公开(公告)号：US20200248303A1

公开(公告)日：2020-08-06

申请号：US16853689

申请日：2020-04-20

Applicant: Applied Materials, Inc.

Inventor： Rui Cheng ,  Abhijit Basu Mallick ,  Pramit Manna

IPC: C23C16/24 ,  H01L21/02 ,  H01L21/762 ,  C23C16/56 ,  C23C16/34 ,  C23C16/40 ,  C23C16/04

Abstract: Methods for gapfill of high aspect ratio features are described. A first film is deposited on the bottom and upper sidewalls of a feature. The first film is etched from the sidewalls of the feature and the first film in the bottom of the feature is treated to form a second film. The deposition, etch and treat processes are repeated to fill the feature.

公开(公告)号：US10580642B2

公开(公告)日：2020-03-03

申请号：US15945117

申请日：2018-04-04

Applicant: Applied Materials, Inc.

Inventor： Abhijit Basu Mallick ,  Pramit Manna ,  Shishi Jiang

IPC: H01L21/02 ,  H01L21/285 ,  C23C16/04 ,  C23C16/513 ,  C23C16/30

Abstract: Methods for seam-less gap fill comprising forming a flowable film by PECVD, treating the flowable film to form an Si—X film where X=C, O or N and curing the flowable film or Si—X film to solidify the film. The flowable film can be formed using a higher order silane and plasma. A UV cure, or other cure, can be used to solidify the flowable film or the Si—X film.

公开(公告)号：US20200051920A1

公开(公告)日：2020-02-13

申请号：US16536603

申请日：2019-08-09

Applicant: Applied Materials, Inc.

Inventor： Yong Wu ,  Srinivas Gandikota ,  Abhijit Basu Mallick ,  Srinivas D. Nemani

IPC: H01L23/532 ,  H01L21/285 ,  H01L21/768 ,  H01L21/3205 ,  C23C16/455 ,  C23C16/26

Abstract: A graphene barrier layer is disclosed. Some embodiments relate to a graphene barrier layer capable of preventing diffusion from a fill layer into a substrate surface and/or vice versa. Some embodiments relate to a graphene barrier layer that prevents diffusion of fluorine from a tungsten layer into the underlying substrate. Additional embodiments relate to electronic devices which contain a graphene barrier layer.

公开(公告)号：US20200043932A1

公开(公告)日：2020-02-06

申请号：US16527915

申请日：2019-07-31

Applicant: Applied Materials, Inc.

Inventor： Tejinder Singh ,  Takehito Koshizawa ,  Abhijit Basu Mallick ,  Pramit Manna ,  Nancy Fung ,  Eswaranand Venkatasubramanian ,  Ho-yung David Hwang ,  Samuel E. Gottheim

IPC: H01L27/108

Abstract: Apparatuses and methods to provide a patterned substrate are described. A plurality of patterned and spaced first lines and carbon material lines and formed on the substrate surface by selectively depositing and etching films extending in a first direction and films extending in a second direction that crosses the first direction to pattern the underlying structures.

公开(公告)号：US20190393030A1

公开(公告)日：2019-12-26

申请号：US16445659

申请日：2019-06-19

Applicant: Applied Materials, Inc.

Inventor： Shishi Jiang ,  Eswaranand Venkatasubramanian ,  Pramit Manna ,  Abhijit Basu Mallick

IPC: H01L21/02 ,  C23C16/56 ,  C23C16/50 ,  C23C16/46

Abstract: Methods are described for forming flowable carbon layers on a semiconductor substrate. A local excitation (such as a plasma in PECVD) may be applied as described herein to a carbon-containing precursor to form a flowable carbon film on a substrate. A remote excitation method has also been found to produce flowable carbon films by exciting a stable precursor to produce a radical precursor which is then combined with an unexcited carbon-containing precursor in the substrate processing region. An optional post deposition plasma exposure may also cure or solidify the flowable film after deposition. Methods for forming air gaps using the flowable films described herein are also described.

公开(公告)号：US20190385849A1

公开(公告)日：2019-12-19

申请号：US16522226

申请日：2019-07-25

Applicant: Applied Materials, Inc.

Inventor： David Thompson ,  Benjamin Schmiege ,  Jeffrey W. Anthis ,  Abhijit Basu Mallick ,  Susmit Singha Roy ,  Ziqing Duan ,  Yihong Chen ,  Kelvin Chan ,  Srinivas Gandikota

IPC: H01L21/033 ,  C23F1/00 ,  H01L21/768 ,  H01L21/3213 ,  H01L21/321

Abstract: Processing methods comprising selectively orthogonally growing a first material through a mask to provide an expanded first material are described. The mask can be removed leaving the expanded first material extending orthogonally from the surface of the first material. Further processing can create a self-aligned via.

公开(公告)号：US20190333810A1

公开(公告)日：2019-10-31

申请号：US16505699

申请日：2019-07-08

Applicant: Applied Materials, Inc.

Inventor： Yihong Chen ,  Ziqing Duan ,  Abhijit Basu Mallick ,  Kelvin Chan

IPC: H01L21/768 ,  H01L27/11582 ,  H01L27/11556 ,  H01L21/02 ,  H01L23/528 ,  H01L21/3213 ,  H01L21/285 ,  H01L23/532 ,  H01L21/311

Abstract: Methods of wordline separation in semiconductor devices (e.g., 3D-NAND) are described. A metal film is deposited in the wordlines and on the surface of a stack of spaced oxide layers. The metal film is removed by high temperature oxidation and etching of the oxide or low temperature atomic layer etching by oxidizing the surface and etching the oxide in a monolayer fashion. After removal of the metal overburden, the wordlines are filled with the metal film.

公开(公告)号：US10460933B2

公开(公告)日：2019-10-29

申请号：US15936751

申请日：2018-03-27

Applicant: Applied Materials, Inc.

Inventor： Pramit Manna ,  Shishi Jiang ,  Rui Cheng ,  Abhijit Basu Mallick

IPC: H01L21/00 ,  H01L21/02 ,  H01L21/762 ,  H01L29/06

Abstract: Methods for gapfilling semiconductor device features, such as high aspect ratio trenches, with amorphous silicon film are provided. First, a substrate having features formed in a first surface thereof is positioned in a processing chamber. A conformal deposition process is then performed to deposit a conformal silicon liner layer on the sidewalls of the features and the exposed first surface of the substrate between the features. A flowable deposition process is then performed to deposit a flowable silicon layer over the conformal silicon liner layer. A curing process is then performed to increase silicon density of the flowable silicon layer. Methods described herein generally improve overall etch selectivity by the conformal silicon deposition and the flowable silicon deposition two-step process to realize seam-free gapfilling between features with high quality amorphous silicon film.

公开(公告)号：US10410864B2

公开(公告)日：2019-09-10

申请号：US15988830

申请日：2018-05-24

Applicant: Applied Materials, Inc.

Inventor： Thomas Jongwan Kwon ,  Rui Cheng ,  Abhijit Basu Mallick ,  Er-Xuan Ping ,  Jaesoo Ahn

IPC: H01L21/033 ,  H01L21/3213 ,  H01L21/02 ,  H01L21/308 ,  H01L21/311 ,  H01L27/11582 ,  H01L49/02

Abstract: Implementations of the present disclosure relate to improved hardmask materials and methods for patterning and etching of substrates. A plurality of hardmasks may be utilized in combination with patterning and etching processes to enable advanced device architectures. In one implementation, a first hardmask and a second hardmask disposed on a substrate having various material layers disposed thereon. The second hardmask may be utilized to pattern the first hardmask during a first etching process. A third hardmask may be deposited over the first and second hardmasks and a second etching process may be utilized to form channels in the material layers.

公开(公告)号：US20190252188A1

公开(公告)日：2019-08-15

申请号：US16393375

申请日：2019-04-24

Applicant: Applied Materials, Inc.

Inventor： Ziqing Duan ,  Abhijit Basu Mallick

IPC: H01L21/033 ,  H01L21/768 ,  H01L21/3105 ,  H01L21/321 ,  H01L21/311

CPC classification number: H01L21/0337 ,  H01L21/31053 ,  H01L21/31116 ,  H01L21/32105 ,  H01L21/768 ,  H01L21/76805 ,  H01L21/76883 ,  H01L21/76897

Abstract: Processing methods comprising selectively replacing a first pillar material with a second pillar material in a self-aligned process are described. The first pillar material may be grown orthogonally to the substrate surface and replaced with a second pillar material to leave a substantially similar shape and alignment as the first pillar material.