公开(公告)号：US20090004772A1

公开(公告)日：2009-01-01

申请号：US12019361

申请日：2008-01-24

申请人： Yasuhiro JINBO ,  Toshiyuki ISA ,  Tatsuya HONDA

发明人： Yasuhiro JINBO ,  Toshiyuki ISA ,  Tatsuya HONDA

IPC分类号： H01L51/40

CPC分类号： H01L21/02686 ,  H01L21/02532 ,  H01L21/02565 ,  H01L21/2026 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/1266 ,  H01L27/283 ,  H01L27/3258 ,  H01L27/3274 ,  H01L28/40 ,  H01L29/24 ,  H01L29/42356 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/495 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/7869 ,  H01L51/003 ,  H01L51/56 ,  H01L2227/323 ,  H01L2227/326 ,  H01L2251/5338

摘要： An object of the invention is to provide a method for manufacturing semiconductor devices that are flexible in which elements fabricated using a comparatively low-temperature (less than 500° C.) process are separated from a substrate. After a molybdenum film is formed over a glass substrate, a molybdenum oxide film is formed over the molybdenum film, a nonmetal inorganic film and an organic compound film are stacked over the molybdenum oxide film, and elements fabricated by a comparatively low-temperature (less than 500° C.) process are formed using existing manufacturing equipment for large glass substrates, the elements are separated from the glass substrate.

摘要翻译： 本发明的目的是提供一种制造半导体器件的方法，该半导体器件是柔性的，其中使用比较低温（小于500℃）的工艺制造的元件与衬底分离。 在玻璃基板上形成钼膜之后，在钼膜上形成氧化钼膜，在氧化钼膜上层叠非金属无机膜和有机化合物膜，通过比较低温（少于 使用现有的用于大玻璃基板的制造设备来形成工艺，元件与玻璃基板分离。

公开(公告)号：US20120061676A1

公开(公告)日：2012-03-15

申请号：US13226775

申请日：2011-09-07

申请人： Yuji EGI ,  Tetsuhiro TANAKA ,  Toshiyuki ISA ,  Hidekazu MIYAIRI ,  Koji DAIRIKI ,  Yoichi KUROSAWA ,  Kunihiko SUZUKI

发明人： Yuji EGI ,  Tetsuhiro TANAKA ,  Toshiyuki ISA ,  Hidekazu MIYAIRI ,  Koji DAIRIKI ,  Yoichi KUROSAWA ,  Kunihiko SUZUKI

IPC分类号： H01L29/04 ,  H01L29/786

CPC分类号： H01L29/78618 ,  H01L29/78648 ,  H01L29/78669 ,  H01L29/78678 ,  H01L29/78696

摘要： A highly reliable transistor in which change in electrical characteristics is suppressed is provided. A highly reliable transistor in which change in electrical characteristics is suppressed is manufactured with high productivity. A display device with less image deterioration over time is provided. An inverted staggered thin film transistor which includes, between a gate insulating film and impurity semiconductor films functioning as source and drain regions, a semiconductor stacked body including a microcrystalline semiconductor region and a pair of amorphous semiconductor regions. In the microcrystalline semiconductor region, the nitrogen concentration on the gate insulating film side is low and the nitrogen concentration in a region in contact with the amorphous semiconductor is high. Further, an interface with the amorphous semiconductor has unevenness.

摘要翻译： 提供了其中抑制电特性变化的高度可靠的晶体管。 以高生产率制造其中抑制电特性变化的高度可靠的晶体管。 提供了具有随时间图像劣化的显示装置。 一种倒置交错薄膜晶体管，其包括在栅极绝缘膜和用作源极和漏极区域的杂质半导体膜之间，包括微晶半导体区域和一对非晶半导体区域的半导体层叠体。 在微晶半导体区域中，栅绝缘膜侧的氮浓度低，与非晶半导体接触的区域的氮浓度高。 此外，与非晶半导体的界面具有不均匀性。

公开(公告)号：US20110248291A1

公开(公告)日：2011-10-13

申请号：US13164893

申请日：2011-06-21

申请人： Yasuhiro JINBO ,  Toshiyuki ISA ,  Tatsuya HONDA

发明人： Yasuhiro JINBO ,  Toshiyuki ISA ,  Tatsuya HONDA

IPC分类号： H01L33/60 ,  H01L33/08

CPC分类号： H01L21/02686 ,  H01L21/02532 ,  H01L21/02565 ,  H01L21/2026 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/1266 ,  H01L27/283 ,  H01L27/3258 ,  H01L27/3274 ,  H01L28/40 ,  H01L29/24 ,  H01L29/42356 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/495 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/7869 ,  H01L51/003 ,  H01L51/56 ,  H01L2227/323 ,  H01L2227/326 ,  H01L2251/5338

摘要： An object of the invention is to provide a method for manufacturing semiconductor devices that are flexible in which elements fabricated using a comparatively low-temperature (less than 500° C.) process are separated from a substrate. After a molybdenum film is formed over a glass substrate, a molybdenum oxide film is formed over the molybdenum film, a nonmetal inorganic film and an organic compound film are stacked over the molybdenum oxide film, and elements fabricated by a comparatively low-temperature (less than 500° C.) process are formed using existing manufacturing equipment for large glass substrates, the elements are separated from the glass substrate.

摘要翻译： 本发明的目的是提供一种制造半导体器件的方法，该半导体器件是柔性的，其中使用比较低温（小于500℃）的工艺制造的元件与衬底分离。 在玻璃基板上形成钼膜之后，在钼膜上形成氧化钼膜，在氧化钼膜上层叠非金属无机膜和有机化合物膜，通过比较低温（少于 使用现有的用于大玻璃基板的制造设备来形成工艺，元件与玻璃基板分离。

公开(公告)号：US20090321743A1

公开(公告)日：2009-12-31

申请号：US12490458

申请日：2009-06-24

申请人： Toshiyuki ISA ,  Yasuhiro JINBO ,  Sachiaki TEZUKA ,  Koji DAIRIKI ,  Hidekazu MIYAIRI ,  Shunpei YAMAZAKI

发明人： Toshiyuki ISA ,  Yasuhiro JINBO ,  Sachiaki TEZUKA ,  Koji DAIRIKI ,  Hidekazu MIYAIRI ,  Shunpei YAMAZAKI

IPC分类号： H01L29/786

CPC分类号： H01L27/1288 ,  H01L27/1214 ,  H01L29/04 ,  H01L29/66765 ,  H01L29/78696

摘要： A thin film transistor includes, as a buffer layer, an amorphous semiconductor layer having nitrogen or an NH group between a gate insulating layer and source and drain regions and at least on the source and drain regions side. As compared to a thin film transistor in which an amorphous semiconductor is included in a channel formation region, on-current of a thin film transistor can be increased. In addition, as compared to a thin film transistor in which a microcrystalline semiconductor is included in a channel formation region, off-current of a thin film transistor can be reduced.

摘要翻译： 薄膜晶体管包括作为缓冲层的至少在源极和漏极区域上具有氮或NH基的非晶半导体层，栅极绝缘层与源极和漏极区之间。 与在沟道形成区域中包含非晶半导体的薄膜晶体管相比，可以提高薄膜晶体管的导通电流。 此外，与在沟道形成区域中包含微晶半导体的薄膜晶体管相比，可以减小薄膜晶体管的截止电流。

公开(公告)号：US20120156835A1

公开(公告)日：2012-06-21

申请号：US13302176

申请日：2011-11-22

申请人： Toshiyuki ISA ,  Tomohiro KIMURA

发明人： Toshiyuki ISA ,  Tomohiro KIMURA

IPC分类号： H01L21/336 ,  H01L21/20

CPC分类号： H01L29/78696 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/02595 ,  H01L21/0262 ,  H01L21/32055 ,  H01L21/32137 ,  H01L29/04 ,  H01L29/66765

摘要： The amorphous silicon film is formed over the microcrystalline silicon film, and plasma treatment is performed on the amorphous silicon film in a mixed gas atmosphere of H2 and Ar at a pressure higher than 1000 Pa, so that etching is performed to expose the microcrystalline silicon film. In the etching, the etching rate of the amorphous silicon film and that of the microcrystalline silicon film is large.

摘要翻译： 在微晶硅膜上形成非晶硅膜，在H2和Ar的混合气体气氛中，在高于1000Pa的压力下，对非晶硅膜进行等离子体处理，进行蚀刻以使微晶硅膜露出 。 在蚀刻中，非晶硅膜和微晶硅膜的蚀刻速率大。

公开(公告)号：US20120033156A1

公开(公告)日：2012-02-09

申请号：US13198203

申请日：2011-08-04

申请人： Shunpei YAMAZAKI ,  Satoshi TORIUMI ,  Toshiyuki ISA

发明人： Shunpei YAMAZAKI ,  Satoshi TORIUMI ,  Toshiyuki ISA

IPC分类号： G02F1/1335

CPC分类号： G02F1/133555 ,  G02F1/133615 ,  G02F2001/133618 ,  G02F2201/58

摘要： A liquid crystal display device which includes a pair of substrates, a pixel including a liquid crystal element between the pair of substrates, a lighting portion provided on the outer side of the pair of substrates, a first polarizing member between the pair of substrates and the lighting portion, a reflective member provided outside the lightning portion, a second polarizing member on a side opposite to the first polarizing member with the pair of substrates provided therebetween, and a first optical sensor and a second optical sensor. The first optical sensor has a function of detecting illuminance of external light, and the second optical sensor has a function of detecting a color tone of polarized light emitted from the pixel portion. The lightning portion can emits light having a predetermined wavelength depending on the color tone of the pixel portion which is detected by the second optical sensor.

摘要翻译： 一种液晶显示装置，包括一对基板，在一对基板之间包括液晶元件的像素，设置在该对基板的外侧上的点亮部分，在该对基板之间的第一偏振构件和 照明部分，设置在闪电部分外部的反射构件，在与第一偏振构件相对的一侧上设置有一对基板的第二偏振构件，以及第一光学传感器和第二光学传感器。 第一光学传感器具有检测外部光的照度的功能，第二光学传感器具有检测从像素部发射的偏振光的色调的功能。 闪电部分可以发射具有预定波长的光，这取决于由第二光学传感器检测的像素部分的色调。

公开(公告)号：US20110204364A1

公开(公告)日：2011-08-25

申请号：US13020827

申请日：2011-02-04

申请人： Toshiyuki ISA

发明人： Toshiyuki ISA

IPC分类号： H01L29/786 ,  H01L21/336

CPC分类号： H01L29/78648 ,  H01L29/04 ,  H01L29/6675 ,  H01L29/66765 ,  H01L29/78618 ,  H01L29/78672 ,  H01L29/78678 ,  H01L29/78696

摘要： A method for manufacturing a thin film transistor having high electric characteristics with high productivity. In the method for forming a channel region of a dual-gate thin film transistor including a first gate electrode and a second gate electrode which faces the first gate electrode with the channel region provided therebetween, a first microcrystalline semiconductor film is formed under a first condition for forming a microcrystalline semiconductor film in which a space between crystal grains is filled with an amorphous semiconductor, and a second microcrystalline semiconductor film is formed over the first microcrystalline semiconductor film under a second condition for promoting crystal growth.

摘要翻译： 一种以高生产率制造具有高电特性的薄膜晶体管的方法。 在形成包括第一栅电极和第二栅极的双栅极薄膜晶体管的沟道区域的方法中，第一栅电极和第二栅极面对第一栅电极，沟道区域设置在其间，在第一条件下形成第一微晶半导体膜 用于形成其中晶粒之间的空间填充有非晶半导体的微晶半导体膜，并且在用于促进​​晶体生长的第二条件下在第一微晶半导体膜上形成第二微晶半导体膜。

公开(公告)号：US20100285624A1

公开(公告)日：2010-11-11

申请号：US12838115

申请日：2010-07-16

申请人： Satoshi KOBAYASHI ,  Ikuko KAWAMATA ,  Koji DAIRIKI ,  Shigeki KOMORI ,  Toshiyuki ISA ,  Shunpei YAMAZAKI

发明人： Satoshi KOBAYASHI ,  Ikuko KAWAMATA ,  Koji DAIRIKI ,  Shigeki KOMORI ,  Toshiyuki ISA ,  Shunpei YAMAZAKI

IPC分类号： H01L33/00

CPC分类号： H01L29/04 ,  H01L29/41733 ,  H01L29/4908 ,  H01L29/66765 ,  H01L29/78696

摘要： A display device including a thin film transistor with high electric characteristics and high reliability, and a method for manufacturing the display device with high mass-productivity. In a display device including an inverted-staggered channel-stop-type thin film transistor, the inverted-staggered channel-stop-type thin film transistor includes a microcrystalline semiconductor film including a channel formation region, and an impurity region containing an impurity element of one conductivity type is selectively provided in a region which is not overlapped with source and drain electrodes, in the channel formation region of the microcrystalline semiconductor film.

摘要翻译： 一种包括具有高电特性和高可靠性的薄膜晶体管的显示装置，以及具有高批量生产率的显示装置的制造方法。 在包括反交错通道停止型薄膜晶体管的显示装置中，反交错通道停止型薄膜晶体管包括包含沟道形成区的微晶半导体膜，以及含有杂质元素的杂质区 在微晶半导体膜的沟道形成区域中，在不与源极和漏极重叠的区域中选择性地提供一种导电型。

公开(公告)号：US20100096631A1

公开(公告)日：2010-04-22

申请号：US12423111

申请日：2009-04-14

申请人： Hidekazu MIYAIRI ,  Koji DAIRIKI ,  Yuji EGI ,  Yasuhiro JINBO ,  Toshiyuki ISA

发明人： Hidekazu MIYAIRI ,  Koji DAIRIKI ,  Yuji EGI ,  Yasuhiro JINBO ,  Toshiyuki ISA

IPC分类号： H01L29/786 ,  H01L21/336

CPC分类号： H01L27/1288 ,  H01L27/1214 ,  H01L29/04 ,  H01L29/41733 ,  H01L29/66765 ,  H01L29/78621 ,  H01L29/78669 ,  H01L29/78678 ,  H01L29/78696

摘要： A thin film transistor includes, over a substrate having an insulating surface, a gate insulating layer covering a gate electrode; a semiconductor layer which includes a plurality of crystalline regions in an amorphous structure and which forms a channel formation region, in contact with the gate insulating layer; a semiconductor layer including an impurity element imparting one conductivity type, which forms source and drain regions; and a buffer layer including an amorphous semiconductor between the semiconductor layer and the semiconductor layer including an impurity element imparting one conductivity type. The crystalline regions have an inverted conical or inverted pyramidal crystal particle which grows approximately radially in a direction in which the semiconductor layer is deposited, from a position away from an interface between the gate insulating layer and the semiconductor layer.

摘要翻译： 薄膜晶体管包括在具有绝缘表面的衬底上，覆盖栅电极的栅绝缘层; 半导体层，其包括与所述栅极绝缘层接触的非晶结构中的多个结晶区域，并形成沟道形成区域; 包含赋予一种导电类型的杂质元素的半导体层，其形成源区和漏区; 以及包括在半导体层和半导体层之间的非晶半导体的缓冲层，其包括赋予一种导电类型的杂质元素。 晶体区域具有从远离栅极绝缘层和半导体层之间的界面的位置沿着沉积半导体层的方向大致径向生长的倒锥形或倒棱锥晶体颗粒。

公开(公告)号：US20090061721A1

公开(公告)日：2009-03-05

申请号：US12197482

申请日：2008-08-25

申请人： Toshiyuki ISA

发明人： Toshiyuki ISA

IPC分类号： H01J9/24 ,  H01L21/30 ,  H01L51/40

CPC分类号： H01L27/1266 ,  H01L27/1214 ,  H01L27/1218

摘要： A method for manufacturing a semiconductor device having flexibility by separating an element that is manufactured by a comparatively low-temperature (temperature of less than 500° C.) process from a substrate is provided. The element is separated from a glass substrate by the following steps: forming a silicone layer over a glass substrate; performing plasma treatment to the surface of the silicone layer to weaken the surface of the silicone layer; stacking an organic compound layer over the silicone layer; and forming an element that is manufactured through a process at a comparatively low-temperature, typically, a temperature that the organic compound can withstand, over the compound layer.

摘要翻译： 提供一种通过将由相对较低温度（低于500℃的温度）制造的元件从基板分离的元件分离来制造具有柔性的半导体器件的方法。 通过以下步骤将元件与玻璃基板分离：在玻璃基板上形成硅树脂层; 对硅树脂层的表面进行等离子体处理以削弱硅树脂层的表面; 在有机硅层上层叠有机化合物层; 以及在化合物层上形成通过相对低温，通常为有机化合物可以承受的温度的方法制造的元件。