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    Method of fabrication of an FeRAM capacitor and an FeRAM capacitor formed by the method
    11.
    发明授权
    Method of fabrication of an FeRAM capacitor and an FeRAM capacitor formed by the method 失效
    通过该方法形成FeRAM电容器和FeRAM电容器的制造方法

    公开(公告)号：US07001780B2

    公开(公告)日：2006-02-21

    申请号：US10635140

    申请日：2003-08-06

    申请人： Haoren Zhuang ,  Ulrich Egger ,  Jingyu Lian ,  Stefan Gernhardt ,  Hiroyuki Kanaya

    发明人： Haoren Zhuang ,  Ulrich Egger ,  Jingyu Lian ,  Stefan Gernhardt ,  Hiroyuki Kanaya

    IPC分类号： H01L21/00

    CPC分类号： H01L28/86 ,  H01L27/11507 ,  H01L28/55 ,  H01L28/65 ,  H01L28/90

    摘要： A ferroelectric device includes a bottom electrode on which are formed ferrocapacitor elements and, over the ferroelectric elements, top electrodes. The bottom electrodes are connected to lower layers of the device via conductive plugs, and the plugs and bottom electrodes are spaced apart by barrier elements of Ir and/or IrO2. The barrier elements are narrower than the bottom electrode elements, and are formed by a separate etching process. This means that Ir fences are not formed during the etching of the bottom electrode. Also, little Ir and/or IrO2 diffuses through the bottom electrode to the ferroelectric elements, and therefore there is little risk of damage to the ferroelectric material.

    摘要翻译： 铁电体元件包括底电极，其上形成有铁电体元件，并且在铁电元件上形成顶电极。 底部电极通过导电插头连接到器件的下层，并且插头和底部电极被Ir和/或IrO 2的阻挡元件隔开。 阻挡元件比底部电极元件窄，并且通过单独的蚀刻工艺形成。 这意味着在底电极的蚀刻期间不形成Ir栅栏。 此外，很少的Ir和/或IrO 2 <2>通过底部电极扩散到铁电体元件，因此几乎不会损坏铁电体材料的风险。

    Semiconductor integrated circuit and method for manufacturing the same
    15.
    发明授权
    Semiconductor integrated circuit and method for manufacturing the same 失效
    半导体集成电路及其制造方法

    公开(公告)号：US06303958B1

    公开(公告)日：2001-10-16

    申请号：US09095890

    申请日：1998-06-11

    申请人： Hiroyuki Kanaya ,  Osamu Hidaka ,  Kumi Okuwada ,  Hiroshi Mochizuki

    发明人： Hiroyuki Kanaya ,  Osamu Hidaka ,  Kumi Okuwada ,  Hiroshi Mochizuki

    IPC分类号： H01L27108

    CPC分类号： H01L27/11502 ,  H01L27/11507

    摘要： A semiconductor integrated circuit has a ferroelectric capacitor. The ferroelectric capacitor includes a first insulation film formed above a semiconductor substrate, a first electrode which is buried in a first hole formed in the first insulation film and whose surface is flattened, a second insulation film formed above the first insulation film and having a second hole above the first electrode, a ferroelectric film formed in the second hole, and a second electrode formed in the second hole and above the ferroelectric film and flattened so as to be flush with a surface of the second insulation film.

    摘要翻译： 半导体集成电路具有铁电电容器。 铁电电容器包括形成在半导体衬底上的第一绝缘膜，第一电极，其被埋在形成在第一绝缘膜中的表面平坦化的第一孔中，形成在第一绝缘膜上方的第二绝缘膜， 在第二孔中形成的铁电膜，形成在第二孔中并在铁电体膜上方的第二电极，并且与第二绝缘膜的表面齐平。

    Magnetic random access memory
    16.
    发明授权
    Magnetic random access memory 有权
    磁性随机存取存储器

    公开(公告)号：US09276195B2

    公开(公告)日：2016-03-01

    申请号：US13965149

    申请日：2013-08-12

    申请人： Hiroyuki Kanaya ,  Kuniaki Sugiura

    发明人： Hiroyuki Kanaya ,  Kuniaki Sugiura

    IPC分类号： H01L29/82 ,  H01L43/00 ,  H01L43/02 ,  H01L43/08 ,  H01L27/22

    CPC分类号： H01L43/02 ,  H01L27/228 ,  H01L43/08

    摘要： According to one embodiment, a magnetic random access memory includes a magnetoresistive element, a contact arranged under the magnetoresistive element and connected to the magnetoresistive element, and an insulating film continuously formed from a periphery of the contact to a side surface of the magnetoresistive element and including a protective portion covering the side surface of the magnetoresistive element.

    摘要翻译： 根据一个实施例，磁性随机存取存储器包括磁阻元件，布置在磁阻元件下方并连接到磁阻元件的触点，以及从触点的周边连续形成到磁阻元件的侧表面的绝缘膜，以及 包括覆盖磁阻元件的侧表面的保护部分。

    Semiconductor device and method of manufacturing the same
    18.
    发明授权
    Semiconductor device and method of manufacturing the same 失效
    半导体装置及其制造方法

    公开(公告)号：US07508020B2

    公开(公告)日：2009-03-24

    申请号：US11385999

    申请日：2006-03-22

    申请人： Hiroyuki Kanaya

    发明人： Hiroyuki Kanaya

    IPC分类号： H01L29/94

    CPC分类号： H01L28/55 ,  H01L27/11502 ,  H01L27/11507

    摘要： A semiconductor device comprising a substrate and a ferroelectric capacitor formed on the substrate. The ferroelectric capacitor includes a lower electrode, an upper electrode and a ferroelectric film interposed between the lower and upper electrodes. The ferroelectric capacitor having sidewalls receded from sidewalls of the upper electrode.

    摘要翻译： 一种半导体器件，包括形成在衬底上的衬底和铁电电容器。 铁电电容器包括下电极，上电极和介于下电极和上电极之间的铁电体膜。 铁电电容器具有从上电极的侧壁退出的侧壁。

    Semiconductor memory device and method of manufacturing the same
    19.
    发明授权
    Semiconductor memory device and method of manufacturing the same 失效

    公开(公告)号：US07402858B2

    公开(公告)日：2008-07-22

    申请号：US11941755

    申请日：2007-11-16

    申请人： Osamu Hidaka ,  Iwao Kunishima ,  Hiroyuki Kanaya

    发明人： Osamu Hidaka ,  Iwao Kunishima ,  Hiroyuki Kanaya

    IPC分类号： H01L29/76 ,  H01L29/94

    CPC分类号： H01L27/11502 ,  H01L21/76802 ,  H01L27/105 ,  H01L27/11507 ,  H01L27/11509 ,  H01L28/55

    摘要： A semiconductor memory device includes a semiconductor substrate having a first region and a second region, a transistor placed in the first region of the semiconductor substrate, a first insulating film formed on the semiconductor substrate in the first and second regions and on the transistor, a first ferroelectric capacitor formed on the first insulating film in the first region and electrically connected to the transistor, a hydrogen barrier film formed above the first ferroelectric capacitor and above the first insulating film in the first and second regions, a first contact penetrating the hydrogen barrier film in the first region and electrically connected to the first ferroelectric capacitor, and a second contact which penetrates the hydrogen barrier film in the second region and which is in a floating state.