公开(公告)号：US20240421161A1

公开(公告)日：2024-12-19

申请号：US18817672

申请日：2024-08-28

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Jun KOYAMA ,  Hiroyuki MIYAKE

IPC: H01L27/12 ,  G09G3/20 ,  G11C19/28 ,  H01L29/04 ,  H01L29/10 ,  H01L29/24 ,  H01L29/417 ,  H01L29/423 ,  H01L29/45 ,  H01L29/49 ,  H01L29/786 ,  H10K59/121

Abstract: An object of an embodiment of the present invention is to manufacture a semiconductor device with high display quality and high reliability, which includes a pixel portion and a driver circuit portion capable of high-speed operation over one substrate, using transistors having favorable electric characteristics and high reliability as switching elements. Two kinds of transistors, in each of which an oxide semiconductor layer including a crystalline region on one surface side is used as an active layer, are formed in a driver circuit portion and a pixel portion. Electric characteristics of the transistors can be selected by choosing the position of the gate electrode layer which determines the position of the channel. Thus, a semiconductor device including a driver circuit portion capable of high-speed operation and a pixel portion over one substrate can be manufactured.

公开(公告)号：US20240113130A1

公开(公告)日：2024-04-04

申请号：US18526407

申请日：2023-12-01

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Hiroyuki MIYAKE ,  Hideaki SHISHIDO ,  Jun KOYAMA

IPC: H01L27/12 ,  H01L29/786

CPC classification number: H01L27/1225 ,  H01L27/1255 ,  H01L29/7869

Abstract: A semiconductor device including a capacitor whose charge capacity is increased while improving the aperture ratio is provided. Further, a semiconductor device which consumes less power is provided. A transistor which includes a light-transmitting semiconductor film, a capacitor in which a dielectric film is provided between a pair of electrodes, an insulating film which is provided over the light-transmitting semiconductor film, and a first light-transmitting conductive film which is provided over the insulating film are included. The capacitor includes the first light-transmitting conductive film which serves as one electrode, the insulating film which functions as a dielectric, and a second light-transmitting conductive film which faces the first light-transmitting conductive film with the insulating film positioned therebetween and functions as the other electrode. The second light-transmitting conductive film is formed over the same surface as the light-transmitting semiconductor film of the transistor and is a metal oxide film containing a dopant.

公开(公告)号：US20230397448A1

公开(公告)日：2023-12-07

申请号：US18236000

申请日：2023-08-21

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Jun KOYAMA ,  Kiyoshi KATO

IPC: H10B99/00 ,  H01L27/12 ,  H01L29/24 ,  H01L29/16 ,  G11C11/405 ,  G11C16/04 ,  H01L27/105 ,  H01L27/118 ,  H10B41/20 ,  H10B41/70 ,  H10B69/00 ,  H01L29/786

CPC classification number: H10B99/00 ,  H01L27/1207 ,  H01L29/24 ,  H01L29/16 ,  G11C11/405 ,  G11C16/0433 ,  H01L27/105 ,  H01L27/11803 ,  H01L27/1225 ,  H10B41/20 ,  H10B41/70 ,  H10B69/00 ,  H01L29/7869 ,  H01L27/124 ,  H01L27/1255 ,  H01L29/247 ,  H01L29/78693 ,  H01L29/78696 ,  G11C2211/4016 ,  H01L21/8221

Abstract: An object is to provide a semiconductor device with a novel structure. The semiconductor device includes a first wiring; a second wiring; a third wiring; a fourth wiring; a first transistor having a first gate electrode, a first source electrode, and a first drain electrode; and a second transistor having a second gate electrode, a second source electrode, and a second drain electrode. The first transistor is provided in a substrate including a semiconductor material. The second transistor includes an oxide semiconductor layer.

公开(公告)号：US20230395726A1

公开(公告)日：2023-12-07

申请号：US18237431

申请日：2023-08-24

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Jun KOYAMA ,  Masashi TSUBUKU ,  Kosei NODA

IPC: H01L29/786 ,  H01L27/12 ,  H01L27/02

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L29/78696 ,  H01L27/0207 ,  H01L22/34

Abstract: A logic circuit includes a thin film transistor having a channel formation region formed using an oxide semiconductor, and a capacitor having terminals one of which is brought into a floating state by turning off the thin film transistor. The oxide semiconductor has a hydrogen concentration of 5×1019 (atoms/cm3) or less and thus substantially serves as an insulator in a state where an electric field is not generated. Therefore, off-state current of a thin film transistor can be reduced, leading to suppressing the leakage of electric charge stored in a capacitor, through the thin film transistor. Accordingly, a malfunction of the logic circuit can be prevented. Further, the excessive amount of current which flows in the logic circuit can be reduced through the reduction of off-state current of the thin film transistor, resulting in low power consumption of the logic circuit.

公开(公告)号：US20230352945A1

公开(公告)日：2023-11-02

申请号：US18208094

申请日：2023-06-09

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Jun KOYAMA

IPC: H02J7/00

CPC classification number: H02J7/00047 ,  H02J7/00036 ,  H02J7/0031 ,  H01M10/4257

Abstract: The versatility of a power feeding device is improved. A power storage system includes a power storage device and a power feeding device. The power storage device includes data for identifying the power storage device. The power storage device includes a power storage unit, a switch that controls whether power from the power feeding device is supplied to the power storage unit, and a control circuit having a function of controlling a conduction state of the switch in accordance with a control signal input from the power feeding device. The power feeding device includes a signal generation circuit having a function of identifying the power storage device by the data input from the power storage device, generating the control signal corresponding to the identified power storage device, and outputting the generated control signal to the power storage device.

公开(公告)号：US20230326928A1

公开(公告)日：2023-10-12

申请号：US18209559

申请日：2023-06-14

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Jun KOYAMA

IPC: H01L27/12 ,  G09G3/3266 ,  G09G3/36 ,  G11C19/28

CPC classification number: H01L27/1225 ,  G09G3/3266 ,  G09G3/3677 ,  G11C19/28 ,  G09G2300/0408 ,  G09G2300/0417 ,  G09G2310/0267 ,  G09G2330/021

Abstract: The power consumption of a shift register or a display device including the shift register is reduced. A clock signal is supplied to a shift register by a plurality of wirings, not by one wiring. Any one of the plurality of wirings supplies a clock signal in only part of the operation period of the shift register, not during the whole operation period of the shift register. Therefore, the capacity load caused with the supply of clock signals can be reduced, leading to reduction in power consumption of the shift register.

公开(公告)号：US20230307467A1

公开(公告)日：2023-09-28

申请号：US18200052

申请日：2023-05-22

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Jun KOYAMA ,  Kiyoshi KATO

IPC: H01L27/12 ,  H01L21/84 ,  H01L27/118 ,  H10B10/00 ,  H10B12/00 ,  H10B41/00 ,  H10B41/30 ,  H10B41/70 ,  H01L29/786 ,  H01L29/24

CPC classification number: H01L27/1255 ,  H01L21/84 ,  H01L27/11803 ,  H01L27/1225 ,  H10B10/00 ,  H10B10/125 ,  H10B12/00 ,  H10B12/05 ,  H10B12/30 ,  H10B41/00 ,  H10B41/30 ,  H10B41/70 ,  H01L29/7869 ,  H01L29/24 ,  G11C16/0433

Abstract: An object of the present invention is to provide a semiconductor device having a novel structure in which in a data storing time, stored data can be stored even when power is not supplied, and there is no limitation on the number of writing. A semiconductor device includes a first transistor including a first source electrode and a first drain electrode; a first channel formation region for which an oxide semiconductor material is used and to which the first source electrode and the first drain electrode are electrically connected; a first gate insulating layer over the first channel formation region; and a first gate electrode over the first gate insulating layer. One of the first source electrode and the first drain electrode of the first transistor and one electrode of a capacitor are electrically connected to each other.

公开(公告)号：US20230307464A1

公开(公告)日：2023-09-28

申请号：US18197785

申请日：2023-05-16

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Kouhei TOYOTAKA ,  Jun KOYAMA ,  Hiroyuki MIYAKE

IPC: H01L27/12 ,  G11C19/28 ,  G09G3/20 ,  G02F1/1334 ,  G02F1/1337 ,  G02F1/1343 ,  G02F1/1362 ,  G02F1/1368 ,  G09G3/3233 ,  G09G3/3258 ,  G09G3/36 ,  H01L29/786

CPC classification number: H01L27/124 ,  G11C19/287 ,  G11C19/28 ,  G09G3/20 ,  G02F1/1334 ,  G02F1/1337 ,  G02F1/134336 ,  G02F1/136286 ,  G02F1/1368 ,  G09G3/3233 ,  G09G3/3258 ,  G09G3/3648 ,  H01L27/1225 ,  H01L29/7869 ,  G09G2310/0286 ,  G09G3/3266

Abstract: A semiconductor device includes first and second transistors having the same conductivity type and a circuit. One of a source and a drain of the first transistor is electrically connected to that of the second transistor. First and third potentials are supplied to the circuit through respective wirings. A second potential and a first clock signal are supplied to the others of the sources and the drains of the first and second transistors, respectively. A second clock signal is supplied to the circuit. The third potential is higher than the second potential which is higher than the first potential. A fourth potential is equal to or higher than the third potential. The first clock signal alternates the second and fourth potentials and the second clock signal alternates the first and third potentials. The circuit controls electrical connections between gates of the first and second transistors and the wirings.

公开(公告)号：US20230253955A1

公开(公告)日：2023-08-10

申请号：US18136924

申请日：2023-04-20

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Jun KOYAMA

IPC: H03K3/012 ,  G11C8/04 ,  H03K3/037 ,  H01L21/8258 ,  H01L27/088 ,  H01L29/786 ,  H01L27/12 ,  H03K19/00 ,  G11C5/14 ,  H01L27/06 ,  H01L29/04

CPC classification number: H03K3/012 ,  G11C8/04 ,  H03K3/0372 ,  H03K3/0375 ,  H01L21/8258 ,  H01L27/088 ,  H01L29/7869 ,  H01L29/78693 ,  H01L27/1225 ,  H03K19/0008 ,  G11C5/147 ,  H01L27/0629 ,  H01L29/045 ,  H01L21/823412

Abstract: Provided is a semiconductor device including a sequential circuit including a first transistor and a capacitor. The first transistor includes a semiconductor layer including indium, zinc, and oxygen to form a channel formation region. A node electrically connected to a source or a drain of the first transistor and a capacitor becomes a floating state when the first transistor turns off, so that a potential of the node can be maintained for a long period. A power-gating control circuit may be provided to control supply of power supply potential to the sequential circuit. The potential of the node still can be maintained while supply of the power supply potential is stopped.

公开(公告)号：US20230121832A1

公开(公告)日：2023-04-20

申请号：US18082679

申请日：2022-12-16

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Jun KOYAMA

IPC: G06F1/16 ,  H01L29/786 ,  G11C5/06 ,  G06F1/26

Abstract: A portable electronic device that can operate even when electric power supplied through contactless charge by electromagnetic induction is low is provided. The portable electronic device includes a reflective liquid crystal display which includes a transistor including an oxide semiconductor, a power source portion which includes a rechargeable battery capable of charge by contactless charge, and a signal processing portion which includes a nonvolatile semiconductor memory device. In the portable electronic device, electric power stored in the rechargeable battery is used in the reflective liquid crystal display and the signal processing portion.