公开(公告)号：US20170287749A1

公开(公告)日：2017-10-05

申请号：US15512614

申请日：2015-09-15

Applicant: Tokyo Electron Limited

Inventor： Makoto MURAMATSU ,  Tadatoshi TOMITA ,  Hisashi GENJIMA ,  Gen YOU ,  Takahiro KITANO

IPC: H01L21/67 ,  G03D5/00 ,  H01L29/66 ,  D06M14/18 ,  H01L21/02 ,  H01L29/51 ,  C08J7/18

CPC classification number: H01L21/0337 ,  C08J7/18 ,  D06M14/18 ,  G03D5/003 ,  G03F7/0002 ,  G03F7/40 ,  H01J37/32082 ,  H01J37/3255 ,  H01L21/02043 ,  H01L21/027 ,  H01L21/0335 ,  H01L21/31 ,  H01L21/67167 ,  H01L21/67173 ,  H01L21/67178 ,  H01L21/6719 ,  H01L29/511 ,  H01L29/66545 ,  H05H1/46

Abstract: A substrate treatment method of treating a substrate using a block copolymer containing a hydrophilic polymer and a hydrophobic polymer, includes: a resist pattern formation step of forming a predetermined resist pattern by a resist film on the substrate; a thin film formation step of forming a thin film for suppressing deformation of the resist pattern on a surface of the resist pattern; a block copolymer coating step of applying a block copolymer to the substrate after the formation of the thin film; and a polymer separation step of phase-separating the block copolymer into the hydrophilic polymer and the hydrophobic polymer.

公开(公告)号：US20170148641A1

公开(公告)日：2017-05-25

申请号：US15117052

申请日：2015-01-16

Applicant: TOKYO ELECTRON LIMITED

Inventor： Toshikatsu TOBANA ,  Gen YOU ,  Soichiro OKADA

IPC: H01L21/311 ,  H01L21/02 ,  H01L21/683

CPC classification number: H01L21/31138 ,  H01L21/02118 ,  H01L21/31144 ,  H01L21/6831

Abstract: This method for processing a target object includes steps ST1 to ST4. The target object has an organic polymer layer and a resist mask on a substrate. In step ST1, the target object is electrostatically attached to an electrostatic chuck in a plasma processing apparatus. In step ST2, the organic polymer layer is etched through the resist mask by means of a plasma of a first gas. In step ST3, the target object is detached from the electrostatic chuck while a plasma of a second gas is generated. In step 4, the resist mask is peeled off. The second gas is either oxygen gas or a mixture of oxygen gas and a rare gas having an atomic weight lower than that of argon gas.

公开(公告)号：US20130333726A1

公开(公告)日：2013-12-19

申请号：US13910270

申请日：2013-06-05

Applicant: Tokyo Electron Limited

Inventor： Gentaro GOSHI ,  Kazuyuki MITSUOKA ,  Gen YOU ,  Hiroki OHNO ,  Takehiko ORII ,  Takayuki TOSHIMA

IPC: B08B3/10

CPC classification number: B08B3/10 ,  H01L21/67034 ,  H01L21/67051 ,  H01L21/67109

Abstract: The present disclosure provides a substrate processing apparatus including: a processing chamber configured to process a substrate; a fluid supply source configured to supply a substrate processing fluid used in processing for the substrate in a predetermined pressure; a constant pressure supplying path configured to supply the substrate processing fluid from the fluid supply source to the processing chamber in a predetermined pressure without boosting the pressure of the substrate processing liquid; a boosted pressure supplying path configured to boost the pressure of the substrate processing fluid from the fluid supply source into a predetermined pressure by a booster mechanism and supply the pressure boosted substrate processing fluid to the processing chamber; and a control unit configured to switch over the constant pressure supplying path and the boosted pressure supplying path.

Abstract translation: 本公开提供了一种基板处理装置，包括：处理室，被配置为处理基板; 流体供给源，其构造成以预定压力供给用于所述基板的处理中使用的基板处理流体; 恒定压力供给路径，被配置为以预定压力将所述基板处理流体从所述流体供给源供给到所述处理室，而不增加所述基板处理液体的压力; 增压压力供给路径，被配置为通过增压机构将衬底处理流体从流体供给源的压力升高到预定压力，并将增压的衬底处理流体供应到处理室; 以及控制单元，被配置为切换恒压供给路径和升压压力供给路径。