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    Dual-layer metal for flat panel display
    2.
    发明授权
    Dual-layer metal for flat panel display 失效
    双层金属用于平板显示

    公开(公告)号：US06448708B1

    公开(公告)日：2002-09-10

    申请号：US09588118

    申请日：2000-05-31

    申请人： Kishore K. Chakravorty ,  Swayambu Ramani ,  Stephanie J. Oberg ,  Johan Knall ,  Duane A. Haven ,  Ronald S. Besser ,  Paul J. Louris ,  Arthur J. Learn ,  Christopher J. Spindt ,  Roger W. Barton

    发明人： Kishore K. Chakravorty ,  Swayambu Ramani ,  Stephanie J. Oberg ,  Johan Knall ,  Duane A. Haven ,  Ronald S. Besser ,  Paul J. Louris ,  Arthur J. Learn ,  Christopher J. Spindt ,  Roger W. Barton

    IPC分类号： H01J102

    CPC分类号： H01J9/025 ,  H01J1/30 ,  H01J9/148 ,  H01J2201/30403 ,  H01J2329/00

    摘要： A flat panel display and a method for forming a flat panel display. In one embodiment, the flat panel display includes a cathodic structure which is formed within an active area on a backplate. The cathodic structure includes a emitter electrode metal composed of strips of aluminum overlain by a layer of cladding material. The use of aluminum and cladding material to form emitter electrode metal gives emitter electrode metal segments which are highly conductive due to the high conductivity of aluminum. By using a suitable cladding material and processing steps, a bond between the aluminum and the cladding material is formed which has good electrical conductivity. In one embodiment, tantalum is used as a cladding material. Tantalum forms a bond with the overlying resistive layer which has good electrical conductivity. Thus, the resulting structure has very high electrical conductivity through the aluminum layer and high conductivity into the resistive layer. Electrode structures that use resistor material, chromium-containing material, nickel and vanadium alloy, and gold are also disclosed.

    摘要翻译： 平板显示器和平板显示器的形成方法。 在一个实施例中，平板显示器包括形成在背板上的有效区域内的阴极结构。 阴极结构包括由覆盖材料层覆盖的铝条构成的发射极电极金属。 使用铝和包层材料形成发射极电极金属，由于铝的高导电性而导致高导电性的发射极电极金属片段。 通过使用合适的覆层材料和加工步骤，形成铝和包层材料之间的结合，其具有良好的导电性。 在一个实施例中，钽用作包层材料。 钽与具有良好导电性的上覆电阻层形成键。 因此，所得结构通过铝层具有非常高的导电性，并且在电阻层中具有高导电性。 还公开了使用电阻材料，含铬材料，镍和钒合金以及金的电极结构。

    Fabrication of electron-emitting device having large control openings centered on focus openings
    3.
    发明授权
    Fabrication of electron-emitting device having large control openings centered on focus openings 失效
    具有以焦点开口为中心的大的控制开口的电子发射器件的制造

    公开(公告)号：US06338662B1

    公开(公告)日：2002-01-15

    申请号：US09626599

    申请日：2000-07-27

    申请人： Christopher J. Spindt ,  Stephanie J. Oberg ,  Duane A. Haven ,  Roger W. Barton ,  Arthur J. Learn ,  Victoria A. Bascom

    发明人： Christopher J. Spindt ,  Stephanie J. Oberg ,  Duane A. Haven ,  Roger W. Barton ,  Arthur J. Learn ,  Victoria A. Bascom

    IPC分类号： H01J900

    CPC分类号： H01J9/025 ,  H01J3/022 ,  H01J2329/00

    摘要： Fabrication of an electron-emitting device entails providing an electron-emitting structure in which multiple sets of electron-emissive elements (24) overlying an emitter electrode (12) are arranged in a line extending generally in a specified direction. Each of a group of control electrodes (28) in the electron-emitting structure contain (a) a main control portion (30) penetrated by a control opening (34) that laterally circumscribes one of the sets of electron-emissive elements and (b) a gate portion (32) that extends across the control opening and has gate openings (36) through which the electron-emissive elements are exposed. Actinic material (38P) is provided over the control electrodes and processed to form a base focusing structure (38) penetrated by multiple focus openings (40) such that each focus opening is centered on a corresponding one of the control openings in the specified direction.

    摘要翻译： 电子发射器件的制造需要提供一种电子发射结构，其中覆盖发射极（12）的多组电子发射元件（24）以一般沿指定方向延伸的直线布置。 电子发射结构中的一组控制电极（28）中的每一个包含（a）横向地限制一组电子发射元件的控制开口（34）穿透的主控制部分（30）和（b ）栅极部分（32），其延伸穿过所述控制开口并具有栅极开口（36），所述电子发射元件通过所述栅极开口暴露。 将光化材料（38P）设置在控制电极上并被处理以形成由多个聚焦开口（40）穿透的基部聚焦结构（38），使得每个聚焦开口以指定方向上的对应的一个控制开口为中心。

    Electron-emitting device having large control openings in specified, typically centered, relationship to focus openings
    4.
    发明授权
    Electron-emitting device having large control openings in specified, typically centered, relationship to focus openings 失效
    电子发射器件具有大的控制开口，具有特定的，通常与聚焦开口对中的关系

    公开(公告)号：US06201343B1

    公开(公告)日：2001-03-13

    申请号：US08919634

    申请日：1997-08-28

    申请人： Christopher J. Spindt ,  Stephanie J. Oberg ,  Duane A. Haven ,  Roger W. Barton ,  Arthur J. Learn ,  Victoria A. Bascom

    发明人： Christopher J. Spindt ,  Stephanie J. Oberg ,  Duane A. Haven ,  Roger W. Barton ,  Arthur J. Learn ,  Victoria A. Bascom

    IPC分类号： H01J102

    CPC分类号： H01J9/025 ,  H01J3/022 ,  H01J2329/00

    摘要： An electron-emitting device contains an emitter electrode (12), a group of sets of electron-emitting elements (24), a group of control electrodes (28), and a focusing system (37) for focusing electrons emitted by the electron-emissive elements. The sets of electron-emissive elements are arranged generally in a line extending in a specified direction. Each control electrode has a main portion (30) and a gate portion (32). the electron-emissive elements are exposed through gate openings (36) in the gate portion. The main portion of each control electrode crosses over the emitter electrode and has a large control opening (34) which laterally circumscribes one of the sets of electron-emissive elements. The focusing system has a group of focus openings (40) located respectively above the control openings. Each control opening is largely centered on, or/and is no more than 50% as large as, the corresponding focus opening in the specified direction.

    摘要翻译： 电子发射器件包含发射电极（12），一组电子发射元件（24），一组控制电极（28）和用于聚焦电子发射元件发射的电子的聚焦系统（37） 发光元件。 电子发射元件组通常以沿指定方向延伸的直线布置。 每个控制电极具有主要部分（30）和栅极部分（32）。 电子发射元件通过栅极部分中的栅极开口（36）暴露。 每个控制电极的主要部分与发射电极交叉，并且具有横向地限制一组电子发射元件的大的控制开口（34）。 聚焦系统具有分别位于控制开口上方的一组聚焦开口（40）。 每个控制开口主要集中在与指定方向相对应的焦点开口的或/或不大于其相应聚焦开口的50％。

    Integrated metallization for displays
    7.
    发明授权
    Integrated metallization for displays 失效
    显示器集成金属化

    公开(公告)号：US6154188A

    公开(公告)日：2000-11-28

    申请号：US846386

    申请日：1997-04-30

    申请人： Arthur J. Learn ,  Duane A. Haven

    发明人： Arthur J. Learn ,  Duane A. Haven

    IPC分类号： H01J5/32 ,  H01J29/90 ,  H01J31/12 ,  G09G3/22 ,  H01J1/62 ,  H01J15/00

    CPC分类号： H01J31/127 ,  H01J29/90 ,  H01J2329/90

    摘要： A flat-panel display including a substrate, a viewing screen, a non-conductive ring, many row conductive electrodes, conductive pads and column buses. The ring vacuum-seals a cavity between the substrate and the viewing screen. Coupled to one surface of the substrate, the row conductive electrodes have a conductivity that is higher than the conductive pads. Each pad is connected to one row electrode, and each pad extends through the ring to allow electrical coupling to its corresponding row electrode from outside the cavity while vacuum is maintained inside the cavity. The row electrodes are substantially parallel to each other, and are substantially perpendicular to the column buses. The conductive electrodes are protected from exposure to the ring. In one embodiment, the ring is a frit seal, the row conductive electrodes are made of aluminum, and the column buses and the pads are made of chromium.

    摘要翻译： 一种平板显示器，包括基板，观察屏，非导电环，许多行导电电极，导电焊盘和列总线。 环形真空密封衬底和观察屏幕之间的空腔。 耦合到衬底的一个表面，行导电电极具有高于导电焊盘的电导率。 每个焊盘连接到一个行电极，并且每个焊盘延伸穿过环，以允许从腔外部电耦合到其对应的行电极，同时真空保持在腔内。 行电极基本上彼此平行，并且基本上垂直于列总线。 保护导电电极免受环境的影响。 在一个实施例中，环是玻璃料密封，行导电电极由铝制成，并且列总线和焊盘由铬制成。

    Use of sacrificial masking layer and backside exposure in forming openings that typically receive light-emissive material
    8.
    发明授权
    Use of sacrificial masking layer and backside exposure in forming openings that typically receive light-emissive material 失效
    在形成通常接收发光材料的开口中使用牺牲掩模层和背面曝光

    公开(公告)号：US6046539A

    公开(公告)日：2000-04-04

    申请号：US846522

    申请日：1997-04-29

    申请人： Duane A. Haven ,  Arthur J. Learn ,  John D. Porter

    发明人： Duane A. Haven ,  Arthur J. Learn ,  John D. Porter

    IPC分类号： G03F7/20 ,  H01J9/227 ,  H01J29/08 ,  H01J29/32 ,  H01J29/87 ,  H01J31/12 ,  H01J29/10 ,  H01J1/62 ,  H01J31/00 ,  H01J63/04

    CPC分类号： H01J29/085 ,  H01J31/127

    摘要： Openings are created in a structure by a process in which a plate is furnished with a sacrificial patterned masking layer divided into multiple laterally separated mask portions. A primary layer of actinic material is provided over the masking layer and in space between the mask portions. Material of the primary layer not shadowed by a mask formed with the mask portions is backside exposed to actinic radiation. Material of the primary layer not exposed to the radiation is removed. Segments of the masking layer not covered by exposed material of the primary layer are then removed. Consequently, openings extend through the primary layer where the segments of the masking layer have been removed. The process is typically employed in forming an optical device such as a flat-panel cathode-ray tube display in which the openings in the primary layer receive light-emissive material.

    摘要翻译： 通过其中板配备有划分成多个横向分离的掩模部分的牺牲图案化掩模层的工艺在结构中产生开口。 在掩模层之上和掩模部分之间的空间中提供光化材料的主层。 未被掩模部分形成的掩模遮蔽的主层的材料背面暴露于光化辐射。 不暴露于辐射的主层的材料被去除。 然后去除未被主层的暴露材料覆盖的掩蔽层的部分。 因此，开口延伸穿过主层，其中掩模层的段被去除。 该方法通常用于形成诸如平板阴极射线管显示器的光学装置，其中初级层中的开口接收发光材料。

    Chemical vapor deposition wafer boat
    9.
    发明授权
    Chemical vapor deposition wafer boat 失效

    公开(公告)号：US4694778A

    公开(公告)日：1987-09-22

    申请号：US828625

    申请日：1986-02-10

    申请人： Arthur J. Learn ,  Dale R. DuBois

    发明人： Arthur J. Learn ,  Dale R. DuBois

    IPC分类号： C23C16/44 ,  C23C16/455 ,  B05C13/02

    CPC分类号： C23C16/45559 ,  C23C16/455 ,  C23C16/45591

    摘要： A chemical vapor deposition wafer boat for supporting a plurality of wafers in an evenly spaced, upright orientation perpendicular to the axis of the boat comprises a cylinder having closed ends and comprised of mutually engaging upper and lower hemicylinders. The upper hemicylinder has diffusion zones with gas flow passageways therein in the ends and zones within from 0 to 75 and within from 0 to 15 degrees from a vertical plane through the cylinder axis. The remainder of the hemicylinder wall and the ends are baffle areas without gas flow passageways. The ends and sidewall of the lower hemicylinder comprise gas diffusion zones. The gas flow passageways comprise from 0.5 to 80 percent of the surface area of the respective gas diffusion zones.