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    PRIMARY DISTILLATION BORON REDUCTION
    11.
    发明申请
    PRIMARY DISTILLATION BORON REDUCTION 审中-公开
    主要蒸馏还原硼

    公开(公告)号：US20160152481A1

    公开(公告)日：2016-06-02

    申请号：US14556640

    申请日：2014-12-01

    申请人： Mitsubishi Polycrystalline Silicon America Corporation (MIPSA)

    发明人： April Ashworth ,  Michael W. Keevan

    IPC分类号： C01B33/039 ,  B01J8/24 ,  C01B33/021

    CPC分类号： C01B33/039 ,  C01B33/021 ,  C01B33/035 ,  C01B33/10763 ,  C01B33/10778

    摘要： The present invention relates to an apparatus and a method for producing polycrystalline silicon having a reduced amount of boron compound impurities. Especially, the boron compounds are removed from the process for producing polycrystalline silicon, while the trichlorosilane is purified by distillation. The invention feeds condensed liquid trichlorosilane into a primary distillation tower below the liquid level inside the primary distillation tower thereby scrubbing the boron impurities upon contact inside the primary distillation tower. There result is trichlorosilane leaving the primary distillation tower with total amount of boron at least 10 times less.

    摘要翻译： 本发明涉及具有减少量的硼化合物杂质的多晶硅的制造装置和方法。 特别是从制造多晶硅的方法中除去硼化合物，同时通过蒸馏纯化三氯硅烷。 本发明将冷凝的液体三氯硅烷进料到初级蒸馏塔内部的液面之下的一级蒸馏塔中，从而在一级蒸馏塔内部接触时洗涤硼杂质。 结果是三氯硅烷离开主蒸馏塔，总硼量至少少于10倍。

    IMPROVING OPERATION OF FLUIDIZED BED REACTORS BY OPTIMIZING TEMPERATURE GRADIENTS VIA PARTICLE SIZE DISTRIBUTION CONTROL
    14.
    发明申请
    IMPROVING OPERATION OF FLUIDIZED BED REACTORS BY OPTIMIZING TEMPERATURE GRADIENTS VIA PARTICLE SIZE DISTRIBUTION CONTROL 有权
    通过粒度分布控制优化温度梯度来改善流化床反应器的运行

    公开(公告)号：US20150329366A1

    公开(公告)日：2015-11-19

    申请号：US14650959

    申请日：2013-12-27

    申请人： SunEdison, Inc.

    发明人： Jia Wei CHEW ,  Baisheng ZOU

    IPC分类号： C01B33/021

    CPC分类号： C01B33/021 ,  B01J8/1809 ,  B01J2208/00017 ,  B01J2208/00672 ,  B01J2219/00247

    摘要： A method of improving the operation of polysilicon fluidized bed reactors is disclosed. The present disclosure is directed to the optimization of axial temperature gradients in gas-solid fluidized bed systems. Varying the width of the particle size distribution in the reactor alters the temperature gradient within the reactor, thereby providing a means of a better control of internal temperature profiles and hence better reactor performance.

    摘要翻译： 公开了一种改善多晶硅流化床反应器运行的方法。 本发明涉及气固流化床系统中轴向温度梯度的优化。 改变反应器中的粒度分布的宽度改变反应器内的温度梯度，从而提供更好地控制内部温度分布并因此提高反应器性能的手段。

    METHOD AND APPARATUS FOR CONSOLIDATION OF GRANULAR SILICON AND MEASURING NON-METALS CONTENT
    15.
    发明申请
    METHOD AND APPARATUS FOR CONSOLIDATION OF GRANULAR SILICON AND MEASURING NON-METALS CONTENT 有权
    用于合成硅砂和测量非金属含量的方法和装置

    公开(公告)号：US20150225246A1

    公开(公告)日：2015-08-13

    申请号：US14178103

    申请日：2014-02-11

    申请人： REC Silicon Inc

    发明人： Sefa Yilmaz ,  Theodore F. Ciszek ,  Matthew J. Miller ,  Stein Julsrud

    IPC分类号： C01B33/021 ,  G01N21/3563

    CPC分类号： C01B33/021 ,  C01B32/384 ,  C01B33/02 ,  C01B33/035 ,  C01B33/037 ,  G01N21/3563 ,  G01N2021/3595

    摘要： Apparatus and methods for consolidating granular silicon and determining trace elements content of the consolidated silicon are disclosed. Silicon granules are placed in a vessel, and a silicon slug of known purity is embedded at least partially in the granules. The slug is preheated to a temperature sufficient to couple with an induction heater. As the silicon slug melts, silicon granules adjacent the molten silicon also melt. The vessel passes through an induction coil to successively inductively heat and melt regions of the silicon granules from the leading end to the trailing end with each region solidifying as the molten silicon exits the induction coil to provide a multicrystalline silicon ingot. The multicrystalline silicon ingot is sliced into wafers, which are analyzed by low-temperature Fourier transform infrared spectroscopy to determine levels of trace elements in the ingot.

    摘要翻译： 公开了用于固结颗粒状硅并确定固结硅的微量元素含量的装置和方法。 将硅颗粒放置在容器中，并且将至少部分地嵌入颗粒中的已知纯度的硅团块。 将坯料预热到足以与感应加热器相连的温度。 当硅团熔化时，与熔融硅相邻的硅颗粒也会熔化。 容器通过感应线圈，以随着熔融硅离开感应线圈而使硅颗粒的前端到后端逐渐地感应加热和熔融，每个区域都固化，从而提供多晶硅锭。 将多晶硅锭切成晶片，通过低温傅里叶变换红外光谱法分析晶锭中微量元素的含量。

    METHOD FOR PRODUCING SILICON METAL AND POROUS CARBON
    18.
    发明申请
    METHOD FOR PRODUCING SILICON METAL AND POROUS CARBON 有权
    生产硅金属和多孔碳的方法

    公开(公告)号：US20150104370A1

    公开(公告)日：2015-04-16

    申请号：US14408006

    申请日：2013-05-22

    申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.

    发明人： Shinji Ishikawa ,  Toru Adachi ,  Taiichiro Yamashita

    IPC分类号： C01B33/033 ,  C01B31/02

    CPC分类号： C01B33/033 ,  C01B32/00 ,  C01B32/05 ,  C01B33/021

    摘要： The method for producing silicon metal and porous carbon from rice hulls is provided. The method comprises a first step S1 of producing a rice hull charcoal M2 containing SiO2 and C by heat treatment of rice hulls M1; a second step S4 of exposing the rice hull charcoal M4 to at least any one of heated first inert gas G2 or reducing gas to produce SiC; a third step S5 of exposing SiC to a heating atmosphere containing Cl2 gas to produce SiCl4 and porous carbon P1; a fourth step S7 of reacting SiCl4 and Zn to produce silicon metal P2 and ZnCl2; and a fifth step S9 of electrolyzing ZnCl2 to produce Zn and Cl2 gas. The Cl2 gas in the fifth step S9 is used in the third step S5, and Zn in the fifth step S9 is used in the fourth step S7.

    摘要翻译： 提供了从稻壳生产硅金属和多孔碳的方法。 该方法包括：通过热处理稻壳M1生产含有SiO 2和C的稻壳炭M2的第一步骤S1; 将米壳炭M4暴露于加热的第一惰性气体G2或还原气体中的至少一种以产生SiC的第二步骤S4; 将SiC暴露于含有Cl 2气体的加热气氛中以产生SiCl 4和多孔碳P1的第三步骤S5; 使SiCl4和Zn反应生成硅金属P2和ZnCl 2的第四步骤S7; 以及电解ZnCl 2以产生Zn和Cl 2气体的第五步骤S9。 在第五步骤S9中使用第五步骤S9中的Cl2气体，在第四步骤S7中使用第五步骤S9中的Zn。