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26 条记录 (耗时 0.015 秒)

    Method and System for Forming Resonators Over CMOS
    13.
    发明申请
    Method and System for Forming Resonators Over CMOS 有权
    在CMOS上形成谐振器的方法和系统

    公开(公告)号：US20100148880A1

    公开(公告)日：2010-06-17

    申请号：US12333878

    申请日：2008-12-12

    申请人： Arun K. Gupta ,  Lance W. Barron ,  William C. McDonald

    发明人： Arun K. Gupta ,  Lance W. Barron ,  William C. McDonald

    IPC分类号： H03L7/00

    CPC分类号： H03H3/0073 ,  H03H9/2426 ,  H03H2009/02322

    摘要： In accordance with one embodiment of the present disclosure, a semiconductor substrate includes complementary metal-oxide-semiconductor (CMOS) circuitry disposed outwardly from the semiconductor substrate. An electrode is disposed outwardly from the CMOS circuitry. The electrode is electrically coupled to the CMOS circuitry. A resonator is disposed outwardly from the electrode. The resonator is operable to oscillate at a resonance frequency in response to an electrostatic field propagated, at least in part, by the electrode.

    摘要翻译： 根据本公开的一个实施例，半导体衬底包括从半导体衬底向外设置的互补金属氧化物半导体（CMOS）电路。 电极从CMOS电路向外设置。 电极电耦合到CMOS电路。 谐振器从电极向外设置。 谐振器可操作以响应于至少部分地由电极传播的静电场以谐振频率振荡。

    Resonance device
    14.
    发明授权
    Resonance device 有权

    公开(公告)号：US11909375B2

    公开(公告)日：2024-02-20

    申请号：US17195856

    申请日：2021-03-09

    申请人： Murata Manufacturing Co., Ltd.

    发明人： Keiichi Umeda ,  Naoto Yatani ,  Ryota Kawai ,  Yoshihisa Inoue

    IPC分类号： H03H9/02 ,  H03H9/17 ,  H03H9/15

    CPC分类号： H03H9/02244 ,  H03H9/17 ,  H03H2009/02322 ,  H03H2009/02496 ,  H03H2009/155

    摘要： A resonance device is provided for reducing the influence on the resonant frequency of the resonance device of the electric charge borne by an insulating film of a frame. The resonance device includes a resonator including a vibration portion and a frame disposed in at least a part of a vicinity of the vibration portion. The frame includes a holding body and an insulating film, with the holding body holding the vibration portion to vibrate and the insulating film being formed above the holding body. A lower cover is provided having a recess forming at least a part of a space in which the vibration portion vibrates. An inner side surface of the insulating film is disposed at a first distance from an inner surface of a side wall defining the recess.

    High performance tunable filter
    16.
    发明授权
    High performance tunable filter 有权

    公开(公告)号：US11652468B2

    公开(公告)日：2023-05-16

    申请号：US16922471

    申请日：2020-07-07

    申请人： QUALCOMM Incorporated

    发明人： Je-Hsiung Lan ,  Jonghae Kim

    IPC分类号： H03H9/46 ,  H03H9/02

    CPC分类号： H03H9/46 ,  H03H2009/02165 ,  H03H2009/02322

    摘要： Disclosed is a gallium arsenide (GaAs) enabled tunable filter for, e.g., 6 GHz Wi-Fi RF Frontend, with integrated high-performance varactors, metal-insulator-metal (MIM) capacitors, and 3D solenoid inductors. The tunable filter comprises a hyper-abrupt variable capacitor (varactor) high capacitance tuning ratio. The tunable filter also comprises a GaAs substrate in which through-GaAs-vias (TGV) are formed. The varactor along with the MIM capacitors and the 3D inductors is formed in an upper conductive structure on upper surface of the GaAs substrate. Lower conductive structure comprising lower conductors is formed on lower surface of the GaAs substrate. Electrical coupling between the lower and upper conductive structures is provided by the TGVs. The tunable filter can be integrated with radio frequency front end (RFFE) devices.

    MICROELECTROMECHANICAL RESONATOR
    18.
    发明申请
    MICROELECTROMECHANICAL RESONATOR 有权
    微电子谐振器

    公开(公告)号：US20140339963A1

    公开(公告)日：2014-11-20

    申请号：US13897591

    申请日：2013-05-20

    申请人： MURATA ELECTRONICS OY

    发明人： Antti IIHOLA ,  Ville KAAJAKARI ,  Jarmo KEMPPAINEN ,  Pasi KIVINEN ,  Risto MOURUJÄRVI ,  Marcus RINKIÖ

    IPC分类号： H03H9/17 ,  H01L41/39

    CPC分类号： H01L41/39 ,  H03H3/0076 ,  H03H9/02259 ,  H03H9/2457 ,  H03H2009/02291 ,  H03H2009/02322 ,  H03H2009/02496

    摘要： A method for manufacturing microelectromechanical flexural resonators with a deforming element that has an elongate body extending along a spring axis. A deforming element is positioned on the semiconductor wafer with a defined nominal n-type doping concentration such that a crystal orientation angle is formed between the spring axis of the deforming element and a crystal axis of the silicon semiconductor wafer. The combination of the crystal orientation angle and the nominal n-type doping concentration is adjusted to a specific range, based on total frequency error of the deforming element in a broad temperature range. The combination is optimized to a range where also sensitivity to variations in the material properties is minimized.

    摘要翻译： 一种用于制造具有沿弹簧轴延伸的细长主体的变形元件的微机电弯曲谐振器的方法。 变形元件以规定的标称n型掺杂浓度定位在半导体晶片上，使得在变形元件的弹簧轴线和硅半导体晶片的晶轴之间形成晶体取向角。 基于变形元件在宽温度范围内的总频率误差，将晶体取向角和标称n型掺杂浓度的组合调整到特定范围。 该组合被优化到对材料性质的变化的敏感性最小化的范围。