公开(公告)号：US07501665B2

公开(公告)日：2009-03-10

申请号：US11589087

申请日：2006-10-30

申请人： Hidefumi Yasuda ,  Yuko Kato ,  Kazuhiro Ikezawa ,  Toshiyuki Terada

发明人： Hidefumi Yasuda ,  Yuko Kato ,  Kazuhiro Ikezawa ,  Toshiyuki Terada

IPC分类号： H01L33/00

CPC分类号： H01L33/10 ,  H01L33/0079 ,  H01L33/22

摘要： A semiconductor light emitting device comprises: a semiconductor laminated body; an electrode provided on the first major surface of the semiconductor laminated body; and a reflecting layer provided on the second major surface side of the semiconductor laminated body. The semiconductor laminated body includes a light emitting layer and having a first major surface and a second major surface located on the opposite side of the first major surface. A light emitted from the light emitting layer is extracted from the first major surface. The reflecting layer is conductive and reflective of the light emitted from the light emitting layer. At least a portion of the reflecting layer, which is opposed to the electrode, has irregularities.

摘要翻译： 一种半导体发光器件包括：半导体层叠体; 设置在半导体层叠体的第一主表面上的电极; 以及设置在半导体层叠体的第二主表面侧的反射层。 半导体层叠体包括发光层，并且具有位于第一主表面的相对侧上的第一主表面和第二主表面。 从第一主表面提取从发光层发射的光。 反射层是导电的并且反射从发光层发射的光。 与电极相对的反射层的至少一部分具有不规则性。

公开(公告)号：US07453099B2

公开(公告)日：2008-11-18

申请号：US11538646

申请日：2006-10-04

申请人： Yuko Kato ,  Hidefumi Yasuda ,  Kazuyoshi Furukawa

发明人： Yuko Kato ,  Hidefumi Yasuda ,  Kazuyoshi Furukawa

IPC分类号： H01L33/00

CPC分类号： H01L33/20 ,  H01L33/0079 ,  H01L33/08 ,  H01L33/38 ,  H01L33/405 ,  H01L33/42

摘要： A semiconductor light emitting device has a transparent layer having a first main surface and a second main surface at a side opposite to the first main surface, a plurality of light emitting sections arranged in at least one line on the first main surface of the transparent layer, each of the plurality of light emitting sections having an active layer and a tapered section, the tapered section reflecting light emitted from the active layer to the direction of the transparent layer, each of the plurality of light emitting sections having a central portion and a peripheral portion and having light intensity distribution on a second main surface of the transparent layer, on the second main surface of the transparent layer, light intensity at a region opposite to the peripheral portion being equal to or more than light intensity at a region opposite to the central portion, and a plurality of contact sections arranged opposite to the central portion on the second main surface of the transparent layer, each of the plurality of contact sections being opaque with respect to emission wavelengths of the plurality of light emitting sections.

摘要翻译： 半导体发光器件具有在与第一主表面相对的一侧具有第一主表面和第二主表面的透明层，多个发光部分布置在透明层的第一主表面上的至少一条线上 所述多个发光部中的每一个具有有源层和锥形部，所述锥形部将从所述有源层发射的光反射到所述透明层的方向，所述多个发光部中的每一个具有中心部和 并且在透明层的第二主表面上具有光强度分布，在透明层的第二主表面上，与周边部分相反的区域处的光强度等于或大于与透明层相反的区域处的光强度 中央部分和与透明物的第二主表面上的中心部分相对设置的多个接触部分 多个接触部分中的每一个相对于多个发光部分的发射波长是不透明的。

公开(公告)号：US20070096116A1

公开(公告)日：2007-05-03

申请号：US11589087

申请日：2006-10-30

申请人： Hidefumi Yasuda ,  Yuko Kato ,  Kazuhiro Ikezawa ,  Toshiyuki Terada

发明人： Hidefumi Yasuda ,  Yuko Kato ,  Kazuhiro Ikezawa ,  Toshiyuki Terada

IPC分类号： H01L33/00 ,  H01L31/12 ,  H01L27/15 ,  H01L29/26

CPC分类号： H01L33/10 ,  H01L33/0079 ,  H01L33/22

摘要： A semiconductor light emitting device comprises: a semiconductor laminated body; an electrode provided on the first major surface of the semiconductor laminated body; and a reflecting layer provided on the second major surface side of the semiconductor laminated body. The semiconductor laminated body includes a light emitting layer and having a first major surface and a second major surface located on the opposite side of the first major surface. A light emitted from the light emitting layer is extracted from the first major surface. The reflecting layer is conductive and reflective of the light emitted from the light emitting layer. At least a portion of the reflecting layer, which is opposed to the electrode, has irregularities.

摘要翻译： 一种半导体发光器件包括：半导体层叠体; 设置在半导体层叠体的第一主表面上的电极; 以及设置在半导体层叠体的第二主表面侧的反射层。 半导体层叠体包括发光层，并且具有位于第一主表面的相对侧上的第一主表面和第二主表面。 从第一主表面提取从发光层发射的光。 反射层是导电的并且反射从发光层发射的光。 与电极相对的反射层的至少一部分具有不规则性。

公开(公告)号：US20070096110A1

公开(公告)日：2007-05-03

申请号：US11342539

申请日：2006-01-31

申请人： Yuko Kato ,  Hidefumi Yasuda

发明人： Yuko Kato ,  Hidefumi Yasuda

IPC分类号： H01L33/00

CPC分类号： H01L33/38 ,  H01L33/20 ,  H01L33/42 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2924/00014 ,  H01L2924/00

摘要： A semiconductor light emitting device comprises: a semiconductor laminated body including a light emitting layer and having a light extraction surface for light emitted from the light emitting layer, a conductive film provided on the light extraction surface of the semiconductor laminated body and being translucent to the light emitted from the light emitting layer and an electrode provided above the conductive film. The conductive film has at least two levels of thickness.

摘要翻译： 一种半导体发光器件包括：半导体层叠体，包括发光层并具有用于从发光层发射的光的光提取表面;导电膜，设置在半导体层叠体的光提取表面上，并且对于 从发光层发射的光和设置在导电膜上方的电极。 导电膜具有至少两层厚度。

公开(公告)号：US07148521B2

公开(公告)日：2006-12-12

申请号：US11047666

申请日：2005-02-02

申请人： Hidefumi Yasuda ,  Yuko Kato ,  Kazuyoshi Furukawa

发明人： Hidefumi Yasuda ,  Yuko Kato ,  Kazuyoshi Furukawa

IPC分类号： H01L29/22

CPC分类号： H01L33/20 ,  H01L33/08 ,  H01L33/46

摘要： A semiconductor light emitting device comprises: a substrate having first and second major surfaces; a light emitting layer provided in a first portion on the first major surface of the substrate; a first electrode provided above the light emitting layer; a second electrode provided in a second portion on the first major surface of the substrate, the second portion being different from the first portion; and a protrusion provided on the second major surface of the substrate, the protrusion having a planar shape that reflects a planar shape of a light emitting area of the light emitting layer, the light emitting area being sandwiched between the first electrode and the second electrode and facing the protrusion.

摘要翻译： 一种半导体发光器件包括：具有第一和第二主表面的衬底; 设置在所述基板的所述第一主表面上的第一部分中的发光层; 设置在所述发光层上方的第一电极; 设置在所述基板的所述第一主表面上的第二部分中的第二电极，所述第二部分不同于所述第一部分; 以及设置在所述基板的所述第二主表面上的突起，所述突起具有反映所述发光层的发光区域的平面形状的平面形状，所述发光区域夹在所述第一电极和所述第二电极之间， 面对突起。

公开(公告)号：US06208032B1

公开(公告)日：2001-03-27

申请号：US09337672

申请日：1999-06-22

申请人： Hidefumi Yasuda ,  Mayumi Tomita

发明人： Hidefumi Yasuda ,  Mayumi Tomita

IPC分类号： H01L2348

CPC分类号： H01L24/02 ,  H01L23/53242 ,  H01L2224/0401 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/05042 ,  H01L2924/10329 ,  H01L2924/12044 ,  H01L2924/14

摘要： A semiconductor device having an inter-layer insulation film that allows a refractory metal to be easily etched and that well covers high side walls of a gold plate and a fabrication method thereof are disclosed. The semiconductor device comprises a semiconductor substrate, a conductive portion formed on the semiconductor substrate, a metal film formed on the conductive portion, a gold plate portion formed on the metal film, an inter-layer insulation film formed on an area of the semiconductor substrate, the area being free from the conductive portion, the metal film, and the gold plate portion in such a manner that the inter-layer insulation film contacts side walls of the conductive portion, the metal film, and the gold plate portion, a refractory metal film formed in such a manner that the refractory metal film coats the gold plate portion, and a protection film formed in such a manner that the protection film exposes part of the refractory metal film as an electrically connecting portion and coats the inter-layer insulation film and the refractory metal film.

摘要翻译： 公开了一种半导体器件，其具有允许难熔金属易于蚀刻并且覆盖金板的高侧壁的层间绝缘膜及其制造方法。 半导体器件包括半导体衬底，形成在半导体衬底上的导电部分，形成在导电部分上的金属膜，形成在金属膜上的金板部分，形成在半导体衬底的区域上的层间绝缘膜 所述区域不含导电部分，金属膜和金板部分，使得层间绝缘膜接触导电部分，金属膜和金板部分的侧壁，耐火材料 金属膜以耐火金属膜涂覆金板部分的方式形成，并且保护膜以这样的方式形成，使得保护膜将难熔金属膜的一部分暴露为电连接部分并且涂覆层间绝缘体 薄膜和难熔金属薄膜。

公开(公告)号：US08357557B2

公开(公告)日：2013-01-22

申请号：US12717537

申请日：2010-03-04

申请人： Akira Fujimoto ,  Ryota Kitagawa ,  Koji Asakawa ,  Hidefumi Yasuda ,  Yasuhiko Akaike ,  Takeyuki Suzuki

发明人： Akira Fujimoto ,  Ryota Kitagawa ,  Koji Asakawa ,  Hidefumi Yasuda ,  Yasuhiko Akaike ,  Takeyuki Suzuki

IPC分类号： H01L33/54

CPC分类号： H01L33/22 ,  H01L33/005

摘要： One aspect of the present invention provides a semiconductor light-emitting device improved in luminance, and also provides a process for production thereof. The process comprises a procedure of forming a relief structure on the light-extraction surface of the device by use of a self-assembled film. In that procedure, the light-extraction surface is partly covered with a protective film so as to protect an area for an electrode to be formed therein. The electrode is then finally formed there after the procedure. The process thus reduces the area incapable, due to thickness of the electrode, of being provided with the relief structure. Between the electrode and the light-extraction surface, a contact layer is formed so as to establish ohmic contact between them.

摘要翻译： 本发明的一个方面提供了一种提高亮度的半导体发光器件，并且还提供了其生产方法。 该方法包括通过使用自组装膜在装置的光提取表面上形成浮雕结构的步骤。 在该过程中，光提取表面部分地被保护膜覆盖，以保护其中形成电极的区域。 然后在程序之后最后形成电极。 该方法因此减小了由于电极的厚度而不能设置有浮雕结构的区域。 在电极和光提取表面之间，形成接触层以在它们之间建立欧姆接触。

公开(公告)号：US20120187414A1

公开(公告)日：2012-07-26

申请号：US13439895

申请日：2012-04-05

申请人： Akira Fujimoto ,  Ryota Kitagawa ,  Koji Asakawa ,  Hidefumi Yasuda ,  Yasuhiko Akaike ,  Takeyuki Suzuki

发明人： Akira Fujimoto ,  Ryota Kitagawa ,  Koji Asakawa ,  Hidefumi Yasuda ,  Yasuhiko Akaike ,  Takeyuki Suzuki

IPC分类号： H01L33/22 ,  H01L33/30

CPC分类号： H01L33/22 ,  H01L33/005

摘要： One aspect of the present invention provides a semiconductor light-emitting device improved in luminance, and also provides a process for production thereof. The process comprises a procedure of forming a relief structure on the light-extraction surface of the device by use of a self-assembled film. In that procedure, the light-extraction surface is partly covered with a protective film so as to protect an area for an electrode to be formed therein. The electrode is then finally formed there after the procedure. The process thus reduces the area incapable, due to thickness of the electrode, of being provided with the relief structure. Between the electrode and the light-extraction surface, a contact layer is formed so as to establish ohmic contact between them.

摘要翻译： 本发明的一个方面提供了一种提高亮度的半导体发光器件，并且还提供了其生产方法。 该方法包括通过使用自组装膜在装置的光提取表面上形成浮雕结构的步骤。 在该过程中，光提取表面部分地被保护膜覆盖，以保护其中形成电极的区域。 然后在程序之后最后形成电极。 该方法因此减小了由于电极的厚度而不能设置有浮雕结构的区域。 在电极和光提取表面之间，形成接触层以在它们之间建立欧姆接触。

公开(公告)号：US20120070958A1

公开(公告)日：2012-03-22

申请号：US13238715

申请日：2011-09-21

申请人： Kazuyoshi Furukawa ,  Yoshinori Natsume ,  Yasuhiko Akaike ,  Shinji Nunotani ,  Wakana Nishiwaki ,  Masaaki Ogawa ,  Toru Kita ,  Hidefumi Yasuda

发明人： Kazuyoshi Furukawa ,  Yoshinori Natsume ,  Yasuhiko Akaike ,  Shinji Nunotani ,  Wakana Nishiwaki ,  Masaaki Ogawa ,  Toru Kita ,  Hidefumi Yasuda

IPC分类号： H01L21/762

CPC分类号： H01L21/185 ,  H01L21/76251 ,  H01L33/0079

摘要： In a method of manufacturing a semiconductor device of an embodiment, at room temperature, a first substrate including a semiconductor laminate body is adhered to a second substrate with a smaller thermal expansion coefficient than that of the first substrate. Then, the first substrate and the second substrate are heated with the first substrate heated at a temperature higher than that of the second substrate. Thus the first substrate and the second substrate are bonded together. The first substrate is either a sapphire substrate including a nitride-based semiconductor layer, or a GaAs substrate including a phosphorus-based semiconductor layer. The second substrate is a silicon substrate, a GaAs substrate, a Ge substrate, or a metal substrate.

摘要翻译： 在本实施方式的半导体装置的制造方法中，在室温下，具有比第一基板的热膨胀系数小的第一基板与第二基板粘合。 然后，第一基板和第二基板被加热，第一基板在比第二基板的温度高的温度下加热。 因此，第一基板和第二基板结合在一起。 第一衬底是包括氮化物基半导体层的蓝宝石衬底或包括磷基半导体层的GaAs衬底。 第二基板是硅衬底，GaAs衬底，Ge衬底或金属衬底。

公开(公告)号：US20100221856A1

公开(公告)日：2010-09-02

申请号：US12717537

申请日：2010-03-04

申请人： Akira Fujimoto ,  Ryota Kitagawa ,  Koji Asakawa ,  Hidefumi Yasuda ,  Yasuhiko Akaike ,  Takeyuki Suzuki

发明人： Akira Fujimoto ,  Ryota Kitagawa ,  Koji Asakawa ,  Hidefumi Yasuda ,  Yasuhiko Akaike ,  Takeyuki Suzuki

IPC分类号： H01L33/30 ,  H01L33/44 ,  H01L33/00

CPC分类号： H01L33/22 ,  H01L33/005

摘要： One aspect of the present invention provides a semiconductor light-emitting device improved in luminance, and also provides a process for production thereof. The process comprises a procedure of forming a relief structure on the light-extraction surface of the device by use of a self-assembled film. In that procedure, the light-extraction surface is partly covered with a protective film so as to protect an area for an electrode to be formed therein. The electrode is then finally formed there after the procedure. The process thus reduces the area incapable, due to thickness of the electrode, of being provided with the relief structure. Between the electrode and the light-extraction surface, a contact layer is formed so as to establish ohmic contact between them.

摘要翻译： 本发明的一个方面提供了一种提高亮度的半导体发光器件，并且还提供了其生产方法。 该方法包括通过使用自组装膜在装置的光提取表面上形成浮雕结构的步骤。 在该过程中，光提取表面部分地被保护膜覆盖，以保护其中形成电极的区域。 然后在程序之后最后形成电极。 该方法因此减小了由于电极的厚度而不能设置有浮雕结构的区域。 在电极和光提取表面之间，形成接触层以在它们之间建立欧姆接触。