Macromolecular antioxidants and polymeric macromolecular antioxidants
    251.
    发明申请
    Macromolecular antioxidants and polymeric macromolecular antioxidants 审中-公开
    大分子抗氧化剂和聚合物大分子抗氧化剂

    公开(公告)号:US20100084607A1

    公开(公告)日:2010-04-08

    申请号:US12583012

    申请日:2009-08-12

    CPC classification number: C08G73/026 C07C235/38 C08G61/10 C12P13/001 C12P13/02

    Abstract: Disclosed are macromolecular antioxidants represented by a structural formula selected from I-VI: and polymeric macromolecular antioxidants comprises at least one repeating unit represented by a structural formula selected from VIIa, VIIb, VIIIa, VIIIb or a combination thereof: possessing superior oxidative resistance and higher thermal stability than commercially available antioxidants, and synthesis and applications of these macromolecular antioxidants and polymeric macromolecular antioxidants.

    Abstract translation: 公开了由选自I-VI的结构式表示的大分子抗氧化剂:和聚合物大分子抗氧化剂包含至少一种由选自VIIa,VIIb,VIIIa,VIIIb或其组合的结构式表示的重复单元:具有优异的耐氧化性和更高的 热稳定性比市售的抗氧化剂,以及这些大分子抗氧化剂和聚合物大分子抗氧化剂的合成和应用。

    Wide band gap semiconductor device including junction field effect transistor
    252.
    发明申请
    Wide band gap semiconductor device including junction field effect transistor 有权
    宽带隙半导体器件包括结场效应晶体管

    公开(公告)号:US20100025693A1

    公开(公告)日:2010-02-04

    申请号:US12458968

    申请日:2009-07-28

    Abstract: A wide band gap semiconductor device has a transistor cell region, a diode forming region, an electric field relaxation region located between the transistor cell region and the diode forming region, and an outer peripheral region surrounding the transistor cell region and the diode forming region. In the transistor cell region, a junction field effect transistor is disposed. In the diode forming region, a diode is disposed. In the electric field relaxation region, an isolating part is provided. The isolating part includes a trench dividing the transistor cell region and the diode forming region, a first conductivity-type layer disposed on an inner wall of the trench, and a second conductivity-type layer disposed on a surface of the first conductivity-type layer so as to fill the trench. The first conductivity-type layer and the second conductivity-type layer provide a PN junction.

    Abstract translation: 宽带隙半导体器件具有晶体管单元区域,二极管形成区域,位于晶体管单元区域和二极管形成区域之间的电场弛豫区域以及围绕晶体管单元区域和二极管形成区域的外围区域。 在晶体管单元区域中,设置结型场效应晶体管。 在二极管形成区域中,设置二极管。 在电场弛豫区域中,设置隔离部。 隔离部分包括分隔晶体管单元区域和二极管形成区域的沟槽,设置在沟槽的内壁上的第一导电类型层和设置在第一导电类型层的表面上的第二导电类型层 以填补沟槽。 第一导电型层和第二导电型层提供PN结。

    Method and system for alert throttling in media quality monitoring
    256.
    发明授权
    Method and system for alert throttling in media quality monitoring 有权
    在媒体质量监控中进行警报调节的方法和系统

    公开(公告)号:US07606149B2

    公开(公告)日:2009-10-20

    申请号:US11379312

    申请日:2006-04-19

    Abstract: A method for alert throttling in media quality monitoring, includes monitoring a plurality of active communication sessions. Each active communication session is between at least two endpoints. The method also includes detecting at least one quality-impacted communication session out of the plurality of active communication sessions. The method also includes generating a first alert for each detected quality-impacted communication session out of the plurality of active communication sessions until a first throttling number of quality-impacted communication sessions is detected out of the plurality of active communication sessions. Upon detecting the first throttling number of quality-impacted communication sessions, the method includes generating a second alert for each group of additional second number of quality-impacted communication sessions detected out of the plurality of active communication sessions.

    Abstract translation: 一种用于在媒体质量监测中进行警报节流的方法,包括监视多个主动通信会话。 每个活动通信会话在至少两个端点之间。 该方法还包括从多个主动通信会话中检测至少一个受质量影响的通信会话。 该方法还包括为多个活动通信会话中的每个检测到的受质量影响的通信会话生成第一警报,直到从多个主动通信会话中检测到受质量影响的通信会话的第一节流数量。 在检测到受质量影响的通信会话的第一节流数量时,该方法包括为从多个主动通信会话中检测到的对质量影响的通信会话的每组额外的第二数量生成第二警报。

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