公开(公告)号：US20240194736A1

公开(公告)日：2024-06-13

申请号：US18512271

申请日：2023-11-17

申请人： IDEAL POWER INC.

发明人： Jiankang BU ,  R. Daniel BRDAR ,  Ruiyang YU ,  Yifan JIANG

IPC分类号： H01L29/08 ,  H01L21/22 ,  H01L21/304 ,  H01L29/16 ,  H01L29/66

CPC分类号： H01L29/0804 ,  H01L21/22 ,  H01L21/304 ,  H01L29/0821 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/66265

摘要： Thin bidirectional bipolar junction transistor (BJT) devices and methods for fabricating thin bidirectional BJT devices. The method includes forming a first base region and a first emitter/collector region on a first side of a first thick semiconductor wafer. The method also includes removing a portion of the first thick semiconductor wafer to produce a first thin semiconductor wafer. The method further includes forming a second base region and a second emitter/collector region on a second side of the first thin semiconductor wafer opposite the first side. The method also includes producing a second thin semiconductor wafer. The method further includes bonding the first thin semiconductor wafer to the second thin semiconductor wafer.

公开(公告)号：US20230386987A1

公开(公告)日：2023-11-30

申请号：US18321210

申请日：2023-05-22

申请人： IDEAL POWER INC.

发明人： Jiankang BU ,  Robert Daniel BRDAR

IPC分类号： H01L23/498 ,  H01L23/373 ,  H01L23/00 ,  H01L25/065 ,  H01L25/11

CPC分类号： H01L23/49833 ,  H01L23/3735 ,  H01L24/29 ,  H01L25/0655 ,  H01L24/32 ,  H01L24/33 ,  H01L25/117 ,  H01L25/115 ,  H01L24/83 ,  H01L2224/29139 ,  H01L2224/32225 ,  H01L2224/33181 ,  H01L23/3121

摘要： A double-sided cooling package for a double-sided, bi-directional junction transistor can include a double-sided, bi-directional, junction transistor chip with an individual, double-sided, bi-directional power switch (collectively, a DSTA). The DSTA can be sandwiched between heat sinks. Each heat sink can include a direct plating copper (DPC) structure, a direct copper bonding (DCB) structure or a direct aluminum bond (DAB) structure. In addition, each heat sink can have opposed first and second copper layers on a substrate, and copper contacts that extend from a respective second copper layer through vias in each substrate to an exterior of the cooling package.

公开(公告)号：US11777018B2

公开(公告)日：2023-10-03

申请号：US17523513

申请日：2021-11-10

申请人： IDEAL POWER INC.

发明人： Richard A. Blanchard ,  Alireza Mojab

IPC分类号： H01L29/06 ,  H01L29/732

CPC分类号： H01L29/732

摘要： Layout to reduce current crowding at endpoints. At least one example is a semiconductor device comprising: an emitter region defining an inner boundary in the shape of an obround with parallel sides, and the obround having hemispherical ends each having a radius; a base region having a first end, a second end opposite the first end, and base length, the base region disposed within the obround with the base length parallel to and centered between the parallel sides, the first end spaced apart from the first hemispherical end by a first gap greater than the radius, and the second end spaced apart from the second hemispherical ends by a second gap greater than the radius.

公开(公告)号：US11637016B2

公开(公告)日：2023-04-25

申请号：US16150409

申请日：2018-10-03

申请人： Ideal Power Inc.

发明人： Richard A. Blanchard ,  William C. Alexander

IPC分类号： H01L21/225 ,  H01L21/324 ,  H01L21/768 ,  H01L21/683

摘要： Methods and systems for double-sided semiconductor device fabrication. Devices having multiple leads on each surface can be fabricated using a high-temperature-resistant handle wafer and a medium-temperature-resistant handle wafer. Dopants can be introduced on both sides shortly before a single long high-temperature diffusion step diffuses all dopants to approximately equal depths on both sides. All high-temperature processing occurs with no handle wafer or with a high-temperature handle wafer attached. Once a medium-temperature handle wafer is attached, no high-temperature processing steps occur. High temperatures can be considered to be those which can result in damage to the device in the presence of aluminum-based metallizations.

公开(公告)号：US20230066664A1

公开(公告)日：2023-03-02

申请号：US18053839

申请日：2022-11-09

申请人： IDEAL POWER INC.

发明人： Alireza MOJAB ,  Daniel BRDAR ,  Ruiyang YU

IPC分类号： H01L29/10 ,  H03K17/082 ,  H01L29/747 ,  H01L29/732

摘要： Operating a bi-directional double-base bipolar junction transistor (B-TRAN). One example is a method comprising: conducting a first load current from an upper terminal of the power module to an upper-main lead of the transistor, through the transistor, and from a lower-main lead of the transistor to a lower terminal of the power module; and then responsive assertion of a first interrupt signal, interrupting the first load current from the lower-main lead to the lower terminal by opening a lower-main FET and commutating a first shutoff current through a lower-control lead the transistor to the lower terminal; and blocking current from the upper terminal to the lower terminal by the transistor.

公开(公告)号：US20210384900A1

公开(公告)日：2021-12-09

申请号：US17340604

申请日：2021-06-07

申请人： IDEAL POWER INC.

发明人： Alireza MOJAB

IPC分类号： H03K17/66 ,  H01L27/082 ,  H02M11/00

摘要： Current sharing among bidirectional double-base bipolar junction transistors. One example is a method comprising: conducting current through a first bidirectional double-base bipolar junction transistor (first B-TRAN); conducting current through a second B-TRAN the second B-TRAN coupled in parallel with the first B-TRAN; measuring a value indicative of conduction of the first B-TRAN, and measuring a value indicative of conduction of the second B-TRAN; and adjusting a current flow through the first B-TRAN, the adjusting responsive to the value indicative of conduction of the first B-TRAN being different than the value indicative of conduction of the second B-TRAN.

公开(公告)号：US10892354B2

公开(公告)日：2021-01-12

申请号：US16773031

申请日：2020-01-27

申请人： Ideal Power, Inc.

发明人： William C. Alexander ,  Richard A. Blanchard

IPC分类号： H03K17/66 ,  H01L29/747 ,  H01L29/40 ,  H01L29/06 ,  H01L29/10 ,  H01L29/423 ,  H01L29/732 ,  H01L29/70

摘要： Dual-base two-sided bipolar power transistors which use an insulated field plate to separate the emitter/collector diffusions from the nearest base contact diffusion. This provides a surprising improvement in turn-off performance, and in breakdown voltage.

公开(公告)号：US20200243674A1

公开(公告)日：2020-07-30

申请号：US16773031

申请日：2020-01-27

申请人： Ideal Power, Inc.

发明人： William C. Alexander ,  Richard A. Blanchard

IPC分类号： H01L29/747 ,  H01L29/40 ,  H01L29/06 ,  H01L29/10 ,  H01L29/423 ,  H01L29/732 ,  H03K17/66

摘要： Dual-base two-sided bipolar power transistors which use an insulated field plate to separate the emitter/collector diffusions from the nearest base contact diffusion. This provides a surprising improvement in turn-off performance, and in breakdown voltage.

公开(公告)号：US20200006945A1

公开(公告)日：2020-01-02

申请号：US16439461

申请日：2019-06-12

申请人： Ideal Power Inc.

发明人： Nicholas A. Lemberg ,  Guy Michael Barron

IPC分类号： H02J3/38 ,  H02M3/335

摘要： An active anti-islanding architecture where a power converter injects a current component at a harmonic of the fundamental power frequency is injected with a phase sequence opposite to that which normally be present with that harmonic. (For example, a 5th harmonic frequency can be used with a positive phase sequence, or a 7th harmonic frequency with a negative phase sequence.) The injected current component can have a thousandth or less of the power transferred by the converter, since the distinctive phase sequence of the injected signal facilitates recognition of a corresponding term in the observed voltage.

公开(公告)号：US20190097031A1

公开(公告)日：2019-03-28

申请号：US15486921

申请日：2017-04-13

申请人： Ideal Power, Inc.

发明人： William C. Alexander ,  Richard A. Blanchard

IPC分类号： H01L29/747 ,  H01L29/06 ,  H01L29/40 ,  H03K17/66

CPC分类号： H01L29/747 ,  H01L29/0615 ,  H01L29/0623 ,  H01L29/0642 ,  H01L29/1004 ,  H01L29/404 ,  H01L29/407 ,  H01L29/42304 ,  H01L29/705 ,  H01L29/732 ,  H01L29/7325 ,  H03K17/66

摘要： Dual-base two-sided bipolar power transistors which use an insulated field plate to separate the emitter/collector diffusions from the nearest base contact diffusion. This provides a surprising improvement in turn-off performance, and in breakdown voltage.