公开(公告)号：US3895430A

公开(公告)日：1975-07-22

申请号：US39892873

申请日：1973-09-20

申请人： GEN ELECTRIC

发明人： WILSON RONALD H ,  GIBBONS MARTIN D ,  BLUMENFELD SAMUEL M

IPC分类号： H01J29/45 ,  H01L21/00 ,  H01L27/00 ,  B01J17/00

CPC分类号： H01L21/00 ,  H01J9/233 ,  H01J29/455 ,  H01L27/00 ,  Y10S148/003 ,  Y10S148/122 ,  Y10S148/172

摘要： Highlight blooming is reduced in semiconductor diode array camera targets by forming electron-hole recombination sites intermediate the diodes. These sites collect excess holes created by intense light images incident on the target and reduce blooming. The recombination sites are formed by selectively irradiating regions of the semiconductor substrate between the diodes and beyond the limits of the depletion region surrounding the reverse-biased diodes. Useful forms of radiation which produce these recombination sites include electron beam and ultraviolet rays.

摘要翻译： 通过在二极管之间形成电子 - 空穴复合位点，在半导体二极管阵列相机目标中突出显现起霜。 这些网站收集了由激光照射到目标上造成的多余的洞，并减少了起霜。 通过在二极管之间选择性地照射半导体衬底的区域并超出围绕反向偏置二极管的耗尽区的极限来形成复合位点。 产生这些重组位点的有用的辐射形式包括电子束和紫外线。

公开(公告)号：US3810796A

公开(公告)日：1974-05-14

申请号：US28515672

申请日：1972-08-31

申请人： TEXAS INSTRUMENTS INC

发明人： BEAN K ,  SKAGGS F ,  HARRAP V

IPC分类号： H01L31/10 ,  H01J9/20 ,  H01J29/45 ,  H01L21/00 ,  H01L23/31 ,  H01L27/00 ,  H01L7/50

CPC分类号： H01L23/3157 ,  H01J9/20 ,  H01J29/455 ,  H01L21/00 ,  H01L27/00 ,  H01L2924/0002 ,  Y10S148/05 ,  Y10S148/051 ,  Y10S148/085 ,  Y10S148/115 ,  Y10S148/117 ,  Y10S148/135 ,  Y10S148/162 ,  Y10S438/977 ,  H01L2924/00

摘要： THE DISCLOSURE RELATES TO A DIELECTRICALLY ISOLATED SILICON DIODE ARRAY VIDICON TARGET WHICH SUBSTANTIALLY ELIMINATES THE LATERAL DIFFUSION SPREAD OF PHOTO CARRIERS, THEREBY PROVIDING A NON-BLOOMING CAMERA PICKUP TUBE.

公开(公告)号：US3792197A

公开(公告)日：1974-02-12

申请号：US3792197D

申请日：1972-07-31

申请人： BELL TELEPHONE LABOR INC

发明人： CHAI S

IPC分类号： H01J29/45 ,  H01L27/00 ,  H04N5/30

CPC分类号： H01J29/455 ,  H01L27/00

摘要： A silicon diode array target structure is disclosed in which light sensitivity is electronically controlled. Photons incident upon a target generate hole (minority carrier) electron pairs. A single large area reversed bias P-N junction structure is formed over the entire image area on the light incident side of a conventional diode array target, and the depletion region created by the reverse bias both controls light sensitivity by impeding the movement of minority carriers toward the diode array target and serves as a sink for the minority carriers generated within the depletion region.

摘要翻译： 公开了一种硅二极管阵列目标结构，其中光敏性被电子控制。 入射到目标上的光子产生空穴（少数载流子）电子对。 在常规二极管阵列靶的光入射侧的整个图像区域上形成单个大面积反向偏置PN结结构，并且由反向偏置产生的耗尽区域通过阻止少数载流子朝向 二极管阵列目标，并用作在耗尽区内产生的少数载流子的汇。

公开(公告)号：US3748549A

公开(公告)日：1973-07-24

申请号：US3748549D

申请日：1972-03-29

申请人： PHILIPS CORP

发明人： MILCH A ,  SINGER B

IPC分类号： H01J29/45 ,  H01L27/00 ,  H01L17/00

CPC分类号： H01J29/455 ,  H01J9/233 ,  H01L27/00 ,  Y10S257/917

摘要： A camera tube employing a silicon target with a diode array which is covered with a resistive layer or sea on the side facing the electron beam. The resistive sea consists of a layer of bismuth oxide which protects the silicon target from damage by xrays while minimizing charge build-up on the insulating layer between diodes which would otherwise prevent beam landing. The resistive sea is covered by a very thin layer of cadmium telluride which stabilizes the Bi2O3 layer and improves its beam acceptance properties.

摘要翻译： 一种使用具有二极管阵列的硅靶的照相机管，其在面向电子束的一侧被电阻层或海覆盖。 电阻海由氧化铋层组成，其保护硅靶免受X射线损伤，同时最小化二极管之间的绝缘层上的电荷积聚，否则这将阻止光束着陆。 电阻式海面被非常薄的碲化镉覆盖，稳定Bi2O3层并提高其光束接受性能。

公开(公告)号：US3746908A

公开(公告)日：1973-07-17

申请号：US3746908D

申请日：1970-08-03

申请人： GEN ELECTRIC

发明人： ENGELER W

IPC分类号： H01J29/45 ,  H01L27/00 ,  H01J31/26

CPC分类号： H01J29/455 ,  H01J9/233 ,  H01L27/00 ,  Y10S148/017 ,  Y10S148/026 ,  Y10S148/05

摘要： An improved electron beam information storage device is disclosed as comprising a target structure having an array of closely spaced diodes with electrically conducting selfregistered projections in contact with the diodes and extending away from the surface of the diode array for intercepting the electron beam and conducting electrons to the diodes thereby preventing an undesirable charge buildup on the surface of target structure. A method for making storage devices by selective epitaxial growth is also disclosed.

摘要翻译： 公开了一种改进的电子束信息存储装置，其包括具有紧密间隔二极管的阵列的目标结构，其具有与二极管接触的导电自对准突起并且远离二极管阵列的表面延伸以截取电子束并导通 电子到二极管，从而防止在目标结构的表面上产生不期望的电荷。 还公开了通过选择性外延生长制备存储器件的方法。

公开(公告)号：US3723278A

公开(公告)日：1973-03-27

申请号：US3723278D

申请日：1971-07-30

申请人： PHILIPS CORP

发明人： LIEBERT R ,  CONKLIN T

IPC分类号： H01J29/45 ,  H01L21/00 ,  H01L21/318 ,  H01L27/00 ,  C23C15/00

CPC分类号： H01L21/00 ,  H01J29/455 ,  H01L21/318 ,  H01L27/00

摘要： A HAFNIUM-TANTALUM NITRIDE LAYER HAVING A COMPOSITION BETWEEN THE MONONITRIDE AND THE DINITRIDE 500-5000 A. THICK IS DEPOSITED ON AN OXIDIZED SILICON SUBSTRATE IN AN ARGON ATOMOSPHERE CONTAINING NITROGEN AT A PARTIAL PRESSURE OF 5-10X10**-3 TORR BY RF SPUTTERING OF HAFNIUM MONONITRIDE AND TANTALUM MONONITRIDE. AFTER SUBSEQUENT ANNEALING SUCH LAYERS HAVE SHEET RESISTIVITIES OF AT LEAST 2X10**13 OHMS/$ AND ARE PARTICLARLY SUITED AS AN ELECTRON DISCHARGE LAYER ON THE OXIDE SURFACE OF A SILICON VIDICON TARGET WAFER, I.E. AS A RESISTIVE SEA.

公开(公告)号：US3664895A

公开(公告)日：1972-05-23

申请号：US3664895D

申请日：1969-06-13

申请人： GEN ELECTRIC

发明人： SCHAEFER DONALD L ,  WILSON RONALD H

IPC分类号： H01J29/45 ,  H01L21/00 ,  H01L27/00 ,  H01L7/44

CPC分类号： H01L21/00 ,  H01J9/233 ,  H01J29/455 ,  H01L27/00 ,  Y10S148/118

摘要： Silicon diode array vidicon targets characterized by a silicon oxide insulator disposed between P-type conductivity regions forming discrete diodes within an N-type conductivity wafer have been made substantially immune to burn-in by the utilization of a 0,1 to 3 micron thick electrically conducting glass layer to leak charge formed on the insulator to the adjacent P-type conductivity regions of the target. Preferably the electronically conducting glass is an alkaline earth metal borate glass containing an oxide of a metal, e.g., iron, vanadium, cobalt, etc., providing ions of both a higher valence state and a lower valence state within the glass to permit regulation of the resistivity of the glass layer during fabrication of the bulk glass. To inhibit crazing of the glass layer while providing superior contact between the glass and the surface of the target, the glass layer is R.F. sputter deposited atop the target employing a sputtering atmosphere, e.g., argon, nitrogen, oxygen, selected to provide the desired resistivity in the deposited glass layer.

摘要翻译： 通过在N型导电晶片内形成分立二极管的P型导电区域之间设置的氧化硅绝缘体的硅二极管阵列视频体目标已被制造为通过利用0.1至3微米厚的电 导电玻璃层将形成在绝缘体上的电荷泄漏到目标的相邻P型导电区域。 优选地，电子导电玻璃是含有金属氧化物（例如铁，钒，钴等）的碱土金属硼酸盐玻璃，其在玻璃中提供更高价态和低价态的离子，以允许调节 在制造大容量玻璃时玻璃层的电阻率。 为了抑制玻璃层的龟裂，同时在玻璃和靶的表面之间提供优异的接触，玻璃层是R.F. 溅射沉积在目标上方，使用溅射气氛，例如氩气，氮气，氧气，被选择以在沉积的玻璃层中提供所需的电阻率。

公开(公告)号：US3615449A

公开(公告)日：1971-10-26

申请号：US3615449D

申请日：1969-09-25

申请人： RCA CORP

发明人： GREENAWAY DAVID LESLIE

IPC分类号： G03F7/20 ,  H01J9/233 ,  H01J29/45 ,  H01L21/027 ,  H01L27/00 ,  H01L27/144 ,  G03C5/00 ,  G02B5/18

CPC分类号： H01L27/1446 ,  G03F7/201 ,  G03F7/70358 ,  H01J9/233 ,  H01J29/455 ,  H01L21/0275 ,  H01L27/00 ,  Y10S359/90

摘要： High area-density arrays, such as diode array vidicon camera tube targets and electron tube electrode screens, are made by photolithographic printing utilizing a photomask diffraction image rather than a photomask shadow for exposing a photoresist masking layer. To form the masking layer, a relatively flat photoresist layer is exposed to a periodic array diffraction image from a photomask. The exposed portions of the layer are removed, leaving an array of unexposed portions. Alternatively, the unexposed portions of the layer may be removed, leaving an array of exposed portions. During the exposure, the layer is oscillated over a distance of essentially one-quarter the wavelength of the light and in a direction substantially perpendicular to the surface of the layer to avoid the appearance of interference fringe patterns after development.

公开(公告)号：US3576392A

公开(公告)日：1971-04-27

申请号：US3576392D

申请日：1968-06-26

申请人： RCA CORP

发明人： HOFSTEIN STEVEN R

IPC分类号： H01J29/45 ,  H01L27/00 ,  H04N3/14

CPC分类号： H01J29/455 ,  H01L27/00 ,  Y10S148/12 ,  Y10S257/917

摘要： A silicon vidicon target comprises an N-type silicon wafer having one surface exposed to incident light, and a large number of discrete P-type regions diffused into the opposite wafer surface, which is scanned by an electron beam. A transparent electrode overlies a transparent insulator disposed on the illuminated wafer surface. The optical sensitivity and spectral response of the target are varied by applying a bias voltage between the transparent electrode and the N-type wafer.

公开(公告)号：US3983574A

公开(公告)日：1976-09-28

申请号：US553717

申请日：1975-02-27

申请人： Hermann Statz ,  Wolfgang M. Feist

发明人： Hermann Statz ,  Wolfgang M. Feist

IPC分类号： H01J29/45 ,  H01L21/00 ,  H01L21/3115 ,  H01L27/00 ,  H01L29/00 ,  H01L29/06 ,  H01L29/78 ,  H01L31/00 ,  H01L31/0216 ,  H01L27/14

CPC分类号： H01L31/02161 ,  H01J29/451 ,  H01J29/455 ,  H01J9/233 ,  H01L21/00 ,  H01L21/31155 ,  H01L27/00 ,  H01L29/00 ,  H01L29/0638 ,  H01L29/78 ,  H01L31/00 ,  H01L31/0216 ,  Y10S257/917

摘要： A semiconductor structure having a surface insulating layer formed as a grid with charges implanted in the insulating material to prevent inversion and, hence, channeling between adjacent semiconductor regions, preferably for use in a non-blooming vidicon. The method of manufacturing such a structure uses ion implantation to create immobile positive charges in a grid pattern in an insulating layer in regions spaced from the interface between the insulating layer and the semiconductor body. The insulating layer is of sufficient thickness that substantially all of the charge sites in the insulating layer are separated from the outer surface of the insulator by a sufficient distance to effectively prevent a negative electric field from reaching into the silicon.

摘要翻译： 具有表面绝缘层的半导体结构，其形成为栅格，电荷注入绝缘材料中，以防止反转，并因此在相邻半导体区之间引导沟道，优选用于非开花的视频体。 制造这种结构的方法使用离子注入来在与绝缘层和半导体本体之间的界面间隔开的区域中的绝缘层中以栅格图案形成固定的正电荷。 绝缘层具有足够的厚度，绝缘层中的基本上所有的电荷位置与绝缘体的外表面分开足够的距离，以有效地防止负电场进入硅。