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105 条记录 (耗时 0.032 秒)

    Nitride-based semiconductor laser device
    11.
    发明申请
    Nitride-based semiconductor laser device 审中-公开
    基于氮化物的半导体激光器件

    公开(公告)号：US20090010292A1

    公开(公告)日：2009-01-08

    申请号：US12213914

    申请日：2008-06-26

    申请人： Yasuhiko Nomura ,  Takashi Kano

    发明人： Yasuhiko Nomura ,  Takashi Kano

    IPC分类号： H01S5/34

    CPC分类号： B82Y20/00 ,  H01S5/2009 ,  H01S5/34333 ,  H01S2301/173 ,  H01S2301/18

    摘要： A nitride-based semiconductor laser device capable of elongating the life thereof is obtained. This nitride-based semiconductor laser device comprises a first cladding layer consisting of a first conductivity type nitride-based semiconductor, an emission layer, formed on the first cladding layer, consisting of a nitride-based semiconductor and a second cladding layer, formed on the emission layer, consisting of a second conductivity type nitride-based semiconductor, while the emission layer includes an active layer emitting light, a light guiding layer for confining light and a carrier blocking layer, arranged between the active layer and the light guiding layer, having a larger band gap than the light guiding layer.

    摘要翻译： 获得能够延长寿命的氮化物系半导体激光装置。 该氮化物系半导体激光装置包括由第一导电型氮化物系半导体构成的第一包层，形成在第一包层上的由氮化物系半导体和第二包层构成的发光层， 发射层，由第二导电型氮化物基半导体组成，而发射层包括发射光的有源层，用于限制光的导光层和布置在有源层和导光层之间的载流子阻挡层，具有 比导光层更大的带隙。

    Nitride-based semiconductor light-emitting device and method of fabricating the same
    12.
    发明授权
    Nitride-based semiconductor light-emitting device and method of fabricating the same 有权
    氮化物系半导体发光元件及其制造方法

    公开(公告)号：US07450622B2

    公开(公告)日：2008-11-11

    申请号：US11723846

    申请日：2007-03-22

    申请人： Masayuki Hata ,  Yasuhiko Nomura ,  Daijiro Inoue

    发明人： Masayuki Hata ,  Yasuhiko Nomura ,  Daijiro Inoue

    IPC分类号： H01S5/00

    CPC分类号： H01L33/145 ,  B82Y20/00 ,  H01L33/32 ,  H01S5/0213 ,  H01S5/0422 ,  H01S5/0425 ,  H01S5/2022 ,  H01S5/204 ,  H01S5/2205 ,  H01S5/2206 ,  H01S5/2216 ,  H01S5/2219 ,  H01S5/2224 ,  H01S5/2226 ,  H01S5/2231 ,  H01S5/3063 ,  H01S5/3213 ,  H01S5/32341 ,  H01S5/34333 ,  H01S2301/173 ,  H01S2301/18 ,  H01S2304/04

    摘要： A nitride-based semiconductor light-emitting device capable of stabilizing transverse light confinement is obtained. This nitride-based semiconductor light-emitting device comprises an emission layer, a cladding layer, formed on the emission layer, including a first nitride-based semiconductor layer and having a current path portion and a current blocking layer, formed to cover the side surfaces of the current path portion, including a second nitride-based semiconductor layer, while the current blocking layer is formed in the vicinity of the current path portion and a region having no current blocking layer is included in a region not in the vicinity of the current path portion. Thus, the width of the current blocking layer is reduced, whereby strain applied to the current blocking layer is relaxed. Consequently, the thickness of the current blocking layer can be increased, thereby stabilizing transverse light confinement.

    摘要翻译： 获得能够稳定横向光束缚的氮化物系半导体发光元件。 该氮化物系半导体发光元件具有形成在发光层上的发光层，包层，具有第一氮化物系半导体层，具有电流通路部和电流阻挡层，形成为覆盖侧面 的电流路径部分，包括第二氮化物基半导体层，而电流阻挡层形成在电流路径部分附近，并且没有电流阻挡层的区域包括在不在电流附近的区域中 路径部分。 因此，电流阻挡层的宽度减小，由此施加到电流阻挡层的应变松弛。 因此，可以提高电流阻挡层的厚度，从而稳定横向光的限制。

    Nitride-based semiconductor laser device
    17.
    发明申请
    Nitride-based semiconductor laser device 失效

    公开(公告)号：US20050224835A1

    公开(公告)日：2005-10-13

    申请号：US11147334

    申请日：2005-06-08

    申请人： Yasuhiko Nomura ,  Takashi Kano

    发明人： Yasuhiko Nomura ,  Takashi Kano

    IPC分类号： H01S5/20 ,  H01S5/343 ,  H01L33/00

    CPC分类号： B82Y20/00 ,  H01S5/2009 ,  H01S5/34333 ,  H01S2301/173 ,  H01S2301/18

    摘要： A nitride-based semiconductor laser device capable of elongating the life thereof is obtained. This nitride-based semiconductor laser device comprises a first cladding layer consisting of a first conductivity type nitride-based semiconductor, an emission layer, formed on the first cladding layer, consisting of a nitride-based semiconductor and a second cladding layer, formed on the emission layer, consisting of a second conductivity type nitride-based semiconductor, while the emission layer includes an active layer emitting light, a light guiding layer for confining light and a carrier blocking layer, arranged between the active layer and the light guiding layer, having a larger band gap than the light guiding layer.

    Nitride-based semiconductor laser device and method of forming the same
    18.
    发明授权
    Nitride-based semiconductor laser device and method of forming the same 失效
    基于氮化物的半导体激光器件及其形成方法

    公开(公告)号：US06743702B2

    公开(公告)日：2004-06-01

    申请号：US10058378

    申请日：2002-01-30

    申请人： Takenori Goto ,  Yasuhiko Nomura ,  Tsutomu Yamaguchi ,  Kiyoshi Oota

    发明人： Takenori Goto ,  Yasuhiko Nomura ,  Tsutomu Yamaguchi ,  Kiyoshi Oota

    IPC分类号： H01L21265

    CPC分类号： H01S5/0425 ,  H01L21/28575 ,  H01S5/32341

    摘要： A highly reliable semiconductor laser device having a low operating voltage is obtained by increasing adhesive force of the overall electrode layer to a nitride-based semiconductor layer without deteriorating a low contact property. This nitride-based semiconductor laser device comprises a nitride-based semiconductor layer formed on an active layer and an electrode layer formed on the nitride-based semiconductor layer, while the electrode layer includes a first electrode layer containing a material having strong adhesive force to the nitride-based semiconductor layer and a second electrode layer, formed on the first electrode layer, having weaker adhesive force to the nitride-based semiconductor layer than the first electrode layer for reducing contact resistance of the electrode layer with respect to the nitride-based semiconductor layer. Thus, the adhesive force of the overall electrode layer to the nitride-based semiconductor layer is increased due to the first electrode layer, and lower contact resistance is attained due to the second electrode layer. Therefore, the device can be improved in reliability and reduced in operating voltage.

    摘要翻译： 通过增加整个电极层对氮化物基半导体层的粘合力而不降低接触性能，可获得具有低工作电压的高度可靠的半导体激光器件。 该氮化物系半导体激光装置包括在有源层上形成的氮化物系半导体层和形成在氮化物系半导体层上的电极层，而电极层包括第一电极层，该第一电极层含有对 氮化物基半导体层和第二电极层，形成在第一电极层上，与用于降低电极层相对于氮化物基半导体的接触电阻的第一电极层相比，对氮化物基半导体层具有较弱的粘附力 层。 因此，由于第一电极层，整个电极层对氮化物基半导体层的粘附力增加，并且由于第二电极层而获得较低的接触电阻。 因此，可以提高器件的可靠性和降低工作电压。

    SEMICONDUCTOR LASER DEVICE AND METHOD OF MANUFACTURING THE SAME
    19.
    发明申请
    SEMICONDUCTOR LASER DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
    半导体激光器件及其制造方法

    公开(公告)号：US20090262771A1

    公开(公告)日：2009-10-22

    申请号：US12090334

    申请日：2007-07-31

    申请人： Daijiro Inoue ,  Yasuyuki Bessho ,  Masayuki Hata ,  Yasuhiko Nomura ,  Seiichi Tokunaga

    发明人： Daijiro Inoue ,  Yasuyuki Bessho ,  Masayuki Hata ,  Yasuhiko Nomura ,  Seiichi Tokunaga

    IPC分类号： H01S5/026 ,  H01L21/00

    CPC分类号： H01S5/0425 ,  B82Y20/00 ,  H01S5/0202 ,  H01S5/0207 ,  H01S5/22 ,  H01S5/2201 ,  H01S5/2214 ,  H01S5/34333 ,  H01S2304/04

    摘要： A semiconductor laser device capable of suppressing damage of a waveguide is obtained. This GaN-based semiconductor laser chip (semiconductor laser device) includes an n-type GaN substrate of a nitride-based semiconductor and a semiconductor layer of a nitride-based semiconductor formed on the n-type GaN substrate and provided with a ridge portion constituting a waveguide extending in a direction F. The ridge portion (waveguide) is formed on a region approaching a first side from the center of the semiconductor layer. On a region opposite to the first side of the ridge portion (waveguide), a cleavage introduction step is formed from the side of the semiconductor layer, to extend in a direction intersecting with the extensional direction F of the ridge portion (waveguide).

    摘要翻译： 可以获得能够抑制波导损伤的半导体激光装置。 这种GaN基半导体激光器芯片（半导体激光器件）包括氮化物基半导体的n型GaN衬底和形成在n型GaN衬底上的氮化物基半导体的半导体层，并且具有构成 沿方向F延伸的波导。脊部（波导）形成在从半导体层的中心接近第一侧的区域上。 在与脊部（波导）的第一侧相对的区域上，从半导体层的侧面开始，在与脊部（波导管）的延伸方向F相交的方向上延伸。

    NITRIDE-BASED SEMICONDUCTOR LASER DEVICE AND METHOD OF MANUFACTURING THE SAME
    20.
    发明申请
    NITRIDE-BASED SEMICONDUCTOR LASER DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
    基于氮化物的半导体激光器件及其制造方法

    公开(公告)号：US20090052489A1

    公开(公告)日：2009-02-26

    申请号：US12130551

    申请日：2008-05-30

    申请人： Yasuhiko Nomura

    发明人： Yasuhiko Nomura

    IPC分类号： H01S5/323 ,  H01L33/00

    CPC分类号： H01S5/32341 ,  H01S5/0202 ,  H01S5/0287 ,  H01S5/2231 ,  H01S5/3202

    摘要： A nitride-based semiconductor laser device includes a front facet located on a forward end of an optical waveguide and formed by a substantially (000-1) plane of a nitride-based semiconductor layer and a rear facet located on a rear end of the optical waveguide and formed by a substantially (0001) plane of the nitride-based semiconductor layer, wherein an intensity of a laser beam emitted from the front facet is rendered larger than an intensity of a laser beam emitted from the rear facet.

    摘要翻译： 一种氮化物基半导体激光器件包括位于光波导的前端并由氮化物基半导体层的大致（000-1）面和位于光学器件的后端的后面形成的前刻面 波导，并由氮化物基半导体层的基本（0001）面形成，其中从前刻面发射的激光束的强度大于从后面发射的激光束的强度。