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104 条记录 (耗时 0.064 秒)

    LASER, PLASMA ETCH, AND BACKSIDE GRIND PROCESS FOR WAFER DICING
    13.
    发明申请
    LASER, PLASMA ETCH, AND BACKSIDE GRIND PROCESS FOR WAFER DICING 审中-公开
    激光，等离子体蚀刻和背面磨砂工艺

    公开(公告)号：US20140363952A1

    公开(公告)日：2014-12-11

    申请号：US14466671

    申请日：2014-08-22

    申请人： Wei-Sheng Lei ,  Brad Eaton ,  Madhava Rao Yalamanchili ,  Saravjeet Singh ,  Ajay Kumar

    发明人： Wei-Sheng Lei ,  Brad Eaton ,  Madhava Rao Yalamanchili ,  Saravjeet Singh ,  Ajay Kumar

    IPC分类号： H01L21/78 ,  H01L21/02 ,  H01L21/027

    CPC分类号： H01L21/78 ,  H01L21/02013 ,  H01L21/02016 ,  H01L21/02019 ,  H01L21/027 ,  Y10T29/5124

    摘要： Front side laser scribing and plasma etch are performed followed by back side grind to singulate integrated circuit chips (ICs). A mask is formed covering ICs formed on the wafer, as well as any bumps providing an interface to the ICs. The mask is patterned by laser scribing to provide a patterned mask with gaps. The patterning exposes regions of the semiconductor wafer, below thin film layers from which the ICs are formed. The semiconductor wafer is then etched through the gaps in the patterned mask to advance a front of an etched trench partially through the semiconductor wafer thickness. The front side mask is removed, a backside grind tape applied to the front side, and a back side grind performed to reach the etched trench, thereby singulating the ICs.

    摘要翻译： 执行前侧激光划线和等离子体蚀刻，然后进行背面研磨以分离集成电路芯片（IC）。 形成覆盖在晶片上形成的IC的掩模，以及提供与IC的接口的任何凸块。 通过激光划线将掩模图案化以提供具有间隙的图案化掩模。 图案化使得半导体晶片的区域在形成IC的薄膜层之下露出。 然后通过图案化掩模中的间隙蚀刻半导体晶片，以使蚀刻沟槽的前部部分地延伸穿过半导体晶片厚度。 去除前侧面罩，施加到前侧的背面研磨带，和进行到蚀刻沟槽的后侧研磨，由此分离IC。

    UNIFORM MASKING FOR WAFER DICING USING LASER AND PLASMA ETCH
    16.
    发明申请
    UNIFORM MASKING FOR WAFER DICING USING LASER AND PLASMA ETCH 有权
    使用激光和等离子体蚀刻的平面显示屏

    公开(公告)号：US20140017879A1

    公开(公告)日：2014-01-16

    申请号：US13917366

    申请日：2013-06-13

    申请人： Mohammad Kamruzzaman Chowdhury ,  Wei-Sheng Lei ,  Todd Egan ,  Brad Eaton ,  Madhava Rao Yalamanchili ,  Ajay Kumar

    发明人： Mohammad Kamruzzaman Chowdhury ,  Wei-Sheng Lei ,  Todd Egan ,  Brad Eaton ,  Madhava Rao Yalamanchili ,  Ajay Kumar

    IPC分类号： H01L21/78

    CPC分类号： H01L21/78

    摘要： Uniform masking for wafer dicing using laser and plasma etch is described. In an example, a method of dicing a semiconductor wafer having a plurality of integrated circuits having bumps or pillars includes uniformly spinning on a mask above the semiconductor wafer, the mask composed of a layer covering and protecting the integrated circuits. The mask is then patterned with a laser scribing process to provide a patterned mask with gaps, exposing regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is then etched through the gaps in the patterned mask to singulate the integrated circuits.

    摘要翻译： 描述了使用激光和等离子体蚀刻的用于晶片切割的均匀掩模。 在一个例子中，对具有多个具有凸起或柱状的集成电路的半导体晶片进行切割的方法包括在半导体晶片上方的掩模上均匀地旋转，该掩模由覆盖并保护集成电路的层组成。 然后用激光划线工艺对掩模进行构图，以提供具有间隙的图案化掩模，暴露集成电路之间的半导体晶片的区域。 然后通过图案化掩模中的间隙蚀刻半导体晶片，以对集成电路进行分离。