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公开(公告)号：US20180143877A1
公开(公告)日：2018-05-24
申请号：US15876211
申请日：2018-01-22
Applicant: Silicon Motion Inc.
Inventor： Tsung-Chieh Yang , Hong-Jung Hsu , Jian-Dong Du
CPC classification number: G06F11/1068 , G11C11/5621 , G11C11/5628 , G11C16/0483 , G11C16/10 , G11C16/26 , G11C16/32 , G11C16/3418 , G11C29/52
Abstract: A method used in a flash memory module having a plurality of storage blocks is disclosed. Each storage block can be used as a first block or a second block wherein a cell of the first block is arranged for storing data of 1 bit and a cell of the second block is arranged for storing data of at least 2 bits. The method includes: classifying data to be programmed into a plurality of groups of data; executing error code encoding to generate a corresponding parity check code to store the groups of data and the corresponding parity check code to at least one block of first blocks; and after completing storing the groups of data, performing an internal copy operation upon the groups of data and the corresponding parity check code from the at least one block of the first blocks to at least one second block.
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公开(公告)号：US20180143876A1
公开(公告)日：2018-05-24
申请号：US15874895
申请日：2018-01-19
Applicant: Silicon Motion Inc.
Inventor： Tsung-Chieh Yang , Hong-Jung Hsu , Jian-Dong Du
CPC classification number: G06F11/1068 , G11C11/5621 , G11C16/10 , G11C16/26 , G11C29/52
Abstract: A method used for a flash memory module having a plurality of storage blocks each can be used as a first block or a second block includes: classifying data into a plurality of groups of data; respectively executing error code encoding to generate a first corresponding parity check code to store the groups of data and the first corresponding parity check code into the flash memory module as first blocks; reading out the groups of data from the first blocks; executing error correction and de-randomize operation upon read out data to generate de-randomized data; executing randomize operation upon the de-randomized data according to a set of seeds to generate randomized data; performing error code encoding upon the randomized data to generate a second corresponding parity check code; and storing the randomized data and the second corresponding parity check code into the flash memory module as the second block.
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公开(公告)号：US20180133476A1
公开(公告)日：2018-05-17
申请号：US15870430
申请日：2018-01-12
Applicant: KUANG-CHAO CHEN , SILICON MOTION, INC.
Inventor： Kuang-Chao CHEN , Kuo-Liang YEH
CPC classification number: A61N1/36036 , A61N1/0541 , H04R25/606 , H04R25/70 , H04R2460/13
Abstract: Disclosed is a hearing auxiliary device for helping a person with hearing impairment to obtain hearing information. The hearing auxiliary device includes a bone conduct transceiver, a receiver and a driver. The bone conduct transceiver converts a sound raw data to a bone conduct signal. The receiver is installed to an inner ear portion of the person with hearing impairment, and the receiver receives the bone conduct signal and converts the bone conduct signal to a sound restoration signal. The driver sends out a physical signal according to the sound restoration signal, in order to let the person with hearing impairment to obtain a hearing signal.
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公开(公告)号：US20180121347A1
公开(公告)日：2018-05-03
申请号：US15859724
申请日：2018-01-01
Applicant: Silicon Motion Inc.
Inventor： Tsung-Chieh Yang , Hong-Jung Hsu
CPC classification number: G06F12/0246 , G06F3/0608 , G06F3/061 , G06F3/0629 , G06F11/1004 , G06F12/0804 , G06F2212/1016 , G06F2212/1032 , G06F2212/7203 , G06F2212/7208 , G11C2211/5641
Abstract: A flash memory storage management method includes: providing a flash memory module including single-level-cell (SLC) blocks and at least one multiple-level-cell block such as MLC block, TLC block, or QLC block; classifying data to be programmed into groups of data; respectively executing SLC programing and RAID-like error code encoding to generate corresponding parity check codes, to program the groups of data and corresponding parity check codes to the SLC blocks; when completing program of the SLC blocks, performing an internal copy to program the at least one multiple-level-cell block by sequentially reading and writing the groups of data and corresponding parity check codes from the SLC blocks to the multiple-level-cell block according to a storage order of the SLC blocks.
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公开(公告)号：US20180101302A1
公开(公告)日：2018-04-12
申请号：US15659203
申请日：2017-07-25
Applicant: Silicon Motion, Inc.
Inventor： Wen-Sheng Lin
CPC classification number: G06F3/0604 , G06F3/064 , G06F12/0246 , G06F12/10 , G06F2212/657 , G06F2212/7201 , G11C16/00
Abstract: A data storage device including a flash memory and a controller is provided. The flash memory has a plurality of TLC blocks, each of which includes a plurality of pages. The controller checks whether any of the TLC blocks was undergoing a write operation and unfinished at the time that the power-off event occurred when the data storage device resumes operation after a power-off event. When a first TLC block was undergoing the write operation and unfinished at the time that the power-off event occurred, the controller further checks whether data stored in a page which was the last one being written in the first TLC block can be successfully read, and continues to write the remaining data into the first TLC block when the data of the page which was the last one being written in the first TLC block can be successfully read.
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Patent Agency Ranking
公开(公告)号：US09870321B2
公开(公告)日：2018-01-16
申请号：US14839138
申请日：2015-08-28
Applicant: Silicon Motion, Inc.
Inventor： Wen-Sheng Lin
IPC: G06F11/00 , G06F12/1009 , G06F3/06 , G06F11/14 , G06F12/02
CPC classification number: G06F12/1009 , G06F3/0619 , G06F3/065 , G06F3/0679 , G06F11/1435 , G06F12/0246 , G06F2212/1032 , G06F2212/7201 , G06F2212/7207
Abstract: A flash memory control technology with high reliability. In a power recovery process, a microcontroller is configured to duplicate a last write page of a run-time write block of a flash memory and thereby generate a duplicated page in the run-time write block. The microcontroller is further configured use the mapping information accessed from the duplicated page in rebuilding a physical-to-logical address mapping table rather than the mapping information accessed from the last write page. The microcontroller is configured to maintain the physical-to-logical address mapping table on a random access memory for the run-time write block and is further configured to use the physical-to-logical address mapping table to update a logical-to-physical address mapping table maintained in the flash memory.
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公开(公告)号：US09858996B2
公开(公告)日：2018-01-02
申请号：US15426070
申请日：2017-02-07
Applicant: Silicon Motion Inc.
Inventor： Tsung-Chieh Yang , Hsiao-Te Chang , Wen-Long Wang
CPC classification number: G11C11/5642 , G06F3/0604 , G06F3/0622 , G06F3/0629 , G06F3/0638 , G06F3/0679 , G11C11/5628 , G11C16/08 , G11C16/26
Abstract: A memory access module for performing memory access management of a storage device including a plurality of storage cells includes: sensing means for performing a plurality of sensing operations respectively corresponding to a plurality of different sensing voltages in order to generate a first digital value and a second digital value of a storage cell; processing means for using the first digital value and the second digital value to obtain soft information of a same bit stored in the storage cell; decoding means for using the soft information to perform soft decoding; and controlling means for accessing the storage device. The controlling means includes: storage means for storing a program code; and processing means for executing a program code to control access to the storage device and manage the plurality of storage cells.
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公开(公告)号：US20170372797A1
公开(公告)日：2017-12-28
申请号：US15598239
申请日：2017-05-17
Applicant: Silicon Motion, Inc.
Inventor： Sheng Yuan Huang
CPC classification number: G11C29/42 , G11C16/10 , G11C16/26 , G11C16/349 , G11C29/44 , G11C2029/1204 , G11C2029/4402
Abstract: A method for screening bad columns in a data storage medium includes steps of: writing predetermined data into at least one sample block; comparing the written data with the predetermined data to calculate numbers of error bits in the plurality of columns; defining an inspection window covering a portion of the columns; summing the numbers of error bits in the portion of columns in the inspection window to obtain a total number of error bits and determining whether the total number of error bits is greater than a number of correctable bits; if yes, determining a start point and a terminal point of a bad column interval in the inspection window, wherein the numbers of error bits in the columns between the start point and the terminal point are greater than a threshold of error bits; and labeling the columns in the bad column interval as bad columns.
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269.发明授权公开(公告)号：US09852068B2
公开(公告)日：2017-12-26
申请号：US14862913
申请日：2015-09-23
Applicant: Silicon Motion, Inc.
Inventor： Wen-Chi Hong
IPC: G06F12/00 , G06F12/02 , G06F12/1009
CPC classification number: G06F12/0292 , G06F12/0215 , G06F12/1009 , G06F2212/65 , G06F2212/70
Abstract: The method for maintaining a storage mapping table is introduced. After a total number of logical blocks, which exceeds a specified number, have been programmed into a storage unit, an access interface is directed to program a corresponding group of a storage mapping table of a DRAM (Dynamic Random Access Memory) into a first block of the storage unit according to a group number of an unsaved group queue. A group mapping table of the DRAM is updated to indicate that the latest data of the group of the storage mapping table is stored in which location in the storage unit. The group number is removed from the unsaved group queue.
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公开(公告)号：US09852032B2
公开(公告)日：2017-12-26
申请号：US15660029
申请日：2017-07-26
Applicant: Silicon Motion, Inc.
Inventor： Kuan-Yu Ke
CPC classification number: G06F11/1469 , G06F3/0619 , G06F3/065 , G06F3/0679 , G06F2201/84
Abstract: A data storage device is provided. The data storage device includes a flash memory and a controller. The flash memory includes a plurality of blocks. Each block includes a plurality of pages. when the data storage device is resumed from a power-off event, the controller selects a first block which was written last before the power-off event among the plurality of blocks and writes data of a plurality of first pages of the first block into a plurality of second pages of the first block.
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