公开(公告)号：US20130157005A1

公开(公告)日：2013-06-20

申请号：US13331582

申请日：2011-12-20

Applicant: Fang Liu ,  Kuang Yang

Inventor： Fang Liu ,  Kuang Yang

IPC: B32B3/30 ,  B05D3/10

CPC classification number: B81B3/001 ,  B81B3/0005 ,  B81B3/0018 ,  B81C2201/112 ,  Y10T428/24355 ,  Y10T428/24521

Abstract: An array of microbumps with a layer or coating of non-superhydrophobic material yields a superhydrophobic surface, and may also have a contact angle hysteresis of 15 degrees or less. A surface with such an array may therefore be rendered superhydrophobic even though the surface structure and materials are not, by themselves, superhydrophobic.

Abstract translation: 具有非超疏水材料层或涂层的微丸阵列产生超疏水表面，并且还可具有15度或更小的接触角滞后。 因此，即使表面结构和材料本身不是超疏水的，具有这种阵列的表面也可能变得超疏水。

公开(公告)号：US08398865B2

公开(公告)日：2013-03-19

申请号：US12501009

申请日：2009-07-10

Applicant: Rudolf Dinger ,  Thierry Ravenel

Inventor： Rudolf Dinger ,  Thierry Ravenel

IPC: C23F1/00

CPC classification number: B81C99/008 ,  B81B2201/035 ,  B81C1/00674 ,  B81C2201/112 ,  G04B13/02 ,  G04D3/0069 ,  Y10T29/49579

Abstract: A method of manufacturing a mechanical part includes the steps of providing a micro-machinable substrate; etching a pattern which includes the part through the entire substrate using photolithography; mounting the etched substrate on a support so as to leave the top and bottom surfaces of said substrate accessible for coating; depositing a tribological quality improving coating of on the outer surface of the part; and releasing the part from the substrate.

Abstract translation: 制造机械部件的方法包括提供可微加工的基板的步骤; 使用光刻法蚀刻通过整个基板包括该部分的图案; 将蚀刻的基板安装在支撑件上，以便使所述基板的顶表面和底表面可接近以进行涂覆; 在部件的外表面上沉积摩擦学质量改进涂层; 并从基底释放该部分。

公开(公告)号：US08395837B2

公开(公告)日：2013-03-12

申请号：US11734458

申请日：2007-04-12

Applicant: Hongqin Shi ,  Gregory Schaadt ,  James C. Dunphy ,  Dmitri Simonian ,  John D. Porter

Inventor： Hongqin Shi ,  Gregory Schaadt ,  James C. Dunphy ,  Dmitri Simonian ,  John D. Porter

IPC: G02B26/00

CPC classification number: B81B3/0005 ,  B81B2201/042 ,  B81C2201/112 ,  G02B26/0833 ,  H01L21/02046 ,  H01L21/02164 ,  H01L21/3121

Abstract: A releasing and post-releasing method for making a micromirror device and a micromirror array device are disclosed herein. The releasing method removes the sacrificial materials in the micromirror and micromirror array so as to enabling movements of the movable elements in the micromirror and micromirror array device. The post-releasing method is applied to improve the performance and quality of the released micromirrors and micromirror array devices.

Abstract translation: 本文公开了用于制造微镜器件和微镜阵列器件的释放和释放方法。 释放方法去除了微反射镜和微镜阵列中的牺牲材料，以便使得微镜和微镜阵列器件中的可移动元件能够移动。 应用后释放方法来提高释放的微镜和微镜阵列器件的性能和质量。

公开(公告)号：US20120313189A1

公开(公告)日：2012-12-13

申请号：US13489380

申请日：2012-06-05

Applicant: Kegang HUANG ,  Martin LIM ,  Xiang LI

Inventor： Kegang HUANG ,  Martin LIM ,  Xiang LI

IPC: H01L29/84 ,  H01L21/02

CPC classification number: B81C1/00238 ,  B81B2203/058 ,  B81C2201/112

Abstract: A method and apparatus are disclosed for reducing stiction in MEMS devices. The method comprises patterning a CMOS wafer to expose Titanium-Nitride (TiN) surface for a MEMS stop and patterning the TiN to form a plurality of stop pads on the top metal aluminum surface of the CMOS wafer. The method is applied for a moveable MEMS structure bonded to a CMOS wafer. The TiN surface and/or plurality of stop pads minimize stiction between the MEMS structure and the CMOS wafer. Further, the TiN film on top of aluminum electrode suppresses the formation of aluminum hillocks which effects the MEMS structure movement.

Abstract translation: 公开了一种用于减少MEMS器件中的静摩擦的方法和装置。 该方法包括图案化CMOS晶片以暴露用于MEMS停止的氮化钛（TiN）表面，并且图案化TiN以在CMOS晶片的顶部金属铝表面上形成多个停止焊盘。 该方法适用于结合到CMOS晶片的可移动MEMS结构。 TiN表面和/或多个阻挡垫使MEMS结构和CMOS晶片之间的极限最小化。 此外，铝电极顶部的TiN膜抑制影响MEMS结构运动的铝质小丘的形成。

公开(公告)号：US08237296B2

公开(公告)日：2012-08-07

申请号：US12796162

申请日：2010-06-08

Applicant: Mehmet Hancer

Inventor： Mehmet Hancer

IPC: H01L23/29

CPC classification number: B81C1/00269 ,  B81C2201/0181 ,  B81C2201/112 ,  B81C2203/0118

Abstract: Organic anti-stiction coatings such as, for example, hydrocarbon and fluorocarbon based self-assembled organosilanes and siloxanes applied either in solvent or via chemical vapor deposition, are selectively etched using a UV-Ozone (UVO) dry etching technique in which the portions of the organic anti-stiction coating to be etched are exposed simultaneously to multiple wavelengths of ultraviolet light that excite and dissociate organic molecules from the anti-stiction coating and generate atomic oxygen from molecular oxygen and ozone so that the organic molecules react with atomic oxygen to form volatile products that are dissipated, resulting in removal of the exposed portions of the anti-stiction coating. A hybrid etching process using heat followed by UVO exposure may be used. A shadow mask (e.g., of glass or quartz), a protective material layer, or other mechanism may be used to selective expose the portions of the anti-stiction coating to be UVO etched. Such selective UVO etching may be used, for example, to expose wafer bond lines prior to wafer-to-wafer bonding in order to increase bond shear and adhesion strength, to expose bond pads in preparation for electrical or other connections, or for general removal of anti-stiction coating materials from metal or other material surfaces. One specific embodiment uses two wavelengths of ultraviolet light, one at around 184.9 nm and the other at around 253.7 nm.

Abstract translation: 使用UV-臭氧（UVO）干蚀刻技术选择性地蚀刻有机抗静电涂层，例如在溶剂中或通过化学气相沉积施加的烃和氟碳基自组装有机硅烷和硅氧烷，其中部分 待蚀刻的有机抗静电涂层同时暴露于多个波长的紫外线，其激发和解离有机分子与抗静电涂层，并从分子氧和臭氧产生原子氧，使得有机分子与原子氧反应形成 挥发的产物被消散，导致去除抗静电涂层的暴露部分。 可以使用使用热量然后UVO曝光的混合蚀刻工艺。 可以使用荫罩（例如，玻璃或石英），保护材料层或其它机构来选择性地将抗静电涂层的部分暴露于UVO蚀刻。 可以使用这种选择性UVO蚀刻，例如在晶片到晶片接合之前暴露晶片接合线，以增加键合剪切和粘附强度，以暴露接合焊盘以准备电气或其它连接，或用于一般去除 的抗静电涂层材料从金属或其他材料表面。 一个具体实施方案使用两个波长的紫外光，一个在约184.9nm，另一个在约253.7nm。

公开(公告)号：US20120148870A1

公开(公告)日：2012-06-14

申请号：US12964347

申请日：2010-12-09

Applicant: Ping-Yin Liu ,  Li-Cheng Chu ,  Hung-Hua Lin ,  Shang-Ying Tsai ,  Yuan-Chih Hsieh ,  Jung-Huei Peng ,  Lan-Lin Chao ,  Chia-Shiung Tsai ,  Chun-Wen Cheng

Inventor： Ping-Yin Liu ,  Li-Cheng Chu ,  Hung-Hua Lin ,  Shang-Ying Tsai ,  Yuan-Chih Hsieh ,  Jung-Huei Peng ,  Lan-Lin Chao ,  Chia-Shiung Tsai ,  Chun-Wen Cheng

IPC: B32B15/01 ,  B23K1/20 ,  B32B15/04

CPC classification number: B81C1/00269 ,  B32B7/12 ,  B32B15/043 ,  B32B15/20 ,  B32B2255/24 ,  B32B2307/746 ,  B32B2457/00 ,  B81B3/0005 ,  B81C2201/112 ,  Y10T428/12674 ,  Y10T428/12708 ,  Y10T428/12736 ,  Y10T428/12986

Abstract: A bond free of an anti-stiction layer and bonding method is disclosed. An exemplary method includes forming a first bonding layer; forming an interlayer over the first bonding layer; forming an anti-stiction layer over the interlayer; and forming a liquid from the first bonding layer and interlayer, such that the anti-stiction layer floats over the first bonding layer. A second bonding layer can be bonded to the first bonding layer while the anti-stiction layer floats over the first bonding layer, such that a bond between the first and second bonding layers is free of the anti-stiction layer.

Abstract translation: 公开了没有抗静电层和粘合方法的键。 一种示例性方法包括形成第一粘合层; 在所述第一接合层上形成中间层; 在中间层上形成抗静电层; 以及从所述第一接合层和中间层形成液体，使得所述抗静电层浮在所述第一接合层上。 第二接合层可以结合到第一接合层，同时抗静电层漂浮在第一接合层上，使得第一和第二接合层之间的接合没有抗静电层。

公开(公告)号：US07952786B2

公开(公告)日：2011-05-31

申请号：US12108030

申请日：2008-04-23

Applicant: Dongmin Chen ,  Fulin Xiong

Inventor： Dongmin Chen ,  Fulin Xiong

IPC: G02B26/00 ,  G02B26/08 ,  G02F1/29

CPC classification number: G02B1/14 ,  B81B3/0005 ,  B81B2201/042 ,  B81C1/0096 ,  B81C2201/112 ,  B82Y30/00 ,  G02B21/32 ,  G02B27/0006

Abstract: One embodiment of an micromechanical device includes a first contact surface, a moveable component having a second contact surface, and a coating of liquid or solid lubricant on at least one of the contact surfaces, where the second contact surface interacts with the first contact surface during device operation, and a gas-phase lubricant is disposed between the first contact surface and the second contact surface, where the gas-phase lubricant is adapted to increase the usable lifetime of the liquid or solid lubricant coating on the contact surfaces. One advantage of the disclosed device is that a gas-phase lubricant has a high diffusion rate and, therefore, is self-replenishing, meaning that it can quickly move back into a contact region after being physically displaced from the region by the contacting surfaces of the device during operation. Consequently, the gas-phase lubricant used with conventional solid or liquid lubricants is more reliable than solid or liquid lubricants used alone in preventing stiction-related device failures.

Abstract translation: 微机械装置的一个实施例包括第一接触表面，具有第二接触表面的可移动部件和在至少一个接触表面上的液体或固体润滑剂涂层，其中第二接触表面在第一接触表面与第一接触表面相互作用 装置操作，并且气相润滑剂设置在第一接触表面和第二接触表面之间，其中气相润滑剂适于增加接触表面上的液体或固体润滑剂涂层的使用寿命。 所公开的装置的一个优点是气相润滑剂具有高扩散速率，因此是自补充的，这意味着它可以在通过接触区域的接触表面物理移位之后迅速地移回接触区域 该设备在运行期间。 因此，与常规固体或液体润滑剂一起使用的气相润滑剂比单独使用的固体或液体润滑剂更可靠，以防止与静脉相关的装置故障。

公开(公告)号：US07927423B1

公开(公告)日：2011-04-19

申请号：US11136922

申请日：2005-05-25

Applicant: Kenneth A. Abbott

Inventor： Kenneth A. Abbott

IPC: C23C16/22

CPC classification number: C23C14/564 ,  B03C3/017 ,  B05D1/185 ,  B05D1/60 ,  B81B3/0005 ,  B81B2201/042 ,  B81C2201/112 ,  C23C14/24 ,  C23C16/4402 ,  C23C16/45568 ,  C23C16/45578

Abstract: A vapor deposition system includes a filter-diffuser device connected to a vapor inlet within a vacuum chamber for simultaneously filtering inflowing vapor to remove particulate matter while injecting vapor containing perfluordecanoic acid (PFDA) into the chamber through radially arranged porous metal filters to enable the deposition of a uniform monolayer of PFDA molecules onto the surfaces of a micromechanical device, such as a digital micromirror device.

Abstract translation: 气相沉积系统包括连接到真空室内的蒸汽入口的过滤器 - 扩散器装置，用于同时过滤流入的蒸气以除去颗粒物质，同时通过径向布置的多孔金属过滤器将含有丙二酸（PFDA）的蒸汽喷射到室中，以使沉积 的PFDA分子的均匀单层到微机械装置的表面上，例如数字微镜装置。

公开(公告)号：US20100314724A1

公开(公告)日：2010-12-16

申请号：US12796162

申请日：2010-06-08

Applicant: Mehmet Hancer

Inventor： Mehmet Hancer

IPC: H01L21/302 ,  H01L23/28

CPC classification number: B81C1/00269 ,  B81C2201/0181 ,  B81C2201/112 ,  B81C2203/0118

Abstract: Organic anti-stiction coatings such as, for example, hydrocarbon and fluorocarbon based self-assembled organosilanes and siloxanes applied either in solvent or via chemical vapor deposition, are selectively etched using a UV-Ozone (UVO) dry etching technique in which the portions of the organic anti-stiction coating to be etched are exposed simultaneously to multiple wavelengths of ultraviolet light that excite and dissociate organic molecules from the anti-stiction coating and generate atomic oxygen from molecular oxygen and ozone so that the organic molecules react with atomic oxygen to form volatile products that are dissipated, resulting in removal of the exposed portions of the anti-stiction coating. A hybrid etching process using heat followed by UVO exposure may be used. A shadow mask (e.g., of glass or quartz), a protective material layer, or other mechanism may be used to selective expose the portions of the anti-stiction coating to be UVO etched. Such selective UVO etching may be used, for example, to expose wafer bond lines prior to wafer-to-wafer bonding in order to increase bond shear and adhesion strength, to expose bond pads in preparation for electrical or other connections, or for general removal of anti-stiction coating materials from metal or other material surfaces. One specific embodiment uses two wavelengths of ultraviolet light, one at around 184.9 nm and the other at around 253.7 nm.

Abstract translation: 使用UV-臭氧（UVO）干蚀刻技术选择性地蚀刻有机抗静电涂层，例如在溶剂中或通过化学气相沉积施加的烃和氟碳基自组装有机硅烷和硅氧烷，其中部分 待蚀刻的有机抗静电涂层同时暴露于多个波长的紫外线，其激发和解离有机分子与抗静电涂层，并从分子氧和臭氧产生原子氧，使得有机分子与原子氧反应形成 挥发的产物被消散，导致去除抗静电涂层的暴露部分。 可以使用使用热量然后UVO曝光的混合蚀刻工艺。 可以使用荫罩（例如，玻璃或石英），保护材料层或其它机构来选择性地将抗静电涂层的部分暴露于UVO蚀刻。 可以使用这种选择性UVO蚀刻，例如在晶片到晶片接合之前暴露晶片接合线，以增加键合剪切和粘附强度，以暴露接合焊盘以准备电气或其它连接，或用于一般去除 的抗静电涂层材料从金属或其他材料表面。 一个具体实施方案使用两个波长的紫外光，一个在约184.9nm，另一个在约253.7nm。

公开(公告)号：US07738158B2

公开(公告)日：2010-06-15

申请号：US12163660

申请日：2008-06-27

Applicant: Bangalore R. Natarajan ,  Kasra Khazeni ,  David Heald ,  Rihui He ,  Sriram Akella ,  Evgeni Gousev

Inventor： Bangalore R. Natarajan ,  Kasra Khazeni ,  David Heald ,  Rihui He ,  Sriram Akella ,  Evgeni Gousev

IPC: G02B26/00 ,  G02F1/03

CPC classification number: B81C1/0092 ,  B81B3/0005 ,  B81B2201/047 ,  B81C2201/112 ,  G02B26/001

Abstract: Methods, devices, and systems provide MEMS devices exhibiting at least one of reduced stiction, reduced hydrophilicity, or reduced variability of certain electrical characteristics using MEMS devices treated with water vapor. The treatment is believed to form one or more passivated surfaces on the interior and/or exterior of the MEMS devices. Relatively gentle temperature and pressure conditions ensure modification of surface chemistry without excessive water absorption after removal of sacrificial material to release the MEMS devices.

Abstract translation: 方法，装置和系统提供使用用水蒸汽处理的MEMS装置展现降低的静摩擦，降低的亲水性或某些电气特性的变化性中的至少一个的MEMS装置。 认为处理在MEMS器件的内部和/或外部形成一个或多个钝化表面。 相对温和的温度和压力条件确保在去除牺牲材料以释放MEMS器件之后，不改变表面化学性质而不过度吸水。