Method for hot isostatic pressing a substrate
    11.
    发明授权
    Method for hot isostatic pressing a substrate 有权
    热等静压基材的方法

    公开(公告)号:US08920706B2

    公开(公告)日:2014-12-30

    申请号:US13238173

    申请日:2011-09-21

    Abstract: Disclosed is a method for hot isostatic pressing a substrate. At first, a metal container is provided. Powder is filled in the metal container before the metal container is located in an oven. The metal container is subjected to isostatic pressing that includes heating and pressing. Thus, the metal container shrinks and presses on the powder evenly and turns the powder into a nugget. The metal container is moved out of the oven and broken to release the nugget. A substrate is cut from the nugget. With the hot isostatic pressing, the substrate exhibits only a few flaws and is large, fine, homogenous and strong so that the substrate is not vulnerable to deformation in a high-pressure environment.

    Abstract translation: 公开了一种用于热等静压基板的方法。 首先,提供金属容器。 在金属容器位于烤箱中之前,将粉末填充在金属容器中。 对金属容器进行包括加热和压制在内的等静压。 因此,金属容器收缩并均匀地压在粉末上,并将粉末变成熔核。 将金属容器从烘箱中移出并破碎以释放熔核。 从熔核切割基材。 通过热等静压,基板只有少量缺陷,大而细,均匀而坚固,因此基板在高压环境下不易变形。

    High pressure apparatus and method for nitride crystal growth
    12.
    发明授权
    High pressure apparatus and method for nitride crystal growth 有权
    用于氮化物晶体生长的高压装置和方法

    公开(公告)号:US08097081B2

    公开(公告)日:2012-01-17

    申请号:US12133364

    申请日:2008-06-05

    Inventor: Mark P. D'Evelyn

    Abstract: A high pressure apparatus and related methods for processing supercritical fluids. In a specific embodiment, the present apparatus includes a capsule, a heater, at least one ceramic ring but can be multiple rings, optionally, with one or more scribe marks and/or cracks present. In a specific embodiment, the apparatus optionally has a metal sleeve containing each ceramic ring. The apparatus also has a high-strength enclosure, end flanges with associated insulation, and a power control system. IN a specific embodiment, the apparatus is capable of accessing pressures and temperatures of 0.2-2 GPa and 400-1200° C., respectively.

    Abstract translation: 一种用于加工超临界流体的高压装置及相关方法。 在具体实施例中,本装置包括胶囊,加热器,至少一个陶瓷环,但可以是多个环,任选地,存在一个或多个划痕和/或裂纹。 在具体实施例中,该装置可选地具有包含每个陶瓷环的金属套筒。 该设备还具有高强度外壳,具有相关绝缘的端部法兰和电源控制系统。 在具体实施例中,该装置能够分别访问0.2-2GPa和400-1200℃的压力和温度。

    Mass of polycrystalline cubic system boron nitride and composites of polycrystalline cubic system boron nitride and other hard materials, and processes for manufacturing the same
    15.
    发明授权
    Mass of polycrystalline cubic system boron nitride and composites of polycrystalline cubic system boron nitride and other hard materials, and processes for manufacturing the same 失效
    多晶CIBIC系统的硼酸盐和多晶硅系统的复合物和其他硬质材料的制造及其制造方法

    公开(公告)号:US3852078A

    公开(公告)日:1974-12-03

    申请号:US21156471

    申请日:1971-12-23

    Abstract: This invention gives bonded or compact bodies of polycrystalline cubic system boron nitride and substantially uniform composites of polycrystalline cubic system boron nitride and other hard materials, for example, metal borides, such as titanium boride and zirconium boride, covalent or metallic cabides, such as boron carbide, silicon carbide, titanium, carbide, tungsten carbide and chromium carbide, metal nitrides, such as titanium nitride, tantalum nitride, silicon nitride and aluminum nitride, metal oxides, such as alumina and silica, complex oxide such as garnet and agate, and diamond. Further, this invention provides a process of obtaining the bonded body of these materials which comprises subjecting hexagonal system boron nitride powder, or a mixture of hexagonal system boron nitride powder and cubic system boron nitride crystal powder or powders of the above-mentioned hard materials to high temperatures and high pressures.

    Abstract translation: 本发明提供了多晶立方氮化硼和多晶立方氮化硼和其它硬质材料的基本上均匀的复合材料的结合体或致密体,例如金属硼化物,例如硼化钛和硼化锆,共价或金属催化剂,例如硼 碳化物,碳化硅,钛,碳化物,碳化钨和碳化铬,金属氮化物,例如氮化钛,氮化钽,氮化硅和氮化铝,金属氧化物如氧化铝和二氧化硅,复合氧化物如石榴石和玛瑙,以及 钻石。 此外,本发明提供了获得这些材料的接合体的方法,其包括将六方晶系氮化硼粉末或六方晶系氮化硼粉末和立方体系氮化硼晶体粉末或上述硬质材料的粉末的混合物 高温高压。

    High pressure apparatus and method for nitride crystal growth
    16.
    发明授权
    High pressure apparatus and method for nitride crystal growth 有权
    用于氮化物晶体生长的高压装置和方法

    公开(公告)号:US09157167B1

    公开(公告)日:2015-10-13

    申请号:US13556105

    申请日:2012-07-23

    Abstract: A high pressure apparatus and related methods for processing supercritical fluids are disclosed. In certain embodiments, the present apparatus includes a capsule, a heater, at least one ceramic ring or multiple rings, optionally, with one or more scribe marks and/or cracks present. In certain embodiments, the apparatus has a metal sleeve containing each ceramic ring. The apparatus also has a high strength enclosure, end flanges with associated insulation, and a power control system. In certain embodiments, a high pressure apparatus is constructed such that the diametric annular gap between the outer diameter of the heater and the ceramic ring is selected to provide radial load-bearing contact above a particular temperature and pressure. In certain embodiments, the apparatus is capable of accessing pressures of 0.2 GPa to 2 GPa and temperatures of 400° C. to 1200° C.

    Abstract translation: 公开了一种用于加工超临界流体的高压装置和相关方法。 在某些实施方案中,本装置包括胶囊,加热器,至少一个陶瓷环或多个环,任选地,存在一个或多个划痕和/或裂纹。 在某些实施例中,该装置具有包含每个陶瓷环的金属套筒。 该设备还具有高强度外壳,具有相关绝缘的端部法兰和功率控制系统。 在某些实施例中,高压设备被构造成使得加热器外径与陶瓷环之间的直径环形间隙被选择成在特定温度和压力之上提供径向承载接触。 在某些实施方案中,该装置能够获得0.2GPa至2GPa的压力和400℃至1200℃的温度。

    POLYCRYSTALLINE COMPACTS, EARTH-BORING TOOLS INCLUDING SUCH COMPACTS, AND METHODS OF FABRICATING POLYCRYSTALLINE COMPACTS
    17.
    发明申请
    POLYCRYSTALLINE COMPACTS, EARTH-BORING TOOLS INCLUDING SUCH COMPACTS, AND METHODS OF FABRICATING POLYCRYSTALLINE COMPACTS 有权
    聚合物复合材料,包括这种复合材料的接地工具以及制备聚合物复合材料的方法

    公开(公告)号:US20150144407A1

    公开(公告)日:2015-05-28

    申请号:US14090018

    申请日:2013-11-26

    Abstract: A polycrystalline compact includes diamond grains, cubic boron nitride grains, and grains of an additional nitride, carbide, or boride. The additional nitride, carbide, or boride may be aluminum nitride, gallium nitride, silicon nitride, titanium nitride, silicon carbide, titanium carbide, titanium boride, titanium diboride, and/or aluminum boride. The diamond grains, the cubic boron nitride grains, and the grains of the additional nitride, carbide, or boride are intermixed and interbonded to form a polycrystalline material. An earth-boring tool includes a bit body and such a polycrystalline diamond compact secured to the bit body. Methods of fabricating polycrystalline compacts include forming a mixture comprising diamond grains, non-cubic boron nitride grains, and a metal or semimetal; encapsulating the mixture in a container; and subjecting the encapsulated mixture to high-pressure and high-temperature conditions to form a polycrystalline material.

    Abstract translation: 多晶压块包括金刚石晶粒,立方氮化硼晶粒和另外的氮化物,碳化物或硼化物的晶粒。 另外的氮化物,碳化物或硼化物可以是氮化铝,氮化镓,氮化硅,氮化钛,碳化硅,碳化钛,硼化钛,二硼化钛和/或硼化铝。 金刚石晶粒,立方氮化硼晶粒和附加氮化物,碳化物或硼化物的晶粒混合并键合以形成多晶材料。 钻孔工具包括钻头体和固定在钻头体上的这种多晶金刚石砂块。 制造多晶压块的方法包括形成包含金刚石晶粒,非立方氮化硼晶粒和金属或半金属的混合物; 将混合物包封在容器中; 并将包封的混合物经受高压和高温条件以形成多晶材料。

    Method for Hot Isostatic Pressing a Substrate
    18.
    发明申请
    Method for Hot Isostatic Pressing a Substrate 有权
    热等静压基板的方法

    公开(公告)号:US20130032965A1

    公开(公告)日:2013-02-07

    申请号:US13238173

    申请日:2011-09-21

    Abstract: Disclosed is a method for hot isostatic pressing a substrate. At first, a metal container is provided. Powder is filled in the metal container before the metal container is located in an oven. The metal container is subjected to isostatic pressing that includes heating and pressing. Thus, the metal container shrinks and presses on the powder evenly and turns the powder into a nugget. The metal container is moved out of the oven and broken to release the nugget. A substrate is cut from the nugget. With the hot isostatic pressing, the substrate exhibits only a few flaws and is large, fine, homogenous and strong so that the substrate is not vulnerable to deformation in a high-pressure environment.

    Abstract translation: 公开了一种用于热等静压基板的方法。 首先,提供金属容器。 在金属容器位于烤箱中之前,将粉末填充在金属容器中。 对金属容器进行包括加热和压制在内的等静压。 因此,金属容器收缩并均匀地压在粉末上,并将粉末变成熔核。 将金属容器从烘箱中移出并破碎以释放熔核。 从熔核切割基材。 通过热等静压,基板只有少量缺陷,大而细,均匀而坚固,因此基板在高压环境下不易变形。

    HIGH PRESSURE APPARATUS AND METHOD FOR NITRIDE CRYSTAL GROWTH
    20.
    发明申请
    HIGH PRESSURE APPARATUS AND METHOD FOR NITRIDE CRYSTAL GROWTH 审中-公开
    高压装置和氮化物晶体生长方法

    公开(公告)号:US20100147210A1

    公开(公告)日:2010-06-17

    申请号:US12334418

    申请日:2008-12-12

    Inventor: MARK P. D'EVELYN

    Abstract: An improved high pressure apparatus and related methods for processing supercritical fluids. In a specific embodiment, the present apparatus includes a capsule, a release sleeve, a heater, at least one ceramic segment or ring but can be multiple segments or rings, optionally, with one or more scribe marks and/or cracks present. In a specific embodiment, the apparatus optionally has a metal sleeve containing each ceramic ring. The apparatus also has a high-strength enclosure, end flanges with associated insulation, and a power control system. In a specific embodiment, the apparatus is capable of accessing pressures and temperatures of 0.2-2 GPa and 400-1200° C., respectively. Following a run, the release sleeve may be at least partially dissolved or etched to facilitate removal of the capsule from the apparatus.

    Abstract translation: 一种用于加工超临界流体的改进的高压装置和相关方法。 在具体实施例中,本装置包括胶囊,释放套筒,加热器,至少一个陶瓷片段或环,但可以是多个片段或环,任选地,存在一个或多个划痕和/或裂纹。 在具体实施例中,该装置可选地具有包含每个陶瓷环的金属套筒。 该设备还具有高强度外壳,具有相关绝缘的端部法兰和电源控制系统。 在具体实施例中,该装置能够分别访问0.2-2GPa和400-1200℃的压力和温度。 在运行之后,释放套筒可以至少部分地溶解或蚀刻以便于从装置中取出胶囊。

Patent Agency Ranking