公开(公告)号：US6147449A

公开(公告)日：2000-11-14

申请号：US508906

申请日：1995-07-28

Applicant: Tatsuya Iwasaki ,  Masato Yamanobe ,  Takeo Tsukamoto ,  Keisuke Yamamoto ,  Yasuhiro Hamamoto

Inventor： Tatsuya Iwasaki ,  Masato Yamanobe ,  Takeo Tsukamoto ,  Keisuke Yamamoto ,  Yasuhiro Hamamoto

IPC: H01J9/02 ,  H01J1/316 ,  H01J29/04 ,  H01J31/12 ,  H01J1/05

CPC classification number: H01J9/027 ,  H01J1/316 ,  H01J2329/00

Abstract: In an electron-emitting device including, between electrodes, an electroconductive film having an electron emitting region, the electroconductive film has a film formed in the electron emitting region and made primarily of a material having a higher melting point than that of a material of the electroconductive film. Alternatively, the electroconductive film has a film formed in the electron emitting region and made primarily of a material having a higher temperature at which the material develops a vapor pressure of 1.3.times.10.sup.-3 Pa, than that of a material of the electroconductive film. A manufacturing method for an electron-emitting device includes a step of forming a film made primarily of a metal in the electron emitting region of the electroconductive film. The electron-emitting device has stable characteristics and improved efficiency of electron emission. An image-forming apparatus comprising the electron-emitting devices has high luminance and excellent stability in operation.

Abstract translation: 在包括电极之间的电子发射器件中，具有电子发射区域的导电膜，导电膜具有形成在电子发射区域中的膜，主要由熔点比材料的熔点高的材料制成 导电膜。 或者，导电膜具有形成在电子发射区域中的膜，主要由具有较高温度的材料制成，其中该材料的材料产生1.3×10 -3 Pa的蒸汽压力，而不是导电膜的材料。 电子发射器件的制造方法包括在导电膜的电子发射区域中形成主要由金属制成的膜的步骤。 电子发射器件具有稳定的特性和改善的电子发射效率。 包括电子发射器件的图像形成装置具有高亮度和优异的操作稳定性。

公开(公告)号：US6133056A

公开(公告)日：2000-10-17

申请号：US256882

申请日：1999-02-24

Applicant: David A. Cathey, Jr. ,  John K. Lee ,  Tianhong Zhang ,  Behnam Moradi

Inventor： David A. Cathey, Jr. ,  John K. Lee ,  Tianhong Zhang ,  Behnam Moradi

IPC: H01J1/05 ,  H01J9/02 ,  H01L21/00 ,  H01L21/4763 ,  H01L29/06

CPC classification number: H01J3/021 ,  H01J29/467 ,  H01J31/127 ,  H01J9/148 ,  H01J2203/0232 ,  H01J2329/463

Abstract: Semiconductor devices may be made by forming a silicided layer on a silicon material such as that used to form the extractor of a field emission display. The silicided layer may be self-aligned with the emitter of a field emission display. If the silicided layer is treated at a temperature above 1000.degree. C. by exposure to a nitrogen source, the silicide is resistant to subsequent chemical attack such as that involved in a buffered oxide etching process.

Abstract translation: 半导体器件可以通过在诸如用于形成场致发射显示器的提取器的硅材料上形成硅化物层而制成。 硅化物层可以与场发射显示器的发射极自对准。 如果通过暴露于氮源在高于1000℃的温度下处理硅化物层，则硅化物对随后的化学侵蚀（例如涉及缓冲氧化物蚀刻工艺）是有抗性的。

公开(公告)号：US6097140A

公开(公告)日：2000-08-01

申请号：US29314

申请日：1998-02-12

Applicant: Arthur Miller ,  Dennis John Bechis ,  Steven Alan Lipp ,  Jeffrey Paul Johnson ,  Daniel Irwin Amey, Jr.

Inventor： Arthur Miller ,  Dennis John Bechis ,  Steven Alan Lipp ,  Jeffrey Paul Johnson ,  Daniel Irwin Amey, Jr.

IPC: H01J1/304 ,  H01J29/04 ,  H01J31/12 ,  H01J1/05

CPC classification number: B82Y10/00 ,  H01J1/304 ,  H01J29/04 ,  H01J31/126 ,  H01J2201/304 ,  H01J2201/30457 ,  H01J2329/00

Abstract: Display panels having at least one suspended fibrous cathode containing an electron field emitter are disclosed. The fibrous cathode is supported by a substrate (10) containing two sets of parallel rows of crests and valleys. The first set of parallel crests (11) and valleys (12) provide the valleys along which the fibrous cathode is aligned. The second set of parallel crests (13) and valleys (14) is perpendicular to the first set. The valleys (14) provide the means for suspending the fibrous cathode. The display panels can be produced in large sizes while still maintaining high quality and efficiency.

Abstract translation: PCT No.PCT / US96 / 12822 Sec。 371日期1998年2月12日 102（e）日期1998年2月12日PCT 1996年8月6日PCT PCT。 公开号WO97 / 07524 日期1997年2月27日公开了具有至少一个含有电子场发射体的悬浮纤维阴极的显示面板。 纤维阴极由包含两组平行的波峰和谷的衬底（10）支撑。 第一组平行波峰（11）和谷（12）提供了纤维阴极对齐的谷。 第二组平行波峰（13）和谷（14）垂直于第一组。 谷（14）提供悬挂纤维状阴极的装置。 显示面板可以大尺寸生产，同时仍然保持高质量和高效率。

公开(公告)号：US6084340A

公开(公告)日：2000-07-04

申请号：US253082

申请日：1999-02-19

Applicant: Peter Bachmann ,  Detlef Wiechert ,  Klaus Rademacher ,  Howard Wilson

Inventor： Peter Bachmann ,  Detlef Wiechert ,  Klaus Rademacher ,  Howard Wilson

IPC: H01J1/30 ,  H01J1/308 ,  H01J1/05 ,  H01J1/02 ,  H01J1/16 ,  H01J63/04

CPC classification number: H01J1/308 ,  H01J2201/30457

Abstract: In an electron-emitting component with a cold cathode comprising a substrate and a cover layer with a diamond-containing material consisting of nano-crystalline diamond having a Raman spectrum with three lines, i.e. at K=1334.+-.4 cm.sup.-1 with a half-width value of 12.+-.6 cm.sup.-1, at K=1140.+-.20 cm.sup.-1 and at K=1470.+-.20 cm.sup.-1, the cold cathode exhibits a low extraction field strength, a stable emission at pressures below 10.sup.-4 mbar, a steep current-voltage characteristic and stable emission currents in excess of 1 microampere/mm.sup.2. The electron emission of the component demonstrates a long-time stability, and a constant intensity of the electron beam across its cross-section.

Abstract translation: 在具有冷阴极的电子发射部件中，包括基底和具有含金刚石材料的覆盖层，所述金刚石材料由具有三条线的拉曼光谱的纳米晶体金刚石组成，即在K = 1334 +/- 4cm -1处， 在K = 1140 +/- 20cm -1处，在K = 1470 +/- 20cm -1处的半值宽度为12 +/- 6cm -1，冷阴极表现出较低的提取场强， 在低于10-4毫巴的压力下稳定发射，电流电压特性曲线陡峭，发射电流稳定在1微安/毫米2以上。 元件的电子发射表现出长时间的稳定性，电子束横截面的恒定强度。

公开(公告)号：US6027670A

公开(公告)日：2000-02-22

申请号：US105204

申请日：1998-06-26

Applicant: Shigeki Otani ,  Ryutaro Soda ,  Yoshio Ishizawa

Inventor： Shigeki Otani ,  Ryutaro Soda ,  Yoshio Ishizawa

IPC: C01B35/04 ,  H01J1/14 ,  H01J1/148 ,  H01J37/06 ,  H01B1/06 ,  H01J1/05

CPC classification number: H01J1/148

Abstract: A rare earth hexaboride electron-emitting material of the formula ReB.sub.6+x, wherein Re is La, Ce or (La+Ce), and 0.05.ltoreq.x.ltoreq.0.20.

Abstract translation: 式ReB6 + x的稀土六硼化物电子发射材料，其中Re为La，Ce或（La + Ce），0.05≤x≤0.20。

公开(公告)号：US5956611A

公开(公告)日：1999-09-21

申请号：US922871

申请日：1997-09-03

Applicant: David A. Cathey, Jr. ,  John K. Lee ,  Tianhong Zhang ,  Behnam Moradi

Inventor： David A. Cathey, Jr. ,  John K. Lee ,  Tianhong Zhang ,  Behnam Moradi

IPC: H01J1/05 ,  H01J9/02 ,  H01L21/00 ,  H01L21/4763 ,  H01L29/06

CPC classification number: H01J3/021 ,  H01J29/467 ,  H01J31/127 ,  H01J9/148 ,  H01J2203/0232 ,  H01J2329/463

Abstract: Semiconductor devices may be made by forming a silicided layer on a silicon material such as that used to form the extractor of a field emission display. The silicided layer may be self-aligned with the emitter of a field emission display. If the silicided layer is treated at a temperature above 1000.degree. C. by exposure to a nitrogen source, the silicide is resistant to subsequent chemical attack such as that involved in a buffered oxide etching process.

公开(公告)号：US4624833A

公开(公告)日：1986-11-25

申请号：US674771

申请日：1984-11-26

Applicant: Kaoru Umemura ,  Tohru Ishitani ,  Toshiyuki Aida ,  Hifumi Tamura

Inventor： Kaoru Umemura ,  Tohru Ishitani ,  Toshiyuki Aida ,  Hifumi Tamura

IPC: C22C19/03 ,  H01J1/02 ,  H01J27/26 ,  H01J37/08 ,  H01J1/05

CPC classification number: H01J37/08 ,  H01J27/26

Abstract: A liquid metal ion source for emitting P ions, wherein a Cu alloy which contains at most 25 at. % of P and if necessary, further contains Ag, C or Si, and/or B is melted and fed to an emitter tip so as to generate an ion beam under a high electric field.

Abstract translation: 一种用于发射P离子的液体金属离子源，其中包含至多25原子的Cu合金。 P的百分数，如果需要，还含有Ag，C或Si，和/或B被熔化并供给到发射极尖端，以便在高电场下产生离子束。

公开(公告)号：US4367429A

公开(公告)日：1983-01-04

申请号：US203294

申请日：1980-11-03

Applicant: Victor Wang ,  Joseph A. Wysocki ,  Gregory L. Tangonan ,  Robert L. Seliger

Inventor： Victor Wang ,  Joseph A. Wysocki ,  Gregory L. Tangonan ,  Robert L. Seliger

IPC: C22F3/00 ,  C22C5/04 ,  C22F3/02 ,  H01J27/26 ,  H01J37/08 ,  H01J37/317 ,  H01J1/05

CPC classification number: H01J27/26 ,  H01J37/08 ,  H01J2237/0805

Abstract: Alloys suitable for use in liquid metal field ionization ion sources are provided. Such sources include an anode electrode for supporting an ion emitter comprising an alloy in the liquid state. The source further comprises means for generating an ionizing electric field and a reservoir for the liquid metal, ions of which are to be emitted by the source.The alloys are selected from the group consisting of (a) metal-metalloid alloys comprising about 10 to 30 atom percent of at least one metalloid element, the balance at least one transition metal element, (b) early transition-late transition alloys comprising about 30 to 85 atom percent of at least one early transition metal, the balance at least one late transition metal, and (c) Group II alloys comprising about 35 to 80 atom percent of at least one Group II element, the balance at least one metal element.Ions generated in liquid metal ion sources form a high brightness ion beam, which permits focusing a beam of emitted ions to a submicrometer spot. The ions may be used to alter material properties by ion implantation such as to dope semiconductors, to form ohmic contacts, to improve wear and corrosion resistance in metal surfaces and by sputter etching thin films such as metals, dielectrics and semiconductors.

Abstract translation: 提供了适用于液态金属场离子源的合金。 这种源包括用于支撑包含处于液态的合金的离子发射体的阳极。 该源还包括用于产生电离电场的装置和用于液体金属的储存器，其离子将由源发射。 合金选自（a）包含约10至30原子％的至少一种准金属元素的金属 - 类金属合金，余量至少一种过渡金属元素，（b）早期过渡 - 后转变合金，其包含约 30至85原子％的至少一种早期过渡金属，余量至少一种后过渡金属，和（c）包含约35至80原子％的至少一种II族元素的II族合金，余量至少一种金属 元件。 在液态金属离子源中产生的离子形成高亮度离子束，其允许将发射的离子束聚焦到亚微米点。 离子可用于通过离子注入来改变材料性质，例如掺杂半导体，以形成欧姆接触，以改善金属表面的耐磨性和耐腐蚀性，并通过溅射蚀刻诸如金属，电介质和半导体的薄膜。

公开(公告)号：US3464207A

公开(公告)日：1969-09-02

申请号：US3464207D

申请日：1966-10-10

Applicant: AMERICAN STANDARD INC

Inventor： OKRESS ERNEST C

IPC: F03H1/00 ,  H05H1/18 ,  H01J1/05

CPC classification number: F03H1/0087

公开(公告)号：US10125052B2

公开(公告)日：2018-11-13

申请号：US14661855

申请日：2015-03-18

Applicant: Massachusetts Institute of Technology

Inventor： Paulo C. Lozano ,  Steven Mark Arestie

IPC: C04B35/528 ,  B29C39/02 ,  B29C71/02 ,  C04B35/64 ,  C01B32/05 ,  F03H1/00 ,  H01J37/08 ,  H01J1/05 ,  H01J9/02

Abstract: Electrically conductive aerogel and methods of making the same are disclosed. A solution is provided. The solution is cured to form a polymer. The polymer is carbonized to form the conductive aerogel.