公开(公告)号：US20100263466A1

公开(公告)日：2010-10-21

申请号：US12742824

申请日：2008-11-12

申请人： Tsutomu Kawakatsu ,  Yasuo Takeuchi ,  Hideki Komaba ,  Yutaka Yoshiba ,  Norikazu Hashimoto

发明人： Tsutomu Kawakatsu ,  Yasuo Takeuchi ,  Hideki Komaba ,  Yutaka Yoshiba ,  Norikazu Hashimoto

IPC分类号： F16H1/04

CPC分类号： F16H1/145 ,  F16H55/20 ,  F16H57/022 ,  F16H2057/0221 ,  G01M13/021 ,  Y10T74/1956

摘要： A method for adjusting the meshing position of a hypoid gear having a first gear, and a second gear meshing with the first gear and transmitting the rotary motion thereof in the direction different from the extending direction of the axis of rotation of the first gear. The method for adjusting the meshing position comprises; a) a step for displacing the second gear a plurality of times along the axial direction of rotation while meshing with the first gear, b) a step for measuring the transmission error at each displacement position and plotting the relation of the displacement distance of the second gear and the measured transmission error, c) a step for evaluating the virtual transmission error between the measured transmission errors from the measured transmission error, d) a step for subtracting the measured transmission error and the virtual transmission error from a maximum allowable transmission error to determine the difference, e) a step for determining the area of a part surrounded by the difference and the maximum allowable transmission error by integrating the difference with the displacement distance of the second gear, and f) a step for dividing the part at a predetermined area ratio and setting a point where the division line intersects the displacement distance of the second gear at the meshing position of the second gear.

摘要翻译： 一种用于调节具有第一齿轮的准双曲面齿轮的啮合位置的方法和与第一齿轮啮合的第二齿轮，并且沿与第一齿轮的旋转轴线的延伸方向不同的方向传递其旋转运动。 调整啮合位置的方法包括： a）在与所述第一齿轮啮合的同时使所述第二齿轮沿着轴向旋转多次的步骤，b）用于测量每个位移位置处的传动误差的步骤，并且绘制所述第二齿轮的位移距离的关系 齿轮和所测量的传输误差，c）根据测量的传输误差来评估所测量的传输误差之间的虚拟传输误差的步骤，d）从最大允许传输误差减去测量的传输误差和虚拟传输误差的步骤， 确定所述差异; e）通过将所述差与所述第二档位移距离进行积分来确定由所述差包围的部分的面积和所述最大允许传播误差的步骤，以及f）用于将所述部分划分为预定的步骤 并设定分割线与第二档位于距离的位移距离相交的点 第二档的铰接位置。

公开(公告)号：US4529476A

公开(公告)日：1985-07-16

申请号：US616114

申请日：1984-06-01

申请人： Yoshifumi Kawamoto ,  Hiroshi Kawakami ,  Tokuo Kure ,  Shinichi Tachi ,  Norikazu Hashimoto ,  Tsuyoshi Takaichi

发明人： Yoshifumi Kawamoto ,  Hiroshi Kawakami ,  Tokuo Kure ,  Shinichi Tachi ,  Norikazu Hashimoto ,  Tsuyoshi Takaichi

IPC分类号： C04B41/53 ,  C04B41/91 ,  C09K13/08 ,  H01L21/311 ,  B44C1/22 ,  C03C15/00 ,  C03C25/06

CPC分类号： C04B41/009 ,  C04B41/5346 ,  C04B41/91 ,  C09K13/08 ,  H01L21/31116

摘要： A dry-etching gas suitable for selective etching of silicon nitride and a process for selectively dry-etching silicon nitride with the dry-etching gas are disclosed. Silicon nitride can be dry-etched with a higher selectivity or at a higher etching rate than silicon dioxide and silicon, and a process for fabricating semi-conductor devices can be simplified and devices with a novel structure can be realized.

摘要翻译： 公开了适用于选择性蚀刻氮化硅的干蚀刻气体和用干蚀刻气体选择性干蚀刻氮化硅的工艺。 可以以比二氧化硅和硅更高的选择性或更高的蚀刻速率干蚀刻氮化硅，并且可以简化制造半导体器件的工艺，并且可以实现具有新颖结构的器件。

公开(公告)号：US4361949A

公开(公告)日：1982-12-07

申请号：US269507

申请日：1981-06-01

申请人： Ryoichi Hori ,  Masaharu Kubo ,  Norikazu Hashimoto ,  Shigeru Nishimatsu ,  Kiyoo Itoh

发明人： Ryoichi Hori ,  Masaharu Kubo ,  Norikazu Hashimoto ,  Shigeru Nishimatsu ,  Kiyoo Itoh

IPC分类号： H01L27/10 ,  H01L21/3213 ,  H01L21/60 ,  H01L21/768 ,  H01L21/8242 ,  H01L23/522 ,  H01L27/108 ,  H01L27/115 ,  H01L29/78 ,  H01L21/22

CPC分类号： H01L27/10844 ,  H01L21/76877 ,  H01L21/76897 ,  H01L27/115

摘要： A first semiconductor circuit element including a first electrode is formed on a semiconductor substrate, an insulating layer for insulating the first electrode is formed on the first electrode, and a first opening is provided in a part of this insulating layer.Subsequently, a second semiconductor circuit element is formed by forming a second electrode overlaying in part the insulating layer at an area other than the first opening and, a subsidiary conductive layer is formed in the first opening. Another insulating layer is formed on the structure thus formed, whereupon second and third openings are respectively provided in this latter insulating layer.First and second conductors are respectively deposited in the second and third openings, whereby electrical contact to the first and second electrodes are provided, with contact to the first electrode being via the subsidiary conductive layer.

摘要翻译： 包括第一电极的第一半导体电路元件形成在半导体衬底上，在第一电极上形成用于绝缘第一电极的绝缘层，并且在该绝缘层的一部分中设置第一开口。 随后，通过形成第二电极形成第二半导体电路元件，该第二电极部分地覆盖除了第一开口之外的区域的绝缘层，并且在第一开口中形成辅助导电层。 在由此形成的结构上形成另一绝缘层，于是在后一绝缘层中分别设置第二和第三开口。 第一和第二导体分别沉积在第二和第三开口中，由此提供与第一和第二电极的电接触，与第一电极的接触经由辅助导电层。

公开(公告)号：US4270262A

公开(公告)日：1981-06-02

申请号：US880618

申请日：1978-02-23

申请人： Ryoichi Hori ,  Masaharu Kubo ,  Norikazu Hashimoto ,  Shigeru Nishimatsu ,  Kiyoo Itoh

发明人： Ryoichi Hori ,  Masaharu Kubo ,  Norikazu Hashimoto ,  Shigeru Nishimatsu ,  Kiyoo Itoh

IPC分类号： H01L27/10 ,  H01L21/3213 ,  H01L21/60 ,  H01L21/768 ,  H01L21/8242 ,  H01L23/522 ,  H01L27/108 ,  H01L27/115 ,  H01L29/78 ,  H01L21/70 ,  H01L21/90

CPC分类号： H01L27/10844 ,  H01L21/76877 ,  H01L21/76897 ,  H01L27/115

摘要： A first semiconductor circuit element including a first electrode is formed on a semiconductor substrate, an inter-layer insulating layer for insulating the first electrode is formed on the first electrode, and a first penetrating opening is provided in a part of the inter-layer insulating layer.Subsequently, a step of forming a second semiconductor circuit element is carried out, this step including a step of forming a second electrode so that at least a part thereof may overlie the inter-layer insulating layer at an area other than the first penetrating opening. Further, a subsidiary interconnection conductive layer is buried into the first opening. Another insulating layer is formed on the structure thus formed, whereupon second and third penetrating openings are respectively provided in the insulating layer over the second electrode and the interconnection subsidiary conductive layer.First and second interconnection conductors are respectively buried into the second and third penetrating openings. The first electrode is conductively connected with the second interconnection conductor in the third opening via the subsidiary interconnection conductive layer in the first opening. The second electrode is conductively connected with the first interconnection conductor in the second opening.

摘要翻译： 包括第一电极的第一半导体电路元件形成在半导体衬底上，在第一电极上形成用于绝缘第一电极的层间绝缘层，并且第一穿透开口设置在层间绝缘体的一部分中 层。 随后，执行形成第二半导体电路元件的步骤，该步骤包括形成第二电极的步骤，使得其至少一部分可以覆盖除了第一穿透开口之外的区域的层间绝缘层。 此外，辅助互连导电层被埋入第一开口中。 在由此形成的结构上形成另一绝缘层，由此在第二电极和互连副导电层上的绝缘层中分别设置第二和第三穿透开口。 第一和第二互连导体分别埋入第二和第三穿透开口中。 第一电极通过第一开口中的辅助互连导电层与第三开口中的第二互连导体导电连接。 第二电极与第二开口中的第一互连导体导电连接。

公开(公告)号：US08551999B2

公开(公告)日：2013-10-08

申请号：US12740684

申请日：2008-10-29

申请人： Takumi Sumida ,  Fujio Tabusa ,  Kazuo Sekiguchi ,  Takeshi Kodama ,  Koichi Yasumura ,  Yutaka Kojima ,  Masaaki Motoyama ,  Keisuke Miyajima ,  Kenji Yoshida ,  Keizo Kan ,  Makoto Sakamoto ,  Hideki Takasu ,  Takashi Nakagawa ,  Naoto Ohi ,  Yasuo Harada ,  Norikazu Hashimoto ,  Hironori Matsuyama ,  Masatoshi Iida ,  Shigekazu Fujita ,  Tae Fukushima

发明人： Takumi Sumida ,  Fujio Tabusa ,  Kazuo Sekiguchi ,  Takeshi Kodama ,  Koichi Yasumura ,  Yutaka Kojima ,  Masaaki Motoyama ,  Keisuke Miyajima ,  Kenji Yoshida ,  Keizo Kan ,  Makoto Sakamoto ,  Hideki Takasu ,  Takashi Nakagawa ,  Naoto Ohi ,  Yasuo Harada ,  Norikazu Hashimoto ,  Hironori Matsuyama ,  Masatoshi Iida ,  Shigekazu Fujita ,  Tae Fukushima

IPC分类号： A61K31/496 ,  A61K31/454 ,  C07D401/12 ,  C07D401/14 ,  C07D405/14 ,  C07D417/14 ,  A61K31/506 ,  C07D403/12

CPC分类号： C07D401/12 ,  C07D403/12

摘要： The present invention provides a heterocyclic compound represented by General Formula (1): wherein R1 is a group R5—Z1—, etc., Z1 is a lower alkylene group, etc., and R5 is a group represented by General Formula; wherein R13 is a hydrogen atom, etc., m is an integer from 1 to 5; R2 is a hydrogen atom: Y is CH or N: A1 is a heterocyclic ring selected from the group consisting of indolediyl groups, wherein the heterocyclic ring may have at least one substituent: T is a group —CO—, etc.: R3 is a hydrogen atom, etc.: R4 is a lower alkyl group optionally substituted by one or more hydroxy groups, etc.: R3 and R4, together with the nitrogen atom to which they bind, may bind to each other and form a 5- to 10-membered saturated heterocyclic ring, wherein the heterocyclic ring may have at least one substituent. The heterocyclic compound of the present invention has excellent effects of suppressing the production of collagen and/or treating tumors.

摘要翻译： 本发明提供由通式（1）表示的杂环化合物：其中R1为R5-Z1-基团等，Z1为低级亚烷基等，R5为通式所示的基团。 其中R 13为氢原子等，m为1至5的整数; R2是氢原子：Y是CH或N：A1是选自吲哚二基的杂环，其中杂环可以具有至少一个取代基：T是-CO-等：R3是 氢原子等：R4是任选被一个或多个羟基取代的低级烷基等：R 3和R 4与它们所键合的氮原子一起可以彼此结合形成5- 10元饱和杂环，其中杂环可以具有至少一个取代基。 本发明的杂环化合物具有抑制胶原蛋白的生成和/或治疗肿瘤的优异效果。

公开(公告)号：US5132752A

公开(公告)日：1992-07-21

申请号：US658463

申请日：1991-02-22

申请人： Yasunari Umemoto ,  Nobuo Kotera ,  Kiichi Ueyanagi ,  Norikazu Hashimoto ,  Nobutoshi Matsunaga ,  Yasuo Wada ,  Shoji Shukuri ,  Noboru Masuda ,  Takehisa Hayashi ,  Hirotoshi Tanaka

发明人： Yasunari Umemoto ,  Nobuo Kotera ,  Kiichi Ueyanagi ,  Norikazu Hashimoto ,  Nobutoshi Matsunaga ,  Yasuo Wada ,  Shoji Shukuri ,  Noboru Masuda ,  Takehisa Hayashi ,  Hirotoshi Tanaka

IPC分类号： H01L29/10 ,  H01L29/812

CPC分类号： H01L29/1075 ,  H01L29/812 ,  Y10S257/903

摘要： A field effect transistor formed on a semi-insulator or compound semiconductor substrate comprises a first semiconductor layer forming a source region, a drain region and a channel layer, and a second semiconductor layer having a reverse conduction type to that of the first semiconductor layer. The second semiconductor layer is doped so that it will be totally depleted. Therefore, a portion of the second semiconductor layer adjacent to the substrate will remain conductive. The field effect transistor with this structure prevents the short channel effect and the soft error due to .alpha.-particles. A threshold voltage control arrangement is also provided using the feature of a control electrode coupled to the second semiconductor layer and a feedback arrangement.

摘要翻译： 形成在半绝缘体或化合物半导体衬底上的场效应晶体管包括形成源极区，漏极区和沟道层的第一半导体层以及具有与第一半导体层相反的导通型的第二半导体层。 第二半导体层被掺杂以使其完全耗尽。 因此，与衬底相邻的第二半导体层的一部分将保持导电。 具有这种结构的场效应晶体管防止短沟道效应和由于α-粒子引起的软误差。 还使用耦合到第二半导体层的控制电极的特征和反馈装置来提供阈值电压控制装置。

公开(公告)号：US4805005A

公开(公告)日：1989-02-14

申请号：US783086

申请日：1985-10-02

申请人： Toshiyuki Usagawa ,  Yasuhiro Shiraki ,  Yuichi Ono ,  Susumu Takahashi ,  Norikazu Hashimoto

发明人： Toshiyuki Usagawa ,  Yasuhiro Shiraki ,  Yuichi Ono ,  Susumu Takahashi ,  Norikazu Hashimoto

IPC分类号： H01L21/338 ,  H01L21/8252 ,  H01L27/095 ,  H01L29/10 ,  H01L29/778 ,  H01L29/80 ,  H01L29/812

CPC分类号： H01L29/7787 ,  H01L21/8252 ,  H01L29/1029 ,  H01L29/1075 ,  H01L29/8122

摘要： A semiconductor device and method of manufacturing the same. The device comprises a first n-type semiconductor layer and a second undoped semiconductor layer between which a hetero-junction is formed, and a third p-type embedded semiconductor layer, a gate metal formed without the exposure to air immediately after the third, second and first semiconductor layer are successively formed, and an external electrode connected with the third p-type embedded semiconductor layer, capable of controlling the carriers in the neighborhood of the hetero-junction. This semiconductor device greatly improves the controllability of the threshold voltage thereof, and provides the gate electrodes of good quality.

摘要翻译： 一种半导体器件及其制造方法。 该器件包括第一n型半导体层和在其之间形成异质结的第二未掺杂半导体层，以及第三p型嵌入式半导体层，在三分之一之后立即形成不暴露于空气的栅极金属，第二 并且连续形成第一半导体层，以及与第三p型嵌入式半导体层连接的能够控制异质结附近的载流子的外部电极。 该半导体器件极大地提高了其阈值电压的可控性，并且提供质量好的栅电极。