Method and apparatus for measuring three-dimensional shape of specimen by using SEM
    11.
    发明授权
    Method and apparatus for measuring three-dimensional shape of specimen by using SEM 有权
    用SEM测量样品三维形状的方法和装置

    公开(公告)号:US07230243B2

    公开(公告)日:2007-06-12

    申请号:US11156478

    申请日:2005-06-21

    CPC分类号: H01J37/28 H01J2237/2814

    摘要: The present invention relates to a method and apparatus for measuring a three-dimensional profile using a SEM, capable of accurately measuring the three-dimensional profile of even a flat surface or a nearly vertical surface based on the inclination angle dependence of the amount of secondary electron image signal detected by the SEM. Specifically, a tilt image obtaining unit obtains a tilt image (a tilt secondary electron image) I(2) of flat regions a and c1 on a pattern to be measured by using an electron beam incident on the pattern from an observation direction φ(2). Then, profile measuring units presume the slope (or surface inclination angle) at each point on the pattern based on the obtained tilt image and integrate successively each presumed slope value (or surface inclination angle value) to measure three-dimensional profiles S2a and S2c. This arrangement allows a three-dimensional profile to be accurately measured.

    摘要翻译: 本发明涉及一种用于使用SEM测量三维轮廓的方法和装置,其能够基于二次侧的量的倾斜角度依赖性精确地测量均匀的平面或几乎垂直的表面的三维轮廓 电子图像信号由SEM检测。 具体地说,倾斜图像获取单元通过使用从观察方向phi入射到图案上的电子束来获得待测图案上的平坦区域a和c 1的倾斜图像(倾斜二次电子图像)I(2) 2)。 然后,轮廓测量单元基于所获得的倾斜图像来假设在图案上的每个点处的斜率(或表面倾斜角),并且连续地积分每个假设的斜率值(或表面倾斜角值),以测量三维轮廓S 2a和 S 2 c。 这种布置允许精确地测量三维轮廓。

    Shape measurement method, and system therefor
    12.
    发明授权
    Shape measurement method, and system therefor 有权
    形状测量方法及其系统

    公开(公告)号:US09354049B2

    公开(公告)日:2016-05-31

    申请号:US13880429

    申请日:2011-10-21

    IPC分类号: G01B21/04 G01B15/04 H01L21/66

    CPC分类号: G01B21/04 G01B15/04 H01L22/12

    摘要: A model based measurement method is capable of estimating a cross-sectional shape by matching various pre-created cross-sectional shapes with a library of SEM signal waveforms. The present invention provides a function for determining whether or not it is appropriate to create a model of a cross-sectional shape or a function for verifying the accuracy of estimation results to a conventional model based measurement method, wherein a solution space (expected solution space) is obtained by matching library waveforms and is displayed before measuring the real pattern by means of model based measurement. Moreover, after the real pattern is measured by means of model based measurement, the solution space (real solution space) is obtained by matching the real waveforms with the library waveforms and is displayed.

    摘要翻译: 基于模型的测量方法能够通过将各种预先创建的横截面形状与SEM信号波形的库进行匹配来估计横截面形状。 本发明提供一种功能,用于确定是否适于创建横截面形状的模型或用于验证估计结果的准确性的功能,以用于基于常规的基于模型的测量方法,其中,解空间(预期解空间 )通过匹配库波形获得,并且在通过基于模型的测量测量实际图案之前显示。 此外,在通过基于模型的测量来测量实际模式之后,通过将实际波形与库波形相匹配来获得解空间(实解空间),并显示。

    Charged particle beam device and a method of improving image quality of the same
    13.
    发明授权
    Charged particle beam device and a method of improving image quality of the same 有权
    带电粒子束装置及其提高图像质量的方法

    公开(公告)号:US09019362B2

    公开(公告)日:2015-04-28

    申请号:US13513280

    申请日:2010-11-08

    摘要: The invention relates to a technique of improving a contrast of a lower-layer pattern in a multi layer by synthesizing detected signals from a plurality of detectors by using an appropriate allocation ratio in accordance with pattern arrangement. In a charged particle beam device capable of improving image quality by using detected images obtained from a plurality of detectors and in a method of improving the image quality, a method of generating one or more output images from detected images corresponding to respective outputs of the detectors that are arranged at different locations is controlled by using information of a pattern direction, an edge strength, or others calculated from a design data or the detected image. In this manner, a detection area of the detected signals can be expanded by using the plurality of detectors, and the image quality such as the contrast can be improved by synthesizing the detected signals by using the pattern direction or the edge strength calculated from the design data or the detected images.

    摘要翻译: 本发明涉及一种通过根据图案布置使用合适的分配比例来合成来自多个检测器的检测信号来提高多层下层图案的对比度的技术。 在能够通过使用从多个检测器获得的检测图像来提高图像质量的带电粒子束装置中,以及提高图像质量的方法中,提供一种从与检测器的各个输出对应的检测图像生成一个或多个输出图像的方法 通过使用从设计数据或检测到的图像计算的图案方向,边缘强度或其他的信息来控制布置在不同位置处的位置。 以这种方式,可以通过使用多个检测器来扩展检测信号的检测区域,并且可以通过使用从设计计算出的图案方向或边缘强度合成检测信号来提高诸如对比度的图像质量 数据或检测到的图像。

    Method and apparatus for measuring three-dimensional shape of specimen by using SEM
    14.
    发明申请
    Method and apparatus for measuring three-dimensional shape of specimen by using SEM 有权
    用SEM测量样品三维形状的方法和装置

    公开(公告)号:US20050285034A1

    公开(公告)日:2005-12-29

    申请号:US11156478

    申请日:2005-06-21

    IPC分类号: H01J37/28

    CPC分类号: H01J37/28 H01J2237/2814

    摘要: The present invention relates to a method and apparatus for measuring a three-dimensional profile using a SEM, capable of accurately measuring the three-dimensional profile of even a flat surface or a nearly vertical surface based on the inclination angle dependence of the amount of secondary electron image signal detected by the SEM. Specifically, a tilt image obtaining unit obtains a tilt image (a tilt secondary electron image) I(2) of flat regions a and c1 on a pattern to be measured by using an electron beam incident on the pattern from an observation direction φ(2). Then, profile measuring units presume the slope (or surface inclination angle) at each point on the pattern based on the obtained tilt image and integrate successively each presumed slope value (or surface inclination angle value) to measure three-dimensional profiles S2a and S2c. This arrangement allows a three-dimensional profile to be accurately measured.

    摘要翻译: 本发明涉及一种用于使用SEM测量三维轮廓的方法和装置,其能够基于二次侧的量的倾斜角度依赖性精确地测量均匀的平面或几乎垂直的表面的三维轮廓 电子图像信号由SEM检测。 具体地说,倾斜图像获取单元通过使用从观察方向phi入射到图案上的电子束来获得待测图案上的平坦区域a和c 1的倾斜图像(倾斜二次电子图像)I(2) 2)。 然后,轮廓测量单元基于所获得的倾斜图像来假设在图案上的每个点处的斜率(或表面倾斜角),并且连续地积分每个假设的斜率值(或表面倾斜角值),以测量三维轮廓S 2a和 S 2 c。 这种布置允许精确地测量三维轮廓。

    SHAPE MEASUREMENT METHOD, AND SYSTEM THEREFOR
    15.
    发明申请
    SHAPE MEASUREMENT METHOD, AND SYSTEM THEREFOR 有权
    形状测量方法及其系统

    公开(公告)号:US20130262027A1

    公开(公告)日:2013-10-03

    申请号:US13880429

    申请日:2011-10-21

    IPC分类号: G01B21/04

    CPC分类号: G01B21/04 G01B15/04 H01L22/12

    摘要: A model based measurement method is capable of estimating a cross-sectional shape by matching various pre-created cross-sectional shapes with a library of SEM signal waveforms. The present invention provides a function for determining whether or not it is appropriate to create a model of a cross-sectional shape or a function for verifying the accuracy of estimation results to a conventional model based measurement method, wherein a solution space (expected solution space) is obtained by matching library waveforms and is displayed before measuring the real pattern by means of model based measurement. Moreover, after the real pattern is measured by means of model based measurement, the solution space (real solution space) is obtained by matching the real waveforms with the library waveforms and is displayed.

    摘要翻译: 基于模型的测量方法能够通过将各种预先创建的横截面形状与SEM信号波形的库进行匹配来估计横截面形状。 本发明提供一种功能,用于确定是否适于创建横截面形状的模型或用于验证估计结果的准确性的功能,以用于基于常规的基于模型的测量方法,其中,解空间(预期解空间 )通过匹配库波形获得,并且在通过基于模型的测量测量实际图案之前显示。 此外,在通过基于模型的测量来测量实际模式之后,通过将实际波形与库波形相匹配来获得解空间(实解空间),并显示。

    Scanning electron microscope system and method for measuring dimensions of patterns formed on semiconductor device by using the system
    16.
    发明授权
    Scanning electron microscope system and method for measuring dimensions of patterns formed on semiconductor device by using the system 有权
    扫描电子显微镜系统和通过使用该系统测量在半导体器件上形成的图案的尺寸的方法

    公开(公告)号:US08110800B2

    公开(公告)日:2012-02-07

    申请号:US12370870

    申请日:2009-02-13

    IPC分类号: H01J37/26

    CPC分类号: G03F1/84 G03F1/86 G03F7/70625

    摘要: The present invention is for providing a scanning electron microscope system adapted to output contour information fitting in with the real pattern edge end of a sample, and is arranged to generate a local projection waveform by projecting the scanning electron microscope image in the tangential direction with respect to the pattern edge at each point of the pattern edge of the scanning electron microscope image, estimate the cross-sectional shape of the pattern transferred on the sample by applying the local projection waveform generated at each point to a library, which has previously been created, correlating the cross-sectional shape with the electron beam signal waveform, obtain position coordinate of the edge end fitting in with the cross-sectional shape, and output the contour of the pattern as a range of position coordinates.

    摘要翻译: 本发明提供一种扫描电子显微镜系统,其适于输出与样品的实际图案边缘端相匹配的轮廓信息,并且被布置成通过相对于扫描电子显微镜图像沿切线方向投影而产生局部投影波形 到扫描电子显微镜图像的图案边缘的每个点处的图案边缘,通过将在每个点处生成的局部投影波形应用到先前已经创建的库来估计在样本上传送的图案的横截面形状 将横截面形状与电子束信号波形相关联,以横截面形状获得边缘端配件的位置坐标,并将图案的轮廓作为位置坐标的范围输出。

    Pattern Dimension Measurement Method Using Electron Microscope, Pattern Dimension Measurement System, and Method for Monitoring Changes in Electron Microscope Equipment Over Time
    17.
    发明申请
    Pattern Dimension Measurement Method Using Electron Microscope, Pattern Dimension Measurement System, and Method for Monitoring Changes in Electron Microscope Equipment Over Time 有权
    使用电子显微镜的图案尺寸测量方法,图案尺寸测量系统以及随时间监测电子显微镜设备变化的方法

    公开(公告)号:US20130166240A1

    公开(公告)日:2013-06-27

    申请号:US13807281

    申请日:2011-05-20

    IPC分类号: G01Q40/00

    摘要: Beforehand, the device characteristic patterns of each critical dimension SEM are measured, a sectional shape of an object to undergo dimension measurement is presumed by a model base library (MBL) matching system, dimension measurements are carried out by generating signal waveforms through SEM simulation by inputting the presumed sectional shapes and the device characteristic parameters, and differences in the dimension measurement results are registered as machine differences. In actual measurements, from the dimension measurement results in each critical dimension SEM, machine differences are corrected by subtracting the registered machine differences. Furthermore, changes in critical dimension SEM's over time are monitored by periodically measuring the above-mentioned device characteristic parameters and predicting the above-mentioned dimension measurement results. According to the present invention, actual measurements of machine differences, which require considerable time and effort, are unnecessary. In addition, the influence of changes in samples over time, which is problematic in monitoring changes in devices over time, can be eliminated.

    摘要翻译: 之前,测量每个临界尺寸SEM的器件特征图案,通过模型基本库(MBL)匹配系统推测进行尺寸测量的物体的截面形状,通过SEM模拟产生信号波形来进行尺寸测量 输入推定的截面形状和装置特性参数,将尺寸测量结果的差异作为机器差异进行登记。 在实际测量中,从每个临界尺寸SEM的尺寸测量结果可以看出,通过减去注册的机器差异来校正机器差异。 此外,通过周期性地测量上述器件特性参数并预测上述尺寸测量结果来监测临界尺寸SEM随时间变化的变化。 根据本发明,需要相当多的时间和精力的机器差异的实际测量是不必要的。 另外,随着时间的推移,随着时间的推移,随着时间的推移,随着时间的推移,样品随着时间变化的变化也受到影响。

    Defect inspection method and apparatus
    18.
    发明授权
    Defect inspection method and apparatus 有权
    缺陷检查方法和装置

    公开(公告)号:US07916929B2

    公开(公告)日:2011-03-29

    申请号:US12359452

    申请日:2009-01-26

    IPC分类号: G06K9/00

    摘要: A method of inspecting patterns, including: adjusting a brightness of at least one of a first bright field image and a second bright field image detected from a specimen and directed to similar patterns on differing parts of the specimen, so as to more closely match a brightness; comparing the images which are adjusted in brightness to match with each other to detect dissimilarities indicative of a defect of the pattern, wherein in adjusting the brightness, the brightness between the first bright field image and the second bright field image is adjusted by performing a gradation conversion of at least one of the brightness between the first bright field image and the second bright field image; and wherein in the comparing, said defect of the pattern is detected by using information of a scattered diagram of brightness of the first bright field image and the second bright field image.

    摘要翻译: 一种检查图案的方法,包括:调整从样本检测到的第一明视野图像和第二亮视场图像中的至少一个的亮度,并且针对样本的不同部分上的相似图案,以便更紧密地匹配 亮度; 将亮度调整后的图像进行比较以相互匹配,以检测表示图案缺陷的不相似性,其中在调整亮度时,通过执行渐变来调整第一亮场图像和第二亮视场图像之间的亮度 第一亮场图像和第二亮场图像之间的亮度中的至少一个的转换; 并且其中在所述比较中,通过使用所述第一亮场图像和所述第二亮视场图像的亮度的散射图的信息来检测所述图案的所述缺陷。

    Method and apparatus for measuring dimension using electron microscope
    20.
    发明授权
    Method and apparatus for measuring dimension using electron microscope 有权
    使用电子显微镜测量尺寸的方法和装置

    公开(公告)号:US07817860B2

    公开(公告)日:2010-10-19

    申请号:US12326544

    申请日:2008-12-02

    IPC分类号: G06K9/46 G06K9/00 G06K9/68

    CPC分类号: G06T7/74 G06T2207/30148

    摘要: Disclosed is a scanning electron microscope (SEM) for realizing high-precision dimension measurement of a sample, such as an ArF exposure photoresist, that requires the measurement of a dimension by a low S/N signal waveform. To this end, partial waveforms (or partial images) of sample signal waveforms (or an images) acquired from a dimension measurement target sample and a sample material of the same kind are registered in advance, a measurement target signal waveform (or an image) obtained from the dimension measurement target sample and the sample registration waveform are combined, and a dimension of the dimension measurement target pattern is calculated based on the combination result.

    摘要翻译: 公开了一种用于实现需要通过低S / N信号波形测量尺寸的样品(例如ArF曝光光致抗蚀剂)的高精度尺寸测量的扫描电子显微镜(SEM)。 为此,预先登记从维度测量目标样本和相同种类的样本材料获取的样本信号波形(或图像)的部分波形(或部分图像),测量目标信号波形(或图像) 从尺寸测量目标样本和样本登记波形中获得的尺寸测量目标图案的尺寸基于组合结果被计算。