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公开(公告)号:US07916513B2
公开(公告)日:2011-03-29
申请号:US12265418
申请日:2008-11-05
申请人: Shan Hu , Tong Zhao , Florin Zavaliche , Joachim Ahner , Stephen John Wrazien , Martin Gerard Forrester
发明人: Shan Hu , Tong Zhao , Florin Zavaliche , Joachim Ahner , Stephen John Wrazien , Martin Gerard Forrester
CPC分类号: G11C11/22 , B82Y10/00 , H01L27/11507 , H01L28/56
摘要: A data storage device comprising a ferroelectric layer, a perovskite structure, and at least one sensor, where the perovskite structure has a polarity discontinuity configured to generate capacitance voltages in the perovskite structure based on polarization charges of the ferroelectric material, and where the at least one sensor is configured to read the capacitance voltages from the perovskite structure.
摘要翻译: 一种包括铁电体层,钙钛矿结构和至少一个传感器的数据存储装置,其中钙钛矿结构具有极性不连续性,其被配置为基于铁电材料的极化电荷产生钙钛矿结构中的电容电压,并且其中至少 一个传感器被配置为从钙钛矿结构读取电容电压。
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公开(公告)号:US20100195369A1
公开(公告)日:2010-08-05
申请号:US12363062
申请日:2009-01-30
CPC分类号: G11C11/22
摘要: A data storage system comprises first and second storage layers, a reader and a writer. The first storage layer has a first coercive potential and a first polarization. The second storage layer has a second coercive potential that is less than the first coercive potential, and a second polarization that is coupled to the first polarization. The writer performs a write operation in which a write potential is imposed across the first and second storage layers, such that the first coercive potential is exceeded across the first storage layer and the second coercive potential is exceeded across the second storage layer. The reader performs a read operation in which a read potential is imposed across the first and second storage layers, such that the second coercive potential is exceeded across the second storage layer and the first coercive potential is not exceeded across the first storage layer.
摘要翻译: 数据存储系统包括第一和第二存储层,读取器和写入器。 第一存储层具有第一矫顽电位和第一极化。 第二存储层具有小于第一矫顽电位的第二矫顽电位和耦合到第一极化的第二极化。 写入器执行写入操作,其中在第一和第二存储层上施加写入电位,使得跨越第一存储层超过第一矫顽电位,并且超过第二存储层超过第二矫顽电位。 读取器执行其中在第一和第二存储层上施加读取电位的读取操作,使得跨越第二存储层超过第二矫顽电位,并且跨越第一存储层不超过第一矫顽电位。
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公开(公告)号:US20100110754A1
公开(公告)日:2010-05-06
申请号:US12265418
申请日:2008-11-05
申请人: Shan Hu , Tong Zhao , Florin Zavaliche , Joachim Ahner , Stephen John Wrazien , Martin Gerard Forrester
发明人: Shan Hu , Tong Zhao , Florin Zavaliche , Joachim Ahner , Stephen John Wrazien , Martin Gerard Forrester
IPC分类号: G11C11/22 , H01L27/115
CPC分类号: G11C11/22 , B82Y10/00 , H01L27/11507 , H01L28/56
摘要: A data storage device comprising a ferroelectric layer, a perovskite structure, and at least one sensor, where the perovskite structure has a polarity discontinuity configured to generate capacitance voltages in the perovskite structure based on polarization charges of the ferroelectric material, and where the at least one sensor is configured to read the capacitance voltages from the perovskite structure.
摘要翻译: 一种包括铁电体层,钙钛矿结构和至少一个传感器的数据存储装置,其中钙钛矿结构具有极性不连续性,其被配置为基于铁电材料的极化电荷产生钙钛矿结构中的电容电压,并且其中至少 一个传感器被配置为从钙钛矿结构读取电容电压。
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公开(公告)号:US20110038246A1
公开(公告)日:2011-02-17
申请号:US12539880
申请日:2009-08-12
IPC分类号: G11B9/00
CPC分类号: G11B9/02
摘要: The presently disclosed technology teaches an improved voltage pattern for conductive tips utilized as moveable top electrodes for writing data bits into ferroelectric media. A conductive tip is dragged in contact or near contact with a ferroelectric surface forming a moveable top electrode on a ferroelectric media disk. A metallic film is deposited onto a bottom-side of the ferroelectric media forming a conductive bottom electrode. Applying electrical voltage pulses between the conductive tip and the bottom electrode induces polarization switching of the ferroelectric media under the head. The improved voltage pattern incorporates positive and negative overshoot voltages to induce a polarization switch in the ferroelectric media and positive and negative drag voltages to expand a polarized region on the ferroelectric media. Potential benefits of the improved voltage pattern include reduced cross-track blooming and reduced along-track blooming resulting in a more uniform track width and bit series length.
摘要翻译: 目前公开的技术教导了用作用于将数据位写入铁电介质的可移动顶部电极的导电尖端的改进的电压图案。 导电尖端与形成铁电介质盘上的可移动顶部电极的铁电表面接触或接触接触。 金属膜沉积在形成导电底电极的铁电介质的底侧上。 在导电尖端和底部电极之间施加电压脉冲引起磁头下的铁电介质的极化转换。 改进的电压模式包括正和负的过冲电压以在铁电介质中引起偏振开关,以及正和负阻力电压以扩展铁电介质上的极化区域。 改进的电压模式的潜在优点包括减少的交叉轨迹开花和减少的沿轨道开度,导致更均匀的轨道宽度和位串联长度。
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公开(公告)号:US09021685B2
公开(公告)日:2015-05-05
申请号:US12075605
申请日:2008-03-12
申请人: Tong Zhao , Hui-Chuan Wang , Kunliang Zhang , Min Li
发明人: Tong Zhao , Hui-Chuan Wang , Kunliang Zhang , Min Li
CPC分类号: G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/098 , G11B5/3163 , G11B5/3906 , G11C11/16 , G11C11/161 , H01L43/12 , Y10T29/49034
摘要: An annealing process for a TMR or GMR sensor having an amorphous free layer is disclosed and employs at least two annealing steps. A first anneal at a temperature T1 of 200° C. to 270° C. and for a t1 of 0.5 to 15 hours is employed to develop the pinning in the AFM and pinned layers. A second anneal at a temperature T2 of 260° C. to 400° C. where T2>T1 and t1>t2 is used to crystallize the amorphous free layer and complete the pinning. An applied magnetic field of about 8000 Oe is used during both anneal steps. The mechanism for forming a sensor with high MR and robust pinning may involve structural change in the tunnel barrier or at an interface between two of the layers in the spin valve stack. A MgO tunnel barrier and a CoFe/CoB free layer are preferred.
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公开(公告)号:US08969135B2
公开(公告)日:2015-03-03
申请号:US14077174
申请日:2013-11-11
申请人: Peng Liu , Qingchun He , Zhaobin Qi , Liqiang Xu , Tong Zhao
发明人: Peng Liu , Qingchun He , Zhaobin Qi , Liqiang Xu , Tong Zhao
IPC分类号: H01L21/44 , H01L21/48 , H01L21/50 , H01L23/495 , H01L25/00
CPC分类号: H01L23/49575 , H01L23/49503 , H01L23/4952 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/73 , H01L25/50 , H01L2224/27013 , H01L2224/29101 , H01L2224/2919 , H01L2224/32245 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/73265 , H01L2224/78313 , H01L2924/0002 , H01L2924/19107 , H01L2924/00 , H01L2924/00014 , H01L2924/00012 , H01L2924/014
摘要: A semiconductor device includes a lead frame having a down bond area, a die attach area and a dam formed between the down bond area and the die attach area. A bottom of the dam is attached on a surface of the lead frame. The dam prevents contamination of the down bond area from die attach material, which may occur during a die attach process.
摘要翻译: 半导体器件包括具有下焊接区域的引线框架,管芯附着区域和形成在下焊接区域和管芯附着区域之间的坝。 大坝的底部附着在引线框架的表面上。 大坝可防止下模接合区域从芯片附着材料中的污染,这可能在芯片附着过程中发生。
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公开(公告)号:US20130116061A1
公开(公告)日:2013-05-09
申请号:US13698343
申请日:2011-05-16
申请人: Tong Zhao
发明人: Tong Zhao
IPC分类号: A63B69/36
CPC分类号: A63B69/36 , A63B15/00 , A63B24/0006 , A63B43/005 , A63B63/00 , A63B69/3632 , A63B69/3655 , A63B69/3661 , A63B71/04 , A63B71/0619 , A63B2209/08 , A63B2209/10 , A63B2210/50 , A63B2220/78 , A63B2220/806
摘要: A golf swing analysis kit including a first member that rests on the floor; a second member that is secured to a wall or otherwise securably hung or placed; a third member that can both rest on the first member or removably connect to the front side of the second member; a fourth member that projects the third member from a stationary position resting atop the first member to removably attach to the second member, and a method of analyzing consistency of the projected third member location and correlation to improve a golf swing.
摘要翻译: 高尔夫挥杆分析套件包括搁置在地板上的第一个构件; 固定在墙上或以其他方式牢固地悬挂或放置的第二个构件; 第三构件,其可以位于第一构件上,或者可拆卸地连接到第二构件的前侧; 第四构件,其将第三构件从保持在第一构件顶部的静止位置突出以可拆卸地附接到第二构件;以及分析投影的第三构件位置和相关性的一致性以改善高尔夫挥杆的方法。
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公开(公告)号:US20130005811A1
公开(公告)日:2013-01-03
申请号:US13510724
申请日:2011-03-09
申请人: Ronald Walcott , Michael Doyle , Tong Zhao
发明人: Ronald Walcott , Michael Doyle , Tong Zhao
CPC分类号: A01N37/42 , A23B9/20 , A23B9/26 , A23L3/3508 , A01N25/00 , A01N25/30 , A01N41/02 , A01N2300/00
摘要: The present disclosure encompasses embodiments of a method of reducing the microbial load of a vegetable seed or a sprout thereof, comprising contacting the vegetable seed or the sprout thereof, with a composition comprising levulinic acid and a detergent for a period suitable for reducing a bacterial population of the vegetable seed or the sprout thereof. In embodiments of the methods of the disclosure, the composition can reduce a bacterial population located on the exterior surface of the seed coat (testa) of a vegetable seed, located in or on the seed contents beneath the testa, or located on and beneath the testa of the vegetable seed.
摘要翻译: 本公开包括减少植物种子或其芽的微生物负荷的方法的实施方案,包括使蔬菜种子或其芽发酵与包含乙酰丙酸和洗涤剂的组合物接触适合于减少细菌群体的时间 的蔬菜种子或其芽。 在本公开的方法的实施方案中,组合物可以减少位于睾丸下面或位于睾丸下面或位于睾丸下面的种子内容物上的植物种子的种皮外层(睾丸)的外表面上的细菌群,或者位于 蔬菜种子的睾丸
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公开(公告)号:US20130001189A1
公开(公告)日:2013-01-03
申请号:US13561206
申请日:2012-07-30
申请人: Tong Zhao , Hui Chuan Wang , Min Li , Kunliang Zhang
发明人: Tong Zhao , Hui Chuan Wang , Min Li , Kunliang Zhang
IPC分类号: G11B5/33
CPC分类号: G11B5/3906 , G01R33/093 , G01R33/098 , G11B5/3163 , G11B2005/3996 , H01F10/3254 , H01F10/3272 , H01F41/303 , H01L43/08 , H01L43/10 , H01L43/12 , Y10T29/49034 , Y10T29/49052
摘要: A composite free layer having a FL1/insertion/FL2 configuration where a top surface of FL1 is treated with a weak plasma etch is disclosed for achieving enhanced dR/R while maintaining low RA, and low λ in TMR or GMR sensors. The weak plasma etch removes less than about 0.2 Angstroms of FL1 and is believed to modify surface structure and possibly increase surface energy. FL1 may be CoFe, CoFe/CoFeB, or alloys thereof having a (+) λ value. FL2 may be CoFe, NiFe, or alloys thereof having a (−) λ value. The thin insertion layer includes at least one magnetic element such as Co, Fe, and Ni, and at least one non-magnetic element. When CoFeBTa is selected as insertion layer, the CoFeB:Ta ratio is from 1:1 to 4:1.
摘要翻译: 公开了具有FL1 /插入/ FL2配置的复合自由层,其中用弱等离子体蚀刻处理FL1的顶表面,以实现增强的dR / R,同时保持低的RA和TMR或GMR传感器中的低λ。 弱等离子体蚀刻去除了小于约0.2埃的FL1,据信可以改变表面结构并可能增加表面能。 FL1可以是具有(+)λ值的CoFe,CoFe / CoFeB或其合金。 FL2可以是具有( - )λ值的CoFe,NiFe或其合金。 薄插入层包括至少一种诸如Co,Fe和Ni的磁性元件和至少一种非磁性元件。 当选择CoFeBTa作为插入层时,CoFeB:Ta的比例为1:1至4:1。
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公开(公告)号:US20120148716A1
公开(公告)日:2012-06-14
申请号:US13363455
申请日:2012-02-01
申请人: Michael P. Doyle , Tong Zhao
发明人: Michael P. Doyle , Tong Zhao
IPC分类号: A01N37/02 , A01P1/00 , A23B4/18 , A23L3/3454 , B65B55/00
CPC分类号: A23L3/3508 , A01N37/02 , A01N37/36 , A01N37/42 , A23L3/3463 , A01N25/04 , A01N2300/00 , A01N25/30 , A01N41/02
摘要: Antimicrobial compositions are provided comprising a pharmaceutically acceptable organic acid and a pharmaceutically acceptable surfactant. This synergistic combination allows compositions to be formulated at low concentrations that have efficacy in reducing bacterial counts by greater than 3 log within 5 minutes of contact while preserving the organoleptic properties of treated foods, including fresh produce. Also provided are methods for the use of the compositions to reduce the microbial load on the surfaces of foodstuffs, processed food products, and the hard surfaces of food preparation machinery, tools, benches, and the like.
摘要翻译: 提供了包含药学上可接受的有机酸和药学上可接受的表面活性剂的抗微生物组合物。 这种协同组合允许组合物以低浓度配制,其具有在接触5分钟内减少细菌计数大于3log的功效,同时保持经处理的食物(包括新鲜产品)的感官特性。 还提供了使用组合物减少食品,加工食品和食品制备机械,工具,长凳等的表面上的微生物负荷的方法。
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