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公开(公告)号：US20220208534A1
公开(公告)日：2022-06-30
申请号：US17556025
申请日：2021-12-20
Applicant: TOKYO ELECTRON LIMITED
Inventor： Masato SHINADA , Tetsuya MIYASHITA , Einstein Noel ABARRA
Abstract: There is provided a sputtering apparatus comprising: a target from which sputtered particles are emitted; a substrate support configured to support a substrate; a substrate moving mechanism configured to move the substrate in one direction; and a shielding member disposed between the target and the substrate support and having an opening through which the sputtered particles pass. The shielding member includes a first shielding member and a second shielding member disposed in a vertical direction.
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公开(公告)号：US20210285096A1
公开(公告)日：2021-09-16
申请号：US17184089
申请日：2021-02-24
Applicant: Tokyo Electron Limited
Inventor： Masato SHINADA , Tamaki TAKEYAMA , Kazunaga ONO , Naoyuki SUZUKI , Hiroaki CHIHAYA , Einstein Noel ABARRA
Abstract: A film thickness measurement apparatus includes: a stage that places a substrate having a film formed thereon and measures a thickness of the film in-situ in a film forming apparatus; a film thickness meter including a light emitter that emits light toward the substrate disposed on the stage and a light receiving sensor that receives the light reflected by the substrate for measuring the thickness of the film in-situ; a moving mechanism including a multi-joint arm that moves an irradiation point of the light on the substrate; a distance meter that measures a distance between the light receiving sensor and the irradiation point on the substrate; and a distance adjustor that adjusts the distance between the light receiving sensor and the irradiation point on the substrate.
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公开(公告)号：US20210257198A1
公开(公告)日：2021-08-19
申请号：US17172327
申请日：2021-02-10
Applicant: Tokyo Electron Limited
Inventor： Masato SHINADA , Einstein Noel ABARRA
Abstract: A cathode unit for performing a sputtering film formation includes: a target that emits sputtering particles; a target cooler that includes a cooling plate to which the target is bonded; and a power supply that supplies a power to the target. The target has a high-temperature region that has a higher temperature than other regions of the target during a film formation. The cooling plate includes a coolant flow space through which a coolant flows, and a first wall and a second wall that define the coolant flow space in a thickness direction. In the coolant flow space, a flow path of the coolant is formed by a first partition plate and a second partition plate. The first partition plate does not exist at a portion of the coolant flow space that corresponds to the high-temperature region.
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Patent Agency Ranking
公开(公告)号：US20240177978A1
公开(公告)日：2024-05-30
申请号：US18511890
申请日：2023-11-16
Applicant: TOKYO ELECTRON LIMITED
Inventor： Masato SHINADA , Yusuke KIKUCHI
CPC classification number: H01J37/32862 , B08B5/00 , B08B7/0092 , B08B7/04 , C23C14/34 , C23C14/505 , H01J37/32091 , H01J37/32724 , H01J37/3405 , H01J2237/002 , H01J2237/20214 , H01J2237/332
Abstract: Provided is a substrate processing apparatus comprising a processing chamber, a rotatable substrate support configured to hold a substrate in the processing chamber, a freezing device that is in contact with or separated from the substrate support and is configured to cool the substrate support, a mechanism configured to rotate the substrate support and raise and lower the freezing device, a power supply part configured to supply a radio frequency (RF) power, and a power supply line that penetrates through the freezing device, has a contact portion, and is configured to switch supply and stop of supply of the RF power by connecting the contact portion to a specific position of the substrate support or disconnecting the contact portion from the specific position of the substrate support.
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公开(公告)号：US20230249306A1
公开(公告)日：2023-08-10
申请号：US18164003
申请日：2023-02-03
Applicant: Tokyo Electron Limited
Inventor： Yusuke KIKUCHI , Masato SHINADA , Motoi YAMAGATA , Hiroshi SONE
CPC classification number: B23Q11/10 , B23Q5/34 , B23Q2716/00 , B23Q2717/00
Abstract: A method of cooling a substrate by bringing a cooler into direct contact with a stage on which the substrate is placed, and processing the substrate while rotating the stage in a state in which the cooler is moved away from the stage, includes: cooling the cooler to a target temperature in a state in which the stage is brought into direct contact with the cooler, and cooling the stage to an initial cooling temperature; raising a temperature of the stage; controlling the temperature of the stage to a steady cooling temperature when the temperature of the stage reaches the steady cooling temperature; and placing the substrate on the stage kept at the steady cooling temperature, and continuously performing a substrate processing on a plurality of substrates while rotating the stage in a state in which the stage is moved away from the cooler.
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公开(公告)号：US20230051865A1
公开(公告)日：2023-02-16
申请号：US17975619
申请日：2022-10-28
Applicant: Tokyo Electron Limited
Inventor： Takuya SEINO , Yasushi KODASHIMA , Naoki WATANABE , Hiroyuki TOSHIMA , Masato SHINADA , Tetsuya MIYASHITA
Abstract: The PVD apparatus includes a chamber, a plurality of stages, a first target holder, a power supply mechanism, and a shield. The plurality of stages are provided inside the chamber, and each of the plurality of stages is configured to place at least one substrate on an upper surface thereof. The first target holder is configured to hold at least one target provided for one stage, the target being exposed to a space inside the chamber. The power supply mechanism supplies power to the target via the first target holder. The shield is provided inside the chamber and a part of the shield is disposed between a first stage and a second stage in the plurality of stages, and between a first processing space on the first stage and a second processing space on the second stage.
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公开(公告)号：US20220025511A1
公开(公告)日：2022-01-27
申请号：US17384058
申请日：2021-07-23
Applicant: TOKYO ELECTRON LIMITED
Inventor： Masato SHINADA , Einstein Noel ABARRA , Hiroyuki TOSHIMA , Shota ISHIBASHI
Abstract: An apparatus for performing a sputtering process on a substrate is provided. The apparatus includes a processing chamber having a substrate support on which the substrate is placed, a target for emitting target particles to be adhered to the substrate by plasma formed in the processing chamber, a magnet, provided on a rear surface of the target, for adjusting a state of the plasma on the surface of the target, and a magnet moving mechanism for repeatedly moving the magnet between a position on one side and a position on the other side set across a center portion on the rear surface of the target. The apparatus further includes a collimator having two regulating plates for limiting an incident angle of the target particles to the substrate, and an arrangement position adjustment mechanism adjusting positions of the two regulating plates according to the movement of the magnet.
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公开(公告)号：US20210118653A1
公开(公告)日：2021-04-22
申请号：US17050093
申请日：2019-03-20
Applicant: Tokyo Electron Limited
Inventor： Masato SHINADA , Hiroyuki TOSHIMA , Einstein Noel ABARRA
Abstract: A film formation device includes a target holder configured to hold a target for emitting sputtering particles in a processing space inside a processing chamber, a sputtering particle emitting part configured to emit the sputtering particles from the target, a sputtering particle shielding plate having a passage hole through which the emitted sputtering particles pass, a shielding member provided to shield the passage hole, a movement mechanism configured to move the shielding member in the horizontal direction, and a controller. The controller controls the shielding member, which has the placement portion on which a substrate is placed, to be moved in one direction of the horizontal direction, and controls the sputtering particles to be emitted from the target. The sputtering particles passed through the passage hole are deposited on the substrate.
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