OBJECT SIMILARITY SEARCH IN HIGH-DIMENSIONAL VECTOR SPACES
    202.
    发明申请
    OBJECT SIMILARITY SEARCH IN HIGH-DIMENSIONAL VECTOR SPACES 有权
    对象相似性搜索在高维矢量空间

    公开(公告)号:US20080263042A1

    公开(公告)日:2008-10-23

    申请号:US11737075

    申请日:2007-04-18

    CPC classification number: G06F17/3025 G06F17/30864 G06K9/4642 G06K9/6282

    Abstract: An object search system generates a hierarchical clustering of objects of a collection based on similarity of the objects. The object search system generates a separate hierarchical clustering of objects for multiple features of the objects. To identify objects similar to a target object, the object search system first generates a feature vector for the target object. For each feature of the feature vector, the object search system uses the hierarchical clustering of objects to identify the cluster of objects that is most “feature similar” to that feature of the target object. The object search system indicates the similarity of each candidate object based on the features for which the candidate object is similar.

    Abstract translation: 对象搜索系统基于对象的相似性生成集合的对象的分层聚类。 对象搜索系统为对象的多个特征生成对象的单独层次聚类。 为了识别与目标对象类似的对象,对象搜索系统首先生成目标对象的特征向量。 对于特征向量的每个特征,对象搜索系统使用对象的分层聚类来识别与目标对象的特征最“特征相似”的对象簇。 对象搜索系统基于候选对象相似的特征来指示每个候选对象的相似性。

    Method and Equipment of Producing Graphite and Metallic Catalyst Composite for Diamond Synthesis
    204.
    发明申请
    Method and Equipment of Producing Graphite and Metallic Catalyst Composite for Diamond Synthesis 有权
    生产用于金刚石合成的石墨和金属催化剂复合材料的方法和设备

    公开(公告)号:US20080160191A1

    公开(公告)日:2008-07-03

    申请号:US11966986

    申请日:2007-12-28

    Abstract: This invention releases the preparation method and equipment of graphite and catalyst composite for a kind of synthetic diamond. Firstly the clean graphite particle shall be placed into the heating chamber for pre-heating, the lower limit of the heating temperature shall be higher than the boiling point of the coated carbonyl metal complex and the upper limit of the heating temperature shall be set according to the thickness of the coating needed; secondly, the heated graphite particle will be fed into the coating room with vibrator or agitator and the steam of carbonyl metal complex shall be input for coating; finally the coated graphite particle shall be fed into the cooling and passivation room for cooling and passivation of the discharging materials or enter the next round circle of heating and coating. As to the graphite and catalyst composite prepared by this invention, the surface of each graphite particle is plated with metal layer and the continuous metallic contact is formed between the particles of the synthetic cylinder prepared by it. In synthesis, it is easy to form the continuous metallic film so as to continuously feed the carbon to the diamond crystal nucleus to promote the crystal nucleus growing into perfect diamond crystal.

    Abstract translation: 本发明释放了一种人造金刚石的石墨和催化剂复合材料的制备方法和设备。 首先将干净的石墨颗粒放入加热室进行预热,加热温度的下限应高于涂覆的羰基金属络合物的沸点,加热温度的上限应根据 所需涂层的厚度; 其次,加热的石墨颗粒将用振动器或搅拌器进入涂层室,并且输入羰基金属络合物的蒸汽进行涂布; 最后将涂覆的石墨颗粒送入冷却和钝化室,以排出物料的冷却和钝化,或进入下一个加热和涂层的圆周。 对于通过本发明制备的石墨和催化剂复合物,每个石墨颗粒的表面镀有金属层,并且在由其制备的合成圆筒的颗粒之间形成连续的金属接触。 在合成中,容易形成连续金属膜,以便将碳连续地供给到金刚石晶核,以促进晶核生长成完美的金刚石晶体。

    Durable, Inorganic, Absorptive, Ultra-Violet, Grid Polarizer
    205.
    发明申请
    Durable, Inorganic, Absorptive, Ultra-Violet, Grid Polarizer 有权
    耐用,无机,吸收,超紫,网格偏振器

    公开(公告)号:US20080055723A1

    公开(公告)日:2008-03-06

    申请号:US11767361

    申请日:2007-06-22

    CPC classification number: G02B5/3075 G02B5/3058 G02B5/3091

    Abstract: An inorganic, dielectric grid polarizer device includes a stack of film layers disposed over a substrate. Each film layer is formed of a material that is both inorganic and dielectric. Adjacent film layers each have different refractive indices. At least one of the film layers is discontinuous to form a form-birefringent layer with an array of parallel ribs having a period less than 400 nm. Another layer, different than the form-birefringent layer, is formed of an optically absorptive material for the ultra-violet spectrum.

    Abstract translation: 无机介电栅极偏振器装置包括设置在基板上方的一层薄膜层。 每个膜层由无机和电介质的材料形成。 相邻的膜层各自具有不同的折射率。 膜层中的至少一层是不连续的,以形成具有周期小于400nm的平行肋阵列的形式双折射层。 与形成双折射层不同的另一层由用于紫外光谱的光学吸收材料形成。

    Optical Data Storage System with an Inorganic, Dielectric Grid Polarizer
    206.
    发明申请
    Optical Data Storage System with an Inorganic, Dielectric Grid Polarizer 审中-公开
    具有无机,电介质网格偏振器的光学数据存储系统

    公开(公告)号:US20080055720A1

    公开(公告)日:2008-03-06

    申请号:US11469241

    申请日:2006-08-31

    CPC classification number: G02B5/3041 G02B27/283

    Abstract: An optical data storage system includes a laser diode to produce at least one light beam. An inorganic, dielectric grid polarizing beam splitter is disposable in the light beam to transmit a polarized light beam, and includes a stack of film layers disposed over a substrate. Each film layer is formed of a material that is both inorganic and dielectric. Adjacent film layers have different refractive indices. At least one of the film layers is discontinuous to form a form birefringent layer with an array of parallel ribs with a pitch of less than 390 nm. A drive carries a disc medium disposed in the polarized light beam to reflect a modified light beam. The grid polarizer is disposable in the modified light beam to separate the modified light beam into a reflected beam and a transmitted beam. A photo-detector is disposable in the reflected or transmitted beam.

    Abstract translation: 光学数据存储系统包括产生至少一个光束的激光二极管。 无机介电栅极偏振分束器在光束中是一次性的,以透射偏振光束,并且包括设置在基板上方的一层薄膜层。 每个膜层由无机和电介质的材料形成。 相邻的膜层具有不同的折射率。 至少一个膜层是不连续的,以形成具有间距小于390nm的平行肋阵列的形式双折射层。 驱动器携带设置在偏振光束中的光盘介质以反射修改的光束。 栅极偏振器在修改的光束中是一次性的,以将修改的光束分离成反射光束和透射光束。 光检测器在反射或透射光束中是一次性的。

    Cube wire-grid polarizing beam splitter
    207.
    发明申请
    Cube wire-grid polarizing beam splitter 审中-公开
    立方线栅偏振分束器

    公开(公告)号:US20070297052A1

    公开(公告)日:2007-12-27

    申请号:US11478459

    申请日:2006-06-26

    CPC classification number: G02B5/3058 G02B5/1809

    Abstract: A cube wire-grid polarizing beam splitter includes a pair of prisms secured together to form a cube. An array of parallel conductive wires is disposed between the pair of prisms. A pair of continuous film layers is disposed on one side of the wires between the wires and one of the pair of prisms with an intermediate film layer adjacent the prism having a refractive index greater than both i) a refractive index of a rear film layer adjacent the plate wire grid polarizer, and ii) a refractive index of an adjacent prism. A layer of ribs is disposed on another side of the wires between the wires and another of the pair of prisms, the ribs being aligned with and supporting the array of parallel conductive wires.

    Abstract translation: 立方体线栅偏振分束器包括固定在一起以形成立方体的一对棱镜。 平行导线阵列设置在该对棱镜之间。 一对连续的薄膜层设置在导线之间的导线和一对棱镜中的一个之间,其中邻近棱镜的中间薄膜层的折射率大于两者。i)相邻的后膜层的折射率 板状线栅偏振器,以及ii)相邻棱镜的折射率。 一层肋设置在导线与另一对棱镜之间的导线的另一侧上,肋与平行导线的阵列对准并支撑。

    Tunneling-enhanced floating gate semiconductor device
    208.
    发明申请
    Tunneling-enhanced floating gate semiconductor device 审中-公开
    隧道增强浮栅半导体器件

    公开(公告)号:US20060220096A1

    公开(公告)日:2006-10-05

    申请号:US11133718

    申请日:2005-05-19

    Applicant: Bin Wang Yanjun Ma

    Inventor: Bin Wang Yanjun Ma

    Abstract: Tunneling-enhanced, floating gate semiconductor devices and methods for forming such devices are described. In one embodiment, a p-n junction device is formed with a floating gate that is partially doped with n- and p-type impurities. Two regions on either side of an n+ doped region in the floating gate and a surface region on a substrate are implanted with the impurities based on a number of predetermined configurations. In another embodiment, a transistor type semiconductor device is configured with implanted impurities in two regions of its floating gate as well as two surface regions in its substrate. Enhanced tunneling junction enables use of lower tunneling voltages in applications such as programming NVM cells.

    Abstract translation: 描述了隧道增强型浮栅半导体器件及其形成方法。 在一个实施例中,p-n结器件形成有部分掺杂有n型和p型杂质的浮栅。 基于多个预定配置,在浮置栅极中的n +掺杂区域的任一侧上的两个区域和衬底上的表面区域注入杂质。 在另一个实施例中,晶体管型半导体器件被配置为在其浮动栅极的两个区域中具有注入的杂质以及其衬底中的两个表面区域。 增强的隧道结使得能够在诸如编程NVM单元之类的应用中使用较低的隧道电压。

    Plasma processing method, detecting method of completion of seasoning, plasma processing apparatus and storage medium
    210.
    发明申请
    Plasma processing method, detecting method of completion of seasoning, plasma processing apparatus and storage medium 有权
    等离子体处理方法,完成调味料的检测方法,等离子体处理装置和储存介质

    公开(公告)号:US20050126709A1

    公开(公告)日:2005-06-16

    申请号:US10937905

    申请日:2004-09-10

    CPC classification number: H01L21/67253

    Abstract: With analysis data in the prior art, it is difficult to find out if a change regarded as a judgmental standard of the completion of seasoning has come from a change due to the seasoning, namely, change in condition of the interior of a processing container or come from another change based on a temperature change among respective dummy wafers and furthermore, it is difficult to judge whether the seasoning has been completed or not. Therefore, a plasma processing method of the present invention, which is a method for detecting the completion of seasoning in performing the seasoning by loading dummy wafers W into a processing container 2 of a plasma processing apparatus 1, includes a process of creating a predictive formula for predicting the completion of seasoning and another process of detecting the completion of seasoning in performing the seasoning, based on the predictive formula. The creation of the predictive formula is accomplished by performing a multivariate analysis against a plurality of measured data that can be obtained by first supplying dummy wafers W into the processing container 2, cooling down the interior of the processing container 2 and supplying a plurality of dummy wafers W into the processing container 2 again.

    Abstract translation: 通过现有技术的分析数据,难以确定作为调味品完成的判断标准的变化是否来自调味品的变化,即处理容器的内部状况的变化或 来自基于各个虚拟晶片之间的温度变化的另一变化,此外,难以判断调味是否已经完成。 因此,本发明的等离子体处理方法是通过将虚拟晶片W装载到等离子体处理装置1的处理容器2中来进行调味的完成调查的方法,包括:生成预测式 根据预测公式预测调味料的完成情况和进行调味料调查完成情况的另一个过程。 通过对多个测量数据执行多变量分析来实现预测公式的创建,该多个测量数据可以通过首先将虚拟晶片W提供到处理容器2中,冷却处理容器2的内部并提供多个虚拟 晶片W再次进入处理容器2。

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