公开(公告)号：US09997332B2

公开(公告)日：2018-06-12

申请号：US15008064

申请日：2016-01-27

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yohei Yamazawa ,  Masashi Saito ,  Kazuki Denpoh ,  Chishio Koshimizu ,  Jun Yamawaku

IPC: C23C16/00 ,  H01L21/306 ,  H01J37/32 ,  H05H1/46 ,  H01L21/67 ,  H01L21/683

CPC classification number: H01J37/3211 ,  H01J37/321 ,  H01J37/32174 ,  H01J37/3244 ,  H01J2237/334 ,  H01L21/67069 ,  H01L21/6831 ,  H05H1/46

Abstract: A plasma processing apparatus includes: an evacuable processing chamber including a dielectric window; a substrate supporting unit, provided in the processing chamber, for mounting thereon a target substrate; a processing gas supply unit for supplying a desired processing gas to the processing chamber to perform a plasma process on the target substrate; a first RF antenna, provided on the dielectric window, for generating a plasma by an inductive coupling in the processing chamber; and a first RF power supply unit for supplying an RF power to the first RF antenna. The first RF antenna includes a primary coil provided on or above the dielectric window and electrically connected to the first RF power supply unit; and a secondary coil provided such that the coils are coupled with each other by an electromagnetic induction therebetween while being arranged closer to a bottom surface of the dielectric window than the primary coil.

公开(公告)号：US09941097B2

公开(公告)日：2018-04-10

申请号：US14250514

申请日：2014-04-11

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yohei Yamazawa ,  Chishio Koshimizu ,  Masashi Saito ,  Kazuki Denpoh ,  Jun Yamawaku

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/683

CPC classification number: H01J37/3211 ,  H01J37/321 ,  H01J37/32146 ,  H01L21/67109 ,  H01L21/6831

Abstract: A plasma processing apparatus includes a processing chamber including a dielectric window; a coil-shaped RF antenna, provided outside the dielectric window; a substrate supporting unit provided in the processing chamber; a processing gas supply unit; an RF power supply unit for supplying an RF power to the RF antenna to generate a plasma of the processing gas by an inductive coupling in the processing chamber, the RF power having an appropriate frequency for RF discharge of the processing gas; a correction coil, provided at a position outside the processing chamber where the correction coil is to be coupled with the RF antenna by an electromagnetic induction, for controlling a plasma density distribution on the substrate in the processing chamber; a switching device provided in a loop of the correction coil; and a switching control unit for on-off controlling the switching device at a desired duty ratio by pulse width modulation.

公开(公告)号：US20180053635A1

公开(公告)日：2018-02-22

申请号：US15798714

申请日：2017-10-31

Applicant: Tokyo Electron Limited

Inventor： Yohei Yamazawa ,  Naohiko Okunishi ,  Hironobu Misawa ,  Hidehito Soeta

IPC: H01J37/32

CPC classification number: H01J37/32623 ,  H01J37/32091 ,  H01J37/32541 ,  H01J37/3255 ,  H01J37/32697

Abstract: A plasma processing apparatus includes at least one asymmetry member that causes a non-uniformity of plasma density around a high frequency electrode in an azimuthal direction; and a plasma density distribution controller. The plasma density distribution controller includes a first conductor which has first and second surfaces facing opposite directions to each other and is electrically connected with the high frequency electrode, the first surface facing a portion of a rear surface of the high frequency electrode; a second conductor which includes a first connecting portion electrically connected with a portion of the second surface of the first conductor and a second connecting portion electrically connected with a conductive grounding member electrically grounded around the high frequency electrode; and a conductor moving unit for varying a position of at least one of the first conductor and the second conductor in an azimuthal direction of the high frequency electrode.

公开(公告)号：US20160155613A1

公开(公告)日：2016-06-02

申请号：US15015215

申请日：2016-02-04

Applicant: Tokyo Electron Limited

Inventor： Yohei Yamazawa

IPC: H01J37/32

CPC classification number: H01J37/3211 ,  H01J37/321 ,  H01J37/3244 ,  H01J37/32715

Abstract: A plasma processing apparatus includes: a processing chamber; a substrate holding unit; a processing gas supply unit; a RF antenna having an inner antenna coil and an outer antenna coil; a high frequency power supply unit; at least one floating coil that is in an electrically floating state and provided outside the processing chamber to be coupled to at least one of the inner antenna coil and the outer antenna coil by an electromagnetic induction; and a capacitor. The inner antenna coil includes a single inner coil segment or more than one inner coil segments connected in series, the outer antenna coil includes a plurality of outer coil segments segmented in a circumferential direction and electrically connected with each other in parallel, and the at least one floating coil is positioned between the inner antenna coil and the outer antenna coil in a radial direction.

Abstract translation: 一种等离子体处理装置，包括：处理室; 基板保持单元; 处理气体供应单元; 具有内天线线圈和外天线线圈的RF天线; 高频电源单元; 至少一个浮动线圈，其处于电浮动状态，并设置在所述处理室的外部，以通过电磁感应耦合到所述内部天线线圈和所述外部天线线圈中的至少一个; 和电容器。 内部天线线圈包括单个内部线圈段或多个串联连接的内部线圈段，外部天线线圈包括沿圆周方向分段并且彼此并联电连接的多个外部线圈段，并且至少 一个浮动线圈沿径向位于内天线线圈和外天线线圈之间。

公开(公告)号：US12224164B2

公开(公告)日：2025-02-11

申请号：US17514815

申请日：2021-10-29

Applicant: Tokyo Electron Limited

Inventor： Chelsea Dubose ,  Barton Lane ,  Merritt Funk ,  Justin Moses ,  Yohei Yamazawa

IPC: H01J37/32

Abstract: A radio frequency (RF) system including: a first conductive covering surface, a portion of the first conductive covering surface including a portion of the first outer wall of a first RF device; a second conductive covering surface aligned to the first conductive covering surface, the second conductive covering surface being disposed around the insulating hole; an insulating hole for an RF center conductor extending through the first conductive covering surface and the second conductive covering surface, the first conductive covering surface and the second conductive covering surface being disposed around the insulating hole; a cavity bounded by the first conductive covering surface and the second conductive covering surface, the cavity being an insulating region; and an RF signal pickup disposed within the cavity.

公开(公告)号：US20240038496A1

公开(公告)日：2024-02-01

申请号：US18486220

申请日：2023-10-13

Applicant: Tokyo Electron Limited

Inventor： Barton Lane ,  Merritt Funk ,  Yohei Yamazawa ,  Justin Moses ,  Chelsea DuBose ,  Michael Hummel

IPC: H01J37/32 ,  G01R29/08

CPC classification number: H01J37/32174 ,  G01R29/0878

Abstract: A radio frequency sensor assembly includes a sensor casing disposed around a central hole, the sensor casing including a first conductive cover and a second conductive cover. The assembly includes a cavity disposed around the central hole and includes a dielectric material, the cavity being bounded by a first major outer surface and a second major outer surface along a radial direction from a center of the central hole, where the first conductive cover is electrically coupled to the second conductive cover through a coupling region beyond the second major outer surface of the cavity, and electrically insulated from the second conductive cover by the cavity and the central hole. The assembly includes a current sensor electrically insulated from the sensor casing and including a current pickup disposed symmetrically around the central hole, the current pickup being disposed within the cavity and being insulated from the sensor casing.

公开(公告)号：US20210407775A1

公开(公告)日：2021-12-30

申请号：US16913526

申请日：2020-06-26

Applicant: Tokyo Electron Limited

Inventor： Justin Moses ,  Barton Lane ,  Merritt Funk ,  Chelsea Dubose ,  Yohei Yamazawa ,  Michael Hummel

IPC: H01J37/32 ,  H01J37/24

Abstract: A radio frequency (RF) system includes a RF power source configured to power a load with an RF signal; an RF pipe including an inner conductor and an outer conductor connected to ground coupling the RF power source to the load; and a current sensor aligned to a central axis of the RF pipe carrying the RF signal. A sensor casing is disposed around the RF pipe, where the sensor casing includes a conductive material connected to the outer conductor of the RF pipe. A gallery is disposed within the sensor casing and outside the outer conductor of the RF pipe, where the current sensor is disposed in the gallery. A slit in the outer conductor of the RF pipe exposes the current sensor to a magnetic field due to the current of the RF signal in the inner conductor of the RF pipe.

公开(公告)号：US11037762B2

公开(公告)日：2021-06-15

申请号：US15798714

申请日：2017-10-31

Applicant: Tokyo Electron Limited

Inventor： Yohei Yamazawa ,  Naohiko Okunishi ,  Hironobu Misawa ,  Hidehito Soeta

IPC: H01J37/32

Abstract: A plasma processing apparatus includes at least one asymmetry member that causes a non-uniformity of plasma density around the high frequency electrode; and a plasma density distribution controller that is arranged depending on arrangement of the at least one asymmetry member to suppress the non-uniformity of plasma density around the high frequency electrode in the azimuthal direction. The plasma density distribution controller includes a first conductor which has first and second surfaces facing opposite directions to each other and is electrically connected with the rear surface of the high frequency electrode with respect to the first high frequency power; and a second conductor which includes a first connecting portion(s) electrically connected with a portion of the second surface of the first conductor and a second connecting portion electrically connected with a conductive grounding member electrically grounded around the high frequency electrode with respect to the first high frequency power.

公开(公告)号：US10804076B2

公开(公告)日：2020-10-13

申请号：US15079381

申请日：2016-03-24

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yohei Yamazawa ,  Chishio Koshimizu ,  Kazuki Denpoh ,  Jun Yamawaku ,  Masashi Saito

IPC: C23C16/00 ,  H01L21/326 ,  H01J37/32 ,  C23C16/50 ,  C23C16/455 ,  H05H1/46

Abstract: A plasma processing apparatus includes a processing chamber including a dielectric window; a coil shaped RF antenna provided outside the dielectric window; a substrate supporting unit, provided in the processing chamber, for mounting thereon a target substrate to be processed; a processing gas supply unit for supplying a desired processing gas to the processing chamber to perform a desired plasma process on the target substrate; and an RF power supply unit for supplying an RF power to the RF antenna to generate a plasma of the processing gas by an inductive coupling in the processing chamber. The apparatus further includes a floating coil electrically floated and arranged at a position outside the processing chamber where the floating coil is to be coupled with the RF antenna by an electromagnetic induction; and a capacitor provided in a loop of the floating coil.

公开(公告)号：US09583312B2

公开(公告)日：2017-02-28

申请号：US14100224

申请日：2013-12-09

Applicant: Tokyo Electron Limited

Inventor： Jun Yamawaku ,  Chishio Koshimizu ,  Yohei Yamazawa ,  Mitsuhiro Tachibana ,  Hitoshi Kato ,  Takeshi Kobayashi ,  Shigehiro Miura ,  Takafumi Kimura

IPC: H01L21/306 ,  C23C16/00 ,  H01J37/32 ,  H01L21/02 ,  H01L21/687 ,  C23C16/455 ,  C23C16/458

CPC classification number: H01J37/321 ,  C23C16/45536 ,  C23C16/45551 ,  C23C16/4584 ,  H01J37/32082 ,  H01J37/3211 ,  H01J37/3244 ,  H01J37/32651 ,  H01J37/32715 ,  H01J37/32733 ,  H01J37/32752 ,  H01L21/02164 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02214 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/68764 ,  H01L21/68771

Abstract: A film formation device to conduct a film formation process for a substrate includes a rotating table, a film formation area configured to include a process gas supply part, a plasma processing part, a lower bias electrode provided at a lower side of a position of a height of the substrate on the rotating table, an upper bias electrode arranged at the same position of the height or an upper side of a position of the height, a high-frequency power source part connected to at least one of the lower bias electrode and the upper bias electrode and configured to form a bias electric potential on the substrate in such a manner that the lower bias electrode and the upper bias electrode are capacitively coupled, and an exhaust mechanism.

Abstract translation: 用于对基板进行成膜处理的成膜装置包括旋转台，成膜区域，其被配置为包括处理气体供给部，等离子体处理部，设置在位置的下侧的下偏置电极 位于旋转台上的基板的高度，布置在高度位置的相同位置的上偏置电极或高度位置的上侧;高频电源部分，连接到下偏置电极和下偏置电极中的至少一个; 所述上偏置电极并且被配置为以所述下偏置电极和所述上偏置电极电容耦合的方式在所述衬底上形成偏置电位，以及排气机构。