公开(公告)号：US08737536B2

公开(公告)日：2014-05-27

申请号：US12579935

申请日：2009-10-15

Applicant: Muralidhar Karthik ,  George A. Vlantis

Inventor： Muralidhar Karthik ,  George A. Vlantis

IPC: H04B3/46

CPC classification number: H04L25/022 ,  H04L25/0244 ,  H04L25/03821 ,  H04L27/2601

Abstract: In an embodiment, a multi-carrier signal (e.g., an OFDM signal) is received over a channel. Indicators of interference and the channel response at a carrier frequency of the signal are determined, and compared. If the indicator of interference has a particular relationship to the indicator of the channel response, then a data value transmitted at the carrier frequency is recovered from a data value received at the carrier frequency according to a particular data-recovery algorithm. Because the particular data-recovery algorithm may be faster than a conventional data-recovery algorithm, recovering one or more data values with the particular algorithm may increase the speed at which data is recovered from a multicarrier signal as compared to using a conventional data-recovery algorithm.

Abstract translation: 在一个实施例中，通过信道接收多载波信号（例如，OFDM信号）。 确定信号载波频率处的干扰指标和信道响应，并进行比较。 如果干扰指示符与信道响应的指示符具有特定的关系，则根据特定的数据恢复算法从载波频率接收的数据值恢复在载波频率处发送的数据值。 由于特定的数据恢复算法可能比传统的数据恢复算法更快，与使用常规数据恢复相比，用特定算法恢复一个或多个数据值可能会增加数据从多载波信号中恢复的速度 算法。

公开(公告)号：US08729702B1

公开(公告)日：2014-05-20

申请号：US13682162

申请日：2012-11-20

Applicant: STMicroelectronics, Inc. ,  International Business Machines Corporation

Inventor： Chengyu Niu ,  Andrew Simon ,  Keith Kwong Hon Wong ,  Yun-Yu Wang

IPC: H01L23/40 ,  H01L21/82 ,  C23C14/00

CPC classification number: H01L23/481 ,  C23C14/046 ,  C23C14/34 ,  C23C14/3464 ,  H01L21/2855 ,  H01L21/76849 ,  H01L21/76858 ,  H01L21/76865 ,  H01L21/76867 ,  H01L21/76871 ,  H01L21/76873 ,  H01L2221/1089 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A trench is opened in a dielectric layer. The trench is then lined with a barrier layer and a metal seed layer. The metal seed layer is non-uniformly doped and exhibits a vertical doping gradient varying as a function of trench depth. The lined trench is then filled with a metal fill material. A dielectric cap layer is then deposited over the metal filled trench. Dopant from the non-uniformly doped metal seed layer is then migrated to an interface between the metal filled trench and the dielectric cap layer to form a self-aligned metal cap.

Abstract translation: 沟槽在电介质层中打开。 然后将沟槽衬有阻挡层和金属种子层。 金属种子层是非均匀掺杂的，并且表现出随沟槽深度变化的垂直掺杂梯度。 然后将衬里的沟槽填充有金属填充材料。 然后在金属填充的沟槽上沉积电介质盖层。 然后将来自非均匀掺杂的金属种子层的掺杂剂迁移到金属填充沟槽和电介质盖层之间的界面，以形成自对准金属帽。

公开(公告)号：US20140119268A1

公开(公告)日：2014-05-01

申请号：US14148047

申请日：2014-01-06

Applicant: STMicroelectronics, Inc.

Inventor： Liwen Chu ,  George A. Vlantis

IPC: H04W74/04 ,  H04W72/04 ,  H04W72/00

CPC classification number: H04W72/0446 ,  H04L12/43 ,  H04W72/005 ,  H04W74/04

Abstract: Methods and apparatus for implementing a robust unicast/broadcast/multicast protocol are provided. In one aspect, a method of avoiding collision of intra-basic service set unicast, broadcast or multicast transmissions notifies stations in the basic service set of a reserved transmit opportunity for a unicast, broadcast or multicast transmission. Transmissions from at least one station in the basic service set are deferred until after the reserved unicast, broadcast or multicast transmit opportunity.

Abstract translation: 提供了用于实现鲁棒的单播/广播/多播协议的方法和装置。 在一个方面，避免基本内部服务设置单播，广播或多播传输的冲突的方法通知用于单播，广播或多播传输的预留发送机会的基本服务集中的站。 基本服务集中的至少一个站的传输延迟到保留的单播，广播或多播发送机会之后。

公开(公告)号：US20140106529A1

公开(公告)日：2014-04-17

申请号：US14051174

申请日：2013-10-10

Applicant: STMICROELECTRONICS (CROLLES 2) SAS ,  STMICROELECTRONICS, INC.

Inventor： Pierre Morin ,  Remi Beneyton

IPC: H01L29/66

CPC classification number: H01L29/665 ,  H01L21/28518 ,  H01L29/41791 ,  H01L29/66795 ,  H01L29/7845

Abstract: A thermal annealing flow process includes the steps of: depositing a metal or metal alloy on a silicon semiconductor structure, performing a first annealing of a rapid thermal anneal (RTA) type to produce a metal rich phase in a portion of the silicon semiconductor structure, removing unreacted metal or metal alloy and performing a second annealing as a millisecond annealing at a temperature that is below a melt temperature of the silicon material present in the silicon semiconductor structure.

Abstract translation: 热退火流程包括以下步骤：在硅半导体结构上沉积金属或金属合金，执行快速热退火（RTA）型的第一退火以在硅半导体结构的一部分中产生富金相， 去除未反应的金属或金属合金，并在低于硅半导体结构中存在的硅材料的熔融温度的温度下进行第二退火作为毫秒退火。

公开(公告)号：US20140105098A1

公开(公告)日：2014-04-17

申请号：US14050575

申请日：2013-10-10

Applicant: STMICROELECTRONICS, INC.

Inventor： Liwen Chu ,  George A. Vlantis

IPC: H04B7/155

CPC classification number: H04B7/15528 ,  H04W28/065

Abstract: A compressed header format is used for messages transmitted in a wireless network. The compressed header includes a first address field and a frame control field including at least one bit specifying whether the first address is for an access point of the wireless communications network. The frame control field may further include at least one additional bit identifying whether the frame is being relayed by a relay node positioned between the access point and a wireless station. The frame control field may further include at least one further bit identifying whether AID is used for the first address field.

Abstract translation: 压缩报头格式用于在无线网络中发送的消息。 压缩报头包括第一地址字段和帧控制字段，该字段包括指定第一地址是否用于无线通信网络的接入点的至少一个比特。 帧控制字段还可以包括至少一个附加位，标识帧是否被位于接入点和无线站之间的中继节点中继。 帧控制字段还可以包括至少一个识别是否将AID用于第一地址字段的另一位。

公开(公告)号：US20140099769A1

公开(公告)日：2014-04-10

申请号：US13647986

申请日：2012-10-09

Applicant: STMICROELECTRONICS, INC. ,  INTERNATIONAL BUSINESS MACHINES CORP.

Inventor： Nicolas Loubet ,  Qing Liu ,  Shom Ponoth

IPC: H01L21/762

CPC classification number: H01L21/76283 ,  H01L21/31111 ,  H01L21/76232 ,  H01L21/84

Abstract: Isolation trenches are etched through an active silicon layer overlying a buried oxide on a substrate into the substrate, and through any pad dielectric(s) on the active silicon layer. Lateral epitaxial growth of the active silicon layer forms protrusions into the isolation trenches to a lateral distance of at least about 5 nanometers, and portions of the isolation trenches around the protrusions are filled with dielectric. Raised source/drain regions are formed on portions of the active silicon layer including a dielectric. As a result, misaligned contacts passing around edges of the raised source/drain regions remain spaced apart from sidewalls of the substrate in the isolation trenches.

Abstract translation: 通过将衬底上的掩埋氧化物覆盖在衬底中以及通过有源硅层上的任何焊盘电介质的有源硅层蚀刻隔离沟槽。 有源硅层的横向外延生长在隔离沟槽中形成至少约5纳米的横向距离的突起，并且围绕突起的部分隔离沟槽被电介质填充。 在包括电介质的有源硅层的部分上形成凸起的源极/漏极区。 结果，穿过凸起的源极/漏极区域的边缘的不对准触点保持与隔离沟槽中的衬底的侧壁间隔开。

公开(公告)号：US20140087524A1

公开(公告)日：2014-03-27

申请号：US14119395

申请日：2011-06-09

Applicant: Nicolas Posseme ,  Laurent Grenouillet ,  Yannick Le Tiec ,  Nicolas Loubet ,  Maud Vinet

Inventor： Nicolas Posseme ,  Laurent Grenouillet ,  Yannick Le Tiec ,  Nicolas Loubet ,  Maud Vinet

IPC: H01L29/66

CPC classification number: H01L29/66477 ,  H01L21/2652 ,  H01L21/26586 ,  H01L21/823418 ,  H01L21/84 ,  H01L29/66545 ,  H01L29/66628 ,  H01L29/66772

Abstract: The substrate successively includes a support substrate, an electrically insulating layer, a semiconductor material layer, and a gate pattern. The semiconductor material layer and gate pattern are covered by a covering layer. A first doping impurity is implanted in the semiconductor material layer through the covering layer so as to place the thickness of maximum concentration of the first doping impurity in the first layer. The covering layer is partly eliminated so as to form lateral spacers leaving source/drain electrodes free.

Abstract translation: 基板依次包括支撑基板，电绝缘层，半导体材料层和栅极图案。 半导体材料层和栅极图案被覆盖层覆盖。 第一掺杂杂质通过覆盖层注入到半导体材料层中，以将第一掺杂杂质的最大浓度的厚度置于第一层中。 覆盖层被部分地消除，以形成离开源极/漏电极的横向间隔物。

公开(公告)号：US08681164B2

公开(公告)日：2014-03-25

申请号：US13655152

申请日：2012-10-18

Applicant: STMicroelectronics, Inc.

Inventor： Jefferson Eugene Owen ,  Raul Zegers Diaz ,  Osvaldo Colavin

IPC: G06F13/18 ,  G06F15/167

CPC classification number: G06T1/60 ,  G06F13/1605 ,  G06F13/18 ,  G06F15/167 ,  G09G5/001 ,  G09G5/363 ,  G09G2340/02 ,  G09G2360/18 ,  H04N19/423 ,  H04N19/427 ,  H04N19/61 ,  H04N21/443 ,  H04N21/4435

Abstract: An electronic system, an integrated circuit and a method for display are disclosed. The electronic system contains a first device, a memory and a video/audio compression/decompression device such as a decoder/encoder. The electronic system is configured to allow the first device and the video/audio compression/decompression device to share the memory. The electronic system may be included in a computer in which case the memory is a main memory. Memory access is accomplished by one or more memory interfaces, direct coupling of the memory to a bus, or direct coupling of the first device and decoder/encoder to a bus. An arbiter selectively provides access for the first device and/or the decoder/encoder to the memory based on priority. The arbiter may be monolithically integrated into a memory interface. The decoder may be a video decoder configured to comply with the MPEG-2 standard. The memory may store predicted images obtained from a preceding image.

Abstract translation: 公开了电子系统，集成电路和显示方法。 电子系统包含第一设备，存储器以及诸如解码器/编码器的视频/音频压缩/解压缩设备。 电子系统被配置为允许第一设备和视频/音频压缩/解压缩设备共享存储器。 电子系统可以包括在计算机中，在这种情况下，存储器是主存储器。 存储器访问由一个或多个存储器接口实现，存储器直接耦合到总线，或者将第一设备和解码器/编码器直接耦合到总线。 仲裁器基于优先级选择性地提供对存储器的第一设备和/或解码器/编码器的访问。 仲裁器可以单片地集成到存储器接口中。 解码器可以是被配置为符合MPEG-2标准的视频解码器。 存储器可以存储从前一图像获得的预测图像。

公开(公告)号：US08680631B2

公开(公告)日：2014-03-25

申请号：US13862208

申请日：2013-04-12

Applicant: STMicroelectronics, Inc.

Inventor： Venkatesh Mohanakrishnaswamy ,  Loi N. Nguyen

IPC: H01L29/84

CPC classification number: B81B3/0021 ,  B81C1/00166 ,  B81C1/00626

Abstract: A method that includes forming an opening between at least one first electrode and a second electrode by forming a recess in a first electrode layer, the recess having sidewalls that correspond to a surface of the at least one first electrode, forming a first sacrificial layer on the sidewalls of the recess, the first sacrificial layer having a first width that corresponds to a second width of the opening, forming a second electrode layer in the recess that corresponds to the second electrode, and removing the first sacrificial layer to form the opening between the second electrode and the at least one first electrode.

Abstract translation: 一种方法，其包括通过在第一电极层中形成凹槽而在至少一个第一电极和第二电极之间形成开口，所述凹部具有对应于所述至少一个第一电极的表面的侧壁，形成第一牺牲层 所述凹槽的侧壁，所述第一牺牲层具有对应于所述开口的第二宽度的第一宽度，在所述凹部中形成对应于所述第二电极的第二电极层，以及移除所述第一牺牲层以形成 所述第二电极和所述至少一个第一电极。

公开(公告)号：US20140078949A1

公开(公告)日：2014-03-20

申请号：US14025456

申请日：2013-09-12

Applicant: STMicroelectronics, Inc.

Inventor： Liwen Chu ,  George A. Vlantis

IPC: H04W52/02

CPC classification number: H04W52/0209 ,  H04W52/0219 ,  Y02D70/142

Abstract: An additional cyclic redundancy check (CRC) is inserted in IEEE 802.11 beacon or data frames prior to the end of the frame, at a location following information sufficient for the receiving station to determine whether the frame is from an overlapping basic service set or intended for a different station and to extract other necessary or useful information such as a time of the next full beacon. Upon detecting the CRC, the receiving STA can terminate reception of the frame early to conserve power, and then enter a low power operational mode to further conserve power.

Abstract translation: 在足以使接收站确定帧是否来自重叠的基本业务集或旨在为重叠的基本业务集合的信息之后的位置处，在帧的结尾之前的IEEE 802.11信标或数据帧中插入附加的循环冗余校验（CRC） 一个不同的站，并提取其他必要或有用的信息，如下一个完整信标的时间。 在检测到CRC时，接收STA可以提前终止帧的接收以节省功率，然后进入低功率操作模式以进一步节省功率。