公开(公告)号：US20240154029A1

公开(公告)日：2024-05-09

申请号：US18483939

申请日：2023-10-10

申请人： IDEAL POWER INC.

发明人： R. Daniel BRDAR ,  Jiankang BU ,  Ruiyang YU ,  Mudit KHANNA

IPC分类号： H01L29/735 ,  H01L29/06 ,  H01L29/08 ,  H01L29/66

CPC分类号： H01L29/735 ,  H01L29/0611 ,  H01L29/0821 ,  H01L29/6625

摘要： Operating a PNP double-sided double-base bipolar junction transistor (DSDB BJT). One example is a method of operating a DSDB-BJT, the method comprising: conducting a first load current from an upper terminal of the power module to an upper base of the transistor, through the transistor, and from a lower base to a lower terminal of the power module; and then responsive assertion of a first interrupt signal interrupting the first load current from the lower base to the lower terminal by opening a lower-main FET and commutating a first shutoff current through a lower collector-emitter of the transistor to the lower terminal; and blocking current from the upper terminal to the lower terminal by the transistor.

公开(公告)号：US11881525B2

公开(公告)日：2024-01-23

申请号：US17884803

申请日：2022-08-10

申请人： IDEAL POWER INC.

发明人： Jiankang Bu ,  Constantin Bulucea ,  Alireza Mojab ,  Jeffrey Knapp ,  Robert Daniel Brdar

IPC分类号： H01L29/747 ,  H01L29/66 ,  H01L29/10 ,  H01L29/08

CPC分类号： H01L29/747 ,  H01L29/083 ,  H01L29/1012 ,  H01L29/66386

摘要： Bi-directional trench power switches. At least one example is a semiconductor device comprising: an upper base region associated with a first side of a substrate of semiconductor material; an upper-CE trench defined on the first side, the upper-CE trench defines a proximal opening at the first side and a distal end within the substrate; an upper collector-emitter region disposed at the distal end of the upper-CE trench; a lower base region associated with a second side of substrate; and a lower collector-emitter region associated with the second side.

公开(公告)号：US20230299188A1

公开(公告)日：2023-09-21

申请号：US18323202

申请日：2023-05-24

申请人： IDEAL POWER INC.

发明人： Richard A. BLANCHARD ,  William C. ALEXANDER

IPC分类号： H01L29/747 ,  H01L29/74 ,  H01L29/06 ,  H01L29/40 ,  H01L29/66 ,  H01L29/73

CPC分类号： H01L29/747 ,  H01L29/7424 ,  H01L29/0623 ,  H01L29/0696 ,  H01L29/404 ,  H01L29/408 ,  H01L29/66386 ,  H01L29/407 ,  H01L29/73 ,  H01L29/16

摘要： The present application teaches, among other innovations, power semiconductor devices in which breakdown initiation regions, on BOTH sides of a die, are located inside the emitter/collector regions, but laterally spaced away from insulated trenches which surround the emitter/collector regions. Preferably this is part of a symmetrically-bidirectional power device of the “B-TRAN” type. In one advantageous group of embodiments (but not all), the breakdown initiation regions are defined by dopant introduction through the bottom of trench portions which lie within the emitter/collector region. In one group of embodiments (but not all), these can advantageously be separated trench portions which are not continuous with the trench(es) surrounding the emitter/collector region(s).

公开(公告)号：US11699746B2

公开(公告)日：2023-07-11

申请号：US17350254

申请日：2021-06-17

申请人： IDEAL POWER INC.

发明人： Richard A. Blanchard ,  William C. Alexander

IPC分类号： H01L29/747 ,  H01L29/74 ,  H01L29/06 ,  H01L29/40 ,  H01L29/66 ,  H01L29/73 ,  H01L29/16

CPC分类号： H01L29/747 ,  H01L29/0623 ,  H01L29/0696 ,  H01L29/404 ,  H01L29/407 ,  H01L29/408 ,  H01L29/66386 ,  H01L29/73 ,  H01L29/7424 ,  H01L29/16

摘要： The present application teaches, among other innovations, power semiconductor devices in which breakdown initiation regions, on BOTH sides of a die, are located inside the emitter/collector regions, but laterally spaced away from insulated trenches which surround the emitter/collector regions. Preferably this is part of a symmetrically-bidirectional power device of the “B-TRAN” type. In one advantageous group of embodiments (but not all), the breakdown initiation regions are defined by dopant introduction through the bottom of trench portions which lie within the emitter/collector region. In one group of embodiments (but not all), these can advantageously be separated trench portions which are not continuous with the trench(es) surrounding the emitter/collector region(s).

公开(公告)号：US10580885B1

公开(公告)日：2020-03-03

申请号：US16557284

申请日：2019-08-30

申请人： Ideal Power, Inc.

发明人： William C. Alexander ,  Richard A. Blanchard

IPC分类号： H03K17/66 ,  H01L29/747 ,  H01L29/40 ,  H01L29/06 ,  H01L29/732 ,  H01L29/423 ,  H01L29/10 ,  H01L29/70

摘要： Dual-base two-sided bipolar power transistors which use an insulated field plate to separate the emitter/collector diffusions from the nearest base contact diffusion. This provides a surprising improvement in turn-off performance, and in breakdown voltage.

公开(公告)号：US20190267810A1

公开(公告)日：2019-08-29

申请号：US16288016

申请日：2019-02-27

申请人： Ideal Power, Inc.

发明人： David M. Johns

IPC分类号： H02J3/36 ,  H02B7/06 ,  H02M3/155 ,  H02M1/08 ,  H02B1/24

摘要： Methods and systems for HVDC and/or MVDC power transmission and/or distribution, using circuit breakers where a series-connected stack of fully-bidirectional bipolar junction transistors is the initial interrupter in the current path. Preferably these transistors are operated with two pre-turnoff phases, to deplete minority carrier population and thus provide a faster transition to complete turnoff.

公开(公告)号：US20180130898A1

公开(公告)日：2018-05-10

申请号：US15604822

申请日：2017-05-25

申请人： Ideal Power, Inc.

发明人： Richard A. Blanchard ,  William C. Alexander

IPC分类号： H01L29/747 ,  H01L29/74 ,  H01L29/06 ,  H01L29/40 ,  H01L29/66

CPC分类号： H01L29/747 ,  H01L29/0623 ,  H01L29/0649 ,  H01L29/0696 ,  H01L29/1004 ,  H01L29/16 ,  H01L29/404 ,  H01L29/407 ,  H01L29/408 ,  H01L29/66234 ,  H01L29/66295 ,  H01L29/66386 ,  H01L29/705 ,  H01L29/73 ,  H01L29/732 ,  H01L29/7424

摘要： The present application teaches, among other innovations, power semiconductor devices in which breakdown initiation regions, on BOTH sides of a die, are located inside the emitter/collector regions, but laterally spaced away from insulated trenches which surround the emitter/collector regions. Preferably this is part of a symmetrically-bidirectional power device of the “B-TRAN” type. In one advantageous group of embodiments (but not all), the breakdown initiation regions are defined by dopant introduction through the bottom of trench portions which lie within the emitter/collector region. In one group of embodiments (but not all), these can advantageously be separated trench portions which are not continuous with the trench(es) surrounding the emitter/collector region(s).

公开(公告)号：US09742385B2

公开(公告)日：2017-08-22

申请号：US15213389

申请日：2016-07-18

申请人： Ideal Power Inc.

发明人： William C. Alexander

IPC分类号： H01L29/732 ,  H03K5/08 ,  H01L29/872 ,  H01L29/747 ,  H03K17/74 ,  H01L29/417 ,  H01L29/423 ,  H01L29/73 ,  H01L29/737 ,  H01L29/739 ,  H01L29/74 ,  H01L29/06 ,  H01L29/08 ,  H01L29/10 ,  H01L29/16 ,  H03K17/68

CPC分类号： H03K5/08 ,  H01L29/0619 ,  H01L29/0804 ,  H01L29/0817 ,  H01L29/0821 ,  H01L29/1004 ,  H01L29/16 ,  H01L29/1604 ,  H01L29/41708 ,  H01L29/42304 ,  H01L29/73 ,  H01L29/732 ,  H01L29/7375 ,  H01L29/7393 ,  H01L29/7395 ,  H01L29/7416 ,  H01L29/747 ,  H01L29/872 ,  H03K17/68 ,  H03K17/74 ,  H03K2217/0009

摘要： A symmetrically-bidirectional bipolar transistor circuit where the two base contact regions are clamped, through a low-voltage diode and a resistive element, to avoid bringing either emitter junction to forward bias. This avoids bipolar gain in the off state, and thereby avoids reduction of the withstand voltage due to bipolar gain.

公开(公告)号：US09679999B2

公开(公告)日：2017-06-13

申请号：US15090582

申请日：2016-04-04

申请人： Ideal Power Inc.

发明人： Richard A. Blanchard

IPC分类号： H01L27/082 ,  H01L29/66 ,  H01L29/747 ,  H01L29/40 ,  H01L29/06 ,  H01L29/16

CPC分类号： H01L29/747 ,  H01L27/082 ,  H01L27/0823 ,  H01L29/0619 ,  H01L29/0692 ,  H01L29/0813 ,  H01L29/0821 ,  H01L29/1004 ,  H01L29/16 ,  H01L29/407 ,  H01L29/66234 ,  H01L29/66295 ,  H01L29/66303 ,  H01L29/73 ,  H01L29/732

摘要： A two-surface bidirectional power bipolar transistor is constructed with a two-surface cellular layout. Each emitter/collector region (e.g. doped n-type) is a local center of the repeated pattern, and is surrounded by a trench with an insulated field plate, which is tied to the potential of the emitter/collector region. The outer (other) side of this field plate trench is preferably surrounded by a base connection region (e.g. p-type), which provides an ohmic connection to the substrate. The substrate itself serves as the transistor's base.

公开(公告)号：US09520764B1

公开(公告)日：2016-12-13

申请号：US14182277

申请日：2014-02-17

申请人： Ideal Power, Inc.

发明人： Paul Bundschuh ,  William C. Alexander ,  Guy Michael Barron ,  Christopher Cobb ,  Paul Roush

IPC分类号： H02M3/335 ,  H02M1/08 ,  H02M5/458

CPC分类号： H02M5/225 ,  H02M1/08 ,  H02M3/1582 ,  H02M3/33507 ,  H02M3/33584 ,  H02M5/293 ,  H02M5/297 ,  H02M5/458 ,  H02M7/4807 ,  H02M7/797 ,  H02M2007/4815 ,  Y02B70/1441

摘要： Methods and systems for bi-directional multi-port power conversion systems and applications are disclosed. In some sample embodiments, current-modulating power converters can be used to provide conversion between synchronous and asynchronous power. In some sample embodiments, current-modulating power converters can perform power conversion can be performed to and from three-phase AC with an active neutral line. In some sample embodiments, current-modulating power converters can convert between synchronous and asynchronous power and also support three-phase AC with active neutral.

摘要翻译： 公开了用于双向多端口功率转换系统和应用的方法和系统。 在一些示例性实施例中，电流调制功率转换器可用于提供同步和异步功率之间的转换。 在一些示例性实施例中，电流调制功率转换器可以执行功率转换，其可以与具有活动中性线的三相AC执行。 在一些示例实施例中，电流调制功率转换器可以在同步和异步电源之间转换，并且还支持具有有效中性点的三相AC。