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公开(公告)号：US20120146027A1
公开(公告)日：2012-06-14
申请号：US13313539
申请日：2011-12-07
IPC分类号： H01L31/112 , H01L31/0376
CPC分类号： H01L27/14692
摘要： An adverse effect of parasitic capacitance on optical data output from a photodetector circuit is suppressed. A photodetector circuit includes a photoelectric conversion element; a first field-effect transistor; a second field-effect transistor; a first conductive layer functioning as a gate of the first field-effect transistor; an insulating layer provided over the first conductive layer; a semiconductor layer overlapping with the first conductive layer with the insulating layer interposed therebetween; a second conductive layer electrically connected to the semiconductor layer; and a third conductive layer electrically connected to the semiconductor layer, whose pair of side surfaces facing each other overlaps with at least one conductive layer including the first conductive layer with the insulating layer interposed therebetween, and which functions as the other of the source and the drain of the first field-effect transistor.
摘要翻译： 抑制寄生电容对光检测器电路的光数据输出的不良影响。 光检测器电路包括光电转换元件; 第一场效应晶体管; 第二场效应晶体管; 用作第一场效应晶体管的栅极的第一导电层; 设置在所述第一导电层上的绝缘层; 半导体层与第一导电层重叠，绝缘层插入其间; 电连接到半导体层的第二导电层; 电连接到所述半导体层的第三导电层，所述第三导电层与所述半导体层相对，所述第一导电层的一对侧表面与包括所述第一导电层的至少一个导电层重叠，所述第一导电层的绝缘层位于所述半导体层之间，并且其作为源和 第一场效应晶体管的漏极。
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公开(公告)号：US20120032193A1
公开(公告)日：2012-02-09
申请号：US13193741
申请日：2011-07-29
申请人： Yoshiyuki KUROKAWA , Takayuki IKEDA
发明人： Yoshiyuki KUROKAWA , Takayuki IKEDA
IPC分类号： H01L31/12 , H01L27/146 , H01L31/0216
CPC分类号： H01L27/1443 , H01L27/14623 , H01L27/14632 , H01L27/14634 , H01L27/1464 , H01L27/14643 , H01L27/14687 , H01L27/1469
摘要： To provide a solid-state image sensing device or a semiconductor display device, which can easily obtain the positional data of an object without contact. Included are a plurality of first photosensors on which light with a first incident angle is incident from a first incident direction and a plurality of second photosensors on which light with a second incident angle is incident from a second incident direction. The first incident angle of light incident on one of the plurality of first photosensors is larger than that of light incident on one of the other first photosensors. The second incident angle of light incident on one of the plurality of second photosensors is larger than that of light incident on one of the other second photosensors.
摘要翻译： 提供可以容易地获得物体的位置数据而不接触的固态图像感测装置或半导体显示装置。 包括多个第一光电传感器，其上具有第一入射角的光从第一入射方向入射，以及多个第二光电传感器，其上具有第二入射角的光从第二入射方向入射。 入射到多个第一光电传感器之一上的第一入射角大于入射到另一个第一光电传感器之一上的光的入射角。 入射到多个第二光电传感器中的一个上的光的第二入射角大于入射在另一个第二光电传感器之一上的光的入射角。
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公开(公告)号：US20120028590A1
公开(公告)日：2012-02-02
申请号：US13267007
申请日：2011-10-06
申请人： Yoshiyuki KUROKAWA
发明人： Yoshiyuki KUROKAWA
IPC分类号： H04B1/38
CPC分类号： H04B5/0037 , G06F15/7832 , Y02D10/12 , Y02D10/13
摘要： In a multi-core semiconductor device, a data bus between CPUs or the like consumes a larger amount of power. By provision of a plurality of CPUs which transmit data by a backscattering method of a wireless signal, a router circuit which mediates data transmission and reception between the CPUs or the like, and a thread control circuit which has a thread scheduling function, a semiconductor device which consumes less power and has high arithmetic performance can be provided at low cost.
摘要翻译： 在多核半导体器件中，CPU等之间的数据总线消耗更大的功率。 通过提供通过无线信号的后向散射方法发送数据的多个CPU，介导CPU等之间的数据发送和接收的路由器电路以及具有线程调度功能的线程控制电路，半导体器件 可以以低成本提供消耗较少功率并且具有高算术性能的功能。
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公开(公告)号：US20120002090A1
公开(公告)日：2012-01-05
申请号：US13170631
申请日：2011-06-28
CPC分类号： H04N5/353 , G09G3/3413 , G09G3/3648 , G09G2300/0876 , G09G2310/0235 , G09G2320/0261 , H01L27/1225 , H04N5/3696 , H04N5/3741 , H04N5/3745
摘要： An object is to provide a solid-state imaging device or a semiconductor display device with which a high-quality image can be taken. By performing operation using a global shutter method, a potential for controlling charge accumulation operation can be shared by all pixels. In addition, a first photosensor group includes a plurality of photosensors connected to a wiring supplied with an output signal, and a second photosensor group includes a plurality of photosensors connected to another wiring supplied with the output signal. A wiring for supplying a potential or a signal for controlling charge accumulation operation to the first photosensor group is connected to a wiring for supplying the potential or signal to the second photosensor group.
摘要翻译： 本发明的目的是提供一种可以获取高质量图像的固态成像装置或半导体显示装置。 通过使用全局快门方法执行操作，可以由所有像素共享用于控制电荷累积操作的电位。 此外，第一光传感器组包括连接到提供有输出信号的布线的多个光电传感器，并且第二光传感器组包括连接到提供有输出信号的另一布线的多个光电传感器。 用于向第一光电传感器组提供电位或用于控制电荷累积操作的信号的布线连接到用于向第二光电传感器组提供电位或信号的布线。
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公开(公告)号：US20110310132A1
公开(公告)日：2011-12-22
申请号：US13150686
申请日：2011-06-01
申请人： Yoshiyuki KUROKAWA , Takayuki IKEDA
发明人： Yoshiyuki KUROKAWA , Takayuki IKEDA
CPC分类号： G09G3/3648 , G09G3/3406 , G09G3/3607 , G09G2300/0426 , G09G2310/0205 , G09G2310/0235
摘要： Image quality of a field-sequential liquid crystal display device is improved by increasing the frequency of input of an image signal. Among pixels arranged in matrix, image signals are concurrently supplied to pixels provided in a plurality of rows. Thus, the frequency of input of an image signal to each of the pixels of the liquid crystal display device can be increased. As a result, in the liquid crystal display device, display deterioration such as color break which is caused in a field-sequential liquid crystal display device can be suppressed and image quality can be improved.
摘要翻译： 通过增加图像信号的输入频率来改善场顺序液晶显示装置的图像质量。 在排列成矩阵的像素中，将图像信号同时提供给设置在多行中的像素。 因此，可以增加对液晶显示装置的每个像素的图像信号的输入频率。 结果，在液晶显示装置中，可以抑制在场顺序液晶显示装置中引起的诸如色差的显示劣化，并且可以提高图像质量。
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公开(公告)号：US20110291013A1
公开(公告)日：2011-12-01
申请号：US13113470
申请日：2011-05-23
CPC分类号： G06F3/0421 , G06F3/0428 , H01L27/144 , H01L27/14625 , H01L31/0232 , H01L31/02327
摘要： Influence of external light is suppressed. With a photodetector including a photodetector circuit which generates a data signal in accordance with illuminance of incident light and a light unit which overlaps with the photodetector circuit, a first data signal is generated by the photodetector circuit when the light unit is in an ON state, a second data signal is formed by the photodetector circuit when the light unit is in an OFF state, and the first data signal and the second data signal are compared, so that a difference data signal that is data of a difference between the two compared data signals is generated.
摘要翻译： 外部光的影响被抑制。 利用包括根据入射光的照度产生数据信号的光电检测器电路和与光电检测器电路重叠的光单元的光检测器，当光单元处于导通状态时，由光检测器电路产生第一数据信号， 当光单元处于关闭状态时，第二数据信号由光检测器电路形成，并且比较第一数据信号和第二数据信号，使得作为两个比较数据之间的差的数据的差分数据信号 生成信号。
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公开(公告)号：US20110248268A1
公开(公告)日：2011-10-13
申请号：US13167762
申请日：2011-06-24
申请人： Koji DAIRIKI , Takayuki IKEDA , Hidekazu MIYAIRI , Yoshiyuki KUROKAWA , Hiromichi GODO , Daisuke KAWAE , Takayuki INOUE , Satoshi KOBAYASHI
发明人： Koji DAIRIKI , Takayuki IKEDA , Hidekazu MIYAIRI , Yoshiyuki KUROKAWA , Hiromichi GODO , Daisuke KAWAE , Takayuki INOUE , Satoshi KOBAYASHI
IPC分类号： H01L29/786
CPC分类号： H01L29/78618 , H01L29/04 , H01L29/41733 , H01L29/4908 , H01L29/66765 , H01L29/78696
摘要： To improve problems with on-state current and off-state current of thin film transistors, a thin film transistor includes a pair of impurity semiconductor layers to which an impurity element imparting one conductivity type is added, provided with a space therebetween; a conductive layer which is overlapped, over the gate insulating layer, with the gate electrode and one of the pair of impurity semiconductor layers to which an impurity element imparting one conductivity type is added; and an amorphous semiconductor layer which is provided successively between the pair of impurity semiconductor layers to which an impurity element imparting one conductivity type is added in such a manner that the amorphous semiconductor layer extends over the gate insulating layer from the conductive layer and is in contact with both of the pair of impurity semiconductor layers to which an impurity element imparting one conductivity type is added.
摘要翻译： 为了改善薄膜晶体管的导通电流和截止电流的问题，薄膜晶体管包括一对杂质半导体层，赋予一种导电类型的杂质元素，在其间具有间隔; 在所述栅极绝缘层上与所述栅电极和添加了赋予一种导电类型的杂质元素的所述一对杂质半导体层中的一个重叠的导电层; 以及非晶半导体层，其被连续地设置在赋予一种导电类型的杂质元素的一对杂质半导体层之间，使得非晶半导体层从导电层延伸到栅极绝缘层上并且接触 同时添加赋予一种导电类型的杂质元素的一对杂质半导体层。
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公开(公告)号：US20110221723A1
公开(公告)日：2011-09-15
申请号：US13032894
申请日：2011-02-23
申请人： Yoshiyuki KUROKAWA , Takayuki IKEDA
发明人： Yoshiyuki KUROKAWA , Takayuki IKEDA
IPC分类号： G09G5/00
CPC分类号： G06F3/0412 , G06F3/042 , G09G3/3648 , G09G2354/00
摘要： A display device has a pixel array including a plurality of pixels arranged in a matrix and a backlight provided to face a substrate over which the pixel array is formed, and display element portions photosensor portions are formed in the pixels. In the display device, in one frame period for displaying a black image which is interposed between two successive periods forming an image or a backlighting shutoff period in one frame period in which the display element portion holds an image, an accumulation operation of the photosensor portion is performed, the pixels are successively selected for each row, and a signal corresponding to the potential of a signal charge accumulation portion of the photosensor portion is output.
摘要翻译： 显示装置具有包括排列成矩阵的多个像素的像素阵列和设置为面对形成有像素阵列的基板的背光，并且在像素中形成显示元件部光传感器部。 在显示装置中，在显示部件保持图像的一个帧周期中显示插入在形成图像的两个连续周期的两个连续周期或背光关闭周期之间的黑框图像的一个帧周期中，光传感器部分 执行对于每一行依次选择像素，并且输出与光电传感器部分的信号电荷累积部分的电位相对应的信号。
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公开(公告)号：US20110220889A1
公开(公告)日：2011-09-15
申请号：US13039491
申请日：2011-03-03
IPC分类号： H01L31/032
CPC分类号： H01L27/14643 , G02F1/1362 , G02F2001/13312 , H01L27/1225 , H01L27/14632 , H01L27/1464 , H04N5/378
摘要： An object is to achieve low-power consumption by reducing the off-state current of a transistor in a photosensor. A semiconductor device including a photosensor having a photodiode, a first transistor, and a second transistor; and a read control circuit including a read control transistor, in which the photodiode has a function of supplying charge based on incident light to a gate of the first transistor; the first transistor has a function of storing charge supplied to its gate and converting the charge stored into an output signal; the second transistor has a function of controlling reading of the output signal; the read control transistor functions as a resistor converting the output signal into a voltage signal; and semiconductor layers of the first transistor, the second transistor, and the read control transistor are formed using an oxide semiconductor.
摘要翻译： 目的是通过降低光电传感器中的晶体管的截止电流来实现低功耗。 一种半导体器件，包括具有光电二极管的光传感器，第一晶体管和第二晶体管; 以及包括读取控制晶体管的读取控制电路，其中光电二极管具有基于入射光向第一晶体管的栅极提供电荷的功能; 第一晶体管具有存储提供给其栅极的电荷并将存储的电荷转换为输出信号的功能; 第二晶体管具有控制输出信号的读取的功能; 读控制晶体管用作将输出信号转换成电压信号的电阻器; 并且使用氧化物半导体形成第一晶体管，第二晶体管和读控制晶体管的半导体层。
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公开(公告)号：US20110175091A1
公开(公告)日：2011-07-21
申请号：US13075436
申请日：2011-03-30
IPC分类号： H01L29/786 , H01L21/336 , H01L33/02
CPC分类号： H01L29/41733 , H01L29/04 , H01L29/66765 , H01L29/78696
摘要： To provide a display device having a thin film transistor with high electric characteristics and excellent reliability and a manufacturing method thereof. A gate electrode, a gate insulating film provided over the gate electrode, a first semiconductor layer provided over the gate insulating film and having a microcrystalline semiconductor, a second semiconductor layer provided over the first semiconductor layer and having an amorphous semiconductor, and a source region and a drain region provided over the second semiconductor layer are provided. The first semiconductor layer has high crystallinity than the second semiconductor layer. The second semiconductor layer includes an impurity region having a conductivity type different from a conductivity type of the source region and the drain region between the source region and the drain region.
摘要翻译： 提供具有高电特性和优异可靠性的薄膜晶体管的显示装置及其制造方法。 栅电极，设置在栅电极上的栅极绝缘膜，设置在栅绝缘膜上并具有微晶半导体的第一半导体层，设置在第一半导体层上并具有非晶半导体的第二半导体层，以及源极区 并且设置在第二半导体层上的漏极区。 第一半导体层具有比第二半导体层高的结晶度。 第二半导体层包括具有不同于源极区域的导电类型和源极区域与漏极区域之间的漏极区域的导电类型的杂质区域。
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