X-Ray Metrology System With Broadband Laser Produced Plasma Illuminator

    公开(公告)号:US20190215940A1

    公开(公告)日:2019-07-11

    申请号:US15867633

    申请日:2018-01-10

    Abstract: Methods and systems for x-ray based semiconductor metrology utilizing a broadband, soft X-ray illumination source are described herein. A laser produced plasma (LPP) light source generates high brightness, broadband, soft x-ray illumination. The LPP light source directs a highly focused, short duration laser source to a non-metallic droplet target in a liquid or solid state. In one example, a droplet generator dispenses a sequence of nominally 50 micron droplets of feed material at a rate between 50 and 400 kilohertz. In one aspect, the duration of each pulse of excitation light is less than one nanosecond. In some embodiments, the duration of each pulse of excitation light is less than 0.5 nanoseconds. In some embodiments, the LPP light source includes a gas separation system that separates unspent feed material from other gases in the plasma chamber and provides the separated feed material back to the droplet generator.

    Calibration Of A Small Angle X-Ray Scatterometry Based Metrology System

    公开(公告)号:US20180113084A1

    公开(公告)日:2018-04-26

    申请号:US15789992

    申请日:2017-10-21

    Abstract: Methods and systems for calibrating the location of x-ray beam incidence onto a specimen in an x-ray scatterometry metrology system are described herein. The precise location of incidence of the illumination beam on the surface of the wafer is determined based on occlusion of the illumination beam by two or more occlusion elements. The center of the illumination beam is determined based on measured values of transmitted flux and a model of the interaction of the beam with each occlusion element. The position of the axis of rotation orienting a wafer over a range of angles of incidence is adjusted to align with the surface of wafer and intersect the illumination beam at the measurement location. A precise offset value between the normal angle of incidence of the illumination beam relative to the wafer surface and the zero angle of incidence as measured by the specimen positioning system is determined.

    Small-angle scattering X-ray metrology systems and methods

    公开(公告)号:US09846132B2

    公开(公告)日:2017-12-19

    申请号:US14515322

    申请日:2014-10-15

    CPC classification number: G01N23/201 G01N2033/0095

    Abstract: Disclosed are apparatus and methods for performing small angle x-ray scattering metrology. This system includes an x-ray source for generating x-rays and illumination optics for collecting and reflecting or refracting a portion of the generated x-rays towards a particular focus point on a semiconductor sample in the form of a plurality of incident beams at a plurality of different angles of incidence (AOIs). The system further includes a sensor for collecting output x-ray beams that are scattered from the sample in response to the incident beams on the sample at the different AOIs and a controller configured for controlling operation of the x-ray source and illumination optics and receiving the output x-rays beams and generating an image from such output x-rays.

    Method of evaluating neutron scattering length density
    19.
    发明授权
    Method of evaluating neutron scattering length density 有权
    评估中子散射​​长度密度的方法

    公开(公告)号:US09395314B2

    公开(公告)日:2016-07-19

    申请号:US14268454

    申请日:2014-05-02

    Inventor: Ryo Mashita

    CPC classification number: G01N23/202 G01N23/201

    Abstract: A method of evaluating the neutron scattering length density, capable of accurately determining the neutron scattering length density is provided. The method evaluates the neutron scattering length density of scatterers in a material, including determining the neutron scattering length density based on a scattering intensity curve obtained by neutron scattering measurement, with use of a scattering intensity curve obtained by X-ray scattering measurement.

    Abstract translation: 提供了一种能够准确地确定中子散射长度密度的中子散射长度密度的评估方法。 该方法通过使用通过X射线散射测量获得的散射强度曲线来评估材料中散射体的中子散射长度密度,包括基于通过中子散射测量获得的散射强度曲线确定中子散射长度密度。

    Apparatus for amplifying intensity during transmission small angle—X-ray scattering measurements
    20.
    发明授权
    Apparatus for amplifying intensity during transmission small angle—X-ray scattering measurements 有权
    用于在透射小角度X射线散射测量期间放大强度的装置

    公开(公告)号:US09297772B2

    公开(公告)日:2016-03-29

    申请号:US14246702

    申请日:2014-04-07

    Inventor: Wei-En Fu Wen-Li Wu

    CPC classification number: G01N23/201

    Abstract: The disclosure provides an apparatus for amplifying scattering intensity during tSAXS measurements. The apparatus includes an enhancement grating object and a placement mechanism. The enhancement grating object is positioned within a longitudinal coherence length of an incident X-ray from a target object. The placement mechanism is capable of placing the enhancement grating object with nanometer precision with respect to the target object in both a lateral and a longitudinal directions.

    Abstract translation: 本公开提供了一种用于在tSAXS测量期间放大散射强度的装置。 该装置包括增强光栅对象和放置机构。 增强光栅对象位于来自目标对象的入射X射线的纵向相干长度内。 放置机构能够在横向和纵向方向上相对于目标物体放置具有纳米精度的增强光栅对象。

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