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11.发明公开公开(公告)号：US20230208110A1
公开(公告)日：2023-06-29
申请号：US17919843
申请日：2021-04-21
Applicant: ams-OSRAM International GmbH
Inventor： Peter FUCHS , Bruno JENTZSCH , Hubert HALBRITTER , Martin Rudolf BEHRINGER , Alvaro GOMEZ-IGLESIAS , Christian LAUER , Dean Maximilian SCHOKE , Tomasz SWIETLIK
CPC classification number: H01S5/4043 , G01S17/88 , H01S5/3095
Abstract: According to embodiments, a semiconductor laser comprises a semiconductor layer stack, which comprises an active zone for generating radiation. The semiconductor laser also comprises a first resonator mirror, a second resonator mirror, and an optical resonator, which is arranged between the first and second resonator mirrors and extends in a direction parallel to a main surface of the semiconductor layer stack. A reflectance R1 of the first resonator mirror is wavelength-dependent, so that R1 or a product R of R1 and the reflectance R2 of the second resonator mirror in a wavelength range decreases from a target wavelength λ0 of the laser to λ0+Δλ from a value R0, wherein Δλ is selected as a function of a temperature-dependent shift in an emission wavelength.
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公开(公告)号：US20230126297A1
公开(公告)日：2023-04-27
申请号：US17919909
申请日：2021-04-21
Applicant: ams-OSRAM International GmbH
Inventor： Martin Rudolf BEHRINGER , Bruno JENTZSCH , Hubert HALBRITTER
Abstract: The invention relates to a semiconductor laser comprising a semiconductor layer arrangement, having an active zone for radiation generation, as well as comprising a first resonator mirror, a second resonator mirror and a resonator arranged between the first and the second resonator mirror, which ends in a direction parallel to a main surface of the semiconductor layer arrangement. The semiconductor laser also comprises a first wavelength-selective absorption element which is arranged between the semiconductor layer arrangement and the first resonator mirror.
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公开(公告)号：US20230101630A1
公开(公告)日：2023-03-30
申请号：US17910005
申请日：2021-02-23
Applicant: ams-OSRAM International GmbH
Inventor： Bruno JENTZSCH , Hubert HALBRITTER
Abstract: An optoelectronic semiconductor laser component may include at least two laser units. The semiconductor laser component may have an output coupling surface configured to generate electromagnetic radiation in the semiconductor laser component. Each laser unit may include a laser resonator having a resonator axis, an output coupling mirror and a first and a second resonator mirror with a primary section of the resonator axis running laterally therebetween. The output coupling mirror may be formed by a partial region of the output coupling surface. Along the primary section of the resonator axis at least one contact strip is arranged on the output coupling surface, and extends to a metallic connection surface. The laser units may be aligned in such a way that the primary sections of the resonator axes run parallel to one another and the output coupling mirrors face one another.
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14.发明申请公开(公告)号：US20250047066A1
公开(公告)日：2025-02-06
申请号：US18707226
申请日：2022-11-02
Applicant: ams-OSRAM International GmbH
Inventor： Hubert HALBRITTER , Bruno JENTZSCH , Adrian Stefan AVRAMESCU , Laura KREINER , Lutz HÖPPEL , Christoph EICHLER
Abstract: A surface emitting semiconductor laser is disclosed that includes a semiconductor layer sequence having an active layer for generating laser radiation, a carrier substrate on one side of the semiconductor layer sequence, and an optical structure for influencing at least one degree of freedom of the laser radiation. The carrier substrate is different from a growth substrate of the semiconductor layer sequence and the growth substrate is at least partly removed. The optical structure has a varying refractive index in a lateral direction for the laser radiation.
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15.发明公开公开(公告)号：US20240332901A1
公开(公告)日：2024-10-03
申请号：US18576609
申请日：2022-06-29
Applicant: AMS-OSRAM International GmbH
Inventor： Hubert HALBRITTER , Lutz HOEPPEL , Sven GERHARD
CPC classification number: H01S5/18311 , H01S5/18347 , H01S5/18361 , H01S5/3211 , H01S5/32341
Abstract: The invention relates to a surface-emitting semiconductor laser, including a first semiconductor layer of a first conductivity type, the first semiconductor layer being structured forming a mesa, an active zone for generating electromagnetic radiation and a second semiconductor layer of a second conductivity type. The first semiconductor layer, the active zone and the second semiconductor layer are arranged on top of one another forming a semiconductor layer stack. The surface-emitting semiconductor laser further comprises a sheath layer which adjoins a lateral wall of the mesa.
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Patent Agency Ranking
公开(公告)号：US20240297481A1
公开(公告)日：2024-09-05
申请号：US18573012
申请日：2022-06-10
Applicant: ams-OSRAM International GmbH
Inventor： Hubert HALBRITTER
IPC: H01S5/11 , H01S5/02326 , H01S5/185
CPC classification number: H01S5/11 , H01S5/02326 , H01S5/185 , H01S2301/17 , H01S2301/18
Abstract: An optoelectronic component includes a housing. An optical element and a semiconductor laser are arranged along a common optical axis within the housing. The semiconductor laser is designed to generate, by means of a laser process, a light beam having a diffraction-limited divergence such that the light beam is substantially collimated on the optical element.
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公开(公告)号：US20240266802A1
公开(公告)日：2024-08-08
申请号：US18563177
申请日：2022-05-18
Applicant: ams-OSRAM International GmbH
Inventor： Hubert HALBRITTER , Adrian Stefan AVRAMESCU , Laura KREINER , Bruno JENTZSCH , Alvaro GOMEZ-IGLESIAS
CPC classification number: H01S5/11 , H01S5/185 , H01S5/3416 , H01S5/343
Abstract: An optoelectronic component includes a stacked arrangement including a photonic crystal and a gain medium. The gain medium includes a layer sequence composed of two quantum wells and at least one tunnel diode and is set up to emit an electromagnetic wave. The photonic crystal is electromagnetically coupled to the gain medium. The stacked arrangement is disposed on a substrate. Alternatively or additionally, the gain medium includes at least one quantum well. The photonic crystal is structured in a dielectric layer and electromagnetically coupled to the gain medium.
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18.发明公开公开(公告)号：US20240097401A1
公开(公告)日：2024-03-21
申请号：US18262797
申请日：2021-12-22
Applicant: ams-OSRAM International GmbH
Inventor： Hubert HALBRITTER , Laura KREINER
Abstract: A surface-emitting semiconductor laser includes a first semiconductor layer of a first conductivity type, an active zone which is suitable for generating electromagnetic radiation, an ordered photonic structure, and a second semiconductor layer of a second conductivity type. The active zone is arranged between the first and second semiconductor layers. The ordered photonic structure is formed in the first semiconductor layer, and a part of the first semiconductor layer is adjacent to both sides of the ordered photonic structure. Alternatively, the ordered photonic structure is arranged in an additional semiconductor layer between the active zone and the second semiconductor layer. A part of the additional semiconductor layer is arranged between the ordered photonic structure and the second semiconductor layer.
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公开(公告)号：US20230350033A1
公开(公告)日：2023-11-02
申请号：US18044389
申请日：2021-08-23
Applicant: ams-OSRAM International GmbH
Inventor： Hubert HALBRITTER
IPC: G01S7/4912 , G01S7/4911 , G01S7/4914 , G01S17/58 , G01S7/481
CPC classification number: G01S7/4917 , G01S7/4911 , G01S7/4914 , G01S17/58 , G01S7/4815 , G01S7/4818
Abstract: An optical measurement system may include a device for emitting electromagnetic radiation, comprising a plurality of laser elements. The optical measurement system may include an optical element, comprising a first waveguide and adapted to transmit a first partial beam of irradiated electromagnetic radiation and to incouple a second partial beam of the electromagnetic radiation into the first waveguide at a first position and to outcouple the second partial beam from the first waveguide at a second position. The optical measurement system moreover comprises a plurality of detectors for detecting signals which are generated by superimposing electromagnetic radiation reflected by an object and electromagnetic radiation outcoupled from the first waveguide.
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20.发明公开公开(公告)号：US20230178695A1
公开(公告)日：2023-06-08
申请号：US17923772
申请日：2021-05-05
Applicant: ams-OSRAM International GmbH
Inventor： Peter STAUSS , Hubert HALBRITTER
CPC classification number: H01L33/58 , H01L33/42 , H01L2933/0016 , H01L2933/0058
Abstract: The invention relates to a radiation-emitting semiconductor component comprising a semiconductor body which has an active zone for generating radiation and a radiation exit surface, a contact element which is arranged on the radiation exit surface at a first lateral distance from a first edge piece of the radiation exit surface and at a second lateral distance from a second edge piece of the radiation exit surface, and a decoupling structure for improving the decoupling of the radiation generated by the active zone, which decoupling structure is arranged on the radiation exit surface and has structural elements, wherein the structural elements vary in such a way that the radiation decoupling increases from the contact element to the first and/or second edge piece. Furthermore, a method is specified for producing a such a radiation-emitting semiconductor element.
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