公开(公告)号：US09040955B2

公开(公告)日：2015-05-26

申请号：US13505226

申请日：2011-05-19

申请人： Kei Fujii ,  Katsushi Akita ,  Takashi Ishizuka ,  Hideaki Nakahata ,  Yasuhiro Iguchi ,  Hiroshi Inada ,  Youichi Nagai

发明人： Kei Fujii ,  Katsushi Akita ,  Takashi Ishizuka ,  Hideaki Nakahata ,  Yasuhiro Iguchi ,  Hiroshi Inada ,  Youichi Nagai

IPC分类号： H01L31/0352 ,  H01L31/105 ,  B82Y20/00

CPC分类号： H01L31/035236 ,  B82Y20/00 ,  H01L31/03046 ,  H01L31/105 ,  H01L31/1844

摘要： Provided are a semiconductor device and an optical sensor device, each having reduced dark current, and detectivity extended toward longer wavelengths in the near-infrared. Further, a method for manufacturing the semiconductor device is provided. The semiconductor device 50 includes an absorption layer 3 of a type II (GaAsSb/InGaAs) MQW structure located on an InP substrate 1, and an InP contact layer 5 located on the MQW structure. In the MQW structure, a composition x (%) of GaAsSb is not smaller than 44%, a thickness z (nm) thereof is not smaller than 3 nm, and z≧−0.4x+24.6 is satisfied.

摘要翻译： 提供了一种半导体器件和光学传感器装置，每个具有减小的暗电流，并且在近红外线中向较长波长延伸的检测能力。 此外，提供了一种用于制造半导体器件的方法。 半导体器件50包括位于InP衬底1上的II型（GaAsSb / InGaAs）MQW结构的吸收层3和位于MQW结构上的InP接触层5。 在MQW结构中，GaAsSb的组成x（％）不小于44％，其厚度z（nm）不小于3nm，并且z≥-0.4x + 24.6。

公开(公告)号：US08564666B2

公开(公告)日：2013-10-22

申请号：US13548668

申请日：2012-07-13

申请人： Youichi Nagai ,  Yasuhiro Iguchi

发明人： Youichi Nagai ,  Yasuhiro Iguchi

IPC分类号： H04N7/18

CPC分类号： B82Y20/00 ,  H01L27/14649 ,  H01L27/14694 ,  H01L31/035236

摘要： An image pickup device, a visibility support apparatus, a night vision device, a navigation support apparatus, and a monitoring device are provided in which noise and dark current are suppressed to thereby provide clear images regardless of whether it is day or night. The device includes a light-receiving layer 3 having a multi-quantum well structure and a diffusion concentration distribution control layer 4 disposed on the light-receiving layer so as to be opposite an InP substrate 1, wherein the light-receiving layer has a band gap wavelength of 1.65 to 3 μm, the diffusion concentration distribution control layer has a lower band gap energy than InP, a pn junction is formed for each light-receiving element by selective diffusion of an impurity element, and the impurity selectively diffused in the light-receiving layer has a concentration of 5×1016/cm3 or less. A diffusion concentration distribution control layer has an n-type impurity concentration of 2×1015/cm3 or less before the diffusion, the diffusion concentration distribution control layer having a portion adjacent to the light-receiving layer, the portion having a low impurity concentration. The concentration of the impurity element selectively diffused in the diffusion concentration distribution control layer is decreased to be 5×1016/cm3 or less toward the light-receiving layer.

摘要翻译： 提供了一种图像拾取装置，可视性支持装置，夜视装置，导航支持装置和监视装置，其中抑制噪声和暗电流，从而提供清晰的图像，而不管它是白天还是夜晚。 该装置包括具有多量子阱结构的光接收层3和设置在光接收层上以与InP衬底1相对的扩散浓度分布控制层4，其中光接收层具有带 间隙波长为1.65〜3μm，扩散浓度分布控制层具有比InP低的带隙能量，通过杂质元素的选择性扩散形成每个受光元件的pn结，并且杂质选择性地扩散到光 接收层的浓度为5×1016 / cm3以下。 扩散浓度分布控制层在扩散前具有2×1015 / cm3以下的n型杂质浓度，扩散浓度分布控制层具有与光接收层相邻的部分，该杂质浓度低的部分。 在扩散浓度分布控制层中选择性扩散的杂质元素的浓度降低到光接收层的5×1016 / cm3以下。

公开(公告)号：US20120223290A1

公开(公告)日：2012-09-06

申请号：US13451031

申请日：2012-04-19

申请人： Yasuhiro Iguchi ,  Kohei Miura ,  Hiroshi Inada ,  Youichi Nagai

发明人： Yasuhiro Iguchi ,  Kohei Miura ,  Hiroshi Inada ,  Youichi Nagai

IPC分类号： H01L31/0352 ,  H01L31/18

CPC分类号： H01L31/035236 ,  B82Y20/00 ,  H01L21/02392 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02507 ,  H01L21/02546 ,  H01L21/02549 ,  H01L21/0262 ,  H01L21/02631 ,  H01L27/14683 ,  H01L31/03046 ,  H01L31/102 ,  H01L31/1844 ,  Y02E10/544 ,  Y02P70/521

摘要： A light-receiving element includes a group III-V compound semiconductor stacked structure that includes an absorption layer having a pn-junction therein. The stacked structure is formed on a group III-V compound semiconductor substrate. The absorption layer has a multi- quantum well structure composed of group III-V compound semiconductors, and the pn-junction is formed by selectively diffusing an impurity element into the absorption layer. A diffusion concentration distribution control layer composed of a III-V group semiconductor is disposed in contact with the absorption layer on a side of the absorption layer opposite the side adjacent to the group III-V compound semiconductor substrate. The bandgap energy of the diffusion concentration distribution control layer is smaller than that of the group III-V compound semiconductor substrate. The concentration of the impurity element selectively diffused in the diffusion concentration distribution control layer is 5×1016/cm3 or less toward the absorption layer.

摘要翻译： 光接收元件包括III-V族化合物半导体层叠结构，其包括其中具有pn结的吸收层。 叠层结构形成在III-V族化合物半导体衬底上。 吸收层具有由III-V族化合物半导体组成的多量子阱结构，并且通过选择性地将杂质元素扩散到吸收层中而形成pn结。 由III-V族半导体构成的扩散浓度分布控制层设置成与吸收层的与III-V族化合物半导体衬底相邻的一侧相反侧的吸收层接触。 扩散浓度分布控制层的带隙能量小于III-V族化合物半导体衬底的带隙能量。 在扩散浓度分布控制层中选择性扩散的杂质元素的浓度朝向吸收层为5×1016 / cm3以下。

公开(公告)号：US20100327386A1

公开(公告)日：2010-12-30

申请号：US12494393

申请日：2009-06-30

申请人： Youichi Nagai ,  Yasuhiro Iguchi

发明人： Youichi Nagai ,  Yasuhiro Iguchi

IPC分类号： H01L27/146 ,  H01L31/0216 ,  H01L31/18

CPC分类号： H01L27/14689 ,  H01L27/1446 ,  H01L27/14609 ,  H01L27/1463 ,  H01L27/14643

摘要： A photodiode array includes a substrate of a common read-out control circuit; and a plurality of photodiodes arrayed on the substrate and each including an absorption layer, and a pair of a first conductive-side electrode and a second conductive-side electrode. In this photodiode array, each of the photodiodes is isolated from adjacent photodiodes, the first conductive-side electrodes are provided on first conductivity-type regions and electrically connected in common across all the photodiodes, and the second conductive-side electrodes are provided on second conductivity-type regions and individually electrically connected to read-out electrodes of the read-out control circuit.

摘要翻译： 光电二极管阵列包括公共读出控制电路的基板; 以及排列在基板上并且各自包括吸收层的多个光电二极管，以及一对第一导电侧电极和第二导电侧电极。 在该光电二极管阵列中，每个光电二极管与相邻的光电二极管隔离，第一导电侧电极设置在第一导电型区域上，并且在所有光电二极管上共同电连接，第二导电侧电极设置在第二导电型电极上 导电型区域，并且分别电连接到读出控制电路的读出电极。

公开(公告)号：US20100051905A1

公开(公告)日：2010-03-04

申请号：US12508008

申请日：2009-07-23

申请人： Yasuhiro Iguchi ,  Youichi Nagai

发明人： Yasuhiro Iguchi ,  Youichi Nagai

IPC分类号： H01L29/06 ,  H01L31/00

CPC分类号： H01L31/035236 ,  B82Y20/00 ,  H01L31/03042 ,  H01L31/03046 ,  Y02E10/544

摘要： A moisture detector includes a light-receiving element including an absorption layer having a pn-junction, or an array of the light-receiving elements, wherein the absorption layer has a multiquantum well structure composed of a Group III-V semiconductor, the pn-junction is formed by selectively diffusing an impurity element into the absorption layer, and the concentration of the impurity in the absorption layer is 5×1016/cm3 or less. The moisture detector receives light having at least one wavelength included in an absorption band of water lying in a wavelength range of 3 μm or less, thereby detecting moisture.

摘要翻译： 水分检测器包括具有pn结的吸收层或受光元件的阵列的光接收元件，其中吸收层具有由III-V族半导体组成的多量子阱结构，pn- 通过选择性地将杂质元素扩散到吸收层中而形成结，并且吸收层中的杂质浓度为5×1016 / cm3以下。 水分检测器接收具有在3μm以下的波长范围内的水的吸收带中包含的至少一个波长的光，从而检测水分。

公开(公告)号：US20070264835A1

公开(公告)日：2007-11-15

申请号：US11741226

申请日：2007-04-27

申请人： Yasuhiro Iguchi ,  Hiroshi Inada ,  Youichi Nagai

发明人： Yasuhiro Iguchi ,  Hiroshi Inada ,  Youichi Nagai

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： H01L27/1446 ,  H01L31/1035 ,  H01L31/1844 ,  Y02E10/544 ,  Y02P70/521

摘要： A photodiode array for near infrared rays that includes photodiodes having a uniform size and a uniform shape, has high selectivity for the wavelength of received light between the photodiodes, and has high sensitivity with the aid of a high-quality semiconducting crystal containing a large amount of nitrogen, a method for manufacturing the photodiode array, and an optical measurement system are provided. The steps of forming a mask layer 2 having a plurality of openings on a first-conductive-type or semi-insulating semiconductor substrate 1, the openings being arranged in one dimension or two dimensions, and selectively growing a plurality of semiconductor layers 3a, 3b, and 3c including an absorption layer 3b in the openings are included.

摘要翻译： 包括具有均匀尺寸和均匀形状的光电二极管的近红外线光电二极管阵列对于光电二极管之间的接收光的波长具有高选择性，并且借助于含有大量的高质量半导体晶体具有高灵敏度 的氮，制造光电二极管阵列的方法和光学测量系统。 在第一导电型或半绝缘半导体衬底1上形成具有多个开口的掩模层2的步骤，所述开口一维或二维地布置，并且选择性地生长多个半导体层3a， 包括在开口中包括吸收层3b的3b和3c。

公开(公告)号：US08969851B2

公开(公告)日：2015-03-03

申请号：US12965660

申请日：2010-12-10

申请人： Hiroshi Inada ,  Yasuhiro Iguchi ,  Youichi Nagai ,  Hiroki Mori ,  Kouhei Miura

发明人： Hiroshi Inada ,  Yasuhiro Iguchi ,  Youichi Nagai ,  Hiroki Mori ,  Kouhei Miura

IPC分类号： H01L29/06 ,  H01L27/146

CPC分类号： H01L27/14636 ,  H01L27/14618 ,  H01L27/14634 ,  H01L27/1469 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/00014

摘要： The present invention provides an image pickup device used to capture an image of an object by receiving light in a near infrared region reflected from the object. The image pickup device includes semiconductor light-receiving elements each having a light-receiving layer with a band gap wavelength of 1.65 to 3.0 μm.

摘要翻译： 本发明提供了一种用于通过在从物体反射的近红外区域中接收光来捕获对象的图像的图像拾取装置。 图像拾取装置包括各自具有带隙波长为1.65至3.0μm的光接收层的半导体光接收元件。

公开(公告)号：US08822977B2

公开(公告)日：2014-09-02

申请号：US13806585

申请日：2011-06-15

申请人： Katsushi Akita ,  Takashi Ishizuka ,  Kei Fujii ,  Hideaki Nakahata ,  Youichi Nagai ,  Hiroshi Inada ,  Yasuhiro Iguchi

发明人： Katsushi Akita ,  Takashi Ishizuka ,  Kei Fujii ,  Hideaki Nakahata ,  Youichi Nagai ,  Hiroshi Inada ,  Yasuhiro Iguchi

IPC分类号： H01L29/06 ,  H01L31/18 ,  H01L31/0352 ,  H01L31/0304 ,  B82Y20/00

CPC分类号： H01L31/035236 ,  B82Y20/00 ,  H01L31/03046 ,  H01L31/18 ,  H01L31/1844 ,  Y02E10/544

摘要： A photodetector and a method of manufacturing the photodetector are provided, in which variation in sensitivity is suppressed over the near-infrared region from the short wavelength side including 1.3 μm to the long wavelength side. The photodetector includes, on an InP substrate, an absorption layer of a type II multiple quantum well structure comprising a repeated structure of a GaAsSb layer and an InGaAs layer, and has sensitivity in the near-infrared region including wavelengths of 1.3 μm and 2.0 μm. The ratio of the sensitivity at the wavelength of 1.3 μm to the sensitivity at the wavelength of 2.0 μm is not smaller than 0.5 but not larger than 1.6.

摘要翻译： 提供了一种光电检测器和制造该光检测器的方法，其中从包括1.3μm到长波长侧的短波长侧的近红外区域抑制了灵敏度的变化。 光检测器在InP衬底上包括II型多量子阱结构的吸收层，其包括GaAsSb层和InGaAs层的重复结构，并且在包括1.3μm和2.0μm的波长的近红外区域中具有灵敏度 。 在1.3μm波长下的灵敏度与2.0μm波长下的灵敏度之比不小于0.5但不大于1.6。

公开(公告)号：US20130313521A1

公开(公告)日：2013-11-28

申请号：US14000187

申请日：2012-02-03

申请人： Katsushi Akita ,  Takashi Ishizuka ,  Kei Fujii ,  Youichi Nagai ,  Hiroshi Inada ,  Yasuhiro Iguchi

发明人： Katsushi Akita ,  Takashi Ishizuka ,  Kei Fujii ,  Youichi Nagai ,  Hiroshi Inada ,  Yasuhiro Iguchi

IPC分类号： H01L31/0352

CPC分类号： H01L31/035209 ,  B82Y20/00 ,  C30B25/183 ,  C30B29/40 ,  C30B29/42 ,  C30B29/68 ,  H01L31/035236 ,  H01L31/109 ,  H01L31/1844 ,  Y02E10/544 ,  Y02P70/521

摘要： An object of the present invention is to provide, for example, a photodiode that can have sufficiently high sensitivity in a near-infrared wavelength range of 1.5 μm to 1.8 μm and can have a low dark current. A photodiode (10) according to the present invention includes a buffer layer (2) positioned on and in contact with an InP substrate (1), and an absorption layer (3) positioned on and in contact with the buffer layer, wherein the absorption layer includes 50 or more pairs in which a first semiconductor layer 3a and a second semiconductor layer 3b constitute a single pair, the first semiconductor layer 3a having a bandgap energy of 0.73 eV or less, the second semiconductor layer 3b having a larger bandgap energy than the first semiconductor layer 3a, and the first semiconductor layer 3a and the second semiconductor layer 3b constitute a strain-compensated quantum well structure and each have a thickness of 1 nm or more and 10 nm or less.

摘要翻译： 本发明的一个目的是提供例如在1.5μm至1.8μm的近红外波长范围内具有足够高灵敏度的光电二极管，并且可以具有低暗电流。 根据本发明的光电二极管（10）包括位于InP衬底（1）上并与InP衬底（1）接触的缓冲层（2）和位于缓冲层上并与缓冲层接触的吸收层（3），其中吸收 层包括50个或更多对，其中第一半导体层3a和第二半导体层3b构成单对，第一半导体层3a的带隙能为0.73eV以下，第二半导体层3b的带隙能量比 第一半导体层3a，第一半导体层3a和第二半导体层3b构成应变补偿量子阱结构，并且各自具有1nm以上且10nm以下的厚度。

公开(公告)号：US20130048838A1

公开(公告)日：2013-02-28

申请号：US13640922

申请日：2010-12-03

申请人： Hiroki Mori ,  Yasuhiro Iguchi ,  Hiroshi Inada ,  Youichi Nagai ,  Kouhei Miura ,  Hideaki Nakahata ,  Katsushi Akita ,  Takashi Ishizuka ,  Kei Fujii

发明人： Hiroki Mori ,  Yasuhiro Iguchi ,  Hiroshi Inada ,  Youichi Nagai ,  Kouhei Miura ,  Hideaki Nakahata ,  Katsushi Akita ,  Takashi Ishizuka ,  Kei Fujii

IPC分类号： H01L31/101 ,  H01L31/18 ,  H01L33/06

CPC分类号： H01L31/03046 ,  B82Y20/00 ,  H01L27/1446 ,  H01L27/1467 ,  H01L31/035236 ,  Y02E10/544 ,  Y02P70/521

摘要： A light-receiving element includes an InP substrate 1, a light-receiving layer 3 having an MQW and located on the InP substrate 1, a contact layer 5 located on the light-receiving layer 3, a p-type region 6 extending from a surface of the contact layer 5 to the light-receiving layer, and a p-side electrode 11 that forms an ohmic contact with the p-type region. The light-receiving element is characterized in that the MQW has a laminated structure including pairs of an InxGa1-xAs (0.38≦x≦0.68) layer and a GaAs1-ySby (0.25≦y≦0.73) layer, and in the GaAs1-ySby layer, the Sb content y in a portion on the InP substrate side is larger than the Sb content y in a portion on the opposite side.

摘要翻译： 光接收元件包括InP衬底1，具有MQW且位于InP衬底1上的光接收层3，位于光接收层3上的接触层5，从 接触层5的表面与光接收层和与p型区域形成欧姆接触的p侧电极11。 光接收元件的特征在于MQW具有包括In x Ga 1-x As（0.38和nlE; x＆lt; lE; 0.68）层和GaAs1-ySby（0.25＆amp; nlE; y＆nlE; 0.73）层的层的叠层结构，并且在GaAs1 -ySby层，InP衬底侧的部分中的Sb含量y大于相对侧的部分中的Sb含量y。