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公开(公告)号：US20180157283A1
公开(公告)日：2018-06-07
申请号：US15690290
申请日：2017-08-30
Inventor： Xin MING , Di GAO , Jiahao ZHANG , Xuan ZHANG , Xiuling WEI , Yao WANG , Zhuo WANG , Bo ZHANG
CPC classification number: G05F1/575 , H03F3/4521 , H03F2203/45288
Abstract: A low-dropout regulator with super transconductance structure relates to the field of power management technology. The super-transconductance structure refers to the circuit structure in which the voltage signal is converted into a current signal and amplified with a high magnification. The error amplifier EA in the present invention uses the super transconductance structure. The differential input pair of the error amplifier EA samples the difference between the feedback voltage VFB and the dynamic reference voltage VREF1. The difference is converted into a small signal current, which goes through a first-stage of current mirror to be amplified by K1, and through a second-stage of current mirror to be amplified by K2. The amplified signal is used to regulate the gate of the adjustment transistor MP. The error amplifier EA with the super transconductance structure is used to expand the bandwidth of the error amplifier EA.
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公开(公告)号：US20180061972A1
公开(公告)日：2018-03-01
申请号：US15600795
申请日：2017-05-22
Inventor： Xiaorong LUO , Gaoqiang DENG , Kun ZHOU , Qing LIU , Linhua HUANG , Tao SUN , Bo ZHANG
IPC: H01L29/739 , H01L29/74 , H01L29/10 , H01L29/08 , H01L29/861
CPC classification number: H01L29/7397 , H01L29/0634 , H01L29/0804 , H01L29/0834 , H01L29/1095 , H01L29/7395 , H01L29/7416 , H01L29/8611
Abstract: The present invention relates to the technical field of the power semiconductor device relates to a reverse conducting insulated gate bipolar transistor (RC-IGBT). The RC-IGBT comprises a P-type region, an N-type emitter region, a P-type body contact region, a dielectric trench, a collector region, and an electrical filed cutting-off region. The beneficial effect of the present invention is that, when compared with traditional RC-IGBT, the IGBT of the present invention can eliminate negative resistance effect and effectively improve the performance of forward and reverse conduction.
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公开(公告)号：US09891644B1
公开(公告)日：2018-02-13
申请号：US15387678
申请日：2016-12-22
Inventor： Xin Ming , Tiansheng Li , Jun Xu , Zhuo Wang , Bo Zhang
Abstract: A low-dropout regulator, including: a dynamic pole tracking circuit having an active load, a voltage-to-current converter, a current amplifier, a bias circuit, a regulating transistor, a first feedback resistor, a second feedback resistor, and a first capacitor. The dynamic pole tracking circuit includes: a first PMOS, a second PMOS, a first resistor, and a second resistor. The voltage-to-current converter includes: a first NMOS, a second NMOS, a third NMOS, a fourth NMOS, a fifth NMOS, a sixth NMOS, a seventh NMOS, an eighth NMOS, a third PMOS, a fourth PMOS, a seventh PMOS, an eighth PMOS. The current amplifier includes: a fifth PMOS, a sixth PMOS, a ninth NMOS, a tenth NMOS, and a third resistor. The bias circuit includes: a ninth PMOS, a tenth PMOS, an eleventh PMOS, an eleventh NMOS, a twelfth NMOS, a thirteenth NMOS, and a fourth resistor.
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公开(公告)号：US20180013384A1
公开(公告)日：2018-01-11
申请号：US15711430
申请日：2017-09-21
Inventor： Feng TAN , Duyu QIU , Peng YE , Jiquan CHEN , Lianping GUO , Hao ZENG , Shuo ZHANG , Ke TANG
CPC classification number: H03B5/04 , H03B5/366 , H03L1/02 , H03L1/023 , H03L1/028 , H03L7/00 , H03L7/06
Abstract: Disclosed is a temperature-compensated crystal oscillator based on analog circuit; a closed-loop compensation architecture determines the temperature compensation of a crystal oscillator. The power splitter divides the VCXO's current output signal with frequency f=f0+Δf into two signals, one signal to output of the TCXO and the other signal is sent to an analog frequency-voltage conversion circuit. According to the frequency of the VCXO's current output signal, the analog frequency-voltage conversion circuit produces a voltage signal V(T), which corresponds to current ambient temperature. The difference between V(T) and a reference voltage signal Vref is produced and amplified to obtain a compensation voltage signal ΔV through a voltage matching circuit. ΔV is smoothed by a filter, then sent to the voltage control terminal of the VCXO to make the VCXO generate a stable signal with desired frequency f0, to compensate the frequency of the VCXO's output signal when the ambient temperature is changed.
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205.发明授权公开(公告)号：US09841349B2
公开(公告)日：2017-12-12
申请号：US15382671
申请日：2016-12-18
Inventor： Zinan Wang , Yun Fu , Yunjiang Rao
CPC classification number: G01M11/3181
Abstract: A method for distributedly measuring polarization transmission matrices of an optical fiber includes steps of: inputting a fully polarized pulse into the optical fiber with linear birefringence only; and demodulating polarization states of Rayleigh backscattered light at different points on the optical fiber from a pulse input end; after demodulating, dividing the polarization states of the Rayleigh backscattered light into Q groups in sequence, wherein every three polarization states are divided into one group; calculating a transmission matrix of Group N; and solving the equation set using a numerical analysis method for obtaining multiple solutions, and screening the multiple solutions according to characteristics of the polarization transmission matrix, wherein each time of screening provides a unique solution Mx(N) of the equation set; continually updating MA values for iteration, so as to obtain the distribution of polarization transmission matrices of the optical fiber.
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Patent Agency Ranking
公开(公告)号：US09819195B2
公开(公告)日：2017-11-14
申请号：US14655520
申请日：2013-12-27
Applicant: UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA , SICHUAN SUNFOR LIGHT CO., LTD.
Inventor： Ning Ning , Yongming Jia , Wenbin Chen , Chunyi Feng , Dongming Li , Mian Yang , Zhengyong Feng , Wentao Long
CPC classification number: H02J4/00 , H05B33/0812 , H05B33/083 , Y02B20/343 , Y02B20/345 , Y10T307/43
Abstract: The present disclosure discloses a multipath current source switching device, including a switching control unit, N current paths, and N loads. Each current path is formed by a constant current source circuit and a switching circuit. One terminal of a first load is coupled to a load power supply, and the other terminal of the first load is coupled to an output terminal of a constant current source circuit of a first current path and one terminal of a second load; one terminal of an ith load is coupled to the other terminal of an (i−1)th load and an output terminal of a constant current source circuit of an ith current path; and the switching control unit controls an output current of a corresponding constant current source circuit through a corresponding switching circuit. When the circuits are switched, an output voltage of a switching circuit of a current path to be switched off is decreased to zero according to a preset voltage variation quantity, and an output voltage of a switching circuit of a current path to be switched on is increased to a highest operating voltage according to the preset voltage variation quantity, such that a current on a load does not exceed a preset current and is not zero during switching. N is an integer not less than 2, and i is equal to 2, 3, 4, . . . , N.
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公开(公告)号：US20170279410A1
公开(公告)日：2017-09-28
申请号：US15620836
申请日：2017-06-13
Inventor： Yaxin Zhang , Han Sun , Yuncheng Zhao , Shixiong Liang , Ziqiang Yang
Abstract: A terahertz wave fast modulator based on coplanar waveguide combining with transistor is disclosed. The terahertz waves are inputted through a straight waveguide structure, and then are coupled through a probe structure onto a core part of the present invention, which includes a suspended coplanar waveguide structure and a modulation unit with high electron mobility transistor, wherein the suspended coplanar waveguide structure is formed by three metal wires and a semiconductor substrate; and the modulation unit with high electron mobility transistor is located between adjacent metal transmission strips of the coplanar waveguide structure. Transmission characteristics of the terahertz waves in the coplanar waveguide structure are changed through the switching on/off of the modulation unit, so as to fast modulate the amplitudes and phases of the terahertz waves, and finally the modulated terahertz waves are transmitted through a probe—waveguide structure.
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公开(公告)号：US20170277575A1
公开(公告)日：2017-09-28
申请号：US15619178
申请日：2017-06-09
Inventor： Jiao Wang , Cheng Zuo , Hongfang Yu
IPC: G06F9/50 , H04L12/911 , G06F9/455 , H04L29/08
CPC classification number: G06F9/5077 , G06F9/45558 , G06F9/5066 , G06F2009/4557 , G06F2009/45595 , H04L29/08 , H04L47/82 , H04L67/10 , Y02D10/22 , Y02D10/36 , Y02D50/10
Abstract: A virtual data center resource mapping method and device. The method includes: S202: receiving a VDC resource request, where the VDC resource request carries a virtual machine distribution identifier, and the virtual machine distribution identifier is used to indicate a maximum quantity K of virtual machines that can be borne by a single physical server; S204: selecting, from an unmapped virtual machine set Q in the VDC resource request, M virtual machines to form a partition P; S206: selecting a target physical server that can provide a physical resource required by the partition P, and mapping the partition P to the target physical server; and S208: removing, from the set Q, the M virtual machines on which resource mapping has been performed, and repeatedly performing steps 204, 206 and 208 until no virtual machine on which resource mapping has not been performed exists in the set Q.
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公开(公告)号：US20170251364A1
公开(公告)日：2017-08-31
申请号：US15310780
申请日：2015-08-24
Inventor： Hong WEN , Jinling ZHANG , Runfa LIAO , Jie TANG , Fei PAN
IPC: H04W12/06
CPC classification number: H04W12/06 , H04L9/3226 , H04L9/3247 , H04L2209/80 , H04W72/0446
Abstract: A cross layer, authentication method based on radio frequency fingerprint, it, includes the following steps: S1. In the first time slot, the legitimate transmitter A sends the first packet to the legitimate receiver B, and then B identifies the first data packet by the upper layer authentication; S2. The legitimate recipient B extracts the RF fingerprint eigenvector of the legitimate sender A, and stores it in the memory of the legitimate receiver B; S3. In the next time slot, the sender X sends the second packet to the legitimate receiver B, and the legitimate recipient B extracts the RF fingerprint eigenvector of the sender X; S4. Set sample of the RF fingerprint eigenvector; S5. legitimate receiver B estimates the similarity between the RF fingerprint eigenvector of the sender X and sample of the RF fingerprint eigenvector. This invention is in advantage of low computational complexity, small delay and high precision.
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公开(公告)号：US09741837B2
公开(公告)日：2017-08-22
申请号：US15209745
申请日：2016-07-13
Applicant: UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA , INSTITUTE OF ELECTRONIC AND INFORMATION ENGINEERING IN DONGGUAN, UESTC
Inventor： Jinping Zhang , Yadong Shan , Gaochao Xu , Xin Yao , Jingxiu Liu , Zehong Li , Min Ren , Bo Zhang
IPC: H01L29/73 , H01L29/739 , H01L29/06 , H01L29/10 , H01L29/423
CPC classification number: H01L29/7397 , H01L29/0634 , H01L29/1095 , H01L29/4236
Abstract: A bidirectional IGBT device, including a cellular structure including: two MOS structures, a substrate drift layer, two highly doped buried layers operating for carrier storage or field stop, two metal electrodes, and isolating dielectrics. Each MOS structure includes: a body region, a heavily doped source region, a body contact region, and a gate structure. Each gate structure includes: a gate dielectric and a gate conductive material. The two MOS structures are symmetrically disposed on the top surface and the back surface of the substrate drift layer. The heavily doped source region and the body contact region are disposed in the body region and independent from each other, and both surfaces of the heavily doped source region and the body contact region are connected to each of the two metal electrodes. The gate dielectric separates the gate conductive material from a channel region of each of the MOS structures.
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