Abstract:
Methods and systems for x-ray based semiconductor metrology utilizing a broadband, soft X-ray illumination source are described herein. A laser produced plasma (LPP) light source generates high brightness, broadband, soft x-ray illumination. The LPP light source directs a highly focused, short duration laser source to a non-metallic droplet target in a liquid or solid state. In one example, a droplet generator dispenses a sequence of nominally 50 micron droplets of feed material at a rate between 50 and 400 kilohertz. In one aspect, the duration of each pulse of excitation light is less than one nanosecond. In some embodiments, the duration of each pulse of excitation light is less than 0.5 nanoseconds. In some embodiments, the LPP light source includes a gas separation system that separates unspent feed material from other gases in the plasma chamber and provides the separated feed material back to the droplet generator.
Abstract:
Methods and systems for calibrating the location of x-ray beam incidence onto a specimen in an x-ray scatterometry metrology system are described herein. The precise location of incidence of the illumination beam on the surface of the wafer is determined based on occlusion of the illumination beam by two or more occlusion elements. The center of the illumination beam is determined based on measured values of transmitted flux and a model of the interaction of the beam with each occlusion element. The position of the axis of rotation orienting a wafer over a range of angles of incidence is adjusted to align with the surface of wafer and intersect the illumination beam at the measurement location. A precise offset value between the normal angle of incidence of the illumination beam relative to the wafer surface and the zero angle of incidence as measured by the specimen positioning system is determined.
Abstract:
An X-ray diffraction apparatus including an X-ray detector that is configured to detect diffracted X-rays diffracted from a sample when a surface of the sample is irradiated with X-rays, a counter arm which rotates around a rotation center axis set within the surface of the sample while the X-ray detector is installed on the counter arm, and a plate-like X-ray shielding member that is installed on the counter arm and rotated together with the X-ray detector.
Abstract:
Disclosed herein are embodiments of gold nanoparticles and methods of making and using the gold nanoparticles. The disclosed gold nanoparticles have core sizes and polydispersities controlled by the methods of making the gold nanoparticles. In some embodiments, the methods of making the gold nanoparticles can concern using flow reactors and reaction conditions controlled to make gold nanoparticles having a desired core size. The gold nanoparticles disclosed herein also comprise various ligands that can be used to facilitate the use of the gold nanoparticles in a variety of applications.
Abstract:
Certain films comprising polypropylene and silicone that are uniaxially stretched at stretching temperatures below 70° C. have desirable aesthetic effects.
Abstract:
Disclosed are apparatus and methods for performing small angle x-ray scattering metrology. This system includes an x-ray source for generating x-rays and illumination optics for collecting and reflecting or refracting a portion of the generated x-rays towards a particular focus point on a semiconductor sample in the form of a plurality of incident beams at a plurality of different angles of incidence (AOIs). The system further includes a sensor for collecting output x-ray beams that are scattered from the sample in response to the incident beams on the sample at the different AOIs and a controller configured for controlling operation of the x-ray source and illumination optics and receiving the output x-rays beams and generating an image from such output x-rays.
Abstract:
A structure of interest is irradiated with radiation for example in the x-ray or EUV waveband, and scattered radiation is detected by a detector (306). A processor (308) calculates a property such as linewidth (CD) by simulating interaction of radiation with a structure and comparing the simulated interaction with the detected radiation. A layered structure model (600, 610) is used to represent the structure in a numerical method. The structure model defines for each layer of the structure a homogeneous background permittivity and for at least one layer a non-homogeneous contrast permittivity. The method uses Maxwell's equation in Born approximation, whereby a product of the contrast permittivity and the total field is approximated by a product of the contrast permittivity and the background field. A computation complexity is reduced by several orders of magnitude compared with known methods.
Abstract:
A method for evaluating the crosslink concentration in a crosslinked rubber is provided. The present invention relates to a method for evaluating the crosslink concentration in a crosslinked rubber by small-angle X-ray scattering or small-angle neutron scattering using measurement samples prepared by swelling the crosslinked rubber to different degrees of swelling.
Abstract:
A method of evaluating the neutron scattering length density, capable of accurately determining the neutron scattering length density is provided. The method evaluates the neutron scattering length density of scatterers in a material, including determining the neutron scattering length density based on a scattering intensity curve obtained by neutron scattering measurement, with use of a scattering intensity curve obtained by X-ray scattering measurement.
Abstract:
The disclosure provides an apparatus for amplifying scattering intensity during tSAXS measurements. The apparatus includes an enhancement grating object and a placement mechanism. The enhancement grating object is positioned within a longitudinal coherence length of an incident X-ray from a target object. The placement mechanism is capable of placing the enhancement grating object with nanometer precision with respect to the target object in both a lateral and a longitudinal directions.