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    OMNIDIRECTIONAL ANTENNA
    211.
    发明申请
    OMNIDIRECTIONAL ANTENNA 有权

    公开(公告)号：US20100026599A1

    公开(公告)日：2010-02-04

    申请号：US12525308

    申请日：2008-01-23

    Applicant: Sung-Chul Lee

    Inventor： Sung-Chul Lee

    IPC: H01Q1/38

    CPC classification number: H01Q1/36 ,  H01Q9/40

    Abstract: The omnidirectional antenna of the present invention comprises a dielectric core 20 of ceramic material which has a longitudinal hole 21 formed in the center; a strip line 30 which is bent to fit the circumference of the dielectric core 20 by a press-forming method and is covered over the upper outer circumference of the dielectric core; a lower cap 40 which is inserted over the bottom end of the dielectric core and has a hole formed at the center of the bottom; a feeder 50 which is passed through and inserted from down to up into the holes formed in the bottom cap and the dielectric core and the top end of which is connected with the strip line 30 on the upper surface of the dielectric core; and a strip line fixing means 60 for combining the lower cap and strip line to the dielectric core.

    Abstract translation: 本发明的全向天线包括陶瓷材料的介质芯20，其具有形成在中心的纵向孔21; 带状线30，其通过压制成型方法弯曲成与电介质芯20的圆周相配合，并且覆盖在电介质芯的上外周上; 下盖40，其插入在电介质芯的底端上并且具有形成在底部中心的孔; 进料器50，其从下到上穿过并插入到形成在底盖和介质芯中的孔中，并且其顶端与介电芯的上表面上的带状线30连接; 以及用于将下盖和带状线组合到电介质芯的带状线固定装置60。

    REACTION VESSEL AND REACTION DEVICE
    216.
    发明申请
    REACTION VESSEL AND REACTION DEVICE 有权
    反应容器和反应装置

    公开(公告)号：US20080241019A1

    公开(公告)日：2008-10-02

    申请号：US11877562

    申请日：2007-10-23

    Applicant: Sung-chul Lee ,  Ju-yong Kim ,  Yong-kul Lee ,  Man-seok Han ,  Jun-sic Kim ,  Chan-ho Lee ,  Jin-goo Ahn

    Inventor： Sung-chul Lee ,  Ju-yong Kim ,  Yong-kul Lee ,  Man-seok Han ,  Jun-sic Kim ,  Chan-ho Lee ,  Jin-goo Ahn

    IPC: B01J15/00 ,  B01J19/00

    CPC classification number: B01J19/249 ,  B01J23/40 ,  B01J2219/2455 ,  B01J2219/2459 ,  B01J2219/246 ,  B01J2219/2465 ,  B01J2219/2479 ,  B01J2219/2485

    Abstract: Provided is a reaction vessel for a fuel cell, and more particularly to a reaction vessel exhibiting improved thermal efficiency, and a reaction device for a steam reforming reaction for a fuel cell. The reaction device includes a cylindrical reaction catalyst chamber on which a target reaction catalyst for a predetermined target reaction is disposed; and a tubular oxidation catalyst chamber surrounding the reaction catalyst chamber, comprising an oxidation reaction catalyst therein. The reaction device according features an increased contact area between catalyst and gas, and rapidly heating of the gas in contact with the catalyst to a desired reaction temperature.

    Abstract translation: 提供一种用于燃料电池的反应容器，更具体地说，涉及一种表现出改善的热效率的反应容器，以及用于燃料电池的蒸汽重整反应的反应装置。 反应装置包括：圆筒状的反应催化剂室，配置有用于规定的目标反应的目标反应催化剂; 以及围绕反应催化剂室的管状氧化催化剂室，其中包含氧化反应催化剂。 反应装置的特征在于催化剂和气体之间的接触面积增加，并且将与催化剂接触的气体快速加热到所需的反应温度。

    Data storage device using magnetic domain wall movement and method of operating the same
    218.
    发明申请
    Data storage device using magnetic domain wall movement and method of operating the same 有权
    使用磁畴壁运动的数据存储装置及其操作方法

    公开(公告)号：US20080100963A1

    公开(公告)日：2008-05-01

    申请号：US11730121

    申请日：2007-03-29

    Applicant: Sung-chul Lee ,  Sung-hoon Choa ,  Eun-sik Kim

    Inventor： Sung-chul Lee ,  Sung-hoon Choa ,  Eun-sik Kim

    IPC: G11B5/74

    CPC classification number: G11C11/14 ,  G11C19/0808 ,  Y10S977/933 ,  Y10S977/935

    Abstract: Provided are a data storage device using a magnetic domain wall movement and a method of operating the data storage device. The data storage device includes a magnetic layer which has a plurality of magnetic domains, a current applying unit which applies current for a magnetic domain wall movement to the magnetic layer, and a head for reading and writing, wherein the magnetic layer comprises a plurality of perpendicular magnetic layers formed on a substrate in a plurality of rows and columns, and a horizontal magnetic layer formed on the perpendicular magnetic layers to connect the perpendicular magnetic layers.

    Abstract translation: 提供了使用磁畴壁移动的数据存储装置和操作数据存储装置的方法。 该数据存储装置包括具有多个磁畴的磁性层，向磁性层施加用于磁畴壁运动的电流的电流施加单元和用于读取和写入的磁头，其中该磁性层包括多个 在多个行和列中的基板上形成的垂直磁性层，以及形成在垂直磁性层上以连接垂直磁性层的水平磁性层。

    DATA STORAGE DEVICE USING MAGNETIC DOMAIN WALL MOVEMENT AND METHOD OF OPERATING THE SAME
    219.
    发明申请
    DATA STORAGE DEVICE USING MAGNETIC DOMAIN WALL MOVEMENT AND METHOD OF OPERATING THE SAME 有权
    使用磁畴壁移动的数据存储装置及其操作方法

    公开(公告)号：US20080094760A1

    公开(公告)日：2008-04-24

    申请号：US11752397

    申请日：2007-05-23

    Applicant: Sung-chul Lee ,  Sung-hoon Choa ,  Yong-su Kim

    Inventor： Sung-chul Lee ,  Sung-hoon Choa ,  Yong-su Kim

    IPC: G11B5/66

    CPC classification number: G11C11/14 ,  G11B5/66 ,  G11C19/0808

    Abstract: Provided are a data storage device using a magnetic domain wall movement and a method of operating the data storage device. The data storage device includes a magnetic layer including a plurality of magnetic domains, first and second ferromagnetic pinned layers formed on lower and upper surfaces of the magnetic layer, respectively, and having opposite magnetization directions, first and second insulating spacers interposed between the first and second ferromagnetic pinned layers and the magnetic layer, respectively, and an energy supplying unit applying energy to the magnetic layer for a magnetic domain wall movement.

    Abstract translation: 提供了使用磁畴壁移动的数据存储装置和操作数据存储装置的方法。 数据存储装置包括：包含多个磁畴的磁性层，分别形成在磁性层的下表面和上表面上并且具有相反的磁化方向的第一和第二铁磁固定层，第一和第二绝缘垫片插入在第一和 第二铁磁钉扎层和磁性层，以及向磁性层施加能量以供磁畴壁运动的能量供给单元。

    MEMORY DEVICE EMPLOYING MAGNETIC DOMAIN WALL MOVEMENT
    220.
    发明申请
    MEMORY DEVICE EMPLOYING MAGNETIC DOMAIN WALL MOVEMENT 有权
    使用磁性域墙运动的记忆装置

    公开(公告)号：US20080068881A1

    公开(公告)日：2008-03-20

    申请号：US11851049

    申请日：2007-09-06

    Applicant: Chee-kheng LIM ,  Eun-sik KIM ,  Sung-chul LEE

    Inventor： Chee-kheng LIM ,  Eun-sik KIM ,  Sung-chul LEE

    IPC: G11C11/15

    CPC classification number: G11C11/14 ,  G11C19/0808 ,  G11C19/0816 ,  G11C19/0841 ,  Y10S977/933

    Abstract: Provided is a memory device employing magnetic domain wall movement. The memory device includes a first track, an interconnecting layer, and a second track. The first track including a magnetic material is formed in a first direction. The interconnecting layer is formed on the first track. The second track including a magnetic material is formed in a second direction on the interconnecting layer.

    Abstract translation: 提供了采用磁畴壁运动的存储器件。 存储器件包括第一轨道，互连层和第二轨道。 包括磁性材料的第一轨迹形成在第一方向上。 互连层形成在第一轨道上。 包括磁性材料的第二轨道在互连层上沿第二方向形成。

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