公开(公告)号：US10988856B2

公开(公告)日：2021-04-27

申请号：US16473401

申请日：2018-02-13

申请人： SILTRONIC AG

发明人： Thomas Schroeck

IPC分类号： C30B13/20 ,  C30B13/30 ,  C30B29/06

摘要： A single crystal is pulled by an FZ method, in which a polycrystal is melted by means of an electromagnetic melting apparatus and then recrystallized, wherein a first phase (P1) a lower end of the polycrystal, which is moved toward the melting apparatus, is melted by the melting apparatus to form a drop, and in a second phase (P2) a monocrystalline seed is attached to the lower end of the polycrystal and is melted beginning from an upper end of the seed, where a power (P) of the melting apparatus during the first phase (P1) and during the second phase (P2) is predetermined at least temporarily in dependence on a temperature and/or geometrical dimensions of crystal material used which comprises the drop and/or the seed and/or the polycrystal.

公开(公告)号：US20190311941A1

公开(公告)日：2019-10-10

申请号：US16309014

申请日：2017-07-03

申请人： SILTRONIC AG

发明人： Patrick MOOS ,  Hannes HECHT

IPC分类号： H01L21/687 ,  C30B25/12 ,  C30B29/06

摘要： A device for handling a semiconductor wafer in an epitaxy reactor has a susceptor; longitudinal holes extending through the susceptor; a wafer lifting shaft; wafer lifting pins guided through the longitudinal holes; a susceptor carrying shaft; susceptor carrying arms; susceptor support pins; guide sleeves anchored in the susceptor carrying arms; and guide elements protruding from the guide sleeves which, at upper ends, have bores into which wafer lifting pins are inserted, and which can be raised and lowered together with the wafer lifting pins by the wafer lifting shaft.

公开(公告)号：US10240235B2

公开(公告)日：2019-03-26

申请号：US13407832

申请日：2012-02-29

申请人： Georg Brenninger ,  Alois Aigner ,  Christian Hager

发明人： Georg Brenninger ,  Alois Aigner ,  Christian Hager

IPC分类号： C23C16/44 ,  H01L21/67 ,  C23C16/458 ,  H01L21/687

摘要： An apparatus for depositing a material layer originating from process gas on a substrate wafer, contains: a reactor chamber delimited by an upper dome, a lower dome, and a side wall; a susceptor for holding the substrate wafer during the deposition of the material layer; a preheating ring surrounding the susceptor; a liner, on which the preheating ring is supported in a centered position wherein a gap having a uniform width is present between the preheating ring and the susceptor; and a spacer acting between the liner and the preheating ring, the spacer keeping the preheating ring in the centered position and providing a distance Δ between the preheating ring and the liner.

公开(公告)号：US10137483B2

公开(公告)日：2018-11-27

申请号：US15137004

申请日：2016-04-25

申请人： Siltronic AG

发明人： Yoshihiro Mori ,  Teruo Haibara ,  Etsuko Kubo ,  Masashi Uchibe

IPC分类号： B08B3/10 ,  B08B3/12

摘要： A cleaning method for cleaning an object involves disposing the object in a cleaning liquid held in a cleaning tank; and ultrasonically vibrating the cleaning liquid via an intermediate medium in contact with the cleaning tank, wherein the ultrasonically vibrating includes: ultrasonically vibrating the cleaning liquid with a first difference between respective sonic velocities allowable in the cleaning liquid and the intermediate medium; and ultrasonically vibrating the cleaning liquid with a second difference between the respective sonic velocities allowable in the cleaning liquid and the intermediate medium, wherein the second difference is different from the first difference.

公开(公告)号：US10121649B2

公开(公告)日：2018-11-06

申请号：US12592706

申请日：2009-12-01

申请人： Teruo Haibara

发明人： Teruo Haibara

IPC分类号： B08B3/00 ,  H01L21/02 ,  B08B3/10 ,  B08B3/12

摘要： A wax removal method uniformly removes wax adhering to a wafer surface and reduces the problems of re-adhesion of particles and filter clogging of a cleaning bath during cleaning. The method uses cleaning liquid which contains microbubbles.

公开(公告)号：US20180185882A1

公开(公告)日：2018-07-05

申请号：US15737728

申请日：2016-03-15

申请人： SILTRONIC AG ,  WACKER CHEMIE AG

发明人： Andreas BERGMANN ,  Thomas BUSCHHARDT ,  Simon EHRENSCHWENDTNER ,  Christian FRAUNHOFER

IPC分类号： B07B13/07 ,  B07B1/12

CPC分类号： B07B13/07 ,  B07B1/12

摘要： Polysilicon chunks or granules are classified into size fractions using a mechanical screen having a profiled surface having peaks and valleys, and terminating in widening slots through which a polysilicon size fraction falls. The device is effective and the slots are resistant to clogging.

公开(公告)号：US09828693B2

公开(公告)日：2017-11-28

申请号：US14711942

申请日：2015-05-14

申请人： SILTRONIC AG

发明人： Georg Brenninger ,  Georg Raming

IPC分类号： C30B13/08 ,  C30B13/20 ,  C30B11/00 ,  C30B13/14 ,  C30B13/30 ,  C30B29/06 ,  C30B11/10 ,  C30B15/12 ,  C30B15/02

CPC分类号： C30B13/20 ,  C30B11/001 ,  C30B11/003 ,  C30B11/10 ,  C30B13/08 ,  C30B13/14 ,  C30B13/30 ,  C30B15/02 ,  C30B15/12 ,  C30B29/06 ,  Y10T117/108

摘要： A crystal of semiconductor material is produced in an apparatus having a crucible with a crucible bottom and a crucible wall, the crucible bottom having a top surface, an underside, and a multitude of openings disposed between the crucible wall and a center of the crucible bottom, and elevations disposed on the top surface and the underside of the crucible bottom; and an induction heating coil disposed below the crucible for melting semiconductor material and stabilizing a melt of semiconductor material covering a growing crystal of semiconductor material. The growth process comprises generating a bed of a semiconductor material feed on the top surface of the crucible bottom and melting semiconductor material on the bed using the induction heating coil.

公开(公告)号：US09573296B2

公开(公告)日：2017-02-21

申请号：US14691646

申请日：2015-04-21

申请人： Siltronic AG

发明人： Georg Pietsch

IPC分类号： B24D5/00 ,  B28D5/04 ,  B24B27/06 ,  B23D57/00

CPC分类号： B28D5/045 ,  B23D57/0023 ,  B23D57/0053 ,  B23D61/185 ,  B24B27/0633

摘要： A method for simultaneously cutting a multiplicity of slices from a cylindrical workpiece, along strictly convex cutting faces, by supplying a suspension of hard substances in a carrier liquid, as cutting medium, to wire portions, while the wire portions, having a longitudinal tension, define a relative motion to the workpiece as a result of wire guide roller rotation with continual alternation between a first direction of rotation and a second direction of rotation, which is opposite to the first direction of rotation, wherein, during the rotation in the first direction, the wire is moved a first length, and during the rotation in the second direction, the wire is moved a second length, and the second length is shorter than the first, and at the cutting operation start a first longitudinal wire tension is greater than a second longitudinal tension at the end.

摘要翻译： 通过将作为切割介质的载体液体中的硬物质的悬浮液供给到线部分，同时沿着严格凸起的切割面同时从圆柱形工件切割多个切片的方法，同时具有纵向张力的线部分， 由于导线辊的旋转，与第一旋转方向相反的第一旋转方向和与第一方向相反的第二旋转方向之间的连续交替，限定了与工件的相对运动，其中，在第一方向的旋转期间 电线移动第一长度，并且在第二方向的旋转期间，线移动第二长度，并且第二长度短于第一长度，并且在切割操作开始时，第一纵向线张力大于 在最后的第二纵向张力。

公开(公告)号：US09539695B2

公开(公告)日：2017-01-10

申请号：US12242963

申请日：2008-10-01

申请人： Georg Pietsch ,  Michael Kerstan ,  Heiko aus dem Spring

发明人： Georg Pietsch ,  Michael Kerstan ,  Heiko aus dem Spring

IPC分类号： B24B37/08 ,  B24B37/28 ,  B24B37/32 ,  B24B37/04

CPC分类号： B24B37/28 ,  B24B37/042 ,  B24B37/08 ,  B24B37/32 ,  Y10T29/49

摘要： Carriers suitable for receiving one or more semiconductor wafers for the machining thereof in lapping, grinding or polishing machines, comprise a core of a first material which has a high stiffness, the core being completely or partly coated with a second material, and also at least one cutout for receiving a semiconductor wafer, wherein the second material is a thermoset polyurethane elastomer having a Shore A hardness of 20-90. The carriers are preferably coated with the second material after chemical surface activation and application of adhesion promoter, and may be used for simultaneous double-side material-removing machining of a plurality of semiconductor wafers.

摘要翻译： 适于接收一个或多个半导体晶片以用于研磨，研磨或抛光机器的加工的载体包括具有高硬度的第一材料的芯，所述芯完全或部分地涂覆有第二材料，并且还至少 一个用于接收半导体晶片的切口，其中所述第二材料是肖氏A硬度为20-90的热固性聚氨酯弹性体。 载体优选在化学表面活化和施加粘合促进剂之后用第二材料涂覆，并且可以用于多个半导体晶片的同时双面材料去除加工。

公开(公告)号：US09422634B2

公开(公告)日：2016-08-23

申请号：US13705207

申请日：2012-12-05

申请人： Siltronic AG

发明人： Georg Raming ,  Ludwig Altmannshofer ,  Gundars Ratnieks ,  Johann Landrichinger ,  Josef Lobmeyer ,  Alfred Holzinger

IPC分类号： C30B13/20 ,  C30B13/30 ,  C30B29/06

CPC分类号： C30B13/20 ,  C30B13/30 ,  C30B29/06 ,  Y10T117/1088

摘要： Single crystals are produced by means of the floating zone method, wherein the single crystal crystallizes below a melt zone at a crystallization boundary, and the emission of crystallization heat is impeded by a reflector surrounding the single crystal, wherein the single crystal is heated in the region of an outer edge of the crystallization boundary by means of a heating device in a first zone, wherein a distance Δ between an outer triple point Ta at the outer edge of the crystallization boundary and a center Z of the crystallization boundary is influenced. An apparatus for producing the single crystal provides a heat source below the melting induction coil and above the reflector.

摘要翻译： 通过浮区法制备单晶，其中单晶在结晶边界处在熔融区以下结晶，并且结晶热的发射被围绕单晶的反射器阻碍，其中单晶在 通过第一区域中的加热装置，结晶边界的外边缘的区域，其中结晶边界外边缘处的外三重点Ta与结晶边界的中心Z之间的距离Δ受到影响。 用于制造单晶的装置在熔化感应线圈下方和反射器上方提供热源。