公开(公告)号：US20170180900A1

公开(公告)日：2017-06-22

申请号：US15452058

申请日：2017-03-07

Applicant: Infineon Technologies AG

Inventor： Alfons Dehe ,  Stefan Barzen

IPC: H04R31/00 ,  B81B3/00 ,  B81C1/00

CPC classification number: H04R31/003 ,  B81B3/0021 ,  B81B3/0086 ,  B81B2201/0221 ,  B81B2201/0257 ,  B81B2203/0127 ,  B81B2203/04 ,  B81C1/00158 ,  B81C2201/013 ,  H04R1/08 ,  H04R19/005 ,  H04R31/006 ,  H04R2201/003

Abstract: A MEMS device includes a backplate electrode and a membrane disposed spaced apart from the backplate electrode. The membrane includes a displaceable portion and a fixed portion. The backplate electrode and the membrane are arranged such that an overlapping area of the fixed portion of the membrane with the backplate electrode is less than maximum overlapping.

公开(公告)号：US09679856B2

公开(公告)日：2017-06-13

申请号：US14201260

申请日：2014-03-07

Applicant: Infineon Technologies AG

Inventor： Christoph Glacer ,  Alfons Dehe ,  John Brueckner

IPC: G01R31/26 ,  H01L23/00 ,  G01N3/08 ,  B81C99/00 ,  G01N3/02

CPC classification number: H01L22/12 ,  B81C99/004 ,  G01N3/02 ,  G01N3/08 ,  G01N2203/0017 ,  G01N2203/0286 ,  G01N2203/0298 ,  H01L21/0217 ,  H01L21/32055 ,  H01L22/32 ,  H01L23/564 ,  H01L2924/0002 ,  H01L2924/00

Abstract: According to an embodiment, a micro-fabricated test structure includes a structure mechanically coupled between two rigid anchors and disposed above a substrate. The structure is released from the substrate and includes a test layer mechanically coupled between the two rigid anchors. The test layer includes a first region having a first cross-sectional area and a constricted region having a second cross-sectional area smaller than the first cross-sectional area. The structure also includes a first tensile stressed layer disposed on a surface of the test layer adjacent the first region.

公开(公告)号：US09674627B2

公开(公告)日：2017-06-06

申请号：US15099758

申请日：2016-04-15

Applicant: Infineon Technologies AG

Inventor： Shu-Ting Hsu ,  Alfons Dehe

IPC: H04R3/00 ,  H04R31/00 ,  H04R1/02 ,  H04R19/00 ,  H04R19/01 ,  H04R9/04

CPC classification number: H04R31/006 ,  H04R1/02 ,  H04R9/048 ,  H04R19/005 ,  H04R19/013 ,  H04R2201/003 ,  H04R2201/029

Abstract: A sound transducer includes a substrate with a cavity with extending from a first surface of the substrate, a body at least partially covering the cavity and being connected to the substrate by at least one resilient hinge, a first set of comb fingers mounted to the substrate, and a second set of comb fingers mounted to the body. The first set of comb fingers and the second set of comb fingers are interdigitated and configured to create an electrostatic force driving the body in a direction perpendicular to the first surface of the substrate. The body and the at least one resilient hinge are configured for a resonant or a near-resonant excitation by the electrostatic force.

公开(公告)号：US20170142525A1

公开(公告)日：2017-05-18

申请号：US14941220

申请日：2015-11-13

Applicant: Infineon Technologies AG

Inventor： Christoph Glacer ,  Alfons Dehe

IPC: H04R19/04 ,  H04R7/12 ,  B81C1/00 ,  H04R31/00 ,  B81B3/00 ,  H04R3/00 ,  H04R19/00

CPC classification number: H04R19/04 ,  B81B3/0008 ,  B81B3/0021 ,  B81B2201/0257 ,  B81B2203/0127 ,  B81B2203/04 ,  B81C1/00158 ,  B81C2201/013 ,  H04R3/00 ,  H04R7/122 ,  H04R19/005 ,  H04R31/00 ,  H04R31/003 ,  H04R2207/00

Abstract: According to an embodiment, a method of operating a microelectromechanical systems (MEMS) transducer that has a membrane includes transducing between out-of-plane deflection of the membrane and voltage on a first pair of electrostatic drive electrodes using the first pair of electrostatic drive electrodes. The first pair of electrostatic drive electrodes is formed on the membrane extending in an out-of-plane direction and form a variable capacitance between the first pair of electrostatic drive electrodes.

公开(公告)号：US09591408B2

公开(公告)日：2017-03-07

申请号：US14553718

申请日：2014-11-25

Applicant: Infineon Technologies AG

Inventor： Alfons Dehe ,  Martin Wurzer

IPC: H04R19/04 ,  H04R1/22 ,  H04R7/26 ,  B81B3/00 ,  H04R19/00

CPC classification number: H04R19/04 ,  B81B3/0078 ,  B81B2201/0257 ,  B81B2203/0127 ,  H04R1/222 ,  H04R7/26 ,  H04R19/005 ,  H04R2201/003

Abstract: A MEMS structure and a method for operation a MEMS structure are disclosed. In accordance with an embodiment of the present invention, a MEMS structure comprises a substrate, a backplate, and a membrane comprising a first region and a second region, wherein the first region is configured to sense a signal and the second region is configured to adjust a threshold frequency from a first value to a second value, and wherein the backplate and the membrane are mechanically connected to the substrate.

Abstract translation: 公开了MEMS结构和操作MEMS结构的方法。 根据本发明的实施例，MEMS结构包括衬底，背板和包括第一区域和第二区域的膜，其中第一区域被配置为感测信号，并且第二区域被配置为调整 从第一值到第二值的阈值频率，并且其中所述背板和所述膜机械连接到所述衬底。

公开(公告)号：US20170052083A1

公开(公告)日：2017-02-23

申请号：US15350787

申请日：2016-11-14

Applicant: Infineon Technologies AG

Inventor： Andreas Wiesbauer ,  Alfons Dehe

IPC: G01L9/00 ,  B81B3/00 ,  G01L9/08

CPC classification number: G01L9/0073 ,  B81B3/0021 ,  B81B2201/0264 ,  G01L9/0042 ,  G01L9/0052 ,  G01L9/0072 ,  G01L9/0082 ,  G01L9/08 ,  G01L9/085 ,  H04R1/08 ,  H04R2201/003

Abstract: According to various embodiments, a dynamic pressure sensor includes a substrate, a reference volume formed in the substrate, a deflectable membrane sealing the reference volume, a deflection sensing element coupled to the membrane and configured to measure a deflection of the membrane, and a ventilation hole configured to equalize an absolute pressure inside the reference volume with an absolute ambient pressure outside the reference volume.

Abstract translation: 根据各种实施例，动态压力传感器包括衬底，形成在衬底中的参考体积，密封参考体积的可偏转膜，耦合到膜并被配置成测量膜偏转的偏转感测元件，以及通气 孔被配置为使参考体积内的绝对压力与参考体积外的绝对环境压力相等。

公开(公告)号：US09516428B2

公开(公告)日：2016-12-06

申请号：US13830111

申请日：2013-03-14

Applicant: Infineon Technologies AG

Inventor： Alfons Dehe ,  Guenther Ruhl

IPC: H04R23/00 ,  H04R31/00 ,  B81C1/00 ,  B81B3/00 ,  H04R19/00 ,  H04R7/04

CPC classification number: H04R23/00 ,  B81B3/0018 ,  B81C1/00158 ,  H04R7/04 ,  H04R19/005 ,  H04R31/00 ,  H04R31/006 ,  H04R2307/023

Abstract: A MEMS acoustic transducer includes a substrate having a cavity therethrough, and a conductive back plate unit including a plurality of conductive perforated back plate portions which extend over the substrate cavity. A dielectric spacer arranged on the back plate unit between adjacent conductive perforated back plate portions, and one or more graphene membranes are supported by the dielectric spacer and extend over the conductive perforated back plate portions.

Abstract translation: MEMS声换能器包括具有穿过其中的腔的衬底，以及导电背板单元，其包括在衬底空腔上延伸的多个导电多孔背板部分。 布置在相邻的导电多孔背板部分之间的背板单元上的电介质隔离物和一个或多个石墨烯膜由介电间隔物支撑并在导电多孔背板部分上延伸。

公开(公告)号：US09458009B2

公开(公告)日：2016-10-04

申请号：US14798112

申请日：2015-07-13

Applicant: Infineon Technologies AG

Inventor： Alfons Dehe ,  Carsten Ahrens ,  Stefan Barzen ,  Wolfgang Friza

IPC: B81C1/00 ,  B81B3/00

CPC classification number: B81B3/0072 ,  B81B3/001 ,  B81B3/0027 ,  B81B2201/0257 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81C1/00182 ,  B81C1/00404 ,  B81C1/00984 ,  B81C2201/017 ,  B81C2201/115

Abstract: In accordance with an embodiment of the present invention, a method of forming a semiconductor device includes forming a sacrificial layer over a first surface of a workpiece having the first surface and an opposite second surface. A membrane is formed over the sacrificial layer. A through hole is etched through the workpiece from the second surface to expose a surface of the sacrificial layer. At least a portion of the sacrificial layer is removed from the second surface to form a cavity under the membrane. The cavity is aligned with the membrane.

公开(公告)号：US09448126B2

公开(公告)日：2016-09-20

申请号：US14198609

申请日：2014-03-06

Applicant: Infineon Technologies AG

Inventor： Alfons Dehe ,  Christoph Glacer

IPC: G01L1/14 ,  G01L9/00 ,  G01R29/12

CPC classification number: G01L1/14 ,  G01L9/0042 ,  G01L9/0073 ,  G01R29/12

Abstract: A transducer structure including a carrier with an opening and a suspended structure mounted on the carrier which extends at least partially over the opening in the carrier is disclosed. The transducer structure may further include configuring the suspended structure to provide an electrostatic field between the suspended structure and the carrier by changing a distance between the suspended structure and the carrier. Alternatively, the suspended structure may be configured to change the distance between the suspended structure and the carrier in response to an electrostatic force provided between the suspended structure and the carrier.

Abstract translation: 一种传感器结构，其包括具有开口的载体和安装在载体上的悬挂结构，其至少部分地延伸在载体中的开口上。 换能器结构还可以包括配置悬挂结构，以通过改变悬挂结构和载体之间的距离来在悬挂结构和载体之间提供静电场。 或者，悬挂结构可以被配置为响应悬挂结构和载体之间提供的静电力而改变悬挂结构和载体之间的距离。

公开(公告)号：US09438979B2

公开(公告)日：2016-09-06

申请号：US14198634

申请日：2014-03-06

Applicant: Infineon Technologies AG

Inventor： Alfons Dehe

IPC: H04R25/00 ,  H04R1/08 ,  H04R17/02 ,  H04R19/00 ,  H04R19/04 ,  H04R31/00

CPC classification number: H04R1/08 ,  H04R17/02 ,  H04R19/005 ,  H04R19/04 ,  H04R31/00 ,  H04R2201/003 ,  H04R2207/00 ,  H04R2499/11

Abstract: A sensor structure, including: a first diaphragm structure, an electrode element, and a second diaphragm structure arranged on an opposite side of the electrode element from the first diaphragm structure is disclosed. The sensor structure may also include a chamber formed by the first and second diaphragm structures, where the pressure in the chamber is lower than the pressure outside of the chamber. A method for forming the sensor structure is likewise disclosed.

Abstract translation: 公开了一种传感器结构，包括：第一隔膜结构，电极元件和布置在电极元件与第一隔膜结构相对侧的第二隔膜结构。 传感器结构还可以包括由第一和第二隔膜结构形成的室，其中室中的压力低于室外的压力。 同样公开了一种用于形成传感器结构的方法。