Abstract:
Methods and apparatus are provided for efficiently operating an ion implanter which includes a charged particle accelerator in a high energy mode and in a low energy mode. The charged particle accelerator includes a high voltage power supply, an accelerator column coupled to the high voltage power supply and a switching assembly. The accelerator column includes a plurality of accelerator electrodes. The high voltage power supply is disabled from energizing the accelerator column in the low energy mode. The switching assembly includes switching elements for electrically connecting the accelerator electrodes to a reference potential in the low energy mode and for electrically isolating the accelerator electrodes from the reference potential in the high energy mode. The switching assembly prevents positive potentials on the accelerator electrodes and thus minimizes space charge expansion of the beam when transporting positive ion beams in the low energy mode.
Abstract:
Methods are disclosed for determining respective values of configurational and/or operational parameters of a system, such as a charged-particle-beam (CPB) optical system as used, e.g., in a CPB microlithography apparatus. Executing the methods provides an optimal combination of the parametric values for the system while preventing convergence to a local solution rather than an optimal solution. The methods are based on a genetic algorithm. For example, consider a subject system including six deflectors, each of which being energized with a respective current ratio and each of which producing a respective magnetic-field orientation. For each deflector, the respective values of each of these two parameters is regarded as a separate gene, yielding a total of 12 genes. Each different combination of the parameters is regarded as a species having a respective chromosome containing the 12 respective genes. A specified number of species is selected with random genes as initial values. From this initial group, a specified number of species having high evaluation values are selected. Species possessing new chromosomes in which the genes are recombined are produced by crossing selected individuals in the manner of parents. A specified number of child species having higher evaluation values are carried forward for further matings. By repeating the matings and weighting the offspring, an individual having an optimal evaluation value ultimately is produced.
Abstract:
The present invention relates to a deflector of a micro-column electron beam apparatus and method for fabricating the same, which forms a seed metal layer and a mask layer on both sides of a substrate, and exposes some of the seed metal layer on which deflecting plates, wirings and pads are to be formed by lithography process using a predetermined mask. The wirings and pads are formed by plating metal on the exposed portion, and some of the metal layer is also exposed on which the deflecting plates are to be formed using a predetermined mask, and then the metal is plated with desired thickness, thereby the deflecting plates are completed. Therefore, by forming plurality of deflecting plates on both sides of the substrate at the same time through plating process, alignment between the deflecting plates formed on both sides of the substrate can be exactly made, and by fabricating a deflector integrated with the substrate and deflecting plates in a batch process, productivity and reproducibility is improved. In addition, since the deflecting plates, wirings and pads are directly formed on the substrate, structural safety is improved and thereby durability is also improved.
Abstract:
A bearing for use in a vacuum chamber comprises a gas bearing discharging pressurised gas into a gap between two members to maintain a predetermined separation between those members. To avoid the gas forming the gas bearing being an unacceptable leak into the vacuum chamber, a vacuum pump is provided between the vacuum chamber and the gas bearing
Abstract:
Motion signals from head and body motion detectors are combined to measure motion of a user's head with respect to his body. A field of view of an image capture device is moved based on the measured motion of the user's head with respect to his body.
Abstract:
A processing method for selectively reducing or removing the region to be exposed with energy ray in a film formed on a substrate, comprising relatively scanning a first exposure light whose shape on the substrate is smaller than the whole first region to be exposed against the whole first region to be exposed to selectively remove or reduce the first region to be exposed, and exposing a whole second region to be exposed inside the whole first region to be exposed with a second exposure light to selectively expose the whole second region to be exposed.
Abstract:
A charged particle beam lithography system includes a charged particle beam emitter which generates a charged particle beam and which emits the charged particle beam to a wafer, the charged particle beam emitter emitting the charged particle beam at an acceleration voltage lower than a voltage causing a proximity effect that back scattered electrons generated from the wafer by irradiation of the charged particle beam influence an exposure amount of a pattern to be written close to an irradiation position of the charged particle beam; an illumination optical system which adjusts a beam radius of the charged particle beam; a cell aperture having a cell pattern of a shape corresponding to a desired pattern to be written; a first deflector which deflects the charged particle beam with a first electric field so as to enter a desired cell pattern of the cell aperture, and which deflects the charged particle beam which passes through the cell pattern back to an optical axis thereof; a demagnification projection optical system which demagnifies the charged particle beam from the cell aperture with a second electric field so as to form an image on the wafer; and a second deflector which deflects the charged particle beam from the cell aperture with a third electric field to adjust an irradiation position of the charged particle beam on the wafer, wherein the charged particle beam emitter emits the charged particle beam at an acceleration voltage lower than a voltage causing a proximity effect that back scattered electrons generated from the wafer by irradiation of the charged particle beam influence an exposure amount of a pattern to be written close to an irradiation position of the charged particle beam, and the demagnification projection optical system includes N-fold (N: a natural number of 2 or larger) of M-pole lenses (M: an even number of 4 or larger) and an aberration corrector which corrects at least one of spherical aberration and chromatic aberration in nullM/2null directions each orthogonal to the optical axis independently of each other, the aberration occurring when the beam radius is increased by the irradiation optical system in order to reduce a blur caused by a space-charge effect in a position where the charged particle beam forms an image on the wafer.
Abstract:
A multiple target array for receiving particles from a particle beam generator includes a particle beam transport path having a transport inlet and a transport outlet, the inlet receiving a particle beam from the particle beam generator. A kicker magnet is positioned along the particle beam transport path. The kicker magnet has an ON state and an OFF state and a kicker magnet inlet and a kicker magnet outlet. The array further includes a plurality of target paths, each of said target paths having a target inlet and terminating in a target. One of the target inlets is connected to the transport path adjacent to the kicker magnet outlet, and the particle beam in the transport path entering the kicker magnet inlet passes along the transport path through the kicker magnet outlet when the kicker magnet is in the OFF state, and the beam is directed to the target inlet when the kicker magnet is in the ON state.
Abstract:
A multiple pass write method and a reticle made from the method are described. A reticle preform is provided including a transparent substrate, a metal layer, and a layer of a photoresist material. In a first write pass, a first portion of the photoresist material is exposed by an electron beam device. Then, in a second write pass, a second portion of the photoresist material is exposed. The first exposed portion is smaller or has finer dimensions than the second exposed portion. The exposed portions of photoresist material are removed, and the unexposed portions of photoresist serve as a mask. The uncovered portions of the conductive layer are etched. Further, the unexposed portions of the photoresist material are removed, creating a reticle through a multiple write pass strategy.
Abstract:
If a conventional mesh filter is used for a voltage contrast measurement on a specimen surface, aberrations that is difficult to correct in a primary electron (PE) beam are generated and then it is difficult to obtain a fine focused beam. An axially symmetric electrode is placed between the secondary electron (SE) detector and the specimen. Through an adjustment for an applied voltage in the electrode, a potential on the optical axis above the specimen is adjusted so that a passage or non-passage of the SEs can be controlled.