摘要:
A process for forming a pattern comprising forming an alkali-soluble polymer layer on a substrate, forming a radiation-sensitive composition layer containing a diazonium salt on the alkali-soluble polymer layer to form a resist layer having a two-layer structure, exposing the resist layer to a radiation to cause the change in solubility in an aqueous alkaline solution at the boundary between the two layers and forming a predetermined pattern in the resist layer by a usual resist process. The resist layer may comprise a plurality of layers comprising the two-layer structure as a repeating unit structure.
摘要:
A photosensitive composition comprising an azide compound represented by the formula: ##STR1## wherein each of X and Y is an aromatic substituent group, at least one of X and Y being an aromatic substituent group having an azide group, and n and m are zeros or integers of 1, and a polymeric compound. Since this composition has high resolution and is photosensitive to light having a wavelength of 436 nm, it permits employment of a reduction projection printer and is suitable for fabrication of semiconductor devices.
摘要:
This invention relates to light sensitive photoresist materials which are used in the photo-engraving process or in the production of the phosphor screens of color picture tubes. The light sensitive photoresist materials of this invention are novel, water-soluble azide materials.
摘要:
A photosensitive resin composition comprising (A) an alkaline aqueous solution-soluble novolak resin, (B) a photosensitizer obtained by reacting a polyhydroxy compound with 1,2-naphthoquinone-(2)-diazido-5(or 4)-sulfonyl chloride, and (C) an ultraviolet absorber such as 2-(2'-hydroxy-5'-methylphenyl)-benzotriazole, has a strong absorption against a light of a wavelength of 365 nm and is suitable for producing semiconductor elements, etc.
摘要:
Disclosed is a radiation sensitive composition which comprises a radiation sensitive compound decreased in absorption of radiation upon irradiation with radiation and an organic polymer which, upon being formed into a film, changes in its solubility and decreases in solubility in a desired solvent due to the presence of decomposition product of said radiation sensitive compound which is produced by irradiation with the radiation. A process of formation of pattern using said composition is also disclosed. Fine resist pattern of 0.5 .mu.m line-and-space patterns or less can be formed with sufficiently high contrast.
摘要:
A thick polymer film containing an aromatic bisazide and/or an aromatic sulfonyl azide compound is formed on a substrate having topography level on its surface to flatten said surface and then heated or the whole surface thereof is exposed to a light. A mask pattern having a dry etching resistance higher than that of the polymer is formed on the polymer film, exposed parts of the polymer film are removed by the dry etching and the exposed parts of the film to be processed are removed to form a pattern.
摘要:
A photosensitive composition comprising an equimolar condensation product of an aromatic azide compound having an aldehyde group and isophorone, and an alkali-soluble polymeric compound is a negative-type photoresist with a high resolution suitable for the fabrication of semiconductor devices.