公开(公告)号：US20180301622A1

公开(公告)日：2018-10-18

申请号：US15566384

申请日：2016-05-02

Applicant: Tokyo Electron Limited

Inventor： Takuya KUBO ,  Song yun KANG ,  Keiichi SHIMODA ,  Tetsuya OHISHI

IPC: H01L43/12 ,  H01L43/02 ,  H01F10/32 ,  H01F41/34 ,  H01L27/22 ,  H01L21/67 ,  H01J37/32 ,  H01L21/66 ,  G11C11/16

CPC classification number: H01L43/12 ,  G11B5/8404 ,  G11C11/161 ,  H01F10/3259 ,  H01F10/3272 ,  H01F41/34 ,  H01J37/32091 ,  H01J37/32183 ,  H01J37/32449 ,  H01J37/32724 ,  H01J37/32853 ,  H01J37/32963 ,  H01J2237/002 ,  H01J2237/24507 ,  H01J2237/327 ,  H01J2237/334 ,  H01J2237/335 ,  H01L21/67028 ,  H01L21/67069 ,  H01L21/67109 ,  H01L21/67253 ,  H01L21/6831 ,  H01L21/6833 ,  H01L22/26 ,  H01L27/222 ,  H01L43/02 ,  H01L43/10

Abstract: A method of cleaning a substrate processing apparatus that etches a film including a metal, the method include a first cleaning step of providing a gas containing a hydrogen-containing gas, and removing a carbon-containing deposition by plasma generated from the gas containing the hydrogen-containing gas; a second cleaning step of, after the first cleaning step, providing an inert gas, and removing a metal-containing deposition by plasma generated from the inert gas; and a third cleaning step of, after the second cleaning step, providing a gas containing a fluorine-containing gas and an oxygen-containing gas, and removing a silicon-containing deposition by plasma generated from the gas containing the fluorine-containing gas and the oxygen-containing gas.

公开(公告)号：US20140299272A1

公开(公告)日：2014-10-09

申请号：US14307741

申请日：2014-06-18

Applicant: TOKYO ELECTRON LIMITED

Inventor： Akihiro TSUJI ,  Song yun KANG

IPC: H01J37/32

CPC classification number: H01J37/32201 ,  H01J37/32229 ,  H01J37/32238 ,  H01J37/32477

Abstract: There is provided a plasma generation device, comprising: a waveguide configured to propagate a microwave; a plasma generation vessel connected to the waveguide; and a dielectric window interposed between the waveguide and the plasma generation vessel to introduce the microwave propagated by the waveguide into the plasma generation vessel. The plasma generation vessel is sphere-shaped and is disposed adjacent to a processing vessel configured to accommodate a substrate, and an interior of the plasma generation vessel is in communication with an interior of the processing vessel.

Abstract translation: 提供了一种等离子体产生装置，包括：波导，被配置为传播微波; 连接到波导的等离子体发生器; 以及介于所述波导和所述等离子体发生容器之间的电介质窗口，以将由所述波导传播的微波引入所述等离子体发生容器。 等离子体发生容器是球形的，并且被设置成与配置成容纳衬底的处理容器相邻，并且等离子体产生容器的内部与处理容器的内部连通。