公开(公告)号：US07799700B2

公开(公告)日：2010-09-21

申请号：US11514901

申请日：2006-09-05

申请人： Kentaro Iizuka ,  Takashi Sampei ,  Nobuyasu Kitahara ,  Yohei Yamashita

发明人： Kentaro Iizuka ,  Takashi Sampei ,  Nobuyasu Kitahara ,  Yohei Yamashita

IPC分类号： H01L21/31 ,  H01L21/00

CPC分类号： H01L21/6715 ,  Y10S438/906

摘要： A method for applying a resin film to the face of a semiconductor wafer, comprising: an assembly holding step of holding an assembly on the surface of chuck means, with the back of the assembly being opposed to the surface of the chuck means, the assembly including a frame having a mounting opening formed in a central portion of the frame, and a semiconductor wafer mounted in the mounting opening of the frame by sticking a mounting tape to the back of the frame and the back of the semiconductor wafer; a liquid droplet supply step of supplying liquid droplets of a solution having a resin dissolved therein onto the face of the semiconductor wafer in the assembly after the assembly holding step; and a spreading step of rotating the chuck means subsequently to the liquid droplet supply step, thereby spreading the liquid droplets throughout the face of the semiconductor wafer. The method further comprises a cleaning step of rotating the chuck means and also supplying a cleaning fluid to the surface of the frame after the spreading step, thereby cleaning the solution which has adhered to the surface of the frame.

摘要翻译： 一种将树脂膜施加到半导体晶片的表面的方法，包括：组件保持步骤，其将组件保持在卡盘装置的表面上，其中组件的背面与卡盘装置的表面相对，组件 包括具有形成在框架的中心部分中的安装开口的框架，以及通过将安装带粘贴到框架的后部和半导体晶片的背面而安装在框架的安装开口中的半导体晶片; 液滴供给步骤，在组装保持步骤之后，在组件中将溶解有树脂的溶液的液滴供给到半导体晶片的表面上; 以及随后在液滴供给步骤旋转卡盘装置的扩散步骤，从而使液滴在半导体晶片的整个表面上扩展。 该方法还包括一个清洁步骤，用于旋转卡盘装置，并且在扩展步骤之后还将清洁流体提供给框架的表面，从而清洁粘附到框架表面的溶液。

公开(公告)号：US07790477B2

公开(公告)日：2010-09-07

申请号：US12366660

申请日：2009-02-06

申请人： David Tee Liang ,  Tuti Mariana Lim ,  Sau Ngen Chen

发明人： David Tee Liang ,  Tuti Mariana Lim ,  Sau Ngen Chen

IPC分类号： H01L21/00 ,  A61L2/00

CPC分类号： H01L21/02046 ,  B08B7/0071 ,  C03B29/025 ,  C03C23/0075 ,  H01L21/02054 ,  H01L21/67028 ,  Y10S438/906

摘要： Contaminants from surfaces of temperature sensitive substrates, such as glass substrates are removed by exposing the surfaces to a hydrogen Surface-mixed diffusion flame for a predetermined duration of time. The predetermined duration of time being insufficient to heat up the surfaces substantially thereby causing damage to the temperature sensitive substrates.

摘要翻译： 通过将表面暴露于氢表面混合扩散火焰预定的持续时间来除去来自诸如玻璃基板的温度敏感性基材表面的污染物。 预定的持续时间不足以加热表面，从而基本上导致对感温基板的损坏。

公开(公告)号：US20100167524A1

公开(公告)日：2010-07-01

申请号：US12638129

申请日：2009-12-15

申请人： Chung-Kyung Jung

发明人： Chung-Kyung Jung

IPC分类号： H01L21/768 ,  C23F1/08

CPC分类号： H01L21/76816 ,  H01L21/02063 ,  H01L21/76807 ,  H01L2221/1063 ,  Y10S438/906

摘要： In a method for fabricating a metal interconnection of a semiconductor device, a lower interconnection and a lower insulation layer are formed over a semiconductor substrate. An etch stop layer is formed over the lower insulation layer. An upper insulation layer is formed over the etch stop layer. A first via hole is formed to expose the etch stop layer corresponding to the lower interconnection. A second via hole exposing the lower interconnection is formed by a primary etching process that selectively removes the etch stop layer exposed by the first via hole. A chemical cleaning process is performed on the second via hole, wherein polymer is formed over the surface of the lower interconnection during the chemical cleaning process. The polymer is removed from the second via hole by a secondary etching process using vaporized gas.

摘要翻译： 在制造半导体器件的金属互连的方法中，在半导体衬底上形成下互连和下绝缘层。 在下绝缘层上形成蚀刻停止层。 在绝缘层上方形成上绝缘层。 形成第一通孔以暴露与下部互连相对应的蚀刻停止层。 暴露下部互连的第二通孔通过主要蚀刻工艺形成，该主蚀刻工艺选择性地去除由第一通孔暴露的蚀刻停止层。 在第二通孔上进行化学清洗处理，其中在化学清洁过程中聚合物形成在下互连的表面上。 通过使用汽化气体的二次蚀刻工艺从第二通孔中除去聚合物。

公开(公告)号：US20100154821A1

公开(公告)日：2010-06-24

申请号：US12639586

申请日：2009-12-16

申请人： TSUYOSHI MORIYA ,  AKITAKA SHIMIZU

发明人： TSUYOSHI MORIYA ,  AKITAKA SHIMIZU

IPC分类号： B08B6/00

CPC分类号： H01L21/02057 ,  H01J37/32862 ,  Y10S438/905 ,  Y10S438/906

摘要： A method for cleaning a component in a substrate processing apparatus including a processing chamber, foreign materials being attached to the component, at least a part of the component being exposed inside the processing chamber, and the substrate processing apparatus being adapted to load and unload a foreign material adsorbing member into and from the processing chamber. The method includes loading the foreign material adsorbing member into the processing chamber; generating a plasma nearer the component than the foreign material adsorbing member; extinguishing the plasma; and unloading the foreign material adsorbing member from the processing chamber, wherein the generation and the extinguishment of the plasma are repeated alternately and the foreign material adsorbing member has a positive potential at least during the extinguishment of the plasma.

摘要翻译： 一种清洗基板处理装置中的部件的方法，所述基板处理装置包括处理室，异物附着在所述部件上，所述部件的至少一部分暴露在所述处理室内部，所述基板处理装置适于加载和卸载 异物吸附构件进出处理室。 该方法包括将异物吸附构件装载到处理室中; 产生比异物吸附部件更靠近部件的等离子体; 熄灭等离子体; 并且从所述处理室卸载所述异物吸附构件，其中所述等离子体的产生和熄灭交替地重复，并且所述异物吸附构件至少在所述等离子体熄灭期间具有正电位。

公开(公告)号：US07674695B1

公开(公告)日：2010-03-09

申请号：US10972717

申请日：2004-10-25

申请人： Ted A. Loxley

发明人： Ted A. Loxley

IPC分类号： H01L21/04

CPC分类号： H01L21/67057 ,  H01L21/02057 ,  H01L21/67303 ,  Y10S438/906

摘要： An electromegasonic wafer cleaning system is disclosed that is extremely important, if not essential, in the fabrication of advanced microelectronic devices having a line width or feature size of from 0.05 to 0.10 micron. A unique synergistic combination is provided wherein piezoelectric transducer means are operated at a tolerable power level, such as from 1 to 2 watts per square centimeter, to minimize the risk of harm to the extremely delicate microcircuits and wherein the face of each wafer is negatively charged to a temperate voltage, such as from 5 to 20 volts, sufficient to cause effective removal of colloidal or sub 0.4-micron contaminant particles.This unique wafer cleaning system supersedes and replaces the standard megasonic-assisted RCA-type wet wafer cleaning systems which have never been able to eliminate or provide efficient purging of harmful sub 0.1-micron particles.

摘要翻译： 公开了一种电沉积晶片清洁系统，其在制造具有0.05至0.10微米的线宽或特征尺寸的先进微电子器件中非常重要，如果不是必需的话。 提供了独特的协同组合，其中压电传感器装置以可承受的功率水平操作，例如从1至2瓦/平方厘米，以最小化对极微弱微电路的危害的风险，并且其中每个晶片的面被带负电 达到5至20伏特的温和电压，足以引起有效去除胶体或次要的0.4微米污染颗粒。 这种独特的晶片清洁系统取代并替代了从未能够消除或提供高效清洗有害的亚微米级0.1微米颗粒的标准兆赫兹辅助RCA型湿式晶圆清洗系统。

公开(公告)号：US07645344B2

公开(公告)日：2010-01-12

申请号：US10681481

申请日：2003-10-08

申请人： Paul A. Farrar

发明人： Paul A. Farrar

IPC分类号： B08B7/00

CPC分类号： B08B7/0021 ,  H01L21/02063 ,  H01L21/67046 ,  H01L27/1087 ,  H01L29/66181 ,  Y10S438/906

摘要： Devices and methods of cleaning are described. The methods, and devices formed by the methods have a number of advantages. Embodiments are shown that include cleaning using a supercritical fluid. Advantages include a combination of both chemical and mechanical removal abilities from the supercritical fluid. Mechanical energy for cleaning is transmitted in a homogenous manner throughout a carrier fluid. The mechanical energy provided in methods shown also can also be used with delicate surface features.

公开(公告)号：US07635016B2

公开(公告)日：2009-12-22

申请号：US10265381

申请日：2002-10-07

申请人： Naoki Suzuki ,  Youichi Nakamura ,  Kazuyuki Tomita

发明人： Naoki Suzuki ,  Youichi Nakamura ,  Kazuyuki Tomita

IPC分类号： B29C65/00

CPC分类号： H05K3/26 ,  B08B7/0035 ,  H05K2203/095 ,  Y10S438/906 ,  Y10T156/14 ,  Y10T156/17

摘要： In a board cleaning method for dry cleaning of connection sites on resin-based boards, one or more gases selected from a group consisting of gas that contains a hydrogen element and gas that contains a fluorine element are supplied at least to the connection sites, plasma is generated from the supplied gas, and the boards are cleaned by radicals and ions that are produced by the generated plasma.

摘要翻译： 在树脂基板上的连接部位的干式清洗用电路板清洗方法中，至少选择从包含氢元素的气体和含有氟元素的气体中选择的一种或多种气体到等离子体 由所供应的气体产生，并且通过由所产生的等离子体产生的自由基和离子来清洁板。

公开(公告)号：US20090305510A1

公开(公告)日：2009-12-10

申请号：US12134600

申请日：2008-06-06

申请人： Maria Heidenblut ,  Raimund Foerg ,  Walter Preis

发明人： Maria Heidenblut ,  Raimund Foerg ,  Walter Preis

IPC分类号： H01L21/3065

CPC分类号： H01L21/0337 ,  H01L21/02071 ,  H01L21/32138 ,  Y10S438/906

摘要： Disclosed is a method of structuring a material surface by dry etching, so that a passivation layer soluble in a solvent forms by the dry etching on parts of the structured material surface, sealing the passivation layer with a substance soluble in the solvent, and removing the sealed passivation layer and the substance by means of the solvent.

摘要翻译： 公开了通过干法蚀刻来构造材料表面的方法，从而通过在结构化材料表面的部分上的干蚀刻形成可溶于溶剂的钝化层，用可溶于溶剂的物质密封钝化层， 通过溶剂密封钝化层和物质。

公开(公告)号：US20090305500A1

公开(公告)日：2009-12-10

申请号：US12490133

申请日：2009-06-23

申请人： Xinliang Lu ,  Chien-Teh Kao ,  Chiukin Steve Lai ,  Mei Chang

发明人： Xinliang Lu ,  Chien-Teh Kao ,  Chiukin Steve Lai ,  Mei Chang

IPC分类号： H01L21/3205

CPC分类号： H01L21/28518 ,  H01L21/0206 ,  H01L21/02063 ,  H01L21/02068 ,  H01L21/28061 ,  H01L21/321 ,  H01L29/665 ,  H01L29/6659 ,  Y10S438/906

摘要： Method for recovering treated metal silicide surfaces or layers are provided. In at least one embodiment, a substrate having an at least partially oxidized metal silicide surface disposed thereon is cleaned to remove the oxidized regions to provide an altered metal silicide surface. The altered metal silicide surface is then exposed to one or more silicon-containing compounds at conditions sufficient to recover the metal silicide surface.

摘要翻译： 提供了处理金属硅化物表面或层的回收方法。 在至少一个实施例中，清洁具有设置在其上的至少部分氧化的金属硅化物表面的衬底以除去氧化区域以提供改变的金属硅化物表面。 然后在足以回收金属硅化物表面的条件下将改变的金属硅化物表面暴露于一种或多种含硅化合物。

公开(公告)号：US07605093B2

公开(公告)日：2009-10-20

申请号：US11675533

申请日：2007-02-15

申请人： Thomas H. Baum ,  Chongying Xu

发明人： Thomas H. Baum ,  Chongying Xu

IPC分类号： H01L21/31

CPC分类号： H01L28/65 ,  C07F15/004 ,  C23C16/18 ,  C23C16/40 ,  C23F1/30 ,  C30B25/02 ,  C30B29/02 ,  C30B29/16 ,  H01L21/02071 ,  H01L21/32136 ,  H01L28/55 ,  Y10S438/906

摘要： A method of forming an iridium-containing film on a substrate, from an iridium-containing precursor thereof which is decomposable to deposit iridium on the substrate, by decomposing the precursor and depositing iridium on the substrate in an oxidizing ambient environment which may for example contain an oxidizing gas such as oxygen, ozone, air, and nitrogen oxide. Useful precursors include Lewis base stabilized Ir(I) β-diketonates and Lewis base stabilized Ir(I) β-ketoiminates. The iridium deposited on the substrate may then be etched for patterning an electrode, followed by depositing on the electrode a dielectric or ferroelectric material, for fabrication of thin film capacitor semiconductor devices such as DRAMs, FRAMs, hybrid systems, smart cards and communication systems.