Abstract:
A lithographic apparatus is provided and configured to project a patterned beam of radiation onto a substrate. The apparatus has a measurement system to provide measurement data related to a thickness of a resist layer on the substrate, and a controller to control the operation of the lithographic apparatus such that a radiation intensity level in the patterned beam to be projected onto the substrate is controlled based on the measurement data.
Abstract:
Methods and systems for inspection of an object include the use of spectroscopic techniques for the detection of unwanted particles on an object's surface, based on the different responses of the unwanted particles as compared with the object to be inspected due to their different materials. Time resolved spectroscopy and/or energy resolved spectroscopy of secondary photon emission from the surface of the object can be used to obtain Raman and photoluminescence spectra. The objects to be inspected can for example be a patterning device as used in a lithographic process, for example a reticle, in which case the presence of metal, metal oxide or organic particles can be detected, for example. The methods and apparatus are highly sensitive, for example, being able to detect small particles (sub 100 nm, particularly sub 50 nm) on the patterned side of an EUV reticle.
Abstract:
A method of assessing a model of a substrate is presented. A scatterometry measurement is taken using radiation at a first wavelength. The wavelength of the radiation is then changed and a further scatterometry measurement taken. If the scatterometry measurements are consistent across a range of wavelengths then the model is sufficiently accurate. However, if the scatterometry measurements change as the wavelength changes then the model of the substrate is not sufficiently accurate.
Abstract:
A humidifying apparatus is disclosed in which gas is provided to a first side of a membrane and liquid to a second side of the same membrane. The membrane is non-porous to the liquid but porous to vapour of the liquid and is liquidphilic to said liquid.
Abstract:
A lithographic apparatus is disclosed. The apparatus includes a projection system configured to project a patterned radiation beam onto a target portion of a substrate. The projection system includes a housing and a plurality of optical elements arranged in the housing. The apparatus also includes an inlet for feeding conditioned gas to the housing and a gas exhaust for exhausting the conditioned gas from the housing for providing a gas conditioned environment in the housing. At least one gate is provided for providing communication of the gas conditioned environment with ambient atmosphere. The gate is arranged to provide a predetermined leakage of the conditioned gas to the ambient atmosphere.
Abstract:
An optical apparatus is disclosed, the apparatus comprising an optical element having a reflective surface for reflecting incident radiation in a beam path, and at least one sensor configured to sense radiation corresponding to a temperature of a respective portion of a backside surface of the optical element. Also disclosed is a method of controlling a temperature of a reflective surface of an optical element in a lithographic apparatus.
Abstract:
An optical apparatus is disclosed, the apparatus comprising an optical element having a reflective surface for reflecting incident radiation in a beam path, and at least one sensor configured to sense radiation corresponding to a temperature of a respective portion of a backside surface of the optical element. Also disclosed is a method of controlling a temperature of a reflective surface of an optical element in a lithographic apparatus.
Abstract:
A method of determining compatibility of a patterning device with a lithographic apparatus. The method includes determining an intensity distribution of a conditioned radiation beam across a sensor plane of an illumination system of the lithographic apparatus. The method further includes using the determined intensity distribution to calculate a non-uniformity of intensity caused by contamination and/or degradation of a collector. The method further includes determining the effect of the non-uniformity on a characteristic of an image of the patterned radiation beam. The method further includes determining the compatibility of the patterning device with the lithographic apparatus based on the effect of the non-uniformity on the characteristic.
Abstract:
A device manufacturing method is disclosed. A radiated spot is directed onto a target pattern formed on a substrate. The radiated spot is moved along the target pattern in a series of discrete steps, each discrete step corresponding to respective positions of the radiated spot on the target pattern. Measurement signals are generated that correspond to respective ones of the positions of the radiated spot on the target pattern. A single value is determined that is based on the measurement signals and that is representative of the property of the substrate.
Abstract:
A method for manufacturing a membrane assembly for EUV lithography, the method including: providing a stack including a membrane layer between a supporting substrate and an attachment substrate, wherein the supporting substrate includes an inner region and a border region; processing the stack, including selectively removing the inner region of the supporting substrate, to form a membrane assembly comprising: a membrane formed from at least the membrane layer; and a support holding the membrane, the support formed at least partially from the border region of the supporting substrate. The attachment substrate can be bonded to the rest of the stack.