摘要:
The present invention relates to a method and apparatus for measuring a three-dimensional profile using a SEM, capable of accurately measuring the three-dimensional profile of even a flat surface or a nearly vertical surface based on the inclination angle dependence of the amount of secondary electron image signal detected by the SEM. Specifically, a tilt image obtaining unit obtains a tilt image (a tilt secondary electron image) I(2) of flat regions a and c1 on a pattern to be measured by using an electron beam incident on the pattern from an observation direction φ(2). Then, profile measuring units presume the slope (or surface inclination angle) at each point on the pattern based on the obtained tilt image and integrate successively each presumed slope value (or surface inclination angle value) to measure three-dimensional profiles S2a and S2c. This arrangement allows a three-dimensional profile to be accurately measured.
摘要:
A model based measurement method is capable of estimating a cross-sectional shape by matching various pre-created cross-sectional shapes with a library of SEM signal waveforms. The present invention provides a function for determining whether or not it is appropriate to create a model of a cross-sectional shape or a function for verifying the accuracy of estimation results to a conventional model based measurement method, wherein a solution space (expected solution space) is obtained by matching library waveforms and is displayed before measuring the real pattern by means of model based measurement. Moreover, after the real pattern is measured by means of model based measurement, the solution space (real solution space) is obtained by matching the real waveforms with the library waveforms and is displayed.
摘要:
The invention relates to a technique of improving a contrast of a lower-layer pattern in a multi layer by synthesizing detected signals from a plurality of detectors by using an appropriate allocation ratio in accordance with pattern arrangement. In a charged particle beam device capable of improving image quality by using detected images obtained from a plurality of detectors and in a method of improving the image quality, a method of generating one or more output images from detected images corresponding to respective outputs of the detectors that are arranged at different locations is controlled by using information of a pattern direction, an edge strength, or others calculated from a design data or the detected image. In this manner, a detection area of the detected signals can be expanded by using the plurality of detectors, and the image quality such as the contrast can be improved by synthesizing the detected signals by using the pattern direction or the edge strength calculated from the design data or the detected images.
摘要:
The present invention relates to a method and apparatus for measuring a three-dimensional profile using a SEM, capable of accurately measuring the three-dimensional profile of even a flat surface or a nearly vertical surface based on the inclination angle dependence of the amount of secondary electron image signal detected by the SEM. Specifically, a tilt image obtaining unit obtains a tilt image (a tilt secondary electron image) I(2) of flat regions a and c1 on a pattern to be measured by using an electron beam incident on the pattern from an observation direction φ(2). Then, profile measuring units presume the slope (or surface inclination angle) at each point on the pattern based on the obtained tilt image and integrate successively each presumed slope value (or surface inclination angle value) to measure three-dimensional profiles S2a and S2c. This arrangement allows a three-dimensional profile to be accurately measured.
摘要:
A model based measurement method is capable of estimating a cross-sectional shape by matching various pre-created cross-sectional shapes with a library of SEM signal waveforms. The present invention provides a function for determining whether or not it is appropriate to create a model of a cross-sectional shape or a function for verifying the accuracy of estimation results to a conventional model based measurement method, wherein a solution space (expected solution space) is obtained by matching library waveforms and is displayed before measuring the real pattern by means of model based measurement. Moreover, after the real pattern is measured by means of model based measurement, the solution space (real solution space) is obtained by matching the real waveforms with the library waveforms and is displayed.
摘要:
The present invention is for providing a scanning electron microscope system adapted to output contour information fitting in with the real pattern edge end of a sample, and is arranged to generate a local projection waveform by projecting the scanning electron microscope image in the tangential direction with respect to the pattern edge at each point of the pattern edge of the scanning electron microscope image, estimate the cross-sectional shape of the pattern transferred on the sample by applying the local projection waveform generated at each point to a library, which has previously been created, correlating the cross-sectional shape with the electron beam signal waveform, obtain position coordinate of the edge end fitting in with the cross-sectional shape, and output the contour of the pattern as a range of position coordinates.
摘要:
Beforehand, the device characteristic patterns of each critical dimension SEM are measured, a sectional shape of an object to undergo dimension measurement is presumed by a model base library (MBL) matching system, dimension measurements are carried out by generating signal waveforms through SEM simulation by inputting the presumed sectional shapes and the device characteristic parameters, and differences in the dimension measurement results are registered as machine differences. In actual measurements, from the dimension measurement results in each critical dimension SEM, machine differences are corrected by subtracting the registered machine differences. Furthermore, changes in critical dimension SEM's over time are monitored by periodically measuring the above-mentioned device characteristic parameters and predicting the above-mentioned dimension measurement results. According to the present invention, actual measurements of machine differences, which require considerable time and effort, are unnecessary. In addition, the influence of changes in samples over time, which is problematic in monitoring changes in devices over time, can be eliminated.
摘要:
A method of inspecting patterns, including: adjusting a brightness of at least one of a first bright field image and a second bright field image detected from a specimen and directed to similar patterns on differing parts of the specimen, so as to more closely match a brightness; comparing the images which are adjusted in brightness to match with each other to detect dissimilarities indicative of a defect of the pattern, wherein in adjusting the brightness, the brightness between the first bright field image and the second bright field image is adjusted by performing a gradation conversion of at least one of the brightness between the first bright field image and the second bright field image; and wherein in the comparing, said defect of the pattern is detected by using information of a scattered diagram of brightness of the first bright field image and the second bright field image.
摘要:
An apparatus for processing a defect candidate image, including: an imager for taking an enlarged image of a specimen; an image processor for processing the image taken by the imager to detect defect candidates existing on the specimen and classify the detected defect candidates into one of plural defect classes; a memory for storing information of the defect candidates including the images of the defect candidates and the classified defect class data outputted from the image processor; and a display unit having a display screen for displaying information stored in the memory, wherein the display unit displays an image of the defect candidates together with the defect class data stored in the memory and the displayed defect class data is changeable on the display screen, and the memory changes the stored defect class data of the displayed defect candidate to the changed defect class data.
摘要:
Disclosed is a scanning electron microscope (SEM) for realizing high-precision dimension measurement of a sample, such as an ArF exposure photoresist, that requires the measurement of a dimension by a low S/N signal waveform. To this end, partial waveforms (or partial images) of sample signal waveforms (or an images) acquired from a dimension measurement target sample and a sample material of the same kind are registered in advance, a measurement target signal waveform (or an image) obtained from the dimension measurement target sample and the sample registration waveform are combined, and a dimension of the dimension measurement target pattern is calculated based on the combination result.