公开(公告)号：US20240339306A1

公开(公告)日：2024-10-10

申请号：US18746251

申请日：2024-06-18

Applicant: Tokyo Electron Limited

Inventor： Atsushi SAWACHI ,  Jun HIROSE ,  Takuya NISHIJIMA ,  Ichiro SONE ,  Suguru SATO

IPC: H01J37/32

CPC classification number: H01J37/32733 ,  H01J37/3244 ,  H01J37/32899

Abstract: A substrate processing apparatus is provided. The substrate processing apparatus comprise: a first chamber including a sidewall providing an opening, the first chamber further including a movable part movable upward and downward within the first chamber; a substrate support disposed within the first chamber; a second chamber disposed within the first chamber and defining, together with the substrate support, a processing space in which a substrate mounted on the substrate support is processed, the second chamber being separable from the first chamber and transportable between an inner space of the first chamber and the outside of the first chamber via the opening; a clamp releasably fixing the second chamber to the movable part extending above the second chamber; a release mechanism configured to release the fixing of the second chamber by the clamp; and a lift mechanism configured to move the movable part upward and downward.

公开(公告)号：US20240242976A1

公开(公告)日：2024-07-18

申请号：US18279712

申请日：2022-03-04

Applicant: Tokyo Electron Limited ,  FUJIKIN INCORPORATED

Inventor： Jun HIROSE ,  Atsushi SAWACHI ,  Takahiro MATSUDA ,  Kazunari WATANABE ,  Kohei SHIGYOU ,  Taiki HOSHIKO

IPC: H01L21/67

CPC classification number: H01L21/67017

Abstract: A gas supply device capable of saving space and supplying a mixed gas having components with stable concentration to a processing chamber in a short time includes: a plurality of fluid control units each including a flow path through which gas flows, and fluid control devices provided in the middle of the flow path; a merging flow path including a plurality of connecting portions fluidly connected to the plurality of fluid control units and a single gas outlet portion which derives the gas introduced through the plurality of connecting portions; wherein a plurality of connecting portions is arranged symmetrically with respect to the gas outlet portion in the flow path direction of the merging flow path, and two or more fluid control units are fluidly connected to each of the plurality of connecting portions.

公开(公告)号：US20240212987A1

公开(公告)日：2024-06-27

申请号：US18433862

申请日：2024-02-06

Applicant: Tokyo Electron Limited

Inventor： Atsushi SAWACHI ,  Kota ISHIHARADA ,  Hideaki YAKUSHIJI ,  Yoshiyasu SATO ,  Shinya MORIKITA ,  Shota YOSHIMURA ,  Toshihiro TSURUTA ,  Kazuaki TAKAAI

IPC: H01J37/32 ,  H01L21/67

CPC classification number: H01J37/32449 ,  H01J37/32834 ,  H01L21/67017 ,  H01J2237/334

Abstract: A gas supply system includes: gas supply flow paths for independently supplying gas to a processing chamber; a flow rate controller arranged in each gas supply flow path; a primary-side valve arranged on an upstream side of the flow rate controller; a primary-side gas exhaust flow path branched between the primary-side valve and the flow rate controller; a primary-side exhaust valve arranged in the primary-side gas exhaust flow path; a secondary-side valve arranged on a downstream side of the flow rate controller; a secondary-side gas exhaust flow path branched between the secondary-side valve and the flow rate controller; and a secondary-side exhaust valve arranged in the secondary-side gas exhaust flow path. The flow rate controller includes: a control valve connected to the primary-side valve and the secondary-side valve; and a control-side orifice arranged between the control valve and the secondary-side valve.

公开(公告)号：US20210407768A1

公开(公告)日：2021-12-30

申请号：US17356997

申请日：2021-06-24

Applicant: TOKYO ELECTRON LIMITED

Inventor： Atsushi SAWACHI ,  Jun HIROSE ,  Takuya NISHIJIMA ,  Ichiro SONE ,  Suguru SATO

IPC: H01J37/32

Abstract: A substrate processing apparatus includes a first chamber having an inner space and an opening, a substrate support disposed in the inner space of the first chamber, an actuator configured to move the substrate support between a first position and a second position, a second chamber that is disposed in the inner space of the first chamber and defines a substrate processing space together with the substrate support when the substrate support is located at the first position, and at least one fixing mechanism configured to detachably fix the second chamber to the first chamber in the inner space of the first chamber. The second chamber is transferred between the inner space of the first chamber and an outside of the first chamber through the opening when the substrate support is located at the second position.

公开(公告)号：US20180012735A1

公开(公告)日：2018-01-11

申请号：US15645521

申请日：2017-07-10

Applicant: TOKYO ELECTRON LIMITED

Inventor： Atsushi SAWACHI ,  Norihiko AMIKURA ,  Kouji NISHINO ,  Yohei SAWADA ,  Yoshiharu KISHIDA

IPC: H01J37/32 ,  F16K7/12 ,  F16K31/00 ,  G05D7/06 ,  H01L21/67 ,  H01L21/3065

Abstract: A gas supply system includes: a first flow channel connecting a first gas source and a chamber; a second flow channel connecting a second gas source and the first flow channel; a control valve, provided in the second flow channel, configured to control a flow rate of the second gas; an orifice provided downstream of the control valve and at a terminus of the second flow channel; a switching valve, provided at a connection point between the first flow channel and the terminus of the second flow channel, configured to control a supply timing of the second gas; an exhaust mechanism, connected to a flow channel between the control valve and the orifice in the second flow channel, configured to exhaust the second gas; and a controller configured to bring the control valve, the switching valve and the exhaust mechanism into operation.

公开(公告)号：US20150206713A1

公开(公告)日：2015-07-23

申请号：US14600224

申请日：2015-01-20

Applicant: TOKYO ELECTRON LIMITED

Inventor： Norihiko AMIKURA ,  Norikazu SASAKI ,  Atsushi SAWACHI

IPC: H01J37/32 ,  H01L21/67

CPC classification number: H01J37/3244 ,  H01J37/32449 ,  H01L21/31116

Abstract: Processing gases respectively supplied from multiple gas supply lines into a processing vessel can be switched at a high speed in a uniform manner. A plasma processing apparatus includes the processing vessel configured to perform therein a plasma process to a target substrate; and a gas inlet member including first gas discharge holes and second gas discharge holes which are alternately arranged to be adjacent to each other and respectively communicate with a first gas supply line and a second gas supply line, which are switchable. Further, the first gas discharge holes and the second gas discharge holes independently and respectively introduce a first processing gas and a second processing gas, which are respectively supplied from the first gas supply line and the second gas supply line and used in the plasma process, into the processing vessel.

Abstract translation: 分别从多个气体供给管路供给到处理容器中的处理气体可以以均匀的方式高速地切换。 等离子体处理装置包括：处理容器，被配置为在目标衬底中执行等离子体处理; 以及包括第一气体排出孔和第二气体排出孔的气体入口构件，所述第一气体排出孔和第二气体排出孔彼此相邻配置并分别与可切换的第一气体供给管线和第二气体供给管路连通。 此外，第一气体排出孔和第二气体排出孔独立地分别引入从第一气体供给管线和第二气体供给管线分别供给并用于等离子体处理的第一处理气体和第二处理气体， 进入处理容器。

公开(公告)号：US20240290591A1

公开(公告)日：2024-08-29

申请号：US18655368

申请日：2024-05-06

Applicant: Tokyo Electron Limited

Inventor： Atsushi SAWACHI ,  Ichiro SONE ,  Takuya NISHIJIMA ,  Suguru SATO

IPC: H01J37/32 ,  G01J3/443

CPC classification number: H01J37/32972 ,  G01J3/443 ,  H01J37/32733

Abstract: A measuring device for a vacuum processing apparatus including a processing chamber having a first gate for loading and unloading a substrate and a second gate different from the first gate is provided. The measuring device includes a case having an opening that is sized to correspond to the second gate of the processing chamber and is airtightly attachable to the second gate, a decompressing mechanism configured to reduce a pressure in the case, and a measuring mechanism accommodated in the case and configured to measure a state in the processing chamber through the opening in a state where the pressure in the case is reduced by the decompressing mechanism.

公开(公告)号：US20220148890A1

公开(公告)日：2022-05-12

申请号：US17522660

申请日：2021-11-09

Applicant: TOKYO ELECTRON LIMITED

Inventor： Atsushi SAWACHI ,  Kosuke OGASAWARA

IPC: H01L21/67

Abstract: A processing apparatus which processes a substrate is disclosed. The processing apparatus comprises: a plurality of processing chambers which process the substrate in an atmosphere of a desired processing gases; a plurality of tank units provided for each of the plurality of processing chambers, the plurality of tank units including a plurality of tanks configured for temporarily storing the processing gases; and one or more gas boxes supplying the processing gases to the processing chambers via the tank units. The substrate processing apparatus allows the number of gas boxes to be reduced.

公开(公告)号：US20220115213A1

公开(公告)日：2022-04-14

申请号：US17560242

申请日：2021-12-22

Applicant: TOKYO ELECTRON LIMITED

Inventor： Atsushi SAWACHI

IPC: H01J37/32 ,  C23C16/455 ,  H01L21/67

Abstract: When a gas supplied to a gas injection unit is switched from a first processing gas to a second processing gas, a controller of a gas supply system performs control to open a first supply on/off valve connected to the gas injection unit and provided in a first gas supply line for supplying the first processing gas and a second exhaust on/off valve provided in a first gas exhaust line branched from the first gas supply line, close a second supply on/off valve connected to the gas injection unit and provided in a second gas supply line for supplying the second processing gas and a first exhaust on/off valve provided in a second gas exhaust line branched from the second gas supply line; and then open the second supply on/off valve and the first exhaust on/off valve and close the first supply on/off valve and the second exhaust on/off valve.

公开(公告)号：US20210134564A1

公开(公告)日：2021-05-06

申请号：US17079947

申请日：2020-10-26

Applicant: TOKYO ELECTRON LIMITED

Inventor： Atsushi SAWACHI ,  Norihiko AMIKURA

IPC: H01J37/32

Abstract: A gas supply system includes first and second gas supply lines, first and second valves, and a controller. The first gas supply line is connected between a process gas source and a substrate processing chamber and has an intermediate node. The second gas supply line is connected between a purge gas source and the intermediate node. The first valve is disposed upstream of the intermediate node on the first gas supply line. The second valve is disposed upstream of the first valve on the first gas supply line. A controller controls the first and second valves to open the first and second valves in a first mode for supplying a process gas from the process gas source to the substrate processing chamber, and close the first and second valves in a second mode for supplying a purge gas from the purge gas source to the substrate processing chamber.