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    Electron emitting element and method for producing the same
    16.
    发明授权
    Electron emitting element and method for producing the same 有权
    电子发射元件及其制造方法

    公开(公告)号：US08860293B2

    公开(公告)日：2014-10-14

    申请号：US13086597

    申请日：2011-04-14

    Applicant: Hiroyuki Hirakawa

    Inventor： Hiroyuki Hirakawa

    IPC: H01J1/02 ,  H01J1/312 ,  H01J9/02 ,  B82Y10/00

    CPC classification number: H01J1/312 ,  B82Y10/00 ,  H01J9/022 ,  H01J2201/3125

    Abstract: The present invention provides an electron emitting element, comprising: a first electrode; an insulating layer formed on the first electrode and having an opening of through hole; a second electrode formed on the insulating layer, the second electrode being disposed so as to cover at least the opening and face the first electrode via the opening; and a fine particle layer disposed between the first electrode and the second electrode, the fine particle layer being composed of insulating fine particles and conductive fine particles, wherein the insulating layer is disposed between the first electrode and the fine particle layer, or between the second electrode and the fine particle layer, when a voltage is applied between the first electrode and the second electrode, electrons are emitted from the first electrode and accelerated in the fine particle layer to pass through the second electrode.

    Abstract translation: 本发明提供一种电子发射元件，包括：第一电极; 绝缘层，其形成在所述第一电极上并且具有通孔的开口; 形成在所述绝缘层上的第二电极，所述第二电极被设置成至少覆盖所述开口并经由所述开口面对所述第一电极; 以及设置在所述第一电极和所述第二电极之间的细颗粒层，所述细颗粒层由绝缘细颗粒和导电细颗粒构成，其中所述绝缘层设置在所述第一电极和所述细颗粒层之间，或者所述第二电极 电极和细粒层，当在第一电极和第二电极之间施加电压时，电子从第一电极发射并在微粒层中加速以通过第二电极。

    Ferroelectric electron beam source and method for generating electron beams
    17.
    发明申请
    Ferroelectric electron beam source and method for generating electron beams 审中-公开
    铁电电子束源及其产生电子束的方法

    公开(公告)号：US20050263808A1

    公开(公告)日：2005-12-01

    申请号：US11130528

    申请日：2005-05-16

    Applicant: Shinzo Morita

    Inventor： Shinzo Morita

    IPC: H01J9/02 ,  H01J1/30 ,  H01J1/312 ,  H01L29/76 ,  H01L21/00

    CPC classification number: H01J1/30 ,  H01J2201/306

    Abstract: A comb-shaped electrode is formed on the main surface of a ferroelectric thin film and a planar electrode is formed on the rear surface of a ferroelectric thin film. Then, the property of the main surface of the ferroelectric thin film is converted into semi-conduction. Then, the assembly comprised of the ferroelectric thin film, the comb-shaped electrode and the planar electrode is disposed in a given atmosphere. Under this condition, a negative voltage is applied to the comb-shaped electrode to polarize the ferroelectric thin film, and a negative impulse voltage is applied to the planar electrode, thereby generating electron beams from the main surface of the ferroelectric thin film.

    Abstract translation: 在铁电薄膜的主表面上形成梳状电极，并且在铁电薄膜的后表面上形成平面电极。 然后，将铁电薄膜的主表面的性质转换成半导体。 然后，将铁电薄膜，梳状电极和平面电极组成的组件设置在给定的气氛中。 在这种条件下，向梳状电极施加负电压以极化铁电薄膜，并向平面电极施加负的脉冲电压，从而从铁电薄膜的主表面产生电子束。

    Method of fabricating silicon emitter with a low porosity heavily doped contact layer
    18.
    发明授权
    Method of fabricating silicon emitter with a low porosity heavily doped contact layer 失效
    制造具有低孔隙率重掺杂接触层的硅发射器的方法

    公开(公告)号：US06939728B2

    公开(公告)日：2005-09-06

    申请号：US10439642

    申请日：2003-05-15

    Applicant: Xia Sheng ,  Nobuyoshi Koshida ,  Huei-Pei Kuo

    Inventor： Xia Sheng ,  Nobuyoshi Koshida ,  Huei-Pei Kuo

    IPC: H01J1/312 ,  H01J1/308 ,  H01J9/02 ,  H10L21/00

    CPC classification number: H01J1/308 ,  H01J9/022 ,  Y10S438/96

    Abstract: A high emission electron emitter and a method of fabricating a high emission electron emitter are disclosed. A high emission electron emitter includes an electron injection layer, an active layer of high porosity porous silicon material in contact with the electron injection layer, a contact layer of low porosity porous silicon material in contact with the active layer and including an interface surface with a heavily doped region, and an optional top electrode in contact with the contact layer. The contact layer reduces contact resistance between the active layer and the top electrode and the heavily doped region reduces resistivity of the contact layer thereby increasing electron emission efficiency and stable electron emission from the top electrode. The electron injection layer is made from an electrically conductive material such as n+ semiconductor, n+ single crystal silicon, a metal, a silicide, or a nitride. The active layer and the contact layer are formed in a layer of silicon material that is deposited on the electron injection layer and then electrochemically anodized in a hydrofluoric acid solution. Prior to the anodization, the interface surface can be doped to form the heavily doped region. The layer of silicon material can be porous epitaxial silicon, porous polysilicon, porous amorphous silicon, and porous silicon carbide.

    Abstract translation: 公开了高发射电子发射体和制造高发射电子发射体的方法。 高发射电子发射体包括电子注入层，与电子注入层接触的高孔隙率多孔硅材料的有源层，与活性层接触的低孔隙率多孔硅材料的接触层， 重掺杂区域和与接触层接触的可选顶部电极。 接触层降低了有源层和顶部电极之间的接触电阻，并且重掺杂区域降低了接触层的电阻率，从而提高了电子发射效率和从顶部电极稳定的电子发射。 电子注入层由诸如n +半导体，n +单晶硅，金属，硅化物或氮化物的导电材料制成。 有源层和接触层形成在沉积在电子注入层上的硅材料层中，然后在氢氟酸溶液中电化学阳极氧化。 在阳极氧化之前，可以将界面表面掺杂以形成重掺杂区域。 硅材料层可以是多孔外延硅，多孔多晶硅，多孔非晶硅和多孔碳化硅。

    Planar electron emitter apparatus with improved emission area and method of manufacture
    19.
    发明申请
    Planar electron emitter apparatus with improved emission area and method of manufacture 失效

    公开(公告)号：US20050156500A1

    公开(公告)日：2005-07-21

    申请号：US11083680

    申请日：2005-03-16

    Applicant: Henryk Birecki ,  Vu Binh

    Inventor： Henryk Birecki ,  Vu Binh

    IPC: H01J1/304 ,  G11B9/10 ,  H01J1/308 ,  H01J1/312 ,  H01J1/02

    CPC classification number: B82Y10/00 ,  G11B9/10 ,  H01J1/308 ,  H01J1/312

    Abstract: The field emission planar electron emitter device is disclosed that has an emitter electrode, an extractor electrode, and a planar emitter emission layer, electrically coupled to the emitter electrode and the extractor electrode. The planar electron emitter is configured to bias electron emission in a central region of the emission layer in preference to an outer region thereof. One structural example that provides this biasing is achieved by fabricating the planar emitter emission layer so that it has an outer perimeter that is thicker in depth than at an interior portion of the planar emitter emission layer, which reduces electron beam emission at the outer perimeter when an electric field is applied between the emitter electrode and the extractor electrode. The electric field draws emission electrons from the surface of the planar emitter emission layer towards the extractor electrode at a higher rate at the interior portion than at the outer perimeter. The planar electron emitter device further includes a focusing electrode electrically coupled to the planar electron emitter.

    Planar electron emitter apparatus with improved emission area and method of manufacture
    20.
    发明授权
    Planar electron emitter apparatus with improved emission area and method of manufacture 失效

    公开(公告)号：US06914374B2

    公开(公告)日：2005-07-05

    申请号：US10043376

    申请日：2002-01-09

    Applicant: Henryk Birecki ,  Vu Thien Binh

    Inventor： Henryk Birecki ,  Vu Thien Binh

    IPC: H01J1/304 ,  G11B9/10 ,  H01J1/308 ,  H01J1/312 ,  H01J1/02 ,  H01J1/30

    CPC classification number: B82Y10/00 ,  G11B9/10 ,  H01J1/308 ,  H01J1/312

    Abstract: The field emission planar electron emitter device is disclosed that has an emitter electrode, an extractor electrode, and a planar emitter emission layer, electrically coupled to the emitter electrode and the extractor electrode. The planar electron emitter is configured to bias electron emission in a central region of the emission layer in preference to an outer region thereof. One structural example that provides this biasing is achieved by fabricating the planar emitter emission layer so that it has an outer perimeter that is thicker in depth than at an interior portion of the planar emitter emission layer, which reduces electron beam emission at the outer perimeter when an electric field is applied between the emitter electrode and the extractor electrode. The electric field draws emission electrons from the surface of the planar emitter emission layer towards the extractor electrode at a higher rate at the interior portion than at the outer perimeter. The planar electron emitter device further includes a focusing electrode electrically coupled to the planar electron emitter.

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