公开(公告)号：US07343061B2

公开(公告)日：2008-03-11

申请号：US11274873

申请日：2005-11-15

Applicant: Stephen R. Forrest ,  Kuen-Ting Shiu ,  Shashank S. Agashe

Inventor： Stephen R. Forrest ,  Kuen-Ting Shiu ,  Shashank S. Agashe

IPC: G02B6/12 ,  G02B6/43 ,  H01S5/026

CPC classification number: G02B6/12004 ,  G02B6/1228 ,  G02B2006/12083 ,  G02B2006/12133 ,  H01L31/02327 ,  H01S5/026 ,  H01S5/0264 ,  H01S5/1014 ,  H01S5/1032 ,  H01S5/1064 ,  H01S5/3213 ,  H01S5/50

Abstract: An asymmetric twin waveguide (ATG) structure with an integrated amplifier and detector fabricated in a single active waveguide layer is disclosed. The structure comprises an active waveguide layer formed on a passive waveguide layer. The active and passive waveguides have different effective indices of refraction such that a first mode of light is confined primarily to the active waveguide and a second mode of light is confined primarily to the passive waveguide in the area where the waveguides overlap.

Abstract translation: 公开了在单个有源波导层中制造的具有集成放大器和检测器的不对称双波导（ATG）结构。 该结构包括形成在无源波导层上的有源波导层。 有源和无源波导具有不同的有效折射率，使得第一模式主要被限制在有源波导上，并且第二光模式主要被限制在波导重叠的区域中的无源波导。

公开(公告)号：US07333689B2

公开(公告)日：2008-02-19

申请号：US11241003

申请日：2005-09-30

Applicant: Vinod M. Menon ,  Milind R. Gokhale ,  Stephen R. Forrest ,  Yu Huang ,  Fengnian Xia

Inventor： Vinod M. Menon ,  Milind R. Gokhale ,  Stephen R. Forrest ,  Yu Huang ,  Fengnian Xia

IPC: G02B6/26 ,  G02B6/10

CPC classification number: H01S5/1082 ,  B82Y20/00 ,  G02B6/1228 ,  H01S5/065 ,  H01S5/1014 ,  H01S5/1032 ,  H01S5/162 ,  H01S5/3213 ,  H01S5/34306

Abstract: An asymmetric twin waveguide (ATG) structure with quantum-well intermixing in the taper region of the active waveguide is disclosed. The structure comprises a first waveguide, a second waveguide, and a taper formed in the second waveguide. The taper has an intermixed area formed therein comprising a plurality of quantum wells intermixed with a plurality of barriers. The quantum wells and barriers may be intermixed using plasma-enhanced intermixing such as, for example, Argon plasma enhanced intermixing. Quantum-well intermixing reduces absorption loss normally encountered in the movement of light between waveguides.

Abstract translation: 公开了在有源波导的锥形区域中具有量子阱混合的不对称双波导（ATG）结构。 该结构包括第一波导，第二波导和形成在第二波导中的锥形。 该锥形件具有形成在其中的混合区域，其包括与多个屏障混合的多个量子阱。 量子阱和屏障可以使用等离子体增强混合（例如，氩等离子体增强混合）混合。 量子阱混合减少了在波导之间光的移动中通常遇到的吸收损耗。

公开(公告)号：US07327910B2

公开(公告)日：2008-02-05

申请号：US10983366

申请日：2004-11-08

Applicant: Stephen R. Forrest ,  Milind Gokhale ,  Pavel Studenkov

Inventor： Stephen R. Forrest ,  Milind Gokhale ,  Pavel Studenkov

IPC: G02B6/12 ,  H01S5/00 ,  H04B10/04 ,  H04B10/12

CPC classification number: G02B6/12004 ,  B82Y20/00 ,  G02B6/12021 ,  G02B6/2813 ,  G02B2006/12121 ,  G02B2006/12178 ,  G02B2006/12195 ,  H01S5/1014 ,  H01S5/1032 ,  H01S5/1064 ,  H01S5/3403 ,  H01S5/34306 ,  H01S5/50

Abstract: An asymmetric twin waveguide (ATG) structure is disclosed that significantly reduces the negative effects of inter-modal interference in symmetric twin-waveguide structures and which can be effectively used to implement a variety of optical devices. The ATG structure of the invention can be monolithically fabricated on a single epitaxial structure without the necessity of epitaxial re-growth. To achieve the ATG structure of the invention, the effective index of the passive waveguide in the ATG is varied from that of a symmetric twin waveguide such that one mode of the even and odd modes of propagation is primarily confined to the passive waveguide and the other to the active waveguide. The different effective indices of the two coupled waveguides result in the even and odd modes becoming highly asymmetric. As a result, the mode with the larger confinement factor in the active waveguide experiences higher gain and becomes dominant. In a further embodiment, the active waveguide is tapered to reduce coupling losses of the optical energy between the passive waveguide and the active waveguide. In a further embodiment, a grating region is incorporated atop the passive waveguide to select certain frequencies for transmission of light through the passive waveguide.

Abstract translation: 公开了一种非对称双波导（ATG）结构，显着降低了对称双波导结构中模态间干扰的负面影响，可有效地用于实现各种光学器件。 本发明的ATG结构可以在单个外延结构上单片地制造，而不需要外延再生长。 为了实现本发明的ATG结构，ATG中的无源波导的有效指数与对称双波导的有效指数不同，使得偶数和奇数传播模式的一个模式主要限于无源波导和另一个 到有源波导。 两个耦合波导的不同有效指数导致均匀和奇数模式变得高度不对称。 结果，在有源波导中具有较大约束因子的模式经历较高的增益并成为主导的。 在另一个实施例中，有源波导是锥形的，以减少无源波导和有源波导之间的光能的耦合损耗。 在另一个实施例中，将光栅区域并入无源波导顶部，以选择某些频率以透射通过无源波导的光。

公开(公告)号：US07261954B2

公开(公告)日：2007-08-28

申请号：US11353338

申请日：2006-02-13

Applicant: Mark E. Thompson ,  Xiaofan Ren ,  Vadim Adamovich ,  Steven R Cordero ,  Brian Wendell D'Andrade ,  Bert Alleyne ,  Stephen R. Forrest

Inventor： Mark E. Thompson ,  Xiaofan Ren ,  Vadim Adamovich ,  Steven R Cordero ,  Brian Wendell D'Andrade ,  Bert Alleyne ,  Stephen R. Forrest

IPC: H01L51/54 ,  H05B33/12

CPC classification number: H01L51/5096 ,  H01L51/0034 ,  H01L51/0035 ,  H01L51/0037 ,  H01L51/005 ,  H01L51/0059 ,  H01L51/0062 ,  H01L51/007 ,  H01L51/0077 ,  H01L51/0079 ,  H01L51/0081 ,  H01L51/0082 ,  H01L51/0084 ,  H01L51/0085 ,  H01L51/5016 ,  H01L51/5048 ,  Y10S428/917 ,  Y10T428/24942

Abstract: Light emitting devices having blocking layers comprising one or more metal complexes are provided. The blocking layers may serve to block electrons, holes, and/or excitons. Preferably, the devices further comprise a separate emissive layer in which charge and/or excitons are confined. Metal complexes suitable for blocking layers can be selected by comparison of HOMO and LUMO energy levels of materials comprising adjacent layers in devices of the present invention.

Abstract translation: 提供具有包含一种或多种金属络合物的阻挡层的发光器件。 阻挡层可用于阻挡电子，空穴和/或激子。 优选地，所述器件还包括单独的发射层，其中电荷和/或激子被限制在其中。 可以通过比较本发明的装置中包含相邻层的材料的HOMO和LUMO能级来选择适合于阻挡层的金属络合物。

公开(公告)号：US07230269B2

公开(公告)日：2007-06-12

申请号：US11150143

申请日：2005-06-13

Applicant: Barry P. Rand ,  Stephen R. Forrest ,  Mark E. Thompson

Inventor： Barry P. Rand ,  Stephen R. Forrest ,  Mark E. Thompson

IPC: H01L29/08 ,  H01L21/00 ,  H01L51/40

CPC classification number: B82Y10/00 ,  H01L51/0046 ,  H01L51/0062 ,  H01L51/0078 ,  H01L51/0086 ,  H01L51/4246 ,  H01L2251/308 ,  Y02E10/549

Abstract: A photosensitive cell includes an anode and a cathode; a donor-type organic material and an acceptor-type organic material forming a donor-acceptor junction connected between the anode and the cathode; and an exciton blocking layer connected between the acceptor-type organic material of the donor-acceptor junction and the cathode, the blocking layer consisting essentially of a material that has a hole mobility of at least 10−7 cm2/V-sec or higher, where a HOMO of the blocking layer is higher than or equal to a HOMO of the acceptor-type material.

Abstract translation: 光敏电池包括阳极和阴极; 供体型有机材料和形成连接在阳极和阴极之间的供体 - 受体结的受主型有机材料; 以及连接在供体 - 受体结的受主型有机材料和阴极之间的激子阻挡层，该阻挡层基本上由具有至少10 -7 cm的空穴迁移率的材料组成 2秒/ V秒以上，其中阻挡层的HOMO高于或等于受主型材料的HOMO。

公开(公告)号：US07205585B2

公开(公告)日：2007-04-17

申请号：US11350008

申请日：2006-02-09

Applicant: Stephen R. Forrest ,  Vladimir Bulovic ,  Peter Peumans

Inventor： Stephen R. Forrest ,  Vladimir Bulovic ,  Peter Peumans

IPC: H01L51/42

CPC classification number: H01L51/4246 ,  B82Y10/00 ,  H01L27/302 ,  H01L27/305 ,  H01L27/307 ,  H01L51/0037 ,  H01L51/005 ,  H01L51/0053 ,  H01L51/0071 ,  H01L51/0072 ,  H01L51/0078 ,  H01L51/4273 ,  H01L2251/308 ,  Y02E10/549 ,  Y10S428/913 ,  Y10T428/24942

Abstract: An organic photosensitive optoelectronic device having a plurality of cells disposed between a first electrode and a second electrode. Each cell includes a photoconductive organic hole transport layer adjacent to a photoconductive organic electron transport layer. A metal or metal substitute is disposed between each of the cells. At least one exciton blocking layer is disposed between the first electrode and the second electrode.

Abstract translation: 一种有机光敏光电器件，其具有设置在第一电极和第二电极之间的多个单元。 每个电池包括与光电导有机电子传输层相邻的光导有机空穴传输层。 金属或金属替代物设置在每个电池之间。 至少一个激子阻挡层设置在第一电极和第二电极之间。

公开(公告)号：US07026187B2

公开(公告)日：2006-04-11

申请号：US10819658

申请日：2004-04-06

Applicant: Max Shtein ,  Stephen R. Forrest

Inventor： Max Shtein ,  Stephen R. Forrest

IPC: H01L51/40

CPC classification number: H01L51/0545 ,  B05D1/60 ,  C23C14/12 ,  C23C14/228 ,  H01L51/0002 ,  H01L51/0052 ,  Y02E10/549 ,  Y02P70/521

Abstract: A method of employing organic vapor phase deposition to fabricate a polycrystalline organic thin film is described. By employing organic vapor phase deposition at moderate deposition chamber pressures and substrate temperatures, a polycrystalline organic thin film results having significantly larger purity and grain size than what is achievable by vacuum thermal evaporation. These polycrystalline organic thin films may be employed in a variety of applications, including, for example, organic light emitting devices, photovoltaic cells, photodetectors, lasers, and thin film transistors.

Abstract translation: 描述了使用有机气相沉积来制造多晶有机薄膜的方法。 通过在中等沉积室压力和衬底温度下采用有机气相沉积，多晶有机薄膜具有比通过真空热蒸发可实现的显着更大的纯度和晶粒尺寸。 这些多晶有机薄膜可以用于各种应用中，包括例如有机发光器件，光伏电池，光电检测器，激光器和薄膜晶体管。

公开(公告)号：US07009338B2

公开(公告)日：2006-03-07

申请号：US10144419

申请日：2002-05-13

Applicant: Brian D'Andrade ,  Mark E. Thompson ,  Stephen R. Forrest

Inventor： Brian D'Andrade ,  Mark E. Thompson ,  Stephen R. Forrest

IPC: H05B33/14 ,  H05B33/00

CPC classification number: C09K11/06 ,  C09K2211/1029 ,  C09K2211/1092 ,  C09K2211/185 ,  H01L51/5016 ,  H01L51/5036 ,  H01L51/5088 ,  H01L51/5096 ,  Y10S428/917 ,  Y10T428/24942

Abstract: The present invention relates to efficient organic light emitting devices (OLEDs) doped with multiple light-emitting dopants, at least one dopant comprising a phosphorescent emitter, in a thin film emissive layer or layers. The present invention is directed to an efficient phosphorescent organic light emitting device utilizing a plurality of emissive dopants in an emissive region, wherein at least one of the dopants is a phosphorescent material. Thus, the present invention provides an organic light emitting device comprising an emissive region, wherein the emissive region comprises a host material, and a plurality of emissive dopants, wherein the emissive region is comprised of a plurality of bands and each emissive dopant is doped into a separate band within the emissive region, and wherein at least one of the emissive dopants emits light by phosphorescence.

Abstract translation: 本发明涉及掺杂有多个发光掺杂剂的有效的有机发光器件（OLED），至少一种包含磷光发射体的掺杂剂在薄膜发射层或多层中。 本发明涉及在发射区域中利用多个发射掺杂剂的有效磷光有机发光器件，其中至少一种掺杂剂是磷光材料。 因此，本发明提供了一种包括发射区域的有机发光器件，其中发射区域包括主体材料和多个发射掺杂剂，其中发射区域由多个带组成，并且每个发光掺杂剂被掺杂到 发射区域内的单独的带，并且其中至少一个发射掺杂剂通过磷光发光。

公开(公告)号：US06939624B2

公开(公告)日：2005-09-06

申请号：US09978455

申请日：2001-10-16

Applicant: Sergey Lamansky ,  Mark E. Thompson ,  Vadim Adamovich ,  Peter I. Djurovich ,  Chihaya Adachi ,  Marc A. Baldo ,  Stephen R. Forrest ,  Raymond Kwong

Inventor： Sergey Lamansky ,  Mark E. Thompson ,  Vadim Adamovich ,  Peter I. Djurovich ,  Chihaya Adachi ,  Marc A. Baldo ,  Stephen R. Forrest ,  Raymond Kwong

IPC: C07F15/00 ,  C09K11/06 ,  H01L51/00 ,  H01L51/30 ,  H01L51/50 ,  H05B33/14

CPC classification number: C09K11/06 ,  C07F15/0033 ,  C07F15/0086 ,  C09K2211/1007 ,  C09K2211/1011 ,  C09K2211/1014 ,  C09K2211/1029 ,  C09K2211/1044 ,  C09K2211/1088 ,  C09K2211/1092 ,  C09K2211/185 ,  H01L51/0084 ,  H01L51/0085 ,  H01L51/0087 ,  H01L51/5016 ,  H05B33/14 ,  Y10S428/917

Abstract: Emissive phosphorescent organometallic compounds are described that produce improved electroluminescence, particularly in the blue region of the visible spectrum. Organic light emitting devices employing such emissive phosphorescent organometallic compounds are also described. Also described is an organic light emitting layer including a host material having a lowest triplet excited state having a decay rate of less than about 1 per second; a guest material dispersed in the host material, the guest material having a lowest triplet excited state having a radiative decay rate of greater than about 1×105 or about 1×106 per second and wherein the energy level of the lowest triplet excited state of the host material is lower than the energy level of the lowest triplet excited state of the guest material.

公开(公告)号：US06900588B2

公开(公告)日：2005-05-31

申请号：US10452659

申请日：2003-05-30

Applicant: Chihaya Adachi ,  Marc A. Baldo ,  Stephen R. Forrest

Inventor： Chihaya Adachi ,  Marc A. Baldo ,  Stephen R. Forrest

IPC: H01L51/00 ,  H01L51/30 ,  H01L51/50 ,  H01J1/62

CPC classification number: H01L51/5088 ,  H01L51/005 ,  H01L51/0059 ,  H01L51/0084 ,  H01L51/5016 ,  H01L51/5048 ,  Y10T428/24942

Abstract: The present invention is directed to simplified OLED structures comprising an anode layer, a hole injecting layer (HIL) in direct contact with the anode layer, an emissive organic electron transporting layer (ETL) in direct contact with the hole injecting layer, and a cathode layer in direct contact with the emissive organic electron transporting layer. The hole injecting material used in the hole injecting layer is characterized, in particular, as being an organic material having an ionization potential that is not more than about 0.7 eV greater than the ionization potential of the material used for the anode layer. The emissive organic electron transporting layer comprises an organic electron transporting material and an organic hole-trapping emissive material, for example, an organic phosphorescent material that produces emission from a triplet excited state of an organic molecule.

Abstract translation: 本发明涉及简单的OLED结构，其包括阳极层，与阳极层直接接触的空穴注入层（HIL），与空穴注入层直接接触的发射有机电子传输层（ETL）和阴极 层与发射有机电子传输层直接接触。 在空穴注入层中使用的空穴注入材料的特征在于，特征在于，作为具有比用于阳极层的材料的电离电位大不超过约0.7eV的电离电位的有机材料。 发射有机电子传输层包括有机电子传输材料和有机空穴俘获发射材料，例如产生有机分子的三重激发态的发射的有机磷光材料。