括在第一处理室中进行化学气相沉积工艺以在半导体衬底上形成氮化钛层，将衬底转移到第二工艺室，对氮化钛层进行退火处理 在第二处理室内的氯清除环境中，以产生氮化钛的退火层，并且在将退火的氮化钛层暴露于含氧环境之前，在氮化钛的退火层上形成覆盖层 第二处理室。

公开(公告)号：US20060046440A1

公开(公告)日：2006-03-02

申请号：US10932151

申请日：2004-09-01

申请人： Nirmal Ramaswamy ,  Gurtej Sandhu ,  Chris Carlson ,  F. Gealy

发明人： Nirmal Ramaswamy ,  Gurtej Sandhu ,  Chris Carlson ,  F. Gealy

IPC分类号： H01L21/20

CPC分类号： H01L29/66787 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02491 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02642 ,  H01L21/02658

摘要： The invention includes methods of forming layers comprising epitaxial silicon. In one implementation, an opening is formed within a first material received over a monocrystalline material. Opposing sidewalls of the opening are lined with a second material, with monocrystalline material being exposed at a base of the second material-lined opening. A silicon-comprising layer is epitaxially grown from the exposed monocrystalline material within the second material-lined opening. At least a portion of the second material lining is in situ removed. Other aspects and implementations are contemplated.

公开(公告)号：US20050147751A1

公开(公告)日：2005-07-07

申请号：US11075017

申请日：2005-03-08

申请人： Demetrius Sarigiannis ,  Garo Derderian ,  Cem Basceri ,  Gurtej Sandhu ,  F. Gealy ,  Chris Carlson

发明人： Demetrius Sarigiannis ,  Garo Derderian ,  Cem Basceri ,  Gurtej Sandhu ,  F. Gealy ,  Chris Carlson

IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C14/00 ,  C23C16/00

CPC分类号： C23C16/45519 ,  C23C16/4401 ,  C23C16/455

摘要： A deposition method includes positioning a substrate within a deposition chamber defined at least in part by chamber walls. At least one of the chamber walls comprises a chamber surface having a plurality of purge gas inlets to the chamber therein. A process gas is provided over the substrate effective to deposit a layer onto the substrate. During such providing, a material adheres to the chamber surface. Reactive purge gas is emitted to the deposition chamber from the purge gas inlets effective to form a reactive gas curtain over the chamber surface and away from the substrate, with such reactive gas reacting with such adhering material. Further implementations are contemplated.

公开(公告)号：US20060264010A1

公开(公告)日：2006-11-23

申请号：US11497689

申请日：2006-07-31

申请人： Nirmal Ramaswamy ,  Gurtej Sandhu ,  Chris Carlson ,  F. Gealy

发明人： Nirmal Ramaswamy ,  Gurtej Sandhu ,  Chris Carlson ,  F. Gealy

IPC分类号： H01L21/20

CPC分类号： H01L29/66787 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02491 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02642 ,  H01L21/02658

摘要： The invention includes methods of forming layers comprising epitaxial silicon. In one implementation, an opening is formed within a first material received over a monocrystalline material. Opposing sidewalls of the opening are lined with a second material, with monocrystalline material being exposed at a base of the second material-lined opening. A silicon-comprising layer is epitaxially grown from the exposed monocrystalline material within the second material-lined opening. At least a portion of the second material lining is in situ removed. Other aspects and implementations are contemplated.

摘要翻译： 本发明包括形成包含外延硅的层的方法。 在一个实施方案中，在通过单晶材料接收的第一材料内形成开口。 开口的相对侧壁衬有第二材料，其中单晶材料暴露在第二材料衬里开口的基部处。 在第二材料衬里的开口内从暴露的单晶材料外延生长含硅层。 第二材料衬里的至少一部分被原位去除。 考虑了其他方面和实现。

公开(公告)号：US20060249778A1

公开(公告)日：2006-11-09

申请号：US11485592

申请日：2006-07-11

申请人： Cem Basceri ,  F. Gealy ,  Gurtej Sandhu

发明人： Cem Basceri ,  F. Gealy ,  Gurtej Sandhu

IPC分类号： H01L29/94 ,  H01L29/00

CPC分类号： H01G4/33 ,  H01G4/1209 ,  H01G4/1272 ,  H01L21/31645 ,  H01L27/10852 ,  H01L28/60 ,  H01L28/65 ,  H01L28/90 ,  H01L28/91 ,  H01L29/7833

摘要： The invention includes methods of forming hafnium-containing materials, such as, for example, hafnium oxide. In one aspect, a semiconductor substrate is provided, and first reaction conditions are utilized to form hafnium-containing seed material in a desired crystalline phase and orientation over the substrate. Subsequently, second reaction conditions are utilized to grow second hafnium-containing material over the seed material. The second hafnium-containing material is in a crystalline phase and/or orientation different from the crystalline phase and orientation of the hafnium-containing seed material. The second hafnium-containing material can be, for example, in an amorphous phase. The seed material is then utilized to induce a desired crystalline phase and orientation in the second hafnium-containing material. The invention also includes capacitor constructions utilizing hafnium-containing materials, and circuit assemblies comprising the capacitor constructions.

摘要翻译： 本发明包括形成含铪材料的方法，例如氧化铪。 在一个方面，提供了半导体衬底，并且利用第一反应条件来形成在衬底上所需的结晶相和取向的含铪种子材料。 随后，利用第二反应条件在种子材料上生长第二含铪材料。 第二含铪材料处于与含铪种子材料的结晶相和取向不同的结晶相和/或取向。 第二含铪材料可以是例如非晶相。 然后将种子材料用于在第二含铪材料中诱导所需的结晶相和取向。 本发明还包括使用含铪材料的电容器结构和包括电容器结构的电路组件。

公开(公告)号：US20060145294A1

公开(公告)日：2006-07-06

申请号：US11364383

申请日：2006-02-27

申请人： Vishwanath Bhat ,  Chris Carlson ,  F. Gealy

发明人： Vishwanath Bhat ,  Chris Carlson ,  F. Gealy

IPC分类号： H01L29/00

CPC分类号： H01G4/085 ,  H01G4/1272 ,  H01G4/33 ,  H01L21/02178 ,  H01L21/0228 ,  H01L21/31616 ,  H01L21/31683 ,  H01L28/40

摘要： A method of forming a capacitor includes forming a conductive metal first electrode layer over a substrate, with the conductive metal being oxidizable to a higher degree at and above an oxidation temperature as compared to any degree of oxidation below the oxidation temperature. At least one oxygen containing vapor precursor is fed to the conductive metal first electrode layer below the oxidation temperature under conditions effective to form a first portion oxide material of a capacitor dielectric region over the conductive metal first electrode layer. At least one vapor precursor is fed over the first portion at a temperature above the oxidation temperature effective to form a second portion oxide material of the capacitor dielectric region over the first portion. The oxide material of the first portion and the oxide material of the second portion are common in chemical composition. A conductive second electrode layer is formed over the second portion oxide material of the capacitor dielectric region.

摘要翻译： 形成电容器的方法包括在衬底上形成导电金属第一电极层，与在氧化温度以下的任何氧化度相比，导电金属可以在氧化温度以上高于可氧化的程度。 在导电金属第一电极层上有效形成电容器电介质区域的第一部分氧化物材料的条件下，在氧化温度以下将至少一种含氧气体前体供给至导电金属第一电极层。 至少一种蒸气前体在高于氧化温度的温度下在第一部分上进料，有效地在第一部分上形成电容器电介质区域的第二部分氧化物材料。 第一部分的氧化物材料和第二部分的氧化物材料在化学组成中是常见的。 在电容器电介质区域的第二部分氧化物材料上形成导电的第二电极层。

公开(公告)号：US20060035473A1

公开(公告)日：2006-02-16

申请号：US11251973

申请日：2005-10-17

申请人： F. Gealy ,  Dave Chapek ,  Scott DeBoer ,  Husam Al-Shareef ,  Randhir Thakur

发明人： F. Gealy ,  Dave Chapek ,  Scott DeBoer ,  Husam Al-Shareef ,  Randhir Thakur

IPC分类号： H01L21/31

CPC分类号： H01L21/28202 ,  C30B33/005 ,  H01L21/02183 ,  H01L21/02197 ,  H01L21/02271 ,  H01L21/31662 ,  H01L29/518 ,  Y10S438/903

摘要： A method and apparatus for preventing N2O from becoming super critical during a high pressure oxidation stage within a high pressure oxidation furnace are disclosed. The method and apparatus utilize a catalyst to catalytically disassociate N2O as it enters the high pressure oxidation furnace. This catalyst is used in an environment of between five atmospheres and 25 atmospheres N2O and a temperature range of 600° to 750° C., which are the conditions that lead to the N2O going super critical. By preventing the N2O from becoming super critical, the reaction is controlled that prevents both temperature and pressure spikes. The catalyst can be selected from the group of noble transition metals and their oxides. This group can comprise palladium, platinum, iridium, rhodium, nickel, silver, and gold.

摘要翻译： 公开了一种在高压氧化炉内的高压氧化阶段防止N 2 O变得超临界的方法和装置。 该方法和装置利用催化剂在进入高压氧化炉时催化分解N 2 O 2。 该催化剂在五个大气压和25个大气压N 2 O 2的温度范围和600℃至750℃的温度范围内使用，这是导致N 2 O超级关键。 通过防止N 2 O 2变得超临界，控制反应以防止温度和压力尖峰。 催化剂可以选自贵金属过渡金属及其氧化物。 该组可以包括钯，铂，铱，铑，镍，银和金。

公开(公告)号：US20050227433A1

公开(公告)日：2005-10-13

申请号：US11123380

申请日：2005-05-05

申请人： Vishwanath Bhat ,  F. Gealy ,  Cancheepuram Srividya

发明人： Vishwanath Bhat ,  F. Gealy ,  Cancheepuram Srividya

IPC分类号： H01L21/00 ,  H01L21/02 ,  H01L21/316 ,  H01L21/8242

CPC分类号： H01L28/56 ,  H01L21/02175 ,  H01L21/02178 ,  H01L21/022 ,  H01L21/31616 ,  H01L21/31637 ,  H01L21/31641 ,  H01L21/31645 ,  H01L28/40

摘要： The invention includes constructions having two dielectric layers over a conductively-doped semiconductive material. One of the dielectric layers contains aluminum oxide, and the other contains a metal oxide other than aluminum oxide (such metal oxide can be, for example, one or more of hafnium oxide, tantalum oxide, titanium oxide and zirconium oxide). The layer containing aluminum oxide is between the layer containing metal oxide and the conductively-doped semiconductive material. The invention includes capacitor devices having one electrode containing conductively-doped silicon and another electrode containing one or more metals and/or metal compounds. At least two dielectric layers are formed between the two capacitor electrodes, with one of the dielectric layers containing aluminum oxide and the other containing a metal oxide other than aluminum oxide. The invention also includes methods of forming capacitor constructions.

摘要翻译： 本发明包括在导电掺杂的半导体材料上具有两个电介质层的结构。 电介质层中的一层包含氧化铝，另外含有氧化铝以外的金属氧化物（例如，氧化铪，氧化钽，氧化钛，氧化锆等中的一种或多种）。 含有氧化铝的层位于含金属氧化物层和导电掺杂半导体材料之间。 本发明包括具有一个含有导电掺杂硅的电极和含有一种或多种金属和/或金属化合物的另一电极的电容器器件。 在两个电容器电极之间形成至少两个电介质层，其中一个电介质层包含氧化铝，另一个包含除氧化铝之外的金属氧化物。 本发明还包括形成电容器结构的方法。

公开(公告)号：US20050028936A1

公开(公告)日：2005-02-10

申请号：US10933890

申请日：2004-09-02

申请人： F. Gealy ,  Dave Chapek ,  Scott DeBoer ,  Husam Al-shareef ,  Randhir Thakur

发明人： F. Gealy ,  Dave Chapek ,  Scott DeBoer ,  Husam Al-shareef ,  Randhir Thakur

IPC分类号： C30B33/00 ,  H01L21/316 ,  C23F1/00

CPC分类号： H01L21/28202 ,  C30B33/005 ,  H01L21/02183 ,  H01L21/02197 ,  H01L21/02271 ,  H01L21/31662 ,  H01L29/518 ,  Y10S438/903

摘要： A method and apparatus for preventing N2O from becoming super critical during a high pressure oxidation stage within a high pressure oxidation furnace are disclosed. The method and apparatus utilize a catalyst to catalytically disassociate N2O as it enters the high pressure oxidation furnace. This catalyst is used in an environment of between five (5) atmospheres to twenty-five (25) atmospheres N20 and a temperature range of 600° to 750° C., which are the conditions that lead to the N2O going super critical. By preventing the N2O from becoming super critical, the reaction is controlled that prevents both temperature and pressure spikes. The catalyst can be selected from the group of noble transition metals and their oxides. This group can comprise palladium, platinum, iridium, rhodium, nickel, silver, and gold.

摘要翻译： 公开了一种在高压氧化炉内高压氧化阶段防止N2O变得超临界的方法和装置。 该方法和装置利用催化剂在进入高压氧化炉时催化分解N2O。 该催化剂用于在五（5）大气压至二十五（25）个大气压二氧化氮和600℃至750℃的温度范围的环境中，这是导致N2O变得超临界的条件。 通过防止N2O变得超临界，可以控制反应，防止温度和压力尖峰。 催化剂可以选自贵金属过渡金属及其氧化物。 该组可以包括钯，铂，铱，铑，镍，银和金。

公开(公告)号：US20070166962A1

公开(公告)日：2007-07-19

申请号：US11712151

申请日：2007-02-28

申请人： Nirmal Ramaswamy ,  Gurtej Sandhu ,  Chris Carlson ,  F. Gealy

发明人： Nirmal Ramaswamy ,  Gurtej Sandhu ,  Chris Carlson ,  F. Gealy

IPC分类号： H01L21/20

CPC分类号： H01L29/66787 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02491 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02642 ,  H01L21/02658

摘要： The invention includes methods of forming layers comprising epitaxial silicon. In one implementation, an opening is formed within a first material received over a monocrystalline material. Opposing sidewalls of the opening are lined with a second material, with monocrystalline material being exposed at a base of the second material-lined opening. A silicon-comprising layer is epitaxially grown from the exposed monocrystalline material within the second material-lined opening. At least a portion of the second material lining is in situ removed. Other aspects and implementations are contemplated.

摘要翻译： 本发明包括形成包含外延硅的层的方法。 在一个实施方案中，在通过单晶材料接收的第一材料内形成开口。 开口的相对侧壁衬有第二材料，其中单晶材料暴露在第二材料衬里开口的基部处。 在第二材料衬里的开口内从暴露的单晶材料外延生长含硅层。 第二材料衬里的至少一部分被原位去除。 考虑了其他方面和实现。