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    BIDIRECTIONAL CONTACTLESS POWER SUPPLY DEVICE
    12.
    发明申请
    BIDIRECTIONAL CONTACTLESS POWER SUPPLY DEVICE 审中-公开
    双向无接点供电装置

    公开(公告)号：US20160126750A1

    公开(公告)日：2016-05-05

    申请号：US14891723

    申请日：2014-05-21

    Applicant: TECHNOVA INC.

    Inventor： Tomio YASUDA ,  Isami NORIGOE ,  Tomiyasu ISAGO

    IPC: H02J5/00

    CPC classification number: B60L11/182 ,  B60L53/12 ,  H02J7/0042 ,  H02J7/025 ,  H02J50/10 ,  H02J50/12 ,  H02J50/80

    Abstract: A SS-method bidirectional contactless power supply device is arranged such that at the time of G2V, a second power converter converts commercial alternating current to direct current, a first power converter converts the direct current to high-frequency alternating current, and a third power converter converts the high-frequency alternating current to the direct current to charge an electric storage device. On driving the first power converter with a constant voltage, the electric storage device is charged with a constant current. At the time of V2G, the third power converter converts the direct current to the high-frequency alternating current, the first power converter converts the high-frequency alternating current to the direct current, and the second power converter converts the direct current to the commercial alternating current. On driving the third power converter with the constant current, an output of the first power converter becomes the constant voltage.

    Abstract translation: SS方式的双向非接触式电源装置被配置为使得在G2V时，第二功率转换器将商用交流电转换成直流电，第一功率转换器将直流电转换为高频交流电，第三功率 转换器将高频交流电转换为直流电以对蓄电装置充电。 在以恒定电压驱动第一功率转换器时，蓄电装置以恒定电流充电。 在V2G时，第三功率转换器将直流电转换为高频交流电，第一功率转换器将高频交流电转换为直流电，第二功率转换器将直流电转换为商用 交流电。 在以恒定电流驱动第三功率转换器时，第一功率转换器的输出变为恒定电压。

    P-type thermoelectric material
    14.
    发明授权
    P-type thermoelectric material 失效
    P型热电材料

    公开(公告)号：US5484490A

    公开(公告)日：1996-01-16

    申请号：US200321

    申请日：1994-02-23

    Applicant: Shigeki Tokita ,  Makoto Okabayashi ,  Takashi Amano ,  Isao Nishida

    Inventor： Shigeki Tokita ,  Makoto Okabayashi ,  Takashi Amano ,  Isao Nishida

    IPC: C01B33/06 ,  H01C7/00 ,  H01L35/20 ,  H01L35/22 ,  H01L35/14

    CPC classification number: H01L35/22

    Abstract: A P-type thermoelectric material consists essentially of iron disilicide, metallic manganese and metallic aluminium dissolved in or alloyed with the iron disilicide, and silicon oxide and/or aluminum oxide present in the iron disilicide. The manganese is contained in an amount of from 1.67 to 4.1 atomic % with respect to a sum of atoms of iron and silicon constituting the iron disilicide, the metallic manganese and the metallic aluminum taken as 100 atomic %, and the metallic aluminum contained in an amount of from 1.33 to 3.33 atomic % with respect thereto, and a sum of the metallic manganese and the metallic aluminum in an amount of from 4.0 to 5.34 atomic % with respect thereto. The P-type thermoelectric material having such a composition produces a thermoelectromotive force equal to or greater than those of the conventional P-type thermoelectric materials comprised of iron disilicide, and it exhibits a mean resistivity equal to or smaller than that of the N-type thermoelectric material. Hence, a thermocouple including the P-type thermoelectric material and the N-type thermoelectric material can be remarkably enhanced in the performance as a whole.

    Abstract translation: P型热电材料基本上由二硅化铁，金属锰和金属铝组成，其与二硅化铁相溶合或与二硅化铁合金，以及存在于二硅化铁中的氧化硅和/或氧化铝。 相对于构成二硅化铁的铁和硅的原子，金属锰和金属铝为100原子％的原子总和，含锰量为1.67〜4.1原子％，金属铝的含量为 相对于此为1.33〜3.33原子％，金属锰和金属铝的总量相对于其为4.0〜5.34原子％。 具有这种组成的P型热电材料产生等于或大于由二硅化铁组成的常规P型热电材料的热电动势，并且其具有等于或小于N型的平均电阻率 热电材料。 因此，作为整体的性能，可以显着提高包括P型热电材料和N型热电材料的热电偶。

    System for wirelessly supplying power during moving
    15.
    发明授权
    System for wirelessly supplying power during moving 有权

    公开(公告)号：US10065515B2

    公开(公告)日：2018-09-04

    申请号：US15123013

    申请日：2014-03-04

    Applicant: TECHNOVA INC.

    Inventor： Tomio Yasuda ,  Hiroyuki Kishi ,  Isami Norigoe

    IPC: B60L11/18 ,  B60L5/00 ,  H02J7/02 ,  H02J50/12 ,  H02J50/40

    Abstract: On the ground, a plurality of primary power supply transformers are separately installed with a longitudinal direction of magnetic poles matching a vehicle traveling direction. The primary power supply transformers each include a double-sided coil with an H-shaped core around which a wire is wound. On a vehicle, a secondary power supply transformer including an H-shaped core is mounted with a longitudinal direction of magnetic poles matching a vehicle front-back direction. The distance between the primary power supply transformers is set such that the distance between the centers of the magnetic poles of the neighboring primary power supply transformers does not exceed 3D where D represents the size of the magnetic poles.

    BIDIRECTIONAL CONTACTLESS POWER TRANSFER SYSTEM
    17.
    发明申请
    BIDIRECTIONAL CONTACTLESS POWER TRANSFER SYSTEM 审中-公开
    双向无接力电力传输系统

    公开(公告)号：US20150001958A1

    公开(公告)日：2015-01-01

    申请号：US14377466

    申请日：2012-02-09

    Applicant: Shigeru Abe ,  Yasuyoshi Kaneko ,  Hiroshi Watanabe ,  Tomio Yasuda

    Inventor： Shigeru Abe ,  Yasuyoshi Kaneko ,  Hiroshi Watanabe ,  Tomio Yasuda

    IPC: H02J5/00

    CPC classification number: H02J50/12 ,  B60L15/007 ,  B60L50/16 ,  B60L53/12 ,  B60L53/22 ,  B60L53/34 ,  B60L53/36 ,  B60L2210/30 ,  B60L2210/40 ,  H02J7/022 ,  H02J7/025 ,  H02J50/10 ,  H02M3/33584 ,  H02M7/797 ,  Y02T10/645 ,  Y02T10/70 ,  Y02T10/7005 ,  Y02T10/7077 ,  Y02T10/7088 ,  Y02T10/7241 ,  Y02T10/92 ,  Y02T90/121 ,  Y02T90/122 ,  Y02T90/125 ,  Y02T90/127 ,  Y02T90/14

    Abstract: An example according to one embodiment includes a first coil and a second coil spaced apart therefrom. The system is supplied with power from a primary-side circuit to a secondary-side circuit and vice versa. The primary-side circuit includes the first coil. The secondary-side circuit includes the second coil. The primary-side circuit connects to a first converter that converts direct current into alternating current and vice versa. The first converter connects to second converter that converts direct current into alternating current and vice versa, and the second converter further connects to a commercial power supply. The secondary-side circuit connects to third converter that converts direct current into alternating current and vice versa, and the third converter further connects to direct current power supply of a moving body. Bidirectional power transfer is performed only by a switching operation of the first converter, the second converter, and the third converter.

    Abstract translation: 根据一个实施例的示例包括第一线圈和与其间隔开的第二线圈。 该系统由初级侧电路供电到次级侧电路，反之亦然。 初级侧电路包括第一线圈。 次级侧电路包括第二线圈。 初级侧电路连接到将直流电转换为交流电的第一转换器，反之亦然。 第一转换器连接到将直流转换成交流电的第二转换器，反之亦然，并且第二转换器进一步连接到商用电源。 次级侧电路连接到将直流转换成交流电的第三转换器，反之亦然，第三转换器进一步连接到移动体的直流电源。 仅通过第一转换器，第二转换器和第三转换器的开关操作来执行双向功率传输。

    Thermoelectric semiconductor having a sintered semiconductor layer and fabrication process thereof
    20.
    发明授权
    Thermoelectric semiconductor having a sintered semiconductor layer and fabrication process thereof 失效
    具有烧结半导体层的热电半导体及其制造方法

    公开(公告)号：US5959341A

    公开(公告)日：1999-09-28

    申请号：US901791

    申请日：1997-07-28

    Applicant: Katsuhiro Tsuno ,  Tsuyoshi Tosho ,  Hideo Watanabe

    Inventor： Katsuhiro Tsuno ,  Tsuyoshi Tosho ,  Hideo Watanabe

    IPC: B22F7/00 ,  H01L35/08 ,  H01L35/16 ,  H01L35/34 ,  H02L31/058

    CPC classification number: H01L35/08 ,  H01L35/16 ,  H01L35/34 ,  Y10S257/93

    Abstract: A thermoelectric semiconductor is formed of a sintered semiconductor layernd metal layers arranged on sides of opposite end faces of the sintered semiconductor layer. These metal layers are to inhibit a reaction between the sintered semiconductor layer and older layers through which electrodes are joined to the sintered semiconductor layer. The sintered semiconductor layer and the metal layers have been obtained beforehand by integrally sintering a semiconductor powder layer and metal sheets arranged on sides of opposite end faces of the semiconductor powder layer.

    Abstract translation: 热电半导体由烧结半导体层和布置在烧结半导体层的相对端面侧的金属层形成。 这些金属层能够抑制烧结半导体层与电极与烧结半导体层接合的老层之间的反应。 通过一体烧结半导体粉末层和布置在半导体粉末层的相对端面侧的金属片，预先获得烧结半导体层和金属层。

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