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    Light-insensitive resistor for current-limiting of field emission displays
    231.
    发明授权
    Light-insensitive resistor for current-limiting of field emission displays 失效
    用于场发射显示器限流的光敏电阻器

    公开(公告)号：US06507329B2

    公开(公告)日：2003-01-14

    申请号：US09774812

    申请日：2001-01-30

    Applicant: David A. Cathey, Jr. ,  Kevin W. Tjaden ,  Behnam Moradi ,  John K. Lee ,  James J. Alwan

    Inventor： David A. Cathey, Jr. ,  Kevin W. Tjaden ,  Behnam Moradi ,  John K. Lee ,  James J. Alwan

    IPC: G09G322

    CPC classification number: H01J1/3042 ,  H01J1/304 ,  H01J31/127 ,  H01J2201/319 ,  H01J2329/00

    Abstract: A semiconductor device for use in field emission displays includes a substrate formed from a semiconductor material, glass, soda lime, or plastic. A first layer of a conductive material is formed on the substrate. A second layer of microcrystalline silicon is formed on the first layer. This layer has characteristics that do not fluctuate in response to conditions that vary during the operation of the field emission display, particularly the varying light intensity from the emitted electrons or from the ambient. One or more cold-cathode emitters are formed on the second layer.

    Abstract translation: 用于场发射显示器的半导体器件包括由半导体材料，玻璃，钠钙或塑料形成的衬底。 在基板上形成第一导电材料层。 在第一层上形成第二层微晶硅。 该层具有响应于在场发射显示器的操作期间变化的条件，特别是来自发射的电子或来自环境的变化的光强度而不波动的特性。 在第二层上形成一个或多个冷阴极发射体。

    Method and apparatuses for providing uniform electron beams from field emission displays
    232.
    发明申请
    Method and apparatuses for providing uniform electron beams from field emission displays 失效

    公开(公告)号：US20020190663A1

    公开(公告)日：2002-12-19

    申请号：US10219201

    申请日：2002-08-14

    Inventor： Robert T. Rasmussen

    IPC: G09G003/10

    CPC classification number: G09G3/22 ,  G09G2320/0233 ,  H01J29/467 ,  H01J29/481 ,  H01J31/127 ,  H01J2201/319 ,  H01J2329/4695

    Abstract: The invention includes field emitters, field emission displays (FEDs), monitors, computer systems and methods employing the same for providing uniform electron beams from cathodes of FED devices. The apparatuses each include electron beam uniformity circuitry. The electron beam uniformity circuit provides a grid voltage, VGrid, with a DC offset voltage sufficient to induce field emission from a cathode and a periodic signal superimposed on the DC offset voltage for varying the grid voltage at a frequency fast enough to be undetectable by the human eye. The cathodes may be of the micro-tipped or flat variety. The periodic signal may be sinusoidal with peak-to-peak voltage of between about 5 volts and about 50 volts.

    Field emitter cell and array with vertical thin-film-edge emitter
    233.
    发明申请
    Field emitter cell and array with vertical thin-film-edge emitter 失效
    具有垂直薄膜边缘发射极的场发射极单元和阵列

    公开(公告)号：US20020190622A1

    公开(公告)日：2002-12-19

    申请号：US09883458

    申请日：2001-06-13

    Inventor： David S.Y. Hsu ,  Henry F. Gray ,  Joan G. Gray ,  James R. Gray

    IPC: H01J001/304 ,  H01J019/24

    CPC classification number: H01J1/3046 ,  B82Y10/00 ,  B82Y30/00 ,  H01J3/022 ,  H01J9/025 ,  H01J2201/30469 ,  H01J2201/319

    Abstract: A field emitter cell includes a thin film edge emitter normal to a gate layer. The field emitter is a multilayer structure including a low work function material sandwiched between two protective layers. The field emitter may be fabricated from a composite starting structure including a conductive substrate layer, an insulation layer, a standoff layer and a gate layer, with a perforation extending from the gate layer into the substrate layer. The emitter material is conformally deposited by chemical beam deposition along the sidewalls of the perforation. Alternatively, the starting material may be a conductive substrate having a protrusion thereon. The emitter layer, standoff layer, insulation layer, and gate layer are sequentially deposited, and the unwanted portions of each are preferentially removed to provide the desired structure.

    Abstract translation: 场发射极单元包括垂直于栅极层的薄膜边缘发射极。 场致发射体是包含夹在两个保护层之间的低功函数材料的多层结构。 场发射器可以由包括导电衬底层，绝缘层，支座层和栅极层的复合起始结构制成，其中穿孔从栅极层延伸到衬底层中。 发射体材料通过化学束沉积沿着穿孔的侧壁共形沉积。 或者，起始材料可以是其上具有突起的导电基底。 顺序地沉积发射极层，隔离层，绝缘层和栅极层，并且优先除去其中不需要的部分以提供所需的结构。

    Flat display screen with an addressing memory
    234.
    发明申请
    Flat display screen with an addressing memory 失效
    具有寻址存储器的平面显示屏

    公开(公告)号：US20020011797A1

    公开(公告)日：2002-01-31

    申请号：US09858813

    申请日：2001-05-16

    Inventor： Bernard Bancal

    IPC: G09G003/10

    CPC classification number: G09G3/22 ,  H01J3/022 ,  H01J2201/319 ,  H01J2329/00

    Abstract: A cathode-grid plate of a field-effect flat display screen of the type including a first set of row conductors, a second set of column conductors and, for each screen pixel, defined by the intersection of a column and of a line, an element for temporarily storing the luminance control signal of the considered pixel.

    Abstract translation: 场效应平面显示屏的阴极栅格板，其类型包括第一组行导体，第二组列导体，并且对于每个屏幕像素，由一列和一条线的交点定义， 元素，用于临时存储所考虑的像素的亮度控制信号。

    Field emission display with diode-type field emitters
    235.
    发明授权
    Field emission display with diode-type field emitters 有权
    具有二极管型场发射器的场发射显示

    公开(公告)号：US06307323B1

    公开(公告)日：2001-10-23

    申请号：US09474528

    申请日：1999-12-29

    Applicant: Yoon Ho Song ,  Jin Ho Lee ,  Seung Youl Kang ,  Kyoung Ik Cho

    Inventor： Yoon Ho Song ,  Jin Ho Lee ,  Seung Youl Kang ,  Kyoung Ik Cho

    IPC: G05G310

    CPC classification number: B82Y10/00 ,  G09G3/22 ,  H01J31/126 ,  H01J2201/30457 ,  H01J2201/30469 ,  H01J2201/319

    Abstract: A field emission display in which field emission devices are applied to a flat panel display. A field emission display with diode-type field emitters includes an upper plate and a lower plate, the upper plate and the lower plate are vacuum-packaged in parallel. The lower plate includes a plurality of column signal buses and a plurality of row signal buses, film type field emitters, and switching devices. The column signal buses and the row signal buses are made of metallic material. Pixels are defined by the column signal buses and the row signal buses. A film type field emitter and a switching device are formed inside each pixel. The switching device controls the field emitter on the basis of scan signals and data signals. The scan signals and data signals are loaded to the switching devices through the column signal buses and the row signal buses. The switching device includes at least three electrodes for connection with the column signal bus, the row signal bus, and the field emitter.

    Abstract translation: 场发射装置用于平板显示器的场致发射显示器。 具有二极管型场致发射体的场发射显示器包括上板和下板，上板和下板被并联真空包装。 下板包括多个列信号总线和多个行信号总线，薄膜型场发射器和开关装置。 列信号总线和行信号总线由金属材料制成。 像素由列信号总线和行信号总线定义。 在每个像素内部形成有膜型场发射器和开关器件。 开关装置根据扫描信号和数据信号控制场发射器。 扫描信号和数据信号通过列信号总线和行信号总线加载到开关装置。 开关装置包括用于与列信号总线，行信号总线和场发射器连接的至少三个电极。

    Method of forming wire line
    238.
    发明授权
    Method of forming wire line 有权
    形成布线的方法

    公开(公告)号：US06194308B1

    公开(公告)日：2001-02-27

    申请号：US09421165

    申请日：1999-10-19

    Applicant: Everett A. McTeer ,  Russell C. Zahorik ,  Scott G. Meikle

    Inventor： Everett A. McTeer ,  Russell C. Zahorik ,  Scott G. Meikle

    IPC: H01L310232

    CPC classification number: H01L21/76849 ,  H01J1/52 ,  H01J29/896 ,  H01J31/127 ,  H01J2201/30403 ,  H01J2201/319 ,  H01L21/0276 ,  H01L21/32139 ,  H01L21/7685 ,  H01L21/76858 ,  H01L21/76885 ,  H01L23/53223 ,  H01L31/02161 ,  H01L2221/1078 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: Titanium aluminum nitrogen (“Ti—Al—N”) is deposited onto a semiconductor substrate area to serve as an antireflective coating. For wiring line fabrication processes, the Ti—Al—N layer serves as a cap layer which prevents unwanted reflection of photolithography light (i.e., photons) during fabrication. For field emission display devices (FEDs), the Ti—Al—N layer prevents light originating at the display screen anode from penetrating transistor junctions that would hinder device operation. For the wiring line embodiment, an aluminum conductive layer and a titanium-aluminum underlayer are formed beneath the antireflective cap layer. The Ti—Al underlayer reduces the shrinkage which occurs in the aluminum conductive layer during heat treatment.

    Abstract translation: 将钛铝氮（“Ti-Al-N”）沉积到半导体衬底区域上以用作抗反射涂层。 对于布线生产工艺，Ti-Al-N层用作遮盖层，防止在制造过程中光刻光（即光子）的不期望的反射。 对于场致发射显示装置（FED），Ti-Al-N层防止在显示屏阳极处产生的光穿透将阻碍器件工作的晶体管结。 对于布线实施例，在抗反射盖层下方形成铝导电层和钛 - 铝底层。 Ti-Al底层减少了在热处理期间在铝导电层中发生的收缩。

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