公开(公告)号：US20230144419A1

公开(公告)日：2023-05-11

申请号：US18085338

申请日：2022-12-20

Applicant: ASML NETHERLANDS B.V.

Inventor： John Colin TRAVERS ,  Federico BELLI ,  Malte Christian BRAHMS ,  Andreas Johannes Antonius BROUNS ,  Ronald Franciscus Herman HUGERS

IPC: H01S3/067 ,  G02F1/35 ,  G02B6/02 ,  G03F7/20

CPC classification number: H01S3/06741 ,  G02F1/3528 ,  G02B6/02328 ,  G03F7/70625

Abstract: A broadband radiation source device, including a fiber assembly having a plurality of optical fibers, each optical fiber being filled with a gas medium, wherein the broadband radiation source device is operable such that subsets of the optical fibers are independently selectable for receiving a beam of input radiation so as to generate a broadband output from only a subset of the plurality of optical fibers at any one time.

公开(公告)号：US11644428B2

公开(公告)日：2023-05-09

申请号：US16719107

申请日：2019-12-18

Applicant: ASML Netherlands B.V.

Inventor： Arie Jeffrey Den Boef

IPC: G01B11/00 ,  G01N21/956 ,  G03F7/20

CPC classification number: G01N21/95607 ,  G03F7/7015 ,  G03F7/70633

Abstract: Systems, methods, and apparatus are provided for determining overlay of a pattern on a substrate with a mask pattern defined in a resist layer on top of the pattern on the substrate. A first grating is provided under a second grating, each having substantially identical pitch to the other, together forming a composite grating. A first illumination beam is provided under an angle of incidence along a first horizontal direction. The intensity of a diffracted beam from the composite grating is measured. A second illumination beam is provided under the angle of incidence along a second horizontal direction. The second horizontal direction is opposite to the first horizontal direction. The intensity of the diffracted beam from the composite grating is measured. The difference between the diffracted beam from the first illumination beam and the diffracted beam from the second illumination beam, linearly scaled, results in the overlay error.

公开(公告)号：US20230139746A1

公开(公告)日：2023-05-04

申请号：US18075589

申请日：2022-12-06

Applicant: ASML Netherlands B.V.

Inventor： Yezheng Tao ,  Daniel John William Brown ,  Alexander Anthony Schafgans ,  Palash Parijat Das

IPC: H05G2/00 ,  H01S3/23 ,  H01S3/00

Abstract: An optical source for a photolithography tool includes a source configured to emit a first beam of light and a second beam of light, the first beam of light having a first wavelength, and the second beam of light having a second wavelength, the first and second wavelengths being different; an amplifier configured to amplify the first beam of light and the second beam of light to produce, respectively, a first amplified light beam and a second amplified light beam; and an optical isolator between the source and the amplifier, the optical isolator including: a plurality of dichroic optical elements, and an optical modulator between two of the dichroic optical elements.

公开(公告)号：US20230138469A1

公开(公告)日：2023-05-04

申请号：US17801980

申请日：2021-02-04

Applicant: ASML NETHERLANDS B.V.

Inventor： Carlo LANCIA ,  Anjan Prasad Gantapara ,  Dirk-Jan KERNKAMP ,  Seyed Iman MOSSAVAT ,  Alexander YPMA

IPC: G05B13/04

Abstract: A method of tuning a prediction model relating to at least one particular configuration of a manufacturing device. The method includes obtaining a function including at least a first function of first prediction model parameters associated with the at least one particular configuration, and a second function of the first prediction model parameters and second prediction model parameters associated with configurations of the manufacturing device and/or related devices other than the at least one particular configuration. Values of the first prediction model parameters are obtained based on an optimization of the function, and a prediction model is tuned according to these values of the first prediction model parameters to obtain a tuned prediction mode.

公开(公告)号：US20230134837A1

公开(公告)日：2023-05-04

申请号：US18090873

申请日：2022-12-29

Applicant: ASML NETHERLANDS B.V.

Inventor： Johannes Onvlee ,  Antonius Franciscus Johannes De Groot ,  Wim Symens ,  David Ferdinand Vles

IPC: G03F7/20

Abstract: A substrate support for supporting a substrate. The substrate support includes a main body, a clamping device and a dither device. The main body includes a support surface for supporting the substrate. The clamping device is arranged to provide the clamping force to clamp the substrate on the support surface. The dither device is configured to dither the clamping force. The dither device may be configured to dither the clamping force while the substrate is being loaded onto the support surface.

公开(公告)号：US20230121922A1

公开(公告)日：2023-04-20

申请号：US17792335

申请日：2020-12-18

Applicant: ASML NETHERLANDS B.V.

Inventor： Gijs KRAMER

IPC: G03F7/20 ,  H01L21/683 ,  H01L21/687

Abstract: A suction clamp for clamping an object. The suction clamp includes a base structure including a base and a connection area, and a first pad for receiving the object. The suction clamp further includes a resilient member connecting the first pad to the connection area of the base structure such that the first pad is moveable relative to the base between a receiving position for receiving the object and a clamping position for clamping the object, wherein the resilient member is adapted to bias the first pad to the receiving position. The suction clamp further includes a suction opening arranged in the base and adapted to be connected to a suction device for providing a suction force for clamping the object on the first pad.

公开(公告)号：US20230112447A1

公开(公告)日：2023-04-13

申请号：US17910752

申请日：2021-03-09

Applicant: ASML Netherlands B.V.

Inventor： Weiming REN ,  Yongxin WANG

IPC: H01J37/244 ,  G01N23/2251 ,  G01N23/203 ,  G01N23/2206 ,  H01J37/10 ,  H01J37/147

Abstract: Systems and methods of observing a sample using an electron beam apparatus are disclosed. The electron beam apparatus comprises an electron source configured to generate a primary electron beam along a primary optical axis, and a first electron detector having a first detection layer substantially parallel to the primary optical axis and configured to detect a first portion of a plurality of signal electrons generated from a probe spot on a sample. The method may comprise generating a plurality of signal electrons and detecting the signal electrons using the first electron detector substantially parallel to the primary optical axis of the primary electron beam. A method of configuring an electrostatic element or a magnetic element to detect backscattered electrons may include disposing an electron detector on an inner surface of the electrostatic or magnetic element and depositing a conducting layer on the inner surface of the electron detector.

公开(公告)号：US11621142B2

公开(公告)日：2023-04-04

申请号：US16992058

申请日：2020-08-12

Applicant: ASML Netherlands B.V.

Inventor： Marcel Koenraad Marie Baggen ,  Peter Paul Hempenius ,  Maarten Frans Janus Kremers ,  Robertus Jacobus Theodorus Van Kempen ,  Sven Antoin Johan Hol ,  Henricus Martinus Johannes Van De Groes ,  Johannes Hubertus Antonius Van De Rijdt ,  Niels Johannes Maria Bosch ,  Maarten Hartger Kimman

IPC: H01J37/20 ,  H01J37/28 ,  H01L21/66

Abstract: An electron beam apparatus is provided. The apparatus comprises an e-beam source configured to generate an electron beam, a first part configured to support a substrate, the first part comprising an object table for supporting the substrate, the first part further comprising a short stroke actuator system for actuating the object table relative to the e-beam source, the short stroke actuator system comprising a short stroke forcer. The apparatus further comprises a second part configured to movably support the first part and a long stroke actuator system configured to actuate movement of the first part with respect to the second part, the long stroke actuator system comprising a long stroke forcer, wherein the short stroke forcer and/or the long stroke forcer is configured to be switched off while the electron beam is projected onto the substrate.

公开(公告)号：US11614690B2

公开(公告)日：2023-03-28

申请号：US16478489

申请日：2018-01-24

Applicant: ASML NETHERLANDS B.V.

Inventor： Mu Feng ,  Mir Farrokh Shayegan Salek ,  Dianwen Zhu ,  Leiwu Zheng ,  Rafael C. Howell ,  Jen-Shiang Wang

IPC: G05B19/418 ,  G03F7/20

Abstract: Methods of constructing a process model for simulating a characteristic of a product of lithography from patterns produced under different processing conditions. The methods use a deviation between the variation of the simulated characteristic and the variation of the measured characteristic to adjust a parameter of the process model.

公开(公告)号：US11614416B2

公开(公告)日：2023-03-28

申请号：US16655140

申请日：2019-10-16

Applicant: ASML Netherlands B.V.

Inventor： Xuerang Hu ,  Xinan Luo ,  Qingpo Xi ,  Xuedong Liu ,  Weiming Ren

IPC: G01N23/225 ,  G01N21/95 ,  H01J37/244 ,  H01J37/32

Abstract: An improved charged particle beam inspection apparatus, and more particularly, a particle beam inspection apparatus including an improved alignment mechanism is disclosed. An improved charged particle beam inspection apparatus may include a second electron detection device to generate one or more images of one or more beam spots of the plurality of secondary electron beams during the alignment mode. The beam spot image may be used to determine the alignment characteristics of one or more of the plurality of secondary electron beams and adjust a configuration of a secondary electron projection system.