Methods and apparatus for operating high energy accelerator in low energy mode
    11.
    发明申请
    Methods and apparatus for operating high energy accelerator in low energy mode 有权
    在低能量模式下运行高能量加速器的方法和装置

    公开(公告)号:US20010040220A1

    公开(公告)日:2001-11-15

    申请号:US09779243

    申请日:2001-02-08

    CPC classification number: H01J37/3171 H01J2237/04735 H05H5/06

    Abstract: Methods and apparatus are provided for efficiently operating an ion implanter which includes a charged particle accelerator in a high energy mode and in a low energy mode. The charged particle accelerator includes a high voltage power supply, an accelerator column coupled to the high voltage power supply and a switching assembly. The accelerator column includes a plurality of accelerator electrodes. The high voltage power supply is disabled from energizing the accelerator column in the low energy mode. The switching assembly includes switching elements for electrically connecting the accelerator electrodes to a reference potential in the low energy mode and for electrically isolating the accelerator electrodes from the reference potential in the high energy mode. The switching assembly prevents positive potentials on the accelerator electrodes and thus minimizes space charge expansion of the beam when transporting positive ion beams in the low energy mode.

    Abstract translation: 提供了用于有效地操作离子注入机的方法和装置,其包括高能量模式和低能量模式的带电粒子加速器。 带电粒子加速器包括高压电源,耦合到高压电源的加速器柱和开关组件。 加速器柱包括多个加速器电极。 在低能量模式下,高压电源禁止加速器柱通电。 开关组件包括用于将加速器电极电连接到低能量模式中的参考电位并且用于将加速器电极与高​​能量模式中的参考电位电隔离的开关元件。 开关组件防止加速器电极上的正电位,从而当以低能量模式传输正离子束时,使光束的空间电荷膨胀最小化。

    Methods, based on a genetic algorithm, for configuring parameters of an array of multiple components for cooperative operation to achieve a desired performance result
    12.
    发明申请
    Methods, based on a genetic algorithm, for configuring parameters of an array of multiple components for cooperative operation to achieve a desired performance result 失效
    基于遗传算法的方法,用于配置用于协作操作的多个组件的阵列的参数以实现期望的性能结果

    公开(公告)号:US20010030289A1

    公开(公告)日:2001-10-18

    申请号:US09785943

    申请日:2001-02-16

    Inventor: Saori Fukui

    CPC classification number: G06N3/126 H01J37/3023

    Abstract: Methods are disclosed for determining respective values of configurational and/or operational parameters of a system, such as a charged-particle-beam (CPB) optical system as used, e.g., in a CPB microlithography apparatus. Executing the methods provides an optimal combination of the parametric values for the system while preventing convergence to a local solution rather than an optimal solution. The methods are based on a genetic algorithm. For example, consider a subject system including six deflectors, each of which being energized with a respective current ratio and each of which producing a respective magnetic-field orientation. For each deflector, the respective values of each of these two parameters is regarded as a separate gene, yielding a total of 12 genes. Each different combination of the parameters is regarded as a species having a respective chromosome containing the 12 respective genes. A specified number of species is selected with random genes as initial values. From this initial group, a specified number of species having high evaluation values are selected. Species possessing new chromosomes in which the genes are recombined are produced by crossing selected individuals in the manner of parents. A specified number of child species having higher evaluation values are carried forward for further matings. By repeating the matings and weighting the offspring, an individual having an optimal evaluation value ultimately is produced.

    Abstract translation: 公开了用于确定诸如在CPB微光刻设备中使用的带电粒子束(CPB)光学系统的系统的配置和/或操作参数的相应值的方法。 执行这些方法提供了系统的参数值的最佳组合,同时防止收敛到本地解决方案而不是最优解。 该方法基于遗传算法。 例如,考虑包括六个偏转器的被摄体系统,每个偏转器各自以相应的电流比激励,并且每个偏转器产生相应的磁场取向。 对于每个偏转器,将这两个参数中的每一个的相应值视为单独的基因,产生总共12个基因。 参数的每个不同组合被认为是具有含有12个各自基因的各染色体的物种。 以随机基因作为初始值选择指定数量的物种。 从该初始组中,选择具有高评估值的指定数量的物种。 具有新染色体的物种,其中基因重组是通过以父母的方式穿过选定的个体而产生的。 特定数量的具有较高评估价值的儿童物种被进一步交配。 通过重复交配并加权后代,最终产生具有最佳评估值的个体。

    Deflector of a micro-column electron beam apparatus and method for fabricating the same
    13.
    发明申请
    Deflector of a micro-column electron beam apparatus and method for fabricating the same 失效
    微柱电子束装置的偏转器及其制造方法

    公开(公告)号:US20040099811A1

    公开(公告)日:2004-05-27

    申请号:US10617703

    申请日:2003-07-14

    Abstract: The present invention relates to a deflector of a micro-column electron beam apparatus and method for fabricating the same, which forms a seed metal layer and a mask layer on both sides of a substrate, and exposes some of the seed metal layer on which deflecting plates, wirings and pads are to be formed by lithography process using a predetermined mask. The wirings and pads are formed by plating metal on the exposed portion, and some of the metal layer is also exposed on which the deflecting plates are to be formed using a predetermined mask, and then the metal is plated with desired thickness, thereby the deflecting plates are completed. Therefore, by forming plurality of deflecting plates on both sides of the substrate at the same time through plating process, alignment between the deflecting plates formed on both sides of the substrate can be exactly made, and by fabricating a deflector integrated with the substrate and deflecting plates in a batch process, productivity and reproducibility is improved. In addition, since the deflecting plates, wirings and pads are directly formed on the substrate, structural safety is improved and thereby durability is also improved.

    Abstract translation: 微柱电子束装置的偏转器及其制造方法技术领域本发明涉及一种微柱电子束装置的偏转器及其制造方法,其在基板的两面形成种子金属层和掩模层,并使一些种子金属层露出偏转 板,布线和焊盘将通过使用预定掩模的光刻工艺形成。 布线和焊盘通过在暴露部分上电镀金属而形成,并且一些金属层也暴露在其上将使用预定掩模在其上形成偏转板,然后以期望的厚度镀覆金属,由此偏转 板块完成。 因此,通过电镀处理同时在基板的两面形成多个偏转板,可以精确地形成形成在基板两侧的偏转板之间的对准,并且通过制造与基板一体化的偏转板和偏转 分批处理板,提高了生产率和再现性。 此外,由于偏转板,布线和焊盘直接形成在基板上,所以结构安全性得到改善,从而也提高了耐久性。

    Image capture system and method
    15.
    发明申请
    Image capture system and method 审中-公开
    图像捕获系统和方法

    公开(公告)号:US20040089814A1

    公开(公告)日:2004-05-13

    申请号:US10697874

    申请日:2003-10-31

    CPC classification number: H04N7/18 H04N5/23203

    Abstract: Motion signals from head and body motion detectors are combined to measure motion of a user's head with respect to his body. A field of view of an image capture device is moved based on the measured motion of the user's head with respect to his body.

    Abstract translation: 来自头部和身体运动检测器的运动信号被组合以测量使用者头部相对于他的身体的运动。 基于用户头部相对于他的身体的测量的运动,移动图像捕获设备的视场。

    Charged particle beam lithography system, lithography method using charged particle beam, method of controlling charged particle beam, and method of manufacturing semiconductor device

    公开(公告)号:US20040029046A1

    公开(公告)日:2004-02-12

    申请号:US10394208

    申请日:2003-03-24

    CPC classification number: B82Y10/00 B82Y40/00 H01J37/3174

    Abstract: A charged particle beam lithography system includes a charged particle beam emitter which generates a charged particle beam and which emits the charged particle beam to a wafer, the charged particle beam emitter emitting the charged particle beam at an acceleration voltage lower than a voltage causing a proximity effect that back scattered electrons generated from the wafer by irradiation of the charged particle beam influence an exposure amount of a pattern to be written close to an irradiation position of the charged particle beam; an illumination optical system which adjusts a beam radius of the charged particle beam; a cell aperture having a cell pattern of a shape corresponding to a desired pattern to be written; a first deflector which deflects the charged particle beam with a first electric field so as to enter a desired cell pattern of the cell aperture, and which deflects the charged particle beam which passes through the cell pattern back to an optical axis thereof; a demagnification projection optical system which demagnifies the charged particle beam from the cell aperture with a second electric field so as to form an image on the wafer; and a second deflector which deflects the charged particle beam from the cell aperture with a third electric field to adjust an irradiation position of the charged particle beam on the wafer, wherein the charged particle beam emitter emits the charged particle beam at an acceleration voltage lower than a voltage causing a proximity effect that back scattered electrons generated from the wafer by irradiation of the charged particle beam influence an exposure amount of a pattern to be written close to an irradiation position of the charged particle beam, and the demagnification projection optical system includes N-fold (N: a natural number of 2 or larger) of M-pole lenses (M: an even number of 4 or larger) and an aberration corrector which corrects at least one of spherical aberration and chromatic aberration in nullM/2null directions each orthogonal to the optical axis independently of each other, the aberration occurring when the beam radius is increased by the irradiation optical system in order to reduce a blur caused by a space-charge effect in a position where the charged particle beam forms an image on the wafer.

    Multiple target, multiple energy radioisotope production

    公开(公告)号:US20030015666A1

    公开(公告)日:2003-01-23

    申请号:US10191380

    申请日:2002-07-08

    CPC classification number: G21G1/10 H05H7/10

    Abstract: A multiple target array for receiving particles from a particle beam generator includes a particle beam transport path having a transport inlet and a transport outlet, the inlet receiving a particle beam from the particle beam generator. A kicker magnet is positioned along the particle beam transport path. The kicker magnet has an ON state and an OFF state and a kicker magnet inlet and a kicker magnet outlet. The array further includes a plurality of target paths, each of said target paths having a target inlet and terminating in a target. One of the target inlets is connected to the transport path adjacent to the kicker magnet outlet, and the particle beam in the transport path entering the kicker magnet inlet passes along the transport path through the kicker magnet outlet when the kicker magnet is in the OFF state, and the beam is directed to the target inlet when the kicker magnet is in the ON state.

    Multiple pass write method and reticle

    公开(公告)号:US20020071998A1

    公开(公告)日:2002-06-13

    申请号:US09968955

    申请日:2001-10-03

    Abstract: A multiple pass write method and a reticle made from the method are described. A reticle preform is provided including a transparent substrate, a metal layer, and a layer of a photoresist material. In a first write pass, a first portion of the photoresist material is exposed by an electron beam device. Then, in a second write pass, a second portion of the photoresist material is exposed. The first exposed portion is smaller or has finer dimensions than the second exposed portion. The exposed portions of photoresist material are removed, and the unexposed portions of photoresist serve as a mask. The uncovered portions of the conductive layer are etched. Further, the unexposed portions of the photoresist material are removed, creating a reticle through a multiple write pass strategy.

    Secondary electron filtering method, defect detection method and device manufacturing method using the same method
    20.
    发明申请
    Secondary electron filtering method, defect detection method and device manufacturing method using the same method 审中-公开
    二次电子滤波方法,缺陷检测方法和使用相同方法的器件制造方法

    公开(公告)号:US20010025929A1

    公开(公告)日:2001-10-04

    申请号:US09818226

    申请日:2001-03-28

    Inventor: Mamoru Nakasuji

    CPC classification number: H01J37/28 H01J37/244 H01J2237/057

    Abstract: If a conventional mesh filter is used for a voltage contrast measurement on a specimen surface, aberrations that is difficult to correct in a primary electron (PE) beam are generated and then it is difficult to obtain a fine focused beam. An axially symmetric electrode is placed between the secondary electron (SE) detector and the specimen. Through an adjustment for an applied voltage in the electrode, a potential on the optical axis above the specimen is adjusted so that a passage or non-passage of the SEs can be controlled.

    Abstract translation: 如果将传统的网状滤光片用于样品表面上的电压对比度测量,则产生在一次电子(PE)光束中难以校正的像差,因此难以获得精细的聚焦光束。 轴向对称电极放置在二次电子(SE)检测器和样品之间。 通过调整电极中施加的电压,调整样品上方的光轴上的电位,以便可以控制SE的通过或不通过。

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