摘要:
A novel field-effect transistor is provided which employs an amorphous oxide. In an embodiment of the present invention, the transistor comprises an amorphous oxide layer containing electron carrier at a concentration less than 1×10−18/cm3, and the gate-insulating layer is comprised of a first layer being in contact with the amorphous oxide and a second layer different from the first layer.
摘要:
A sputtering target is provided that has a relative density of 80% or more and contains a compound having as its principal component zinc oxide satisfying AXBYO(KaX+KbY)/2(ZnO)m, 1
摘要:
Provided is a sputtering target having a relative density of 80% or more and containing a compound having as its principal component zinc oxide satisfying AXBYO(KaX+KbY)/2(ZnO)m, 1
摘要:
In an electride C12A7 provided by replacing free oxygen in 12CaO.7Al2O3 with electrons, a material having metallic electroconductivity and an electric conductivity of more than 5×102 S/cm at room temperature could not have been produced without difficulties.An electride 12CaO.7Al2O3, which has metallic electroconductivity and has an electric conductivity of more than 5×102 S/cm at room temperature, can be produced by heat-treating titanium metal vapor and 12CaO.7Al2O3 single crystal, sinter, or thin film at a temperature above 600° C. and below 1,450° C. for less than 240 hours. Further, thermoelectric field electron release can also be realized using an electron release chip fabricated from the electride.
摘要:
A sensor for detecting a received electromagnetic wave comprising a first electrode, a second electrode and an amorphous oxide layer interposed between the first electrode and the second electrode.
摘要:
A magnetic semiconductor material contains at least one type of transition metals (Mn2+, Fe3+, Ru3+, Re2+, and Os3+) having five electrons in the d atomic orbital as a magnetic ion, in which the magnetic semiconductor material exhibits n-type electrical conduction by injection of an electron carrier and p-type electric conduction by injection of a hole carrier. A specific example is a layered oxy-pnictide compound represented by LnMnOPn (wherein Ln is at least one type selected from Y and rare earth elements of La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu, and Pn is at least one selected from pnicogen elements of N, P, As, Bi, and Sb). A high-sensitivity magnetic sensor, current sensor, or memory device can be made by using a magnetic pn homojunction structure made of thin films composed of the magnetic semiconductor material.
摘要:
A sensor for detecting a received electromagnetic wave comprising a first electrode, a second electrode and an amorphous oxide layer interposed between the first electrode and the second electrode.
摘要:
Semiconductor devices and circuits with use of transparent oxide film are provided. The semiconductor device having a P-type region and an N-type region, wherein amorphous oxides with electron carrier concentration less than 1018/cm3 is used for the N-type region.
摘要:
Disclosed is a 12CaO.7Al2O3 compound, a 12SrO.7Al2O3 compound, or a mixed crystal compound of 12CaO.7Al2O3 and 12SrO.7Al2O3, which contains a negative hydrogen ion (H−, H2−, H2− at a concentration of 1×1018 cm−3 or more. A negative hydrogen ion comprising a primary component of a hydride ion is incorporated into C12A7 (12CaO.7Al2O3), so that a function of being converted from an insulative material to an electrically conductive material in a sustained manner by means of irradiation with light can be exhibited even in the normal atmosphere at a room temperature. The present invention also provides a solid electrolyte capable of conducting a negative hydrogen ion, and means for releasing a hydride ion from the inside of a solid into a gaseous phase using an electric field.
摘要翻译:公开了一种12CaO·0.7Al 2 O 3 N 3化合物,12SrO·7H 2 O 3 O 3化合物,或 12CaO.7Al 2 O 3 3和12SrO 7 Al 2 O 3 3 N 3的混合晶体化合物,其含有负的 浓度为1×10 18的氢离子(H 2 - ,H 2 - ,H 2 - ) 包含氢离子的主要成分的负极性氢离子被并入到C12A7(12Ca0.7Al2O3)中, <! - SIPO - >,即使在室温的正常气氛中也可以显示通过照射光从持续的方式将绝缘材料转换成导电材料的功能,本发明还提供 能够导入负氢离子的固体电解质,以及使用电场将氢离子从固体内部释放到气相中的装置。
摘要:
The present invention relates to an amorphous oxide and a thin film transistor using the amorphous oxide. In particular, the present invention provides an amorphous oxide having an electron carrier concentration less than 1018/cm3, and a thin film transistor using such an amorphous oxide. In a thin film transistor having a source electrode 6, a drain electrode 5, a gate electrode 4, a gate insulating film 3, and a channel layer 2, an amorphous oxide having an electron carrier concentration less than 1018/cm3 is used in the channel layer 2.