公开(公告)号：US20190341255A1

公开(公告)日：2019-11-07

申请号：US16516344

申请日：2019-07-19

Applicant: Tokyo Electron Limited

Inventor： Makoto MURAMATSU ,  Tadatoshi TOMITA ,  Hisashi GENJIMA ,  Gen YOU ,  Takahiro KITANO

IPC: H01L21/033 ,  H01L21/67 ,  H01J37/32 ,  G03F7/00 ,  H01L29/66 ,  D06M14/18 ,  H01L21/02 ,  H01L29/51 ,  H01L21/31 ,  H01L21/027 ,  G03F7/40 ,  G03D5/00 ,  C08J7/18

Abstract: A substrate treatment method of treating a substrate using a block copolymer containing a hydrophilic polymer and a hydrophobic polymer, includes: a resist pattern formation step of forming a predetermined resist pattern by a resist film on the substrate; a thin film formation step of forming a thin film for suppressing deformation of the resist pattern on a surface of the resist pattern; a block copolymer coating step of applying a block copolymer to the substrate after the formation of the thin film; and a polymer separation step of phase-separating the block copolymer into the hydrophilic polymer and the hydrophobic polymer.

公开(公告)号：US20240027923A1

公开(公告)日：2024-01-25

申请号：US18353300

申请日：2023-07-17

Applicant: Tokyo Electron Limited

Inventor： Tomoya ONITSUKA ,  Shinichiro KAWAKAMI ,  Hisashi GENJIMA

IPC: G03F7/00

CPC classification number: G03F7/70866

Abstract: A substrate processing apparatus for processing a substrate including a metal-containing resist film, includes: a heat treatment part configured to perform a heat treatment on the substrate having the film subjected to an exposing process; a developing process part configured to perform a developing process on the film of the substrate subjected to the heat treatment; and a gas contact part configured to bring the film into contact with an inert gas during a period after the exposing process and before the developing process.

公开(公告)号：US20180065843A1

公开(公告)日：2018-03-08

申请号：US15554026

申请日：2016-02-10

Applicant: Tokyo Electron Limited

Inventor： Makoto MURAMATSU ,  Tadatoshi TOMITA ,  Hisashi GENJIMA ,  Gen YOU ,  Takahiro KITANO ,  Takanori NISHI

IPC: B81C1/00 ,  H01L21/027 ,  H01L21/033 ,  H01L21/67

CPC classification number: B81C1/00031 ,  B81C1/00428 ,  B81C2201/0149 ,  B82Y40/00 ,  C08F297/00 ,  H01L21/0271 ,  H01L21/0337 ,  H01L21/67178 ,  H01L21/67742

Abstract: A substrate treatment method using a block copolymer containing a hydrophilic polymer and a hydrophobic polymer includes a polymer separating step, wherein a ratio of a molecular weight of the hydrophilic polymer in the block copolymer is adjusted to 20% to 40% so that the hydrophilic polymers align at positions corresponding to a hexagonal close-packed structure in a plan view after the polymer separating step, and at the polymer separating step, a columnar first hydrophilic polymer is phase-separated on each of circular patterns of hydrophobic coating films and a columnar second hydrophilic polymer is phase-separated between the first hydrophilic polymers, and a diameter of the circular pattern is set so that the first hydrophilic polymers and the second hydrophilic polymers align at positions corresponding to the hexagonal close-packed structure in a plan view.

公开(公告)号：US20170287749A1

公开(公告)日：2017-10-05

申请号：US15512614

申请日：2015-09-15

Applicant: Tokyo Electron Limited

Inventor： Makoto MURAMATSU ,  Tadatoshi TOMITA ,  Hisashi GENJIMA ,  Gen YOU ,  Takahiro KITANO

IPC: H01L21/67 ,  G03D5/00 ,  H01L29/66 ,  D06M14/18 ,  H01L21/02 ,  H01L29/51 ,  C08J7/18

CPC classification number: H01L21/0337 ,  C08J7/18 ,  D06M14/18 ,  G03D5/003 ,  G03F7/0002 ,  G03F7/40 ,  H01J37/32082 ,  H01J37/3255 ,  H01L21/02043 ,  H01L21/027 ,  H01L21/0335 ,  H01L21/31 ,  H01L21/67167 ,  H01L21/67173 ,  H01L21/67178 ,  H01L21/6719 ,  H01L29/511 ,  H01L29/66545 ,  H05H1/46

Abstract: A substrate treatment method of treating a substrate using a block copolymer containing a hydrophilic polymer and a hydrophobic polymer, includes: a resist pattern formation step of forming a predetermined resist pattern by a resist film on the substrate; a thin film formation step of forming a thin film for suppressing deformation of the resist pattern on a surface of the resist pattern; a block copolymer coating step of applying a block copolymer to the substrate after the formation of the thin film; and a polymer separation step of phase-separating the block copolymer into the hydrophilic polymer and the hydrophobic polymer.

公开(公告)号：US20210159074A1

公开(公告)日：2021-05-27

申请号：US16645712

申请日：2018-08-28

Applicant: TOKYO ELECTRON LIMITED

Inventor： Makoto MURAMATSU ,  Hisashi GENJIMA

IPC: H01L21/02 ,  C23C18/14

Abstract: There is provided a technique of forming an insulating film containing silicon oxide. A coating solution containing polysilazane is applied onto a wafer W, the solvent of the coating solution is volatilized, and the coating film is irradiated with ultraviolet rays in nitrogen atmosphere before performing a curing process. Dangling bonds are generated in silicon which is a pre-hydrolyzed site in polysilazane. Therefore, the energy for hydrolysis is reduced, and unhydrolyzed sites are reduced even when the temperature of the curing process is 350° C. Since efficient dehydration condensation occurs, the crosslinking rate is improved, and a dense (good-quality) insulation film is formed. By forming a protective film on the surface of the coating film to which ultraviolet rays irradiated, the reaction of dangling bonds prior to the curing process is suppressed.

公开(公告)号：US20200211838A1

公开(公告)日：2020-07-02

申请号：US16604744

申请日：2018-03-13

Applicant: TOKYO ELECTRON LIMITED

Inventor： Makoto MURAMATSU ,  Yusuke SAITO ,  Hisashi GENJIMA ,  Hiroyuki FUJII

IPC: H01L21/02 ,  H01L21/324 ,  B05D3/06

Abstract: A technique for obtaining good film quality in forming a silicon-oxide-containing insulating film as a coating film on a substrate. A coating liquid containing polysilazane is applied to a wafer, a solvent in the coating liquid is volatilized, and then the coating film is irradiated with ultraviolet rays under a nitrogen atmosphere before performing a curing process. Thus, dangling bonds are likely to be formed at hydrolyzed portions in polysilazane. Since dangling bonds are formed in advance at portions in silicon to be hydrolyzed, productivity of hydroxyl groups is enhanced. That is, since an energy required for hydrolysis is reduced, the number of the portions remaining without being hydrolyzed is reduced even when the curing process is performed at a low temperature. Therefore, dehydration synthesis occurs efficiently, which increases a crosslinking rate and makes it possible to form a dense (good film quality) insulating film.

公开(公告)号：US20180269072A1

公开(公告)日：2018-09-20

申请号：US15763529

申请日：2016-10-20

Applicant: Tokyo Electron Limited

Inventor： Makoto MURAMATSU ,  Tadatoshi TOMITA ,  Hisashi GENJIMA ,  Takahiro KITANO

IPC: H01L21/311 ,  H01L21/027 ,  H01L21/67 ,  G03F7/20 ,  G03F7/30 ,  G03F7/16 ,  G03F7/42 ,  G03F7/38

CPC classification number: H01L21/31138 ,  G03F7/16 ,  G03F7/168 ,  G03F7/2002 ,  G03F7/30 ,  G03F7/38 ,  G03F7/422 ,  H01L21/0271 ,  H01L21/0276 ,  H01L21/31133 ,  H01L21/67069 ,  H01L21/6715 ,  H01L21/67167 ,  H01L21/67178 ,  H01L21/67225

Abstract: A substrate processing method of processing a substrate using a block copolymer containing a hydrophilic polymer and a hydrophobic polymer, the substrate processing method includes: a block copolymer coating step of applying the block copolymer onto the substrate on which a predetermined projecting and recessed pattern is formed, to form a coating film of the block copolymer; a polymer separation step of phase-separating the block copolymer into the hydrophilic polymer and the hydrophobic polymer; a polymer removal step of selectively removing the hydrophilic polymer from the phase-separated block copolymer; and after the block copolymer coating step and before the polymer removal step, a film thickness reduction step of reducing a film thickness of the coating film of the block copolymer.